D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 39 Citations 6,326 298 World Ranking 2950 National Ranking 114
Materials Science D-index 48 Citations 7,162 338 World Ranking 7654 National Ranking 501

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

Yasuo Takahashi mainly focuses on Silicon, Optoelectronics, Transistor, MOSFET and Quantum tunnelling. The various areas that Yasuo Takahashi examines in his Silicon study include Wafer, Quantum dot, Condensed matter physics, Atomic physics and Single electron. His Optoelectronics research is multidisciplinary, relying on both Substrate, Nanotechnology and Electrical engineering, Logic gate.

His research investigates the connection with Transistor and areas like Metal which intersect with concerns in Adder and Literal. Yasuo Takahashi interconnects Field-effect transistor and Electron in the investigation of issues within MOSFET. His work deals with themes such as Single electron tunneling, Capacitance and Instability, which intersect with Quantum tunnelling.

His most cited work include:

  • Fabrication technique for Si single-electron transistor operating at room temperature (313 citations)
  • Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations (227 citations)
  • Ultimately thin double-gate SOI MOSFETs (199 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Silicon, Transistor, Nanotechnology and Coulomb blockade. He studies Optoelectronics, focusing on Silicon on insulator in particular. Yasuo Takahashi has included themes like Quantum dot, Charge, Condensed matter physics, Analytical chemistry and Substrate in his Silicon study.

His research integrates issues of Electron and Coulomb in his study of Condensed matter physics. His study in Analytical chemistry is interdisciplinary in nature, drawing from both Thin film and Transmission electron microscopy. The concepts of his Transistor study are interwoven with issues in Capacitance, Quantum tunnelling and Logic gate.

He most often published in these fields:

  • Optoelectronics (45.43%)
  • Silicon (26.65%)
  • Transistor (22.59%)

What were the highlights of his more recent work (between 2016-2021)?

  • Optoelectronics (45.43%)
  • Resistive random-access memory (11.42%)
  • Condensed matter physics (13.20%)

In recent papers he was focusing on the following fields of study:

His scientific interests lie mostly in Optoelectronics, Resistive random-access memory, Condensed matter physics, Internal medicine and Programmable metallization cell. The study incorporates disciplines such as Resistive switching, Metal–insulator transition, Nanodot array, Current and Resistive touchscreen in addition to Optoelectronics. His Resistive random-access memory research incorporates themes from Tantalum oxide, Tantalum, Nanoscopic scale, Nanotechnology and Multilevel memory.

His Condensed matter physics study incorporates themes from Excited state and Electron. His work in Single electron tackles topics such as Double gate which are related to areas like Coulomb blockade. The subject of his Coulomb blockade research is within the realm of Transistor.

Between 2016 and 2021, his most popular works were:

  • Safety, tolerability and pharmacokinetics of the fibroblast growth factor receptor inhibitor AZD4547 in Japanese patients with advanced solid tumours: a Phase I study (24 citations)
  • Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices (17 citations)
  • Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx (9 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

His primary areas of investigation include Optoelectronics, Resistive random-access memory, Condensed matter physics, Resistive touchscreen and Programmable metallization cell. The Optoelectronics study combines topics in areas such as Charge and Transistor. His Resistive random-access memory research is multidisciplinary, incorporating perspectives in Nanoscopic scale, Scanning transmission electron microscopy, Microscopy, Tantalum and Microstructure.

His research in Condensed matter physics intersects with topics in Bound state, Electron and Delocalized electron. His work carried out in the field of Resistive touchscreen brings together such families of science as Thin film, Tantalum oxide, Annealing and Metal–insulator transition. His research in Programmable metallization cell focuses on subjects like Device degradation, which are connected to Layer.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Fabrication technique for Si single-electron transistor operating at room temperature

Y. Takahashi;M. Nagase;H. Namatsu;K. Kurihara.
Electronics Letters (1995)

482 Citations

Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations

Hideo Namatsu;Yasuo Takahashi;Kenji Yamazaki;Toru Yamaguchi.
Journal of Vacuum Science & Technology B (1998)

364 Citations

Ultimately thin double-gate SOI MOSFETs

T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse.
IEEE Transactions on Electron Devices (2003)

292 Citations

Silicon single-electron devices

Yasuo Takahashi;Yukinori Ono;Akira Fujiwara;Hiroshi Inokawa.
Journal of Physics: Condensed Matter (2002)

256 Citations

Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates

Y. Takahashi;H. Namatsu;K. Kurihara;K. Iwadate.
IEEE Transactions on Electron Devices (1996)

234 Citations

Valley polarization in Si(100) at zero magnetic field.

Kei Takashina;Yukinori Ono;Akira Fujiwara;Yasuo Takahashi.
Physical Review Letters (2006)

167 Citations

A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors

H. Inokawa;A. Fujiwara;Y. Takahashi.
IEEE Transactions on Electron Devices (2003)

167 Citations

Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

Akira Fujiwara;Hiroshi Inokawa;Kenji Yamazaki;Hideo Namatsu.
Applied Physics Letters (2006)

164 Citations

Manipulation and detection of single electrons for future information processing

Yukinori Ono;Akira Fujiwara;Katsuhiko Nishiguchi;Hiroshi Inokawa.
Journal of Applied Physics (2005)

162 Citations

Fabrication method for IC-oriented Si single-electron transistors

Y. Ono;Y. Takahashi;K. Yamazaki;M. Nagase.
IEEE Transactions on Electron Devices (2000)

155 Citations

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