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Yogesh Singh Chauhan

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 44 3748 3599 35 35 483 7578

Yogesh Singh Chauhan publications per year

The chart shows the history of publications by Yogesh Singh Chauhan between 2005 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Yogesh Singh Chauhan published across 22 years, from 2005 to 2026, averaging 25.8 papers a year. Output peaked at 112 publications in 2024. 48 of the 568 publications appeared in the last two years.

No. of publications
25 50 75 100
Bar chart. Horizontal axis: year, 2005 to 2026. Vertical axis: number of publications, 0 to 112. Peak 112 publications in 2024. 2005: 2 publications 2006: 11 publications 2007: 9 publications 2008: 5 publications 2009: 0 publications 2010: 4 publications 2011: 3 publications 2012: 13 publications 2013: 7 publications 2014: 15 publications 2015: 20 publications 2016: 43 publications 2017: 28 publications 2018: 39 publications 2019: 30 publications 2020: 31 publications 2021: 30 publications 2022: 47 publications 2023: 71 publications 2024: 112 publications 2025: 47 publications 2026: 1 publication
2005 2026

568 publications in total across all disciplines

View publications per year as a table
Yogesh Singh Chauhan: publications per year, 2005 to 2026
Year Publications
2005 2
2006 11
2007 9
2008 5
2009 0
2010 4
2011 3
2012 13
2013 7
2014 15
2015 20
2016 43
2017 28
2018 39
2019 30
2020 31
2021 30
2022 47
2023 71
2024 112
2025 47
2026 1
Total 568
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Yogesh Singh Chauhan publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yogesh Singh Chauhan sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 474–493 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 483 publications — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117 483
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Yogesh Singh Chauhan D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yogesh Singh Chauhan sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 44 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 44 D-Index — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155 44
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Yogesh Singh Chauhan is a researcher affiliated with the Indian Institute of Technology Kanpur in India. The body of work spans multiple fields within engineering and materials science, particularly focusing on semiconductor devices and materials.

Their main fields of study include:

  • Engineering
  • Materials Science

Within these broader fields, the research delves into several subfields such as:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics
  • Biomedical Engineering
  • Atomic and Molecular Physics, and Optics

The topics of their work cover a range of areas primarily related to semiconductor technology and device engineering. Key topics include:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Ferroelectric and Negative Capacitance Devices
  • GaN-based semiconductor devices and materials
  • Advanced Memory and Neural Computing
  • Radio Frequency Integrated Circuit Design
  • 2D Materials and Applications

Chauhan's recent papers highlight specific contributions to semiconductor research and device modeling:

  • First demonstration of in-memory computing crossbar using multi-level Cell FeFET (2023), Nature Communications
  • BSIM Compact Model of Quantum Confinement in Advanced Nanosheet FETs (2020), IEEE Transactions on Electron Devices
  • Impact of Variability on Processor Performance in Negative Capacitance FinFET Technology (2020), IEEE Transactions on Circuits and Systems I Regular Papers
  • Crossing the Nernst Limit (59 mV/pH) of Sensitivity Through Tunneling Transistor-Based Biosensor (2020), IEEE Sensors Journal
  • Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors (2021), IEEE Transactions on Electron Devices

The publication record includes a substantial number of appearances in key academic venues, with frequent publications in:

  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • arXiv (Cornell University)
  • IEEE Transactions on Circuits and Systems I Regular Papers
  • SSRN Electronic Journal

Chauhan collaborates with various co-authors, among whom the most frequent are:

  • Hussam Amrouch
  • Ahtisham Pampori
  • Girish Pahwa
  • Chenming Hu
  • Somnath Bhowmick

Best Publications

  • FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard

    Yogesh Singh Chauhan;Darsen Duane Lu;Vanugopalan Sriramkumar;Sourabh Khandelwal

  • Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

    S. Khandelwal;Y. S. Chauhan;T. A. Fjeldly

  • Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part I: Model Description

    Girish Pahwa;Tapas Dutta;Amit Agarwal;Sourabh Khandelwal

  • FinFET modeling for IC simulation and design

    Chenming Hu;Darsen D Lu;Yogesh Singh Chauhan

  • Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Above-Threshold Behavior

    Girish Pahwa;Amit Agarwal;Yogesh Singh Chauhan

  • BSIM6: Analog and RF Compact Model for Bulk MOSFET

    Yogesh Singh Chauhan;Sriramkumar Venugopalan;Maria-Anna Chalkiadaki;Muhammed Ahosan Ul Karim

  • Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

    Sourabh Khandelwal;Chandan Yadav;Shantanu Agnihotri;Yogesh Singh Chauhan

  • BSIM—SPICE Models Enable FinFET and UTB IC Designs

    Navid Paydavosi;Sriramkumar Venugopalan;Yogesh Singh Chauhan;Juan Pablo Duarte

  • ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model

    Sourabh Khandelwal;Yogesh Singh Chauhan;Tor A. Fjeldly;Sudip Ghosh

  • Physical Insights on Negative Capacitance Transistors in Nonhysteresis and Hysteresis Regimes: MFMIS Versus MFIS Structures

    Girish Pahwa;Tapas Dutta;Amit Agarwal;Yogesh Singh Chauhan

  • BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate Control

    S. Khandelwal;Y. S. Chauhan;D. D. Lu;S. Venugopalan

  • Compact Model for Ferroelectric Negative Capacitance Transistor With MFIS Structure

    Girish Pahwa;Tapas Dutta;Amit Agarwal;Yogesh Singh Chauhan

  • Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

    K. Akarvardar;C. Eggimann;D. Tsamados;Y. Singh Chauhan

  • Capacitance Modeling in Dual Field-Plate Power GaN HEMT for Accurate Switching Behavior

    Sheikh Aamir Ahsan;Sudip Ghosh;Khushboo Sharma;Avirup Dasgupta

  • ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part-II: Modeling of Charge Trapping

    Sayed Ali Albahrani;Dhawal Mahajan;Jason Hodges;Yogesh Singh Chauhan

  • Thickness and electric-field-dependent polarizability and dielectric constant in phosphorene

    Piyush Kumar;B. S. Bhadoria;Sanjay Kumar;Somnath Bhowmick

  • BSIM-CMG: Standard FinFET compact model for advanced circuit design

    Juan Pablo Duarte;Sourabh Khandelwal;Aditya Medury;Chenming Hu

  • Negative Capacitance Transistor to Address the Fundamental Limitations in Technology Scaling: Processor Performance

    Hussam Amrouch;Girish Pahwa;Amol D. Gaidhane;Jorg Henkel

  • Performance Evaluation of 7-nm Node Negative Capacitance FinFET-Based SRAM

    Tapas Dutta;Girish Pahwa;Amit Ranjan Trivedi;Saurabh Sinha

  • RF SOI Switch FET Design and Modeling Tradeoffs for GSM Applications

    Shyam Parthasarathy;Amit Trivedi;Saurabh Sirohi;Robert Groves

  • Physics-Based Multi-Bias RF Large-Signal GaN HEMT Modeling and Parameter Extraction Flow

    Sheikh Aamir Ahsan;Sudip Ghosh;Sourabh Khandelwal;Yogesh Singh Chauhan

  • Designing energy efficient and hysteresis free negative capacitance FinFET with negative DIBL and 3.5X I ON using compact modeling approach

    Girish Pahwa;Tapas Dutta;Amit Agarwal;Yogesh Singh Chauhan

Frequent Co-Authors

Sourabh Khandelwal
Sourabh Khandelwal Macquarie University
Chenming Hu
Chenming Hu University of California, Berkeley
Amit Agarwal
Amit Agarwal Indian Institute of Technology Kanpur
Adrian M. Ionescu
Adrian M. Ionescu École Polytechnique Fédérale de Lausanne
Ali M. Niknejad
Ali M. Niknejad University of California, Berkeley
Jorg Henkel
Jorg Henkel Karlsruhe Institute of Technology
Sayeef Salahuddin
Sayeef Salahuddin University of California, Berkeley
Christian Enz
Christian Enz École Polytechnique Fédérale de Lausanne
Tor A. Fjeldly
Tor A. Fjeldly Norwegian University of Science and Technology
Souvik Mahapatra
Souvik Mahapatra Indian Institute of Technology Bombay

External Links

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Best Scientists Citing Yogesh Singh Chauhan

Jorg Henkel

Jorg Henkel

Karlsruhe Institute of Technology

Publications: 34

Sourabh Khandelwal

Sourabh Khandelwal

Macquarie University

Publications: 31

Chenming Hu

Chenming Hu

University of California, Berkeley

Publications: 26

Sayeef Salahuddin

Sayeef Salahuddin

University of California, Berkeley

Publications: 23

Christian Enz

Christian Enz

École Polytechnique Fédérale de Lausanne

Publications: 18

Genquan Han

Genquan Han

Xidian University

Publications: 15

Jincheng Zhang

Jincheng Zhang

Xidian University

Publications: 13

Adrian M. Ionescu

Adrian M. Ionescu

École Polytechnique Fédérale de Lausanne

Publications: 10

Changhwan Shin

Changhwan Shin

Korea University

Publications: 10

François M. Peeters

François M. Peeters

University of Antwerp

Publications: 10

Giovanni Crupi

Giovanni Crupi

University of Messina

Publications: 10

Denis Flandre

Denis Flandre

Université Catholique de Louvain

Publications: 10

Mridula Gupta

Mridula Gupta

University of Delhi

Publications: 9

D. Nirmal

D. Nirmal

Karunya University

Publications: 9

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David Wei Zhang

Fudan University

Publications: 8

Amit Agarwal

Amit Agarwal

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Publications: 8

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