World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
59
Citations
17163
World Ranking
1709
National Ranking
41

Christian Enz publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Christian Enz sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 403 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Christian Enz D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Christian Enz sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 59 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Christian Enz is a researcher affiliated with the École Polytechnique Fédérale de Lausanne in Switzerland. Their work predominantly spans the field of Engineering with a strong focus on Electrical and Electronic Engineering. Additional subfields include Biomedical Engineering, Atomic and Molecular Physics and Optics, Artificial Intelligence, and Biophysics.

The research topics covered by Christian Enz illustrate a deep involvement in semiconductor technology and circuit design. The key areas of focus are:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Radio Frequency Integrated Circuit Design
  • Silicon Carbide Semiconductor Technologies
  • Radiation Effects in Electronics
  • Analog and Mixed-Signal Circuit Design
  • Microwave Engineering and Waveguides

Christian Enz has contributed to multiple academic journals and conferences. The frequent venues where their work appears include:

  • IEEE Transactions on Nuclear Science
  • IEEE Journal of the Electron Devices Society
  • Solid-State Electronics
  • IEEE Electron Device Letters
  • Sensors

Selected recent papers authored or coauthored by Christian Enz showcase the focus on semiconductor device physics and sensor technologies. These include:

  • "Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs," 2020, IEEE Journal of the Electron Devices Society
  • "Microfluidics by Additive Manufacturing for Wearable Biosensors: A Review," 2020, Sensors
  • "Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses," 2020, IEEE Transactions on Nuclear Science
  • "Inflection Phenomenon in Cryogenic MOSFET Behavior," 2020, IEEE Transactions on Electron Devices
  • "TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses," 2021, IEEE Transactions on Nuclear Science

Their published books include titles such as "Ultra-Low Power FM-UWB Transceivers for IoT," released by River Publishers eBooks in 2022.

Christian Enz frequently collaborates with a number of researchers. Their notable coauthors consist of:

  • Hung-Chi Han
  • Farzan Jazaeri
  • S. Mattiazzo
  • A. Basçhirotto
  • Vladimir Kopta

Best Publications

  • Circuit techniques for reducing the effects of op-amp imperfections: autozeroing, correlated double sampling, and chopper stabilization

    C.C. Enz;G.C. Temes

  • An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications

    Christian C. Enz;François Krummenacher;Eric A. Vittoz

  • Minimum-energy broadcast in all-wireless networks: NP-completeness and distribution issues

    Mario Čagalj;Jean-Pierre Hubaux;Christian Enz

  • WiseNET: an ultralow-power wireless sensor network solution

    C.C. Enz;A. El-Hoiydi;J.-D. Decotignie;V. Peiris

  • Charge-Based MOS Transistor Modeling

    Christian C. Enz;Eric A. Vittoz

  • Charge-Based MOS Transistor Modeling - The EKV Model for Low-Power and RF IC Design

    Christian C. Enz;Eric A. Vittoz

  • MOS transistor modeling for RF IC design

    C. Enz;Y. Cheng

  • A CMOS chopper amplifier

    C.C. Enz;E.A. Vittoz;F. Krummenacher

  • wiseMAC, an ultra low power MAC protocol for the wiseNET wireless sensor network.

    Amre El-Hoiydi;Jean-Dominique Decotignie;Christian C. Enz;E. Leroux

  • Cryogenic MOS Transistor Model

    Arnout Beckers;Farzan Jazaeri;Christian Enz

  • An MOS transistor model for RF IC design valid in all regions of operation

    C. Enz

  • Design of high-Q varactors for low-power wireless applications using a standard CMOS process

    A.-S. Porret;T. Melly;C.C. Enz;E.A. Vittoz

  • CMOS low-power analog circuit design

    C.C. Enz;E.A. Vittoz

  • A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism

    Jean-Michel Sallese;François Krummenacher;Fabien Prégaldiny;Christophe Lallement

  • Poster abstract: wiseMAC, an ultra low power MAC protocol for the wiseNET wireless sensor network

    A. El-Hoiydi;J.-D. Decotignie;C. Enz;E. Le Roux

  • Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

    Arnout Beckers;Farzan Jazaeri;Christian Enz

  • Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz

    S.H.-M. Jen;C.C. Enz;D.R. Pehlke;M. Schroter

  • Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K

    Arnout Beckers;Farzan Jazaeri;Christian Enz

  • BSIM6: Analog and RF Compact Model for Bulk MOSFET

    Yogesh Singh Chauhan;Sriramkumar Venugopalan;Maria-Anna Chalkiadaki;Muhammed Ahosan Ul Karim

  • An ultralow-power UHF transceiver integrated in a standard digital CMOS process: architecture and receiver

    A.-S. Porret;T. Melly;D. Python;C.C. Enz

  • A CMOS Chopper Amplifier

    C. C. Enz

Frequent Co-Authors

Eric A. Vittoz
Eric A. Vittoz École Polytechnique Fédérale de Lausanne
Krishna V. Palem
Krishna V. Palem Rice University
Adrian M. Ionescu
Adrian M. Ionescu École Polytechnique Fédérale de Lausanne
Yogesh Singh Chauhan
Yogesh Singh Chauhan Indian Institute of Technology Kanpur
Pierre Jarron
Pierre Jarron European Organization for Nuclear Research
Chenming Hu
Chenming Hu University of California, Berkeley
Ali M. Niknejad
Ali M. Niknejad University of California, Berkeley
Alessandro Paccagnella
Alessandro Paccagnella University of Padua
Rachid Cherkaoui
Rachid Cherkaoui École Polytechnique Fédérale de Lausanne
Jean-Pierre Hubaux
Jean-Pierre Hubaux École Polytechnique Fédérale de Lausanne

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