World's Best Scientists 2026 revealed!
Akira Fujiwara

Akira Fujiwara

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
42
Citations
6134
World Ranking
4157
National Ranking
161

Akira Fujiwara publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Akira Fujiwara sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 291 publications — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Akira Fujiwara D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Akira Fujiwara sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 42 D-Index — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Akira Fujiwara is affiliated with NTT in Japan and has an extensive publication record primarily focused on engineering and physics. Their research intersects several fields including Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Biomedical Engineering, Molecular Biology, and Materials Chemistry.

The scientist's work covers a range of topics with a concentration on quantum and electron transport phenomena, semiconductor materials and devices, and advancements in semiconductor devices and circuit design. Additional themes include advanced biosensing and bioanalysis techniques, mechanical and optical resonators, electrochemical analysis and applications, and electronic and structural properties of oxides.

Akira Fujiwara has frequently published in the following venues:

  • arXiv (Cornell University)
  • Applied Physics Letters
  • Metrologia
  • Nano Letters
  • ECS Transactions

Several recent papers authored or co-authored by Fujiwara demonstrate a focus on electron pumping, quantum standards, and biosensor applications. Notable publications include:

  • "Realisation of a quantum current standard at liquid helium temperature with sub-ppm reproducibility" (2020, Metrologia)
  • "Precision measurement of an electron pump at 2 GHz; the frontier of small DC current metrology" (2023, Metrologia)
  • "Redox-labelled electrochemical aptasensors with nanosupported cancer cells" (2022, Biosensors and Bioelectronics)
  • "Understanding the mechanism of tunable-barrier single-electron pumping: Mechanism crossover and optimal accuracy" (2021, Physical review. B./Physical review. B)
  • "Universality and Multiplication of Gigahertz-Operated Silicon Pumps with Parts Per Million-Level Uncertainty" (2023, Nano Letters)

Collaborative work is a key aspect of Fujiwara's research activity. Frequent co-authors include:

  • Gento Yamahata
  • Katsuhiko Nishiguchi
  • Nicolas Clément
  • Kensaku Chida
  • Shuo Li

Their scholarly contributions span topics that combine advanced experimental techniques and theoretical analysis to explore electron transport mechanisms at the quantum level, as well as the development of biosensing technologies involving electrochemical and nano-scale approaches.

Best Publications

  • Silicon single-electron devices

    Yasuo Takahashi;Yukinori Ono;Akira Fujiwara;Hiroshi Inokawa

  • Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

    Akira Fujiwara;Katsuhiko Nishiguchi;Yukinori Ono

  • Interconnect-free parallel logic circuits in a single mechanical resonator

    I. Mahboob;E. Flurin;K. Nishiguchi;A. Fujiwara

  • Phonon lasing in an electromechanical resonator.

    I. Mahboob;K. Nishiguchi;A. Fujiwara;H. Yamaguchi

  • Pauli-spin-blockade transport through a silicon double quantum dot

    Hongwu Liu;Hongwu Liu;T. Fujisawa;Y. Ono;H. Inokawa

  • Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

    Akira Fujiwara;Hiroshi Inokawa;Kenji Yamazaki;Hideo Namatsu

  • A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors

    H. Inokawa;A. Fujiwara;Y. Takahashi

  • Manipulation and detection of single electrons for future information processing

    Yukinori Ono;Akira Fujiwara;Katsuhiko Nishiguchi;Hiroshi Inokawa

  • TOPICAL REVIEW: Silicon single-electron devices

    Yasuo Takahashi;Yukinori Ono;Akira Fujiwara;Hiroshi Inokawa

  • Current quantization due to single-electron transfer in Si-wire charge-coupled devices

    Akira Fujiwara;Neil M. Zimmerman;Yukinori Ono;Yasuo Takahashi

  • Multigate single-electron transistors and their application to an exclusive-OR gate

    Yasuo Takahashi;Akira Fujiwara;Kenji Yamazaki;Hideo Namatsu

  • Conductance modulation by individual acceptors in Si nanoscale field-effect transistors

    Y. Ono;K. Nishiguchi;A. Fujiwara;H. Yamaguchi

  • Power generator driven by Maxwell's demon.

    Kensaku Chida;Samarth Desai;Katsuhiko Nishiguchi;Akira Fujiwara

  • Manipulation of elementary charge in a silicon charge-coupled device.

    Akira Fujiwara;Yasuo Takahashi

  • High inversion current in silicon nanowire field effect transistors

    Sang-Mo Koo;Akira Fujiwara;Jin-Ping Han;Eric M. Vogel

  • Excellent charge offset stability in a Si-based single-electron tunneling transistor

    Neil M. Zimmerman;William H. Huber;Akira Fujiwara;Yasuo Takahashi

  • A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity

    N. Clément;K. Nishiguchi;J. F. Dufreche;D. Guerin

  • One-by-one trap activation in silicon nanowire transistors

    N. Clément;K. Nishiguchi;A. Fujiwara;D. Vuillaume

  • Gigahertz single-trap electron pumps in silicon

    Gento Yamahata;Katsuhiko Nishiguchi;Akira Fujiwara

  • Spectral blue shift of photoluminescence in strained‐layer Si1−xGex/Si quantum well structures grown by gas‐source Si molecular beam epitaxy

    S. Fukatsu;H. Yoshida;A. Fujiwara;Y. Takahashi

  • Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology

    Katsuhiko Nishiguchi;Akira Fujiwara;Yukinori Ono;Hiroshi Inokawa

  • High Inversion Current in Silicon Nanowire Field Effect Transistors | NIST

    Sang-Mo Koo;Jin-Ping Han;Eric M. Vogel;Curt A. Richter

Frequent Co-Authors

Yasuo Takahashi
Yasuo Takahashi Hokkaido University
Dominique Vuillaume
Dominique Vuillaume Centre national de la recherche scientifique, CNRS
Kohei M. Itoh
Kohei M. Itoh Keio University
Kenji Shiraishi
Kenji Shiraishi Nagoya University
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Takao Someya
Takao Someya University of Tokyo
Yasuhiro Tokura
Yasuhiro Tokura University of Tsukuba
Tsutomu Nohno
Tsutomu Nohno Kawasaki Medical School
Nam Kim
Nam Kim Chungbuk National University

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