World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
56
Citations
11751
World Ranking
2824
National Ranking
48

Maud Vinet publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Maud Vinet sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 478 publications — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Maud Vinet D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Maud Vinet sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 56 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Maud Vinet is affiliated with Grenoble Alpes University in France, focusing their research on engineering and physics, with a specialized emphasis on electrical and electronic engineering as well as atomic and molecular physics, and optics. Their work spans several interdisciplinary topics within semiconductor technology, quantum physics, and device engineering.

The main fields of study for Maud Vinet include:

  • Engineering
  • Physics and Astronomy

Within these fields, their research tackles subfields such as:

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Artificial Intelligence
  • Biomedical Engineering
  • Condensed Matter Physics

The scientist's research topics cover a range of semiconductor and quantum phenomena including:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Quantum and electron transport phenomena
  • Quantum Computing Algorithms and Architecture
  • Semiconductor Quantum Structures and Devices
  • Nanowire Synthesis and Applications
  • Quantum Information and Cryptography

Maud Vinet's recent notable publications include:

  • The future transistors, 2023, Nature
  • Scaling silicon-based quantum computing using CMOS technology, 2021, Nature Electronics
  • Strong coupling between a photon and a hole spin in silicon, 2023, Nature Nanotechnology
  • Single-electron operations in a foundry-fabricated array of quantum dots, 2020, Nature Communications
  • A single hole spin with enhanced coherence in natural silicon, 2022, Nature Nanotechnology

The scientist frequently publishes in several venues, with prominent appearances in:

  • Solid-State Electronics
  • arXiv (Cornell University)
  • IEEE Transactions on Electron Devices
  • Nature Nanotechnology
  • Physical Review Applied

Maud Vinet has collaborated frequently with peers such as Tristan Meunier, M. Cassé, Benoît Bertrand, S. De Franceschi, and Bruna Cardoso Paz, each contributing significantly over multiple joint publications.

Best Publications

  • A CMOS silicon spin qubit.

    R. Maurand;X. Jehl;D. Kotekar-Patil;A. Corna

  • The future transistors

    Unknown

  • Advances, challenges and opportunities in 3D CMOS sequential integration

    P. Batude;M. Vinet;B. Previtali;C. Tabone

  • Single-donor ionization energies in a nanoscale CMOS channel

    M. Pierre;R. Wacquez;X. Jehl;M. Sanquer

  • Advances in 3D CMOS sequential integration

    P. Batude;M. Vinet;A. Pouydebasque;C. Le Royer

  • 22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

    R. Carter;J. Mazurier;L. Pirro;J-U. Sachse

  • Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond

    O. Faynot;F. Andrieu;O. Weber;C. Fenouillet-Beranger

  • 3D monolithic integration: Technological challenges and electrical results

    M. Vinet;P. Batude;C. Tabone;B. Previtali

  • Setting up 3D sequential integration for back-illuminated CMOS image sensors with highly miniaturized pixels with low temperature fully depleted SOI transistors

    P. Coudrain;P. Batude;X. Gagnard;C. Leyris

  • Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length

    P. Batude;M. Vinet;C. Xu;B. Previtali

  • 3D monolithic integration

    P. Batude;M. Vinet;A. Pouydebasque;C. Le Royer

  • Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits.

    Alessandro Crippa;Romain Maurand;Léo Bourdet;Dharmraj Kotekar-Patil

  • Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

    Unknown

  • Multiple gate devices: advantages and challenges

    T. Poiroux;M. Vinet;O. Faynot;J. Widiez

  • CIRCUIT A TRANSISTOR INTEGRES DANS TROIS DIMENSIONS ET AYANT UNE TENSION DE SEUIL VT AJUSTABLE DYNAMIQUEMENT

    Batude Perrine;Clavelier Laurent;Jaud Marie Anne;Thomas Olivier

  • Bonded planar double-metal-gate NMOS transistors down to 10 nm

    M. Vinet;T. Poiroux;J. Widiez;J. Lolivier

  • 3DVLSI with CoolCube process: An alternative path to scaling

    P. Batude;C. Fenouillet-Beranger;L. Pasini;V. Lu

  • Gate-based high fidelity spin readout in a CMOS device

    Matias Urdampilleta;David J Niegemann;Emmanuel Chanrion;Baptiste Jadot

  • Performance and design considerations for gate-all-around stacked-NanoWires FETs

    S. Barraud;V. Lapras;B. Previtali;M. P. Samson

  • GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

    L. Hutin;C. Le Royer;J.-F. Damlencourt;J.-M. Hartmann

  • CELLULE DE MEMOIRE SRAM A TRANSISTOR INTEGRES SUR PLUSIEURS NIVEAUX ET DONT LA TENSION DE SEUIL VT EST AJUSTABLE DYNAMIQUEMENT

    Thomas Olivier;Batude Perrine;Pouydebbasque Arnaud;Vinet Maud

  • Germanium on insulator and new 3D architectures opportunities for integration

    M. Vinet;C. Le Royer;P. Batude;J.-F. Damlencourt

  • Simple and controlled single electron transistor based on doping modulation in silicon nanowires

    M. Hofheinz;X. Jehl;M. Sanquer;G. Molas

  • Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives

    M. F. Gonzalez-Zalba;S. de Franceschi;E. Charbon;T. Meunier

Frequent Co-Authors

O. Faynot
O. Faynot CEA LETI
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Thomas Ernst
Thomas Ernst Grenoble Alpes University
Marco Fanciulli
Marco Fanciulli University of Milano-Bicocca
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Bruce B. Doris
Bruce B. Doris IBM (United States)

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