World's Best Scientists 2026 revealed!
Yasuo Takahashi

Yasuo Takahashi

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
7633
World Ranking
3118
National Ranking
113

Materials Science

D-Index
51
Citations
8138
World Ranking
10006
National Ranking
605

Yasuo Takahashi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yasuo Takahashi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 329 publications — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Yasuo Takahashi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yasuo Takahashi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 48 D-Index — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Yasuo Takahashi is affiliated with Hokkaido University in Japan and has contributed extensively to fields including Engineering, Materials Science, and Physics and Astronomy. Their research primarily focuses on subfields such as Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Materials Chemistry, Electronic, Optical and Magnetic Materials, and Condensed Matter Physics.

Their published work addresses key topics like Advanced Memory and Neural Computing, Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, Electronic and Structural Properties of Oxides, Advancements in Semiconductor Devices and Circuit Design, Magnetic and transport properties of perovskites and related materials, and Quantum and electron transport phenomena.

Notable recent publications by Yasuo Takahashi include:

  • "Stable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca2RuO4" (2020, ACS Applied Materials & Interfaces)
  • "Dynamics of an Electrically Driven Phase Transition in Ca2RuO4 Thin Films: Nonequilibrium High-Speed Resistive Switching in the Absence of an Abrupt Thermal Transition" (2023, Advanced Electronic Materials)
  • "Periodic Coulomb blockade oscillations observed in single-layered Fe nanodot array" (2020, Thin Solid Films)
  • "Filamentary switching of ReRAM investigated by in-situ TEM" (2020, Japanese Journal of Applied Physics)
  • "Charge-offset stability of single-electron devices based on single-layered Fe nanodot array" (2021, AIP Advances)

Yasuo Takahashi has frequently published in venues such as the Japanese Journal of Applied Physics, ACS Applied Materials & Interfaces, Advanced Electronic Materials, Thin Solid Films, and AIP Advances.

Their frequent co-authors include Atsushi Tsurumaki-Fukuchi, Masashi Arita, Takayoshi Katase, Takayuki Gyakushi, and Keiji Tsubaki.

In addition to journal articles, Yasuo Takahashi has authored books, including a publication by Springer Nature titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations" (2021).

Best Publications

  • Fabrication technique for Si single-electron transistor operating at room temperature

    Y. Takahashi;M. Nagase;H. Namatsu;K. Kurihara

  • Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations

    Hideo Namatsu;Yasuo Takahashi;Kenji Yamazaki;Toru Yamaguchi

  • Ultimately thin double-gate SOI MOSFETs

    T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse

  • Silicon single-electron devices

    Yasuo Takahashi;Yukinori Ono;Akira Fujiwara;Hiroshi Inokawa

  • Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates

    Y. Takahashi;H. Namatsu;K. Kurihara;K. Iwadate

  • Valley polarization in Si(100) at zero magnetic field.

    Kei Takashina;Yukinori Ono;Akira Fujiwara;Yasuo Takahashi

  • Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

    Akira Fujiwara;Hiroshi Inokawa;Kenji Yamazaki;Hideo Namatsu

  • A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors

    H. Inokawa;A. Fujiwara;Y. Takahashi

  • Manipulation and detection of single electrons for future information processing

    Yukinori Ono;Akira Fujiwara;Katsuhiko Nishiguchi;Hiroshi Inokawa

  • Fabrication method for IC-oriented Si single-electron transistors

    Y. Ono;Y. Takahashi;K. Yamazaki;M. Nagase

  • TOPICAL REVIEW: Silicon single-electron devices

    Yasuo Takahashi;Yukinori Ono;Akira Fujiwara;Hiroshi Inokawa

  • Current quantization due to single-electron transfer in Si-wire charge-coupled devices

    Akira Fujiwara;Neil M. Zimmerman;Yukinori Ono;Yasuo Takahashi

  • Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature

    S. J. Shin;C. S. Jung;B. J. Park;T. K. Yoon

  • Multigate single-electron transistors and their application to an exclusive-OR gate

    Yasuo Takahashi;Akira Fujiwara;Kenji Yamazaki;Hideo Namatsu

  • Conductance modulation by individual acceptors in Si nanoscale field-effect transistors

    Y. Ono;K. Nishiguchi;A. Fujiwara;H. Yamaguchi

  • A compact analytical model for asymmetric single-electron tunneling transistors

    H. Inokawa;Y. Takahashi

  • Si complementary single-electron inverter with voltage gain

    Yukinori Ono;Yasuo Takahashi;Kenji Yamazaki;Masao Nagase

  • Photoluminescence from a silicon quantum well formed on separation by implanted oxygen substrate

    Yasuo Takahashi;Tomofumi Furuta;Yukinori Ono;Toshihiko Ishiyama

  • Manipulation of elementary charge in a silicon charge-coupled device.

    Akira Fujiwara;Yasuo Takahashi

  • Excellent charge offset stability in a Si-based single-electron tunneling transistor

    Neil M. Zimmerman;William H. Huber;Akira Fujiwara;Yasuo Takahashi

Frequent Co-Authors

Akira Fujiwara
Akira Fujiwara NTT (Japan)
Kenji Shiraishi
Kenji Shiraishi Nagoya University
Kohei M. Itoh
Kohei M. Itoh Keio University
Takafumi Aoki
Takafumi Aoki Tohoku University
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Hiroshi Okamoto
Hiroshi Okamoto University of Tokyo
Toshio Kamiya
Toshio Kamiya Tokyo Institute of Technology
Syo Matsumura
Syo Matsumura Kyushu University
Hiromichi Ohta
Hiromichi Ohta Hokkaido University

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