World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
71
Citations
29823
World Ranking
832
National Ranking
357

Materials Science

D-Index
72
Citations
30743
World Ranking
3948
National Ranking
1063

Sayeef Salahuddin publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sayeef Salahuddin sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 330 publications — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Sayeef Salahuddin D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sayeef Salahuddin sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 71 D-Index — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2019 - Fellow of American Physical Society (APS) Citation For pioneering the physics of negative capacitance and its translation to overcome the Boltzmann Tyranny in microelectronics
  • 2019 - IEEE Fellow For contributions to low power electronic and spintronic devices
  • 2010 - Hellman Fellow

Overview

Sayeef Salahuddin is affiliated with the University of California, Berkeley in the United States. Their research focuses primarily in the fields of Engineering and Materials Science, with a significant concentration in Electrical and Electronic Engineering and Materials Chemistry.

The scientist's work spans various subfields including Atomic and Molecular Physics, and Optics; Electronic, Optical and Magnetic Materials; and Condensed Matter Physics. Main research topics cover Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, Advancements in Semiconductor Devices and Circuit Design, Ferroelectric and Piezoelectric Materials, Advanced Memory and Neural Computing, Magnetic properties of thin films, and Electronic and Structural Properties of Oxides.

Salahuddin has contributed to a range of publication venues, with frequent appearances in IEEE Transactions on Electron Devices, IEEE Electron Device Letters, arXiv (Cornell University), Nature, and Advanced Materials.

Recent notable publications include:

  • Enhanced ferroelectricity in ultrathin films grown directly on silicon (2020, Nature)
  • Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors (2022, Nature)
  • Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles (2021, IEEE Electron Device Letters)
  • Local negative permittivity and topological phase transition in polar skyrmions (2020, Nature Materials)
  • Emergent ferroelectricity in subnanometer binary oxide films on silicon (2022, Science)

The scientist frequently collaborates with other researchers, with notable coauthors including Chenming Hu, Girish Pahwa, Avirup Dasgupta, Suraj Cheema, and Nirmaan Shanker.

Salahuddin has received several awards, including the IEEE Fellow in 2019 for contributions to low power electronic and spintronic devices, Fellow of the American Physical Society (APS) in 2019 for pioneering the physics of negative capacitance and its translation to overcome the Boltzmann Tyranny in microelectronics, and the Hellman Fellowship in 2010.

Best Publications

  • Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

    Sheneve Z. Butler;Shawna M. Hollen;Linyou Cao;Yi Cui;Yi Cui

  • Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

    Sayeef Salahuddin;Supriyo Datta

  • How Good Can Monolayer MoS2 Transistors Be

    Youngki Yoon;Kartik Ganapathi;Sayeef Salahuddin

  • Memory leads the way to better computing

    H.-S. Philip Wong;Sayeef Salahuddin

  • Proposal for an all-spin logic device with built-in memory

    Behtash Behin-Aein;Deepanjan Datta;Sayeef Salahuddin;Supriyo Datta

  • Negative Capacitance in a Ferroelectric Capacitor

    Asif Khan;Korok Chatterjee;Brian Wang;Steven Drapcho

  • Negative capacitance in a ferroelectric capacitor.

    Asif Islam Khan;Korok Chatterjee;Brian Wang;Steven Drapcho

  • Enhanced ferroelectricity in ultrathin films grown directly on silicon.

    Suraj S. Cheema;Daewoong Kwon;Daewoong Kwon;Nirmaan Shanker;Roberto dos Reis

  • Deterministic switching of ferromagnetism at room temperature using an electric field

    J.T. Heron;J.L. Bosse;Q. He;Y. Gao

  • Room-temperature antiferromagnetic memory resistor

    X. Marti;I. Fina;C. Frontera;Jian Liu

  • The era of hyper-scaling in electronics

    Sayeef Salahuddin;Kai Ni;Suman Datta

  • Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure.

    Jt T. Heron;M. Trassin;K. Ashraf;M. Gajek

  • Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

    Hyunhyub Ko;Kuniharu Takei;Kuniharu Takei;Rehan Kapadia;Rehan Kapadia;Steven Chuang;Steven Chuang

  • Spatially resolved steady-state negative capacitance.

    Ajay K. Yadav;Kayla X. Nguyen;Zijian Hong;Pablo García-Fernández

  • Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

    Unknown

  • Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures

    Asif Islam Khan;Debanjan Bhowmik;Pu Yu;Sung Joo Kim

  • Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation

    Asif I. Khan;Chun W. Yeung;Chenming Hu;Sayeef Salahuddin

  • Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy

    Long You;OukJae Lee;Debanjan Bhowmik;Dominic Labanowski

  • Sub-60mV-swing negative-capacitance FinFET without hysteresis

    Kai-Shin Li;Pin-Guang Chen;Tung-Yan Lai;Chang-Hsien Lin

  • Sustained Sub-60 mV/decade switching via the negative capacitance effect in MoS2 transistors

    Felicia A. Mcguire;Yuh-Chen Lin;Katherine Margaret Price;G. Bruce Rayner

  • Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

    Michael Hoffmann;Milan Pešić;Korok Chatterjee;Asif I. Khan

  • Spin Hall effect clocking of nanomagnetic logic without a magnetic field

    Debanjan Bhowmik;Long You;Sayeef Salahuddin

Frequent Co-Authors

Chenming Hu
Chenming Hu University of California, Berkeley
Asif Islam Khan
Asif Islam Khan Georgia Institute of Technology
Ramamoorthy Ramesh
Ramamoorthy Ramesh Rice University
Jeffrey Bokor
Jeffrey Bokor University of California, Berkeley
Supriyo Datta
Supriyo Datta Purdue University West Lafayette
Sourabh Khandelwal
Sourabh Khandelwal Macquarie University
Yogesh Singh Chauhan
Yogesh Singh Chauhan Indian Institute of Technology Kanpur
Peter Fischer
Peter Fischer Lawrence Berkeley National Laboratory
Darrell G. Schlom
Darrell G. Schlom Cornell University
Suman Datta
Suman Datta Georgia Institute of Technology

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