World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
6882
World Ranking
5281
National Ranking
102

S. Barraud publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where S. Barraud sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 413 publications — 76th percentile

76% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

S. Barraud D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where S. Barraud sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

S. Barraud is affiliated with STMicroelectronics in Switzerland and has contributed to the field of engineering, particularly focusing on electrical and electronic engineering. Their research spans multiple subfields including biomedical engineering, atomic and molecular physics and optics, bioengineering, and artificial intelligence.

Their work covers several main topics within semiconductor technology and related applications. These include:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Nanowire Synthesis and Applications
  • Quantum and electron transport phenomena
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ferroelectric and Negative Capacitance Devices
  • Analytical Chemistry and Sensors

Frequent collaborators who have worked extensively with S. Barraud include Marcelo Antonio Pavanello, M. Cassé, Olivier Faynot, M. Vinet, and Michelly de Souza.

The scientist has published extensively in technical journals, with a notable presence in Solid-State Electronics and IEEE Transactions on Electron Devices. Other prominent publication venues include IEEE Journal of the Electron Devices Society, SSRN Electronic Journal, and arXiv (Cornell University).

Recent papers by S. Barraud highlight topics related to quantum dot devices, semiconductor transistor operation at low temperatures, and sensor technologies. Selected publications are:

  • Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification, 2020, Physical Review Letters
  • Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance, 2020, IEEE Transactions on Electron Devices
  • Nongalvanic Calibration and Operation of a Quantum Dot Thermometer, 2021, Physical Review Applied
  • Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET, 2020, Nanotechnology
  • Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation, 2022, IEEE Transactions on Electron Devices

Best Publications

  • A CMOS silicon spin qubit.

    R. Maurand;X. Jehl;D. Kotekar-Patil;A. Corna

  • Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    S. Barraud;M. Berthome;R. Coquand;M. Casse

  • Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond

    O. Faynot;F. Andrieu;O. Weber;C. Fenouillet-Beranger

  • Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits.

    Alessandro Crippa;Romain Maurand;Léo Bourdet;Dharmraj Kotekar-Patil

  • Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

    Unknown

  • Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm

    S. Barraud;R. Coquand;M. Casse;M. Koyama

  • Probing the limits of gate-based charge sensing

    Unknown

  • Gate-based high fidelity spin readout in a CMOS device

    Matias Urdampilleta;David J Niegemann;Emmanuel Chanrion;Baptiste Jadot

  • Performance and design considerations for gate-all-around stacked-NanoWires FETs

    S. Barraud;V. Lapras;B. Previtali;M. P. Samson

  • Revisited parameter extraction methodology for electrical characterization of junctionless transistors

    D.-Y. Jeon;D.-Y. Jeon;S.J. Park;S.J. Park;M. Mouis;M. Berthomé

  • Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain

    S. Barraud;V. Lapras;M.P. Samson;L. Gaben

  • Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor

    Benoit Voisin;Viet-Hung Nguyen;Julien Renard;Xavier Jehl

  • Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET

    B. Voisin;R. Maurand;S. Barraud;M. Vinet

  • Low-temperature electrical characterization of junctionless transistors

    Dae Young Jeon;Dae Young Jeon;So Jeong Park;So Jeong Park;Mireille Mouis;Sylvain Barraud

  • Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features

    Thomas P. Ernst;Francois Andrieu;O. Weber;Jean-Michel Hartmann

  • Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

    R. Coquand;M. Casse;S. Barraud;D. Cooper

  • 7-Levels-Stacked Nanosheet GAA Transistors for High Performance Computing

    S. Barraud;B. Previtali;C. Vizioz;J.-M. Hartmann

  • Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation

    P. Dollfus;A. Bournel;S. Galdin;S. Barraud

  • 3D Sequential Integration: Application-driven technological achievements and guidelines

    P. Batude;L. Brunet;C. Fenouillet-Beranger;F. Andrieu

  • Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

    Andrea Corna;Léo Bourdet;Romain Maurand;Alessandro Crippa

  • Scaling of high-k/metal-gate Trigate SOI nanowire transistors down to 10nm width

    R. Coquand;S. Barraud;M. Casse;P. Leroux

  • Scaling of high-κ/metal-gate TriGate SOI nanowire transistors down to 10 nm width

    R. Coquand;R. Coquand;S. Barraud;M. Casse;P. Leroux

  • Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs

    F. Andrieu;T. Ernst;F. Lime;F. Rochette

  • Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification.

    S. Schaal;I. Ahmed;J. A. Haigh;L. Hutin

  • A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET

    E. Fuchs;P. Dollfus;G. Le Carval;S. Barraud

  • Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot

    Andrea Corna;Leeo Bourdet;Romain Maurand;Alessandro Crippa

Frequent Co-Authors

O. Faynot
O. Faynot CEA LETI
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Thomas Ernst
Thomas Ernst Grenoble Alpes University
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Jean-Luc Rouvière
Jean-Luc Rouvière Grenoble Alpes University
Bich-Yen Nguyen
Bich-Yen Nguyen Soitec (France)

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