2020 - IEEE Fellow For contributions to physics-based compact models of semiconductor devices
His scientific interests lie mostly in MOSFET, Electronic engineering, Optoelectronics, Poisson's equation and Transistor. His MOSFET research is multidisciplinary, incorporating perspectives in Capacitance, Condensed matter physics, Computer simulation, Silicon on insulator and Semiconductor device modeling. His Electronic engineering research is multidisciplinary, relying on both Saturation, Silicon, Thin-film transistor and Voltage.
His study looks at the relationship between Optoelectronics and fields such as Electrical engineering, as well as how they intersect with chemical problems. The study incorporates disciplines such as Subthreshold conduction, Computational physics, Drain-induced barrier lowering and Continuity equation in addition to Poisson's equation. As part of the same scientific family, Benjamin Iniguez usually focuses on Computational physics, concentrating on Exact solutions in general relativity and intersecting with Current.
Benjamin Iniguez focuses on MOSFET, Electronic engineering, Optoelectronics, Transistor and Electrical engineering. His research in MOSFET intersects with topics in Threshold voltage, Subthreshold conduction, Silicon on insulator and Poisson's equation. The Electronic engineering study combines topics in areas such as Conformal map, Computational physics, Double gate, Drain current and Quantum tunnelling.
His Optoelectronics study combines topics in areas such as Field-effect transistor, Noise, Charge and Thin-film transistor. His work deals with themes such as Nanocrystalline material, Spice, Density of states and Saturation, which intersect with Thin-film transistor. His study on Transistor also encompasses disciplines like
His primary areas of investigation include Transistor, Optoelectronics, MOSFET, Thin-film transistor and Electronic engineering. His Transistor research incorporates elements of Semiconductor device modeling, Electric potential and Logic gate. His Optoelectronics research incorporates themes from Threshold voltage, Capacitance and Flicker noise.
His MOSFET study incorporates themes from Dimension, Drain current, Conformal map and Condensed matter physics. The concepts of his Thin-film transistor study are interwoven with issues in Noise, Electron mobility and Thermal conduction. His Electronic engineering research integrates issues from Inverter, Quantum tunnelling and Ambipolar diffusion.
Benjamin Iniguez mainly focuses on Transistor, Optoelectronics, Electronic engineering, Thin-film transistor and MOSFET. His studies deal with areas such as Charge, Semiconductor device modeling, Numerical stability and Quantum tunnelling as well as Transistor. His work in Optoelectronics tackles topics such as Capacitance which are related to areas like Logic gate and Derivative.
His Electronic engineering study combines topics from a wide range of disciplines, such as Semiconductor device and Double gate. The various areas that he examines in his Thin-film transistor study include Threshold voltage, Mechanics, Device parameters and Voltage. His MOSFET research includes elements of Drain current and Circuit design.
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Continuous analytic I-V model for surrounding-gate MOSFETs
D. Jimenez;B. Iniguez;J. Sune;L.F. Marsal.
IEEE Electron Device Letters (2004)
Explicit continuous model for long-channel undoped surrounding gate MOSFETs
B. Iniguez;D. Jimenez;J. Roig;H.A. Hamid.
IEEE Transactions on Electron Devices (2005)
Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors
Jean-Michel Sallese;N. Chevillon;C. Lallement;B. Iniguez.
IEEE Transactions on Electron Devices (2011)
Accurate modeling and parameter extraction method for organic TFTs
M. Estrada;A. Cerdeira;J. Puigdollers;L. Reséndiz.
Solid-state Electronics (2005)
Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs
H.A.E. Hamid;B. Iniguez;J.R. Guitart.
IEEE Transactions on Electron Devices (2007)
A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects
M.D. Jacunski;M.S. Shur;A.A. Owusu;T. Ytterdal.
IEEE Transactions on Electron Devices (1999)
Modeling of nanoscale gate-all-around MOSFETs
D. Jimenez;J.J. Saenz;B. Iniguez;J. Sune.
IEEE Electron Device Letters (2004)
Charge transport in organic and polymer thin-film transistors: recent issues
O. Marinov;M.J. Deen;B. Iniguez.
IEE Proceedings - Circuits, Devices and Systems (2005)
Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs
H.A. El Hamid;J.R. Guitart;B. Iniguez.
IEEE Transactions on Electron Devices (2007)
Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs
B. Iniguez;T.A. Fjeldly;A. Lazaro;F. Danneville.
IEEE Transactions on Electron Devices (2006)
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