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Thomas Ernst

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 37 5107 4903 97 94 218 6062

Thomas Ernst publications per year

The chart shows the history of publications by Thomas Ernst between 1998 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Thomas Ernst published across 28 years, from 1998 to 2025, averaging 8.4 papers a year. Output peaked at 26 publications in 2008. 2 of the 234 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1998 to 2025. Vertical axis: number of publications, 0 to 26. Peak 26 publications in 2008. 1998: 1 publication 1999: 5 publications 2000: 4 publications 2001: 2 publications 2002: 4 publications 2003: 8 publications 2004: 16 publications 2005: 14 publications 2006: 22 publications 2007: 15 publications 2008: 26 publications 2009: 15 publications 2010: 16 publications 2011: 15 publications 2012: 9 publications 2013: 6 publications 2014: 10 publications 2015: 9 publications 2016: 10 publications 2017: 7 publications 2018: 4 publications 2019: 1 publication 2020: 2 publications 2021: 5 publications 2022: 2 publications 2023: 4 publications 2024: 1 publication 2025: 1 publication
1998 2025

234 publications in total across all disciplines

View publications per year as a table
Thomas Ernst: publications per year, 1998 to 2025
Year Publications
1998 1
1999 5
2000 4
2001 2
2002 4
2003 8
2004 16
2005 14
2006 22
2007 15
2008 26
2009 15
2010 16
2011 15
2012 9
2013 6
2014 10
2015 9
2016 10
2017 7
2018 4
2019 1
2020 2
2021 5
2022 2
2023 4
2024 1
2025 1
Total 234
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Thomas Ernst publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Thomas Ernst sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 214–233 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 218 publications — 35th percentile

35% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431 218
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Thomas Ernst D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Thomas Ernst sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 37 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220 37
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Thomas Ernst is affiliated with Grenoble Alpes University in France and focuses primarily on engineering, with specific subfields including biomedical engineering, electrical and electronic engineering, bioengineering, cellular and molecular neuroscience, and mechanical engineering.

Their research covers a range of topics, with notable emphasis on analytical chemistry and sensors, nanowire synthesis and applications, neuroscience and neural engineering, advancements in semiconductor devices and circuit design, advanced memory and neural computing, modular robots and swarm intelligence, and gas sensing nanomaterials and sensors.

Thomas Ernst has published work in the following venues:

  • Sensors
  • IEEE Transactions on Electron Devices
  • Biosensors
  • Procedia CIRP
  • Advanced Engineering Materials

Recent papers attributed to Ernst include:

  • A Wearable Low-Power Sensing Platform for Environmental and Health Monitoring: The Convergence Project (2021, Sensors)
  • Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation (2022, IEEE Transactions on Electron Devices)
  • Lifecycle modeling for the eco design of the Internet of Things (2020, Procedia CIRP)
  • Neuron-Gated Silicon Nanowire Field Effect Transistors to Follow Single Spike Propagation within Neuronal Network (2020, Advanced Engineering Materials)
  • pH Quantification in Human Dermal Interstitial Fluid Using Ultra-Thin SOI Silicon Nanowire ISFETs and a High-Sensitivity Constant-Current Approach (2023, Biosensors)

Their collaborative network includes frequent coauthors such as Adrian M. Ionescu, Sylvain Barraud, Luca Capua, Yann Sprunger, and Hervé Elettro.

Best Publications

  • Ultimately thin double-gate SOI MOSFETs

    T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse

  • 3-D Sequential Integration: A Key Enabling Technology for Heterogeneous Co-Integration of New Function With CMOS

    P. Batude;T. Ernst;J. Arcamone;G. Arndt

  • Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    S. Barraud;M. Berthome;R. Coquand;M. Casse

  • A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration

    A. Hubert;E. Nowak;K. Tachi;V. Maffini-Alvaro

  • Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond

    O. Faynot;F. Andrieu;O. Weber;C. Fenouillet-Beranger

  • CELONCEL: effective design technique for 3-D monolithic integration targeting high performance integrated circuits

    Shashikanth Bobba;Ashutosh Chakraborty;Olivier Thomas;Perrine Batude

  • Improved split C-V method for effective mobility extraction in sub-0.1-/spl mu/m Si MOSFETs

    K. Romanjek;F. Andrieu;T. Ernst;G. Ghibaudo

  • Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters

    M. Casse;L. Thevenod;B. Guillaumot;L. Tosti

  • Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture

    T. Ernst;T. Ernst;C. Tinella;C. Raynaud;S. Cristoloveanu

  • 15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET

    C. Dupre;A. Hubert;S. Becu;M. Jublot

  • Novel integration process and performances analysis of Low STandby Power (LSTP) 3D multi-channel CMOSFET (MCFET) on SOI with metal / high-K gate stack

    E. Bernard;T. Ernst;B. Guillaumot;N. Vulliet

  • Multiple gate devices: advantages and challenges

    T. Poiroux;M. Vinet;O. Faynot;J. Widiez

  • Engineering strained silicon on insulator wafers with the Smart CutTM technology

    B. Ghyselen;J.-M. Hartmann;T. Ernst;C. Aulnette

  • Performance and design considerations for gate-all-around stacked-NanoWires FETs

    S. Barraud;V. Lapras;B. Previtali;M. P. Samson

  • The last silicon transistor: Nanosheet devices could be the final evolutionary step for Moore's Law

    Unknown

  • Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO 2 gate stack

    V. Barral;T. Poiroux;F. Andrieu;C. Buj-Dufournet

  • Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features

    Thomas P. Ernst;Francois Andrieu;O. Weber;Jean-Michel Hartmann

  • Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack

    T. Ernst;C. Dupre;C. Isheden;E. Bernard

  • Fully Depleted Silicon-on-Insulator nMOSFETs with Tensile Strained High Carbon Content Si1-yCy Channels

    Frédérique Ducroquet;Jean-Michel Hartmann;Claude Tabone;Dominique Lafond

  • Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration?

    T. Ernst;L. Duraffourg;C. Dupre;E. Bernard

  • A Model of Fringing Fields in Short-Channel Planar and Triple-Gate SOI MOSFETs

    T. Ernst;R. Ritzenthaler;O. Faynot;S. Cristoloveanu

Frequent Co-Authors

J. M. Hartmann
J. M. Hartmann CEA LETI
O. Faynot
O. Faynot CEA LETI
Francois Andrieu
Francois Andrieu CEA LETI
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology
Maud Vinet
Maud Vinet Grenoble Alpes University
B. De Salvo
B. De Salvo Meta for Business
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Thierry Baron
Thierry Baron Grenoble Alpes University

External Links

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Related Online Degrees & Career Pathways

For those interested in expanding their expertise beyond traditional Electronics and Electrical Engineering, exploring degrees like instructional design can offer new career opportunities. This field merges technology with education, ideal for engineers looking to transition into training and development roles.

Competency-based learning models are gaining traction, providing flexible options for students balancing work and study. Many competency based universities allow learners to progress at their own speed by demonstrating skills rather than adhering to fixed schedules.

Online education also supports diverse communities, including those serving military families. Several military spouse friendly online colleges offer tailored programs and resources that accommodate unique challenges faced by military dependents.

Additionally, students seeking flexibility will benefit from online schools with multiple start dates, which make it easier to begin courses throughout the year without waiting for traditional semester start times.

Best Scientists Citing Thomas Ernst

Gerard Ghibaudo

Gerard Ghibaudo

Grenoble Alpes University

Publications: 85

Sorin Cristoloveanu

Sorin Cristoloveanu

Grenoble Institute of Technology

Publications: 76

Francois Andrieu

Francois Andrieu

CEA LETI

Publications: 54

O. Faynot

O. Faynot

CEA LETI

Publications: 48

J. M. Hartmann

J. M. Hartmann

CEA LETI

Publications: 40

Arup Bhattacharyya

Arup Bhattacharyya

Micron (United States)

Publications: 38

Sung Kyu Lim

Sung Kyu Lim

Georgia Institute of Technology

Publications: 31

Hang-Ting Lue

Hang-Ting Lue

Macronix International (Taiwan)

Publications: 29

Denis Flandre

Denis Flandre

Université Catholique de Louvain

Publications: 29

Maud Vinet

Maud Vinet

Grenoble Alpes University

Publications: 26

Jean-Pierre Colinge

Jean-Pierre Colinge

University of California, Davis

Publications: 25

Jean-Pierre Raskin

Jean-Pierre Raskin

Université Catholique de Louvain

Publications: 25

Ting-Chang Chang

Ting-Chang Chang

National Sun Yat-sen University

Publications: 23

Scott E. Thompson

Scott E. Thompson

University of Florida

Publications: 22

Thomas Skotnicki

Thomas Skotnicki

Warsaw University of Technology

Publications: 22

Hiroshi Iwai

Hiroshi Iwai

Tokyo Institute of Technology

Publications: 20

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