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Akira Fujiwara

Akira Fujiwara

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
42
Citations
6134
World Ranking
4157
National Ranking
161

Overview

Akira Fujiwara is affiliated with NTT in Japan and has an extensive publication record primarily focused on engineering and physics. Their research intersects several fields including Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Biomedical Engineering, Molecular Biology, and Materials Chemistry.

The scientist's work covers a range of topics with a concentration on quantum and electron transport phenomena, semiconductor materials and devices, and advancements in semiconductor devices and circuit design. Additional themes include advanced biosensing and bioanalysis techniques, mechanical and optical resonators, electrochemical analysis and applications, and electronic and structural properties of oxides.

Akira Fujiwara has frequently published in the following venues:

  • arXiv (Cornell University)
  • Applied Physics Letters
  • Metrologia
  • Nano Letters
  • ECS Transactions

Several recent papers authored or co-authored by Fujiwara demonstrate a focus on electron pumping, quantum standards, and biosensor applications. Notable publications include:

  • "Realisation of a quantum current standard at liquid helium temperature with sub-ppm reproducibility" (2020, Metrologia)
  • "Precision measurement of an electron pump at 2 GHz; the frontier of small DC current metrology" (2023, Metrologia)
  • "Redox-labelled electrochemical aptasensors with nanosupported cancer cells" (2022, Biosensors and Bioelectronics)
  • "Understanding the mechanism of tunable-barrier single-electron pumping: Mechanism crossover and optimal accuracy" (2021, Physical review. B./Physical review. B)
  • "Universality and Multiplication of Gigahertz-Operated Silicon Pumps with Parts Per Million-Level Uncertainty" (2023, Nano Letters)

Collaborative work is a key aspect of Fujiwara's research activity. Frequent co-authors include:

  • Gento Yamahata
  • Katsuhiko Nishiguchi
  • Nicolas Clément
  • Kensaku Chida
  • Shuo Li

Their scholarly contributions span topics that combine advanced experimental techniques and theoretical analysis to explore electron transport mechanisms at the quantum level, as well as the development of biosensing technologies involving electrochemical and nano-scale approaches.

Best Publications

  • Silicon single-electron devices

    Yasuo Takahashi;Yukinori Ono;Akira Fujiwara;Hiroshi Inokawa

  • Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

    Akira Fujiwara;Katsuhiko Nishiguchi;Yukinori Ono

  • Interconnect-free parallel logic circuits in a single mechanical resonator

    I. Mahboob;E. Flurin;K. Nishiguchi;A. Fujiwara

  • Phonon lasing in an electromechanical resonator.

    I. Mahboob;K. Nishiguchi;A. Fujiwara;H. Yamaguchi

  • Pauli-spin-blockade transport through a silicon double quantum dot

    Hongwu Liu;Hongwu Liu;T. Fujisawa;Y. Ono;H. Inokawa

  • Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

    Akira Fujiwara;Hiroshi Inokawa;Kenji Yamazaki;Hideo Namatsu

  • A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors

    H. Inokawa;A. Fujiwara;Y. Takahashi

  • Manipulation and detection of single electrons for future information processing

    Yukinori Ono;Akira Fujiwara;Katsuhiko Nishiguchi;Hiroshi Inokawa

  • TOPICAL REVIEW: Silicon single-electron devices

    Yasuo Takahashi;Yukinori Ono;Akira Fujiwara;Hiroshi Inokawa

  • Current quantization due to single-electron transfer in Si-wire charge-coupled devices

    Akira Fujiwara;Neil M. Zimmerman;Yukinori Ono;Yasuo Takahashi

  • Multigate single-electron transistors and their application to an exclusive-OR gate

    Yasuo Takahashi;Akira Fujiwara;Kenji Yamazaki;Hideo Namatsu

  • Conductance modulation by individual acceptors in Si nanoscale field-effect transistors

    Y. Ono;K. Nishiguchi;A. Fujiwara;H. Yamaguchi

  • Power generator driven by Maxwell's demon.

    Kensaku Chida;Samarth Desai;Katsuhiko Nishiguchi;Akira Fujiwara

  • Manipulation of elementary charge in a silicon charge-coupled device.

    Akira Fujiwara;Yasuo Takahashi

  • High inversion current in silicon nanowire field effect transistors

    Sang-Mo Koo;Akira Fujiwara;Jin-Ping Han;Eric M. Vogel

  • Excellent charge offset stability in a Si-based single-electron tunneling transistor

    Neil M. Zimmerman;William H. Huber;Akira Fujiwara;Yasuo Takahashi

  • A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity

    N. Clément;K. Nishiguchi;J. F. Dufreche;D. Guerin

  • One-by-one trap activation in silicon nanowire transistors

    N. Clément;K. Nishiguchi;A. Fujiwara;D. Vuillaume

  • Gigahertz single-trap electron pumps in silicon

    Gento Yamahata;Katsuhiko Nishiguchi;Akira Fujiwara

  • Spectral blue shift of photoluminescence in strained‐layer Si1−xGex/Si quantum well structures grown by gas‐source Si molecular beam epitaxy

    S. Fukatsu;H. Yoshida;A. Fujiwara;Y. Takahashi

  • Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology

    Katsuhiko Nishiguchi;Akira Fujiwara;Yukinori Ono;Hiroshi Inokawa

  • High Inversion Current in Silicon Nanowire Field Effect Transistors | NIST

    Sang-Mo Koo;Jin-Ping Han;Eric M. Vogel;Curt A. Richter

Frequent Co-Authors

Yasuo Takahashi
Yasuo Takahashi Hokkaido University
Dominique Vuillaume
Dominique Vuillaume Centre national de la recherche scientifique, CNRS
Kohei M. Itoh
Kohei M. Itoh Keio University
Kenji Shiraishi
Kenji Shiraishi Nagoya University
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Takao Someya
Takao Someya University of Tokyo
Curt A. Richter
Curt A. Richter National Institute of Standards and Technology
Tomoyuki Yokota
Tomoyuki Yokota University of Tokyo
Herre S. J. van der Zant
Herre S. J. van der Zant Delft University of Technology

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