World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
6882
World Ranking
5281
National Ranking
102

Overview

S. Barraud is affiliated with STMicroelectronics in Switzerland and has contributed to the field of engineering, particularly focusing on electrical and electronic engineering. Their research spans multiple subfields including biomedical engineering, atomic and molecular physics and optics, bioengineering, and artificial intelligence.

Their work covers several main topics within semiconductor technology and related applications. These include:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Nanowire Synthesis and Applications
  • Quantum and electron transport phenomena
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ferroelectric and Negative Capacitance Devices
  • Analytical Chemistry and Sensors

Frequent collaborators who have worked extensively with S. Barraud include Marcelo Antonio Pavanello, M. Cassé, Olivier Faynot, M. Vinet, and Michelly de Souza.

The scientist has published extensively in technical journals, with a notable presence in Solid-State Electronics and IEEE Transactions on Electron Devices. Other prominent publication venues include IEEE Journal of the Electron Devices Society, SSRN Electronic Journal, and arXiv (Cornell University).

Recent papers by S. Barraud highlight topics related to quantum dot devices, semiconductor transistor operation at low temperatures, and sensor technologies. Selected publications are:

  • Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification, 2020, Physical Review Letters
  • Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance, 2020, IEEE Transactions on Electron Devices
  • Nongalvanic Calibration and Operation of a Quantum Dot Thermometer, 2021, Physical Review Applied
  • Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET, 2020, Nanotechnology
  • Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation, 2022, IEEE Transactions on Electron Devices

Best Publications

  • A CMOS silicon spin qubit.

    R. Maurand;X. Jehl;D. Kotekar-Patil;A. Corna

  • Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    S. Barraud;M. Berthome;R. Coquand;M. Casse

  • Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond

    O. Faynot;F. Andrieu;O. Weber;C. Fenouillet-Beranger

  • Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits.

    Alessandro Crippa;Romain Maurand;Léo Bourdet;Dharmraj Kotekar-Patil

  • Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

    Unknown

  • Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm

    S. Barraud;R. Coquand;M. Casse;M. Koyama

  • Probing the limits of gate-based charge sensing

    Unknown

  • Gate-based high fidelity spin readout in a CMOS device

    Matias Urdampilleta;David J Niegemann;Emmanuel Chanrion;Baptiste Jadot

  • Performance and design considerations for gate-all-around stacked-NanoWires FETs

    S. Barraud;V. Lapras;B. Previtali;M. P. Samson

  • Revisited parameter extraction methodology for electrical characterization of junctionless transistors

    D.-Y. Jeon;D.-Y. Jeon;S.J. Park;S.J. Park;M. Mouis;M. Berthomé

  • Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain

    S. Barraud;V. Lapras;M.P. Samson;L. Gaben

  • Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor

    Benoit Voisin;Viet-Hung Nguyen;Julien Renard;Xavier Jehl

  • Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET

    B. Voisin;R. Maurand;S. Barraud;M. Vinet

  • Low-temperature electrical characterization of junctionless transistors

    Dae Young Jeon;Dae Young Jeon;So Jeong Park;So Jeong Park;Mireille Mouis;Sylvain Barraud

  • Nanoscaled MOSFET Transistors on Strained Si, SiGe, Ge Layers: Some Integration and Electrical Properties Features

    Thomas P. Ernst;Francois Andrieu;O. Weber;Jean-Michel Hartmann

  • Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

    R. Coquand;M. Casse;S. Barraud;D. Cooper

  • 7-Levels-Stacked Nanosheet GAA Transistors for High Performance Computing

    S. Barraud;B. Previtali;C. Vizioz;J.-M. Hartmann

  • Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation

    P. Dollfus;A. Bournel;S. Galdin;S. Barraud

  • 3D Sequential Integration: Application-driven technological achievements and guidelines

    P. Batude;L. Brunet;C. Fenouillet-Beranger;F. Andrieu

  • Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

    Andrea Corna;Léo Bourdet;Romain Maurand;Alessandro Crippa

  • Scaling of high-k/metal-gate Trigate SOI nanowire transistors down to 10nm width

    R. Coquand;S. Barraud;M. Casse;P. Leroux

  • Scaling of high-κ/metal-gate TriGate SOI nanowire transistors down to 10 nm width

    R. Coquand;R. Coquand;S. Barraud;M. Casse;P. Leroux

  • Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs

    F. Andrieu;T. Ernst;F. Lime;F. Rochette

  • Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification.

    S. Schaal;I. Ahmed;J. A. Haigh;L. Hutin

  • A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET

    E. Fuchs;P. Dollfus;G. Le Carval;S. Barraud

  • Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot

    Andrea Corna;Leeo Bourdet;Romain Maurand;Alessandro Crippa

Frequent Co-Authors

O. Faynot
O. Faynot CEA LETI
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Thomas Ernst
Thomas Ernst Grenoble Alpes University
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Jean-Luc Rouvière
Jean-Luc Rouvière Grenoble Alpes University
Bich-Yen Nguyen
Bich-Yen Nguyen Soitec (France)

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For those interested in Electronics and Electrical Engineering, pursuing related accelerated online degree programs can be a great way to advance quickly while balancing work and life commitments. These programs offer flexibility and allow students to earn credentials in less time than traditional degrees.

Another promising path is exploring degrees in instructional design. This field combines technology and education, ideal for engineers wanting to develop training materials or e-learning modules, expanding career opportunities beyond conventional engineering roles.

Many students benefit from best competency-based colleges, which focus on mastering skills at your own pace rather than seat time. This approach is especially advantageous for those with existing expertise who want to fast-track their qualifications in technical subjects.

Additionally, for military spouses and dependents, accessing quality education can be a challenge. Thankfully, there are online colleges for military spouses designed to offer convenient and affordable pathways, helping them pursue degrees and build strong career foundations in engineering and beyond.

Best Scientists Citing S. Barraud

Trending Scientists