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Materials Science

D-Index
50
Citations
11241
World Ranking
10122
National Ranking
290

Overview

Dominique Vuillaume is affiliated with the Centre national de la recherche scientifique (CNRS) in France. Their research primarily focuses on materials science and engineering, with specific subfields including materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, polymers and plastics, and molecular biology.

The scientist's work covers several main topics, including molecular junctions and nanostructures, graphene research and applications, conducting polymers and applications, polyoxometalates: synthesis and applications, carbon nanotubes in composites, quantum and electron transport phenomena, and organic electronics and photovoltaics.

Dominique Vuillaume has published extensively, with notable recent papers such as:

  • "Covalent Grafting of Polyoxometalate Hybrids onto Flat Silicon/Silicon Oxide: Insights from POMs Layers on Oxides" (2020), ACS Applied Materials & Interfaces
  • "Conductance switching of azobenzene-based self-assembled monolayers on cobalt probed by UHV conductive-AFM" (2021), Nanoscale
  • "Redox-controlled conductance of polyoxometalate molecular junctions" (2022), Nanoscale
  • "Conductance switching at the nanoscale of diarylethene derivative self-assembled monolayers on La0.7Sr0.3MnO3" (2020), Nanoscale
  • "Experimental observation of the role of countercations in modulating the electrical conductance of Preyssler-type polyoxometalate nanodevices" (2023), Nanoscale

Key coauthors who frequently collaborate with Dominique Vuillaume include S. Lenfant, Michel Calame, David Guérin, Jacopo Oswald, and Davide Beretta.

The researcher has contributed many publications in prominent venues, most notably:

  • Nanoscale (11 publications)
  • arXiv (Cornell University) (9 publications)
  • Zenodo (CERN European Organization for Nuclear Research) (8 publications)
  • Journal of Applied Physics (3 publications)
  • ACS Applied Materials & Interfaces (2 publications)

Best Publications

  • UNIMOLECULAR ELECTRICAL RECTIFICATION IN HEXADECYLQUINOLINIUM TRICYANOQUINODIMETHANIDE

    Robert M. Metzger;Bo Chen;Ulf Höpfner;M. V. Lakshmikantham

  • Self assembled monolayers on silicon for molecular electronics.

    D.K. Aswal;S. Lenfant;D. Guerin;J.V. Yakhmi

  • An Organic Nanoparticle Transistor Behaving as a Biological Spiking Synapse

    Fabien Alibart;Stéphane Pleutin;David Guérin;Christophe Novembre

  • Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films

    J. Collet;O. Tharaud;A. Chapoton;D. Vuillaume

  • Suppression of charge carrier tunneling through organic self-assembled monolayers.

    C. Boulas;J. V. Davidovits;F. Rondelez;D. Vuillaume

  • An organic nanoparticle transistor behaving as a biological synapse

    F. Alibart;S. Pleutin;D. Guerin;C. Novembre

  • Metal∕organic∕metal bistable memory devices

    D. Tondelier;K. Lmimouni;D. Vuillaume;C. Fery

  • A memristive nanoparticle/organic hybrid synapstor for neuro-inspired computing

    F. Alibart;S. Pleutin;O. Bichler;C. Gamrat

  • Theory of electrical rectification in a molecular monolayer

    Christophe Krzeminski;Christophe Delerue;Guy Allan;Dominique Vuillaume

  • Filamentary switching: synaptic plasticity through device volatility.

    Selina La Barbera;Dominique Vuillaume;Fabien Alibart

  • Metal/organic/metal bistable memory devices

    Dominique Vuillaume;Kamal Lmimouni;Denis Tondelier;Christophe Fery

  • A Memristive Nanoparticle/Organic Hybrid Synapstor for Neuroinspired Computing

    Fabien Alibart;Stéphane Pleutin;Olivier Bichler;Christian Gamrat

  • Molecular rectifying diodes from self-assembly on silicon

    Stéphane Lenfant;Christophe Krzeminski;Christophe Delerue;Guy Allan

  • Optoelectronic Switch and Memory Devices Based on Polymer‐Functionalized Carbon Nanotube Transistors

    Julien Borghetti;Vincent Derycke;Stéphane Lenfant;Pascale Chenevier

  • Nano-field effect transistor with an organic self-assembled monolayer as gate insulator

    J. Collet;D. Vuillaume

  • Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current–voltage characteristics

    A.K. Chauhan;D.K. Aswal;S.P. Koiry;S.K. Gupta

  • High On−Off Conductance Switching Ratio in Optically-Driven Self-Assembled Conjugated Molecular Systems

    Kacem Smaali;Stéphane Lenfant;Sandrine Karpe;Maïténa Oçafrain

  • Organic insulating films of nanometer thicknesses

    D. Vuillaume;C. Boulas;J. Collet;J. V. Davidovits

  • Octadecyltrichlorosilane monolayers as ultrathin gate insulating films in metal‐insulator‐semiconductor devices

    P. Fontaine;D. Goguenheim;D. Deresmes;D. Vuillaume

  • 1-octadecene monolayers on Si(111) hydrogen-terminated surfaces: Effect of substrate doping

    Corinne Miramond;Dominique Vuillaume

Frequent Co-Authors

Vincent Derycke
Vincent Derycke University of Paris-Saclay
Akira Fujiwara
Akira Fujiwara NTT (Japan)
Jean Roncali
Jean Roncali University of Angers
J. V. Yakhmi
J. V. Yakhmi Bhabha Atomic Research Center
Serge Palacin
Serge Palacin DSM (Netherlands)
Fabio Biscarini
Fabio Biscarini University of Modena and Reggio Emilia
Christophe Delerue
Christophe Delerue University of Lille
Robert M. Metzger
Robert M. Metzger University of Alabama
Antoine Kahn
Antoine Kahn Princeton University
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS

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