2026 Vincent Derycke: Engineering and Technology Researcher – H-Index, Publications & Awards

D-Index & Metrics

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Engineering and Technology	40	7151	6906	150	146	154	12692

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Engineering and Technology

7151

6906

150

146

154

12692

Engineering and Technology

D-Index

Citations

12692

World Ranking

7151

National Ranking

150

Overview

Vincent Derycke is affiliated with the University of Paris-Saclay in France. Their research spans several interconnected fields within engineering, materials science, and physics and astronomy.

The main fields of study include:

Engineering
Materials Science
Physics and Astronomy

More specific subfields of their research involve:

Materials Chemistry
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Biomedical Engineering
Electrochemistry

Derycke's work focuses on topics such as:

2D Materials and Applications
Surface and Thin Film Phenomena
Nanowire Synthesis and Applications
Force Microscopy Techniques and Applications
Molecular Junctions and Nanostructures
Graphene Research and Applications
Advancements in Semiconductor Devices and Circuit Design

Frequent co-authors in their publications are:

Nathan Ullberg
Bruno Jousselme
Renaud Cornut
Stéphane Campidelli
Aloïs Arrighi

Publication venues where Vincent Derycke has contributed multiple works include:

Nanotechnology
ECS Meeting Abstracts
Physical Review B
Electrochemistry Communications
ACS Nano

Some recent papers authored or co-authored by Derycke are:

The Schottky barrier transistor in emerging electronic devices (2023, Nanotechnology)
Electronic properties of rhombohedrally stacked bilayer WSe₂ obtained by chemical vapor deposition (2023, Physical Review B)
Low loading ORR selectivity evaluation of Pt-free catalysts with scanning electrochemical microscopy (2023, Electrochemistry Communications)
A simple KPFM-based approach for electrostatic-free topographic measurements: the case of MoS₂ on SiO₂ (2023, Nanotechnology)
(Invited) Backside Absorbing Layer Microscopy: A New Tool to Study the Optical, Chemical and Electrochemical Properties of 2D Materials (2020, ECS Meeting Abstracts)

Best Publications

Carbon nanotubes as schottky barrier transistors.

S. Heinze;J. Tersoff;R. Martel;V. Derycke

1719
Citations
Carbon Nanotube Inter- and Intramolecular Logic Gates

V. Derycke;R. Martel;J. Appenzeller;Ph. Avouris

1660
Citations
Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.

R. Martel;V. Derycke;C. Lavoie;J. Appenzeller

1068
Citations
Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

S. J. Wind;J. Appenzeller;R. Martel;V. Derycke

1058
Citations
Controlling doping and carrier injection in carbon nanotube transistors

V. Derycke;R. Martel;J. Appenzeller;Ph. Avouris

952
Citations
Field-modulated carrier transport in carbon nanotube transistors.

J. Appenzeller;J. Knoch;V. Derycke;R. Martel

654
Citations
Methodology for electrically induced selective breakdown of nanotubes

Phaedon Avouris;Philip G. Collins;Vincent Stephane Derycke;Richard Martel

412
Citations
Carbon Nanotube-Templated Synthesis of Covalent Porphyrin Network for Oxygen Reduction Reaction

Ismail Hijazi;Tiphaine Bourgeteau;Renaud Cornut;Adina Morozan

281
Citations
Room-temperature ferromagnetic nanotubes controlled by electron or hole doping

L. Krusin-Elbaum;D. M. Newns;H. Zeng;V. Derycke;V. Derycke

264
Citations
Carbon nanotube field-effect transistors and logic circuits

R. Martel;V. Derycke;J. Appenzeller;S. Wind

227
Citations
80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

L. Nougaret;H. Happy;G. Dambrine;V. Derycke

225
Citations
Carbon nanotube electronics

J. Appenzeller;J. Knoch;R. Martel;V. Derycke

220
Citations
Optoelectronic Switch and Memory Devices Based on Polymer‐Functionalized Carbon Nanotube Transistors

Julien Borghetti;Vincent Derycke;Stéphane Lenfant;Pascale Chenevier

196
Citations
Catalyst-Free Growth of Ordered Single-Walled Carbon Nanotube Networks

V. Derycke;R. Martel;M. Radosavljević;and F. M. Ross

187
Citations
Flexible gigahertz transistors derived from solution-based single-layer graphene

Cédric Sire;Florence Ardiaca;Sylvie Lepilliet;Jung Woo T. Seo

181
Citations
Carbon nanotube electronics

P. Avouris;J. Appenzeller;V. Derycke;R. Martel

170
Citations
Chemical Optimization of Self-Assembled Carbon Nanotube Transistors

Stéphane Auvray;Vincent Derycke;Marcelo Goffman;Arianna Filoramo

165
Citations
Intrinsic current gain cutoff frequency of 30 GHz with carbon nanotube transistors

A. Le Louarn;F. Kapche;J.M. Bethoux;H. Happy

163
Citations
Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors

S. J. Wind;J. Appenzeller;R. Martel;V. Derycke

160
Citations
Carbon nanotube transistors and logic circuits

Ph. Avouris;R. Martel;V. Derycke;J. Appenzeller

159
Citations