Yasuo Takahashi mainly focuses on Silicon, Optoelectronics, Transistor, MOSFET and Quantum tunnelling. The various areas that Yasuo Takahashi examines in his Silicon study include Wafer, Quantum dot, Condensed matter physics, Atomic physics and Single electron. His Optoelectronics research is multidisciplinary, relying on both Substrate, Nanotechnology and Electrical engineering, Logic gate.
His research investigates the connection with Transistor and areas like Metal which intersect with concerns in Adder and Literal. Yasuo Takahashi interconnects Field-effect transistor and Electron in the investigation of issues within MOSFET. His work deals with themes such as Single electron tunneling, Capacitance and Instability, which intersect with Quantum tunnelling.
The scientist’s investigation covers issues in Optoelectronics, Silicon, Transistor, Nanotechnology and Coulomb blockade. He studies Optoelectronics, focusing on Silicon on insulator in particular. Yasuo Takahashi has included themes like Quantum dot, Charge, Condensed matter physics, Analytical chemistry and Substrate in his Silicon study.
His research integrates issues of Electron and Coulomb in his study of Condensed matter physics. His study in Analytical chemistry is interdisciplinary in nature, drawing from both Thin film and Transmission electron microscopy. The concepts of his Transistor study are interwoven with issues in Capacitance, Quantum tunnelling and Logic gate.
His scientific interests lie mostly in Optoelectronics, Resistive random-access memory, Condensed matter physics, Internal medicine and Programmable metallization cell. The study incorporates disciplines such as Resistive switching, Metal–insulator transition, Nanodot array, Current and Resistive touchscreen in addition to Optoelectronics. His Resistive random-access memory research incorporates themes from Tantalum oxide, Tantalum, Nanoscopic scale, Nanotechnology and Multilevel memory.
His Condensed matter physics study incorporates themes from Excited state and Electron. His work in Single electron tackles topics such as Double gate which are related to areas like Coulomb blockade. The subject of his Coulomb blockade research is within the realm of Transistor.
His primary areas of investigation include Optoelectronics, Resistive random-access memory, Condensed matter physics, Resistive touchscreen and Programmable metallization cell. The Optoelectronics study combines topics in areas such as Charge and Transistor. His Resistive random-access memory research is multidisciplinary, incorporating perspectives in Nanoscopic scale, Scanning transmission electron microscopy, Microscopy, Tantalum and Microstructure.
His research in Condensed matter physics intersects with topics in Bound state, Electron and Delocalized electron. His work carried out in the field of Resistive touchscreen brings together such families of science as Thin film, Tantalum oxide, Annealing and Metal–insulator transition. His research in Programmable metallization cell focuses on subjects like Device degradation, which are connected to Layer.
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Fabrication technique for Si single-electron transistor operating at room temperature
Y. Takahashi;M. Nagase;H. Namatsu;K. Kurihara.
Electronics Letters (1995)
Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations
Hideo Namatsu;Yasuo Takahashi;Kenji Yamazaki;Toru Yamaguchi.
Journal of Vacuum Science & Technology B (1998)
Ultimately thin double-gate SOI MOSFETs
T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse.
IEEE Transactions on Electron Devices (2003)
Silicon single-electron devices
Yasuo Takahashi;Yukinori Ono;Akira Fujiwara;Hiroshi Inokawa.
Journal of Physics: Condensed Matter (2002)
Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates
Y. Takahashi;H. Namatsu;K. Kurihara;K. Iwadate.
IEEE Transactions on Electron Devices (1996)
Valley polarization in Si(100) at zero magnetic field.
Kei Takashina;Yukinori Ono;Akira Fujiwara;Yasuo Takahashi.
Physical Review Letters (2006)
A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors
H. Inokawa;A. Fujiwara;Y. Takahashi.
IEEE Transactions on Electron Devices (2003)
Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor
Akira Fujiwara;Hiroshi Inokawa;Kenji Yamazaki;Hideo Namatsu.
Applied Physics Letters (2006)
Manipulation and detection of single electrons for future information processing
Yukinori Ono;Akira Fujiwara;Katsuhiko Nishiguchi;Hiroshi Inokawa.
Journal of Applied Physics (2005)
Fabrication method for IC-oriented Si single-electron transistors
Y. Ono;Y. Takahashi;K. Yamazaki;M. Nagase.
IEEE Transactions on Electron Devices (2000)
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