World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
71
Citations
29823
World Ranking
832
National Ranking
356

Materials Science

D-Index
72
Citations
30743
World Ranking
3950
National Ranking
1065

Research.com Recognitions

  • 2019 - Fellow of American Physical Society (APS) Citation For pioneering the physics of negative capacitance and its translation to overcome the Boltzmann Tyranny in microelectronics
  • 2019 - IEEE Fellow For contributions to low power electronic and spintronic devices
  • 2010 - Hellman Fellow

Overview

Sayeef Salahuddin is affiliated with the University of California, Berkeley in the United States. Their research focuses primarily in the fields of Engineering and Materials Science, with a significant concentration in Electrical and Electronic Engineering and Materials Chemistry.

The scientist's work spans various subfields including Atomic and Molecular Physics, and Optics; Electronic, Optical and Magnetic Materials; and Condensed Matter Physics. Main research topics cover Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, Advancements in Semiconductor Devices and Circuit Design, Ferroelectric and Piezoelectric Materials, Advanced Memory and Neural Computing, Magnetic properties of thin films, and Electronic and Structural Properties of Oxides.

Salahuddin has contributed to a range of publication venues, with frequent appearances in IEEE Transactions on Electron Devices, IEEE Electron Device Letters, arXiv (Cornell University), Nature, and Advanced Materials.

Recent notable publications include:

  • Enhanced ferroelectricity in ultrathin films grown directly on silicon (2020, Nature)
  • Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors (2022, Nature)
  • Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles (2021, IEEE Electron Device Letters)
  • Local negative permittivity and topological phase transition in polar skyrmions (2020, Nature Materials)
  • Emergent ferroelectricity in subnanometer binary oxide films on silicon (2022, Science)

The scientist frequently collaborates with other researchers, with notable coauthors including Chenming Hu, Girish Pahwa, Avirup Dasgupta, Suraj Cheema, and Nirmaan Shanker.

Salahuddin has received several awards, including the IEEE Fellow in 2019 for contributions to low power electronic and spintronic devices, Fellow of the American Physical Society (APS) in 2019 for pioneering the physics of negative capacitance and its translation to overcome the Boltzmann Tyranny in microelectronics, and the Hellman Fellowship in 2010.

Best Publications

  • Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

    Sheneve Z. Butler;Shawna M. Hollen;Linyou Cao;Yi Cui;Yi Cui

  • Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

    Sayeef Salahuddin;Supriyo Datta

  • How Good Can Monolayer MoS2 Transistors Be

    Youngki Yoon;Kartik Ganapathi;Sayeef Salahuddin

  • Memory leads the way to better computing

    H.-S. Philip Wong;Sayeef Salahuddin

  • Proposal for an all-spin logic device with built-in memory

    Behtash Behin-Aein;Deepanjan Datta;Sayeef Salahuddin;Supriyo Datta

  • Negative Capacitance in a Ferroelectric Capacitor

    Asif Khan;Korok Chatterjee;Brian Wang;Steven Drapcho

  • Negative capacitance in a ferroelectric capacitor.

    Asif Islam Khan;Korok Chatterjee;Brian Wang;Steven Drapcho

  • Enhanced ferroelectricity in ultrathin films grown directly on silicon.

    Suraj S. Cheema;Daewoong Kwon;Daewoong Kwon;Nirmaan Shanker;Roberto dos Reis

  • Deterministic switching of ferromagnetism at room temperature using an electric field

    J.T. Heron;J.L. Bosse;Q. He;Y. Gao

  • Room-temperature antiferromagnetic memory resistor

    X. Marti;I. Fina;C. Frontera;Jian Liu

  • The era of hyper-scaling in electronics

    Sayeef Salahuddin;Kai Ni;Suman Datta

  • Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure.

    Jt T. Heron;M. Trassin;K. Ashraf;M. Gajek

  • Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

    Hyunhyub Ko;Kuniharu Takei;Kuniharu Takei;Rehan Kapadia;Rehan Kapadia;Steven Chuang;Steven Chuang

  • Spatially resolved steady-state negative capacitance.

    Ajay K. Yadav;Kayla X. Nguyen;Zijian Hong;Pablo García-Fernández

  • Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

    Unknown

  • Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures

    Asif Islam Khan;Debanjan Bhowmik;Pu Yu;Sung Joo Kim

  • Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation

    Asif I. Khan;Chun W. Yeung;Chenming Hu;Sayeef Salahuddin

  • Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy

    Long You;OukJae Lee;Debanjan Bhowmik;Dominic Labanowski

  • Sub-60mV-swing negative-capacitance FinFET without hysteresis

    Kai-Shin Li;Pin-Guang Chen;Tung-Yan Lai;Chang-Hsien Lin

  • Sustained Sub-60 mV/decade switching via the negative capacitance effect in MoS2 transistors

    Felicia A. Mcguire;Yuh-Chen Lin;Katherine Margaret Price;G. Bruce Rayner

  • Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

    Michael Hoffmann;Milan Pešić;Korok Chatterjee;Asif I. Khan

  • Spin Hall effect clocking of nanomagnetic logic without a magnetic field

    Debanjan Bhowmik;Long You;Sayeef Salahuddin

Frequent Co-Authors

Chenming Hu
Chenming Hu University of California, Berkeley
Asif Islam Khan
Asif Islam Khan Georgia Institute of Technology
Ramamoorthy Ramesh
Ramamoorthy Ramesh Rice University
Jeffrey Bokor
Jeffrey Bokor University of California, Berkeley
Supriyo Datta
Supriyo Datta Purdue University West Lafayette
Sourabh Khandelwal
Sourabh Khandelwal Macquarie University
Yogesh Singh Chauhan
Yogesh Singh Chauhan Indian Institute of Technology Kanpur
Peter Fischer
Peter Fischer Lawrence Berkeley National Laboratory
Darrell G. Schlom
Darrell G. Schlom Cornell University
Suman Datta
Suman Datta Georgia Institute of Technology

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For students pursuing Electronics and Electrical Engineering, branching into related fields can broaden career opportunities. Many professionals find value in supplementing their technical knowledge with leadership skills, making an accelerated project management degree online a strategic choice. This allows working engineers to quickly gain essential management capabilities without pausing their careers.

Those interested in building foundational expertise can explore options like a project management bachelor degree online. Such programs provide a flexible way to develop project coordination skills alongside core engineering subjects, preparing graduates for diverse roles.

Adult learners balancing work and study often benefit from accelerated bachelors degree programs for adults. These programs recognize the unique challenges adults face and offer condensed formats that help students finish faster while maintaining quality education.

Additionally, engineers moving into educational roles might consider a master's in instructional design. The best online teaching master's programs enable professionals to design effective learning experiences, an increasingly valuable skill in technical training and corporate education settings.

Best Scientists Citing Sayeef Salahuddin

Trending Scientists

Recently Published Articles