World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
50
Citations
11241
World Ranking
10120
National Ranking
290

Dominique Vuillaume publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Dominique Vuillaume sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 351 publications — 70th percentile

70% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Dominique Vuillaume D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Dominique Vuillaume sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 50 D-Index — 22nd percentile

22% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Dominique Vuillaume is affiliated with the Centre national de la recherche scientifique (CNRS) in France. Their research primarily focuses on materials science and engineering, with specific subfields including materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, polymers and plastics, and molecular biology.

The scientist's work covers several main topics, including molecular junctions and nanostructures, graphene research and applications, conducting polymers and applications, polyoxometalates: synthesis and applications, carbon nanotubes in composites, quantum and electron transport phenomena, and organic electronics and photovoltaics.

Dominique Vuillaume has published extensively, with notable recent papers such as:

  • "Covalent Grafting of Polyoxometalate Hybrids onto Flat Silicon/Silicon Oxide: Insights from POMs Layers on Oxides" (2020), ACS Applied Materials & Interfaces
  • "Conductance switching of azobenzene-based self-assembled monolayers on cobalt probed by UHV conductive-AFM" (2021), Nanoscale
  • "Redox-controlled conductance of polyoxometalate molecular junctions" (2022), Nanoscale
  • "Conductance switching at the nanoscale of diarylethene derivative self-assembled monolayers on La0.7Sr0.3MnO3" (2020), Nanoscale
  • "Experimental observation of the role of countercations in modulating the electrical conductance of Preyssler-type polyoxometalate nanodevices" (2023), Nanoscale

Key coauthors who frequently collaborate with Dominique Vuillaume include S. Lenfant, Michel Calame, David Guérin, Jacopo Oswald, and Davide Beretta.

The researcher has contributed many publications in prominent venues, most notably:

  • Nanoscale (11 publications)
  • arXiv (Cornell University) (9 publications)
  • Zenodo (CERN European Organization for Nuclear Research) (8 publications)
  • Journal of Applied Physics (3 publications)
  • ACS Applied Materials & Interfaces (2 publications)

Best Publications

  • UNIMOLECULAR ELECTRICAL RECTIFICATION IN HEXADECYLQUINOLINIUM TRICYANOQUINODIMETHANIDE

    Robert M. Metzger;Bo Chen;Ulf Höpfner;M. V. Lakshmikantham

  • Self assembled monolayers on silicon for molecular electronics.

    D.K. Aswal;S. Lenfant;D. Guerin;J.V. Yakhmi

  • An Organic Nanoparticle Transistor Behaving as a Biological Spiking Synapse

    Fabien Alibart;Stéphane Pleutin;David Guérin;Christophe Novembre

  • Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films

    J. Collet;O. Tharaud;A. Chapoton;D. Vuillaume

  • Suppression of charge carrier tunneling through organic self-assembled monolayers.

    C. Boulas;J. V. Davidovits;F. Rondelez;D. Vuillaume

  • An organic nanoparticle transistor behaving as a biological synapse

    F. Alibart;S. Pleutin;D. Guerin;C. Novembre

  • Metal∕organic∕metal bistable memory devices

    D. Tondelier;K. Lmimouni;D. Vuillaume;C. Fery

  • A memristive nanoparticle/organic hybrid synapstor for neuro-inspired computing

    F. Alibart;S. Pleutin;O. Bichler;C. Gamrat

  • Theory of electrical rectification in a molecular monolayer

    Christophe Krzeminski;Christophe Delerue;Guy Allan;Dominique Vuillaume

  • Filamentary switching: synaptic plasticity through device volatility.

    Selina La Barbera;Dominique Vuillaume;Fabien Alibart

  • Metal/organic/metal bistable memory devices

    Dominique Vuillaume;Kamal Lmimouni;Denis Tondelier;Christophe Fery

  • A Memristive Nanoparticle/Organic Hybrid Synapstor for Neuroinspired Computing

    Fabien Alibart;Stéphane Pleutin;Olivier Bichler;Christian Gamrat

  • Molecular rectifying diodes from self-assembly on silicon

    Stéphane Lenfant;Christophe Krzeminski;Christophe Delerue;Guy Allan

  • Optoelectronic Switch and Memory Devices Based on Polymer‐Functionalized Carbon Nanotube Transistors

    Julien Borghetti;Vincent Derycke;Stéphane Lenfant;Pascale Chenevier

  • Nano-field effect transistor with an organic self-assembled monolayer as gate insulator

    J. Collet;D. Vuillaume

  • Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current–voltage characteristics

    A.K. Chauhan;D.K. Aswal;S.P. Koiry;S.K. Gupta

  • High On−Off Conductance Switching Ratio in Optically-Driven Self-Assembled Conjugated Molecular Systems

    Kacem Smaali;Stéphane Lenfant;Sandrine Karpe;Maïténa Oçafrain

  • Organic insulating films of nanometer thicknesses

    D. Vuillaume;C. Boulas;J. Collet;J. V. Davidovits

  • Octadecyltrichlorosilane monolayers as ultrathin gate insulating films in metal‐insulator‐semiconductor devices

    P. Fontaine;D. Goguenheim;D. Deresmes;D. Vuillaume

  • 1-octadecene monolayers on Si(111) hydrogen-terminated surfaces: Effect of substrate doping

    Corinne Miramond;Dominique Vuillaume

Frequent Co-Authors

Vincent Derycke
Vincent Derycke University of Paris-Saclay
Akira Fujiwara
Akira Fujiwara NTT (Japan)
Jean Roncali
Jean Roncali University of Angers
J. V. Yakhmi
J. V. Yakhmi Bhabha Atomic Research Center
Serge Palacin
Serge Palacin DSM (Netherlands)
Fabio Biscarini
Fabio Biscarini University of Modena and Reggio Emilia
Christophe Delerue
Christophe Delerue University of Lille
Robert M. Metzger
Robert M. Metzger University of Alabama
Antoine Kahn
Antoine Kahn Princeton University
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS

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