Sourabh Khandelwal

Best Publications

• Sustained Sub-60 mV/decade switching via the negative capacitance effect in MoS2 transistors

  Felicia A. Mcguire;Yuh-Chen Lin;Katherine Margaret Price;G. Bruce Rayner

  294
  Citations

• Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

  Asif Islam Khan;Korok Chatterjee;Juan Pablo Duarte;Zhongyuan Lu

  262
  Citations

• A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices

  S. Khandelwal;N. Goyal;T. A. Fjeldly

  253
  Citations

• FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard

  Yogesh Singh Chauhan;Darsen Duane Lu;Vanugopalan Sriramkumar;Sourabh Khandelwal

  209
  Citations

• Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

  S. Khandelwal;Y. S. Chauhan;T. A. Fjeldly

  187
  Citations

• Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part I: Model Description

  Girish Pahwa;Tapas Dutta;Amit Agarwal;Sourabh Khandelwal

  177
  Citations

• A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices

  Sourabh Khandelwal;T.A. Fjeldly

  152
  Citations

• BSIM6: Analog and RF Compact Model for Bulk MOSFET

  Yogesh Singh Chauhan;Sriramkumar Venugopalan;Maria-Anna Chalkiadaki;Muhammed Ahosan Ul Karim

  149
  Citations

• Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

  Sourabh Khandelwal;Chandan Yadav;Shantanu Agnihotri;Yogesh Singh Chauhan

  146
  Citations

• ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model

  Sourabh Khandelwal;Yogesh Singh Chauhan;Tor A. Fjeldly;Sudip Ghosh

  142
  Citations

• BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate Control

  S. Khandelwal;Y. S. Chauhan;D. D. Lu;S. Venugopalan

  122
  Citations

• Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs

  Fetene Mulugeta Yigletu;Sourabh Khandelwal;Tor A. Fjeldly;Benjamin Iniguez

  112
  Citations

• Capacitance Modeling in Dual Field-Plate Power GaN HEMT for Accurate Switching Behavior

  Sheikh Aamir Ahsan;Sudip Ghosh;Khushboo Sharma;Avirup Dasgupta

  111
  Citations

• Compact models of negative-capacitance FinFETs: Lumped and distributed charge models

  Juan P. Duarte;Sourabh Khandelwal;Asif I. Khan;Angada Sachid

  94
  Citations

• ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part-II: Modeling of Charge Trapping

  Sayed Ali Albahrani;Dhawal Mahajan;Jason Hodges;Yogesh Singh Chauhan

  93
  Citations

• BSIM-CMG: Standard FinFET compact model for advanced circuit design

  Juan Pablo Duarte;Sourabh Khandelwal;Aditya Medury;Chenming Hu

  93
  Citations

• Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics

  Sourabh Khandelwal;Juan Pablo Duarte;Asif Islam Khan;Sayeef Salahuddin

  83
  Citations

• Physics-Based Multi-Bias RF Large-Signal GaN HEMT Modeling and Parameter Extraction Flow

  Sheikh Aamir Ahsan;Sudip Ghosh;Sourabh Khandelwal;Yogesh Singh Chauhan

  76
  Citations

• BSIM — Industry standard compact MOSFET models

  Yogesh Singh Chauhan;Sriram Venugopalan;Mohammed A. Karim;Sourabh Khandelwal

  70
  Citations

• Ferroelectric Oscillators and Their Coupled Networks

  Zheng Wang;Sourabh Khandelwal;Asif Islam Khan

  53
  Citations