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Yasuo Takahashi

Yasuo Takahashi

Hokkaido University
Japan

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 48 3118 2987 113 106 329 7633
Materials Science 51 10006 9665 605 577 368 8138

Yasuo Takahashi publications per year

The chart shows the history of publications by Yasuo Takahashi between 1971 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Yasuo Takahashi published across 55 years, from 1971 to 2025, averaging 7.3 papers a year. Output peaked at 27 publications in 2016. 2 of the 404 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1971 to 2025. Vertical axis: number of publications, 0 to 27. Peak 27 publications in 2016. 1971: 1 publication 1972: 0 publications 1973: 0 publications 1974: 0 publications 1975: 0 publications 1976: 0 publications 1977: 0 publications 1978: 0 publications 1979: 0 publications 1980: 0 publications 1981: 0 publications 1982: 0 publications 1983: 0 publications 1984: 0 publications 1985: 3 publications 1986: 3 publications 1987: 3 publications 1988: 1 publication 1989: 2 publications 1990: 2 publications 1991: 6 publications 1992: 4 publications 1993: 4 publications 1994: 9 publications 1995: 13 publications 1996: 10 publications 1997: 7 publications 1998: 12 publications 1999: 12 publications 2000: 7 publications 2001: 17 publications 2002: 13 publications 2003: 18 publications 2004: 26 publications 2005: 12 publications 2006: 19 publications 2007: 8 publications 2008: 14 publications 2009: 5 publications 2010: 9 publications 2011: 8 publications 2012: 8 publications 2013: 8 publications 2014: 8 publications 2015: 16 publications 2016: 27 publications 2017: 22 publications 2018: 19 publications 2019: 10 publications 2020: 19 publications 2021: 11 publications 2022: 3 publications 2023: 3 publications 2024: 1 publication 2025: 1 publication
1971 2025

404 publications in total across all disciplines

View publications per year as a table
Yasuo Takahashi: publications per year, 1971 to 2025
Year Publications
1971 1
1972 0
1973 0
1974 0
1975 0
1976 0
1977 0
1978 0
1979 0
1980 0
1981 0
1982 0
1983 0
1984 0
1985 3
1986 3
1987 3
1988 1
1989 2
1990 2
1991 6
1992 4
1993 4
1994 9
1995 13
1996 10
1997 7
1998 12
1999 12
2000 7
2001 17
2002 13
2003 18
2004 26
2005 12
2006 19
2007 8
2008 14
2009 5
2010 9
2011 8
2012 8
2013 8
2014 8
2015 16
2016 27
2017 22
2018 19
2019 10
2020 19
2021 11
2022 3
2023 3
2024 1
2025 1
Total 404
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Yasuo Takahashi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yasuo Takahashi sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 314–333 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 329 publications — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276 329
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Yasuo Takahashi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yasuo Takahashi sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 48 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 48 D-Index — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134 48
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Yasuo Takahashi is affiliated with Hokkaido University in Japan and has contributed extensively to fields including Engineering, Materials Science, and Physics and Astronomy. Their research primarily focuses on subfields such as Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Materials Chemistry, Electronic, Optical and Magnetic Materials, and Condensed Matter Physics.

Their published work addresses key topics like Advanced Memory and Neural Computing, Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, Electronic and Structural Properties of Oxides, Advancements in Semiconductor Devices and Circuit Design, Magnetic and transport properties of perovskites and related materials, and Quantum and electron transport phenomena.

Notable recent publications by Yasuo Takahashi include:

  • "Stable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca2RuO4" (2020, ACS Applied Materials & Interfaces)
  • "Dynamics of an Electrically Driven Phase Transition in Ca2RuO4 Thin Films: Nonequilibrium High-Speed Resistive Switching in the Absence of an Abrupt Thermal Transition" (2023, Advanced Electronic Materials)
  • "Periodic Coulomb blockade oscillations observed in single-layered Fe nanodot array" (2020, Thin Solid Films)
  • "Filamentary switching of ReRAM investigated by in-situ TEM" (2020, Japanese Journal of Applied Physics)
  • "Charge-offset stability of single-electron devices based on single-layered Fe nanodot array" (2021, AIP Advances)

Yasuo Takahashi has frequently published in venues such as the Japanese Journal of Applied Physics, ACS Applied Materials & Interfaces, Advanced Electronic Materials, Thin Solid Films, and AIP Advances.

Their frequent co-authors include Atsushi Tsurumaki-Fukuchi, Masashi Arita, Takayoshi Katase, Takayuki Gyakushi, and Keiji Tsubaki.

In addition to journal articles, Yasuo Takahashi has authored books, including a publication by Springer Nature titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations" (2021).

Best Publications

  • Fabrication technique for Si single-electron transistor operating at room temperature

    Y. Takahashi;M. Nagase;H. Namatsu;K. Kurihara

  • Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations

    Hideo Namatsu;Yasuo Takahashi;Kenji Yamazaki;Toru Yamaguchi

  • Ultimately thin double-gate SOI MOSFETs

    T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse

  • Silicon single-electron devices

    Yasuo Takahashi;Yukinori Ono;Akira Fujiwara;Hiroshi Inokawa

  • Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates

    Y. Takahashi;H. Namatsu;K. Kurihara;K. Iwadate

  • Valley polarization in Si(100) at zero magnetic field.

    Kei Takashina;Yukinori Ono;Akira Fujiwara;Yasuo Takahashi

  • Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

    Akira Fujiwara;Hiroshi Inokawa;Kenji Yamazaki;Hideo Namatsu

  • A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors

    H. Inokawa;A. Fujiwara;Y. Takahashi

  • Manipulation and detection of single electrons for future information processing

    Yukinori Ono;Akira Fujiwara;Katsuhiko Nishiguchi;Hiroshi Inokawa

  • Fabrication method for IC-oriented Si single-electron transistors

    Y. Ono;Y. Takahashi;K. Yamazaki;M. Nagase

  • TOPICAL REVIEW: Silicon single-electron devices

    Yasuo Takahashi;Yukinori Ono;Akira Fujiwara;Hiroshi Inokawa

  • Current quantization due to single-electron transfer in Si-wire charge-coupled devices

    Akira Fujiwara;Neil M. Zimmerman;Yukinori Ono;Yasuo Takahashi

  • Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature

    S. J. Shin;C. S. Jung;B. J. Park;T. K. Yoon

  • Multigate single-electron transistors and their application to an exclusive-OR gate

    Yasuo Takahashi;Akira Fujiwara;Kenji Yamazaki;Hideo Namatsu

  • Conductance modulation by individual acceptors in Si nanoscale field-effect transistors

    Y. Ono;K. Nishiguchi;A. Fujiwara;H. Yamaguchi

  • A compact analytical model for asymmetric single-electron tunneling transistors

    H. Inokawa;Y. Takahashi

  • Si complementary single-electron inverter with voltage gain

    Yukinori Ono;Yasuo Takahashi;Kenji Yamazaki;Masao Nagase

  • Photoluminescence from a silicon quantum well formed on separation by implanted oxygen substrate

    Yasuo Takahashi;Tomofumi Furuta;Yukinori Ono;Toshihiko Ishiyama

  • Manipulation of elementary charge in a silicon charge-coupled device.

    Akira Fujiwara;Yasuo Takahashi

  • Excellent charge offset stability in a Si-based single-electron tunneling transistor

    Neil M. Zimmerman;William H. Huber;Akira Fujiwara;Yasuo Takahashi

Frequent Co-Authors

Akira Fujiwara
Akira Fujiwara NTT (Japan)
Kenji Shiraishi
Kenji Shiraishi Nagoya University
Kohei M. Itoh
Kohei M. Itoh Keio University
Hiroshi Yamaguchi
Hiroshi Yamaguchi NTT (Japan)
Takafumi Aoki
Takafumi Aoki Tohoku University
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Hiroshi Okamoto
Hiroshi Okamoto University of Tokyo
Toshio Kamiya
Toshio Kamiya Tokyo Institute of Technology
Syo Matsumura
Syo Matsumura Kyushu University
Hiromichi Ohta
Hiromichi Ohta Hokkaido University

External Links

Personal website of Yasuo Takahashi

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Related Online Degrees & Career Pathways

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Start dates can also impact enrollment decisions. Online programs with flexible schedules provide the opportunity to begin courses without waiting for conventional semesters. Checking out online colleges with flexible start dates ensures students can enroll when it suits their personal and professional lives.

Best Scientists Citing Yasuo Takahashi

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NTT (Japan)

Publications: 54

Toshiro Hiramoto

Toshiro Hiramoto

University of Tokyo

Publications: 48

Sorin Cristoloveanu

Sorin Cristoloveanu

Grenoble Institute of Technology

Publications: 32

Shunri Oda

Shunri Oda

Tokyo Institute of Technology

Publications: 28

Kenji Shiraishi

Kenji Shiraishi

Nagoya University

Publications: 26

Byung-Gook Park

Byung-Gook Park

Seoul National University

Publications: 24

Tetsuo Endoh

Tetsuo Endoh

Tohoku University

Publications: 14

Maud Vinet

Maud Vinet

Grenoble Alpes University

Publications: 14

Jean-Pierre Colinge

Jean-Pierre Colinge

University of California, Davis

Publications: 14

Yoshihiko Kanemitsu

Yoshihiko Kanemitsu

Kyoto University

Publications: 13

Gregory L. Snider

Gregory L. Snider

University of Notre Dame

Publications: 13

Shu-Fen Hu

Shu-Fen Hu

National Taiwan Normal University

Publications: 13

Seiichi Miyazaki

Seiichi Miyazaki

Hiroshima University

Publications: 12

Alexei O. Orlov

Alexei O. Orlov

University of Notre Dame

Publications: 12

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Haroon Ahmed

University of Cambridge

Publications: 11

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