D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 34 Citations 5,634 351 World Ranking 3893 National Ranking 61

Research.com Recognitions

Awards & Achievements

2020 - IEEE Fellow For contributions to physics-based compact models of semiconductor devices

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Transistor

His scientific interests lie mostly in MOSFET, Electronic engineering, Optoelectronics, Poisson's equation and Transistor. His MOSFET research is multidisciplinary, incorporating perspectives in Capacitance, Condensed matter physics, Computer simulation, Silicon on insulator and Semiconductor device modeling. His Electronic engineering research is multidisciplinary, relying on both Saturation, Silicon, Thin-film transistor and Voltage.

His study looks at the relationship between Optoelectronics and fields such as Electrical engineering, as well as how they intersect with chemical problems. The study incorporates disciplines such as Subthreshold conduction, Computational physics, Drain-induced barrier lowering and Continuity equation in addition to Poisson's equation. As part of the same scientific family, Benjamin Iniguez usually focuses on Computational physics, concentrating on Exact solutions in general relativity and intersecting with Current.

His most cited work include:

  • Continuous analytic I-V model for surrounding-gate MOSFETs (238 citations)
  • Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors (191 citations)
  • Explicit continuous model for long-channel undoped surrounding gate MOSFETs (189 citations)

What are the main themes of his work throughout his whole career to date?

Benjamin Iniguez focuses on MOSFET, Electronic engineering, Optoelectronics, Transistor and Electrical engineering. His research in MOSFET intersects with topics in Threshold voltage, Subthreshold conduction, Silicon on insulator and Poisson's equation. The Electronic engineering study combines topics in areas such as Conformal map, Computational physics, Double gate, Drain current and Quantum tunnelling.

His Optoelectronics study combines topics in areas such as Field-effect transistor, Noise, Charge and Thin-film transistor. His work deals with themes such as Nanocrystalline material, Spice, Density of states and Saturation, which intersect with Thin-film transistor. His study on Transistor also encompasses disciplines like

  • Capacitance together with Condensed matter physics,
  • Logic gate together with Electric potential.

He most often published in these fields:

  • MOSFET (45.56%)
  • Electronic engineering (43.84%)
  • Optoelectronics (40.97%)

What were the highlights of his more recent work (between 2016-2021)?

  • Transistor (29.80%)
  • Optoelectronics (40.97%)
  • MOSFET (45.56%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Transistor, Optoelectronics, MOSFET, Thin-film transistor and Electronic engineering. His Transistor research incorporates elements of Semiconductor device modeling, Electric potential and Logic gate. His Optoelectronics research incorporates themes from Threshold voltage, Capacitance and Flicker noise.

His MOSFET study incorporates themes from Dimension, Drain current, Conformal map and Condensed matter physics. The concepts of his Thin-film transistor study are interwoven with issues in Noise, Electron mobility and Thermal conduction. His Electronic engineering research integrates issues from Inverter, Quantum tunnelling and Ambipolar diffusion.

Between 2016 and 2021, his most popular works were:

  • 2-D Physics-Based Compact DC Modeling of Double-Gate Tunnel-FETs (14 citations)
  • Analytical Model for Schottky Barrier Height and Threshold Voltage of AlGaN/GaN HEMTs With Piezoelectric Effect (12 citations)
  • Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation (9 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Transistor

Benjamin Iniguez mainly focuses on Transistor, Optoelectronics, Electronic engineering, Thin-film transistor and MOSFET. His studies deal with areas such as Charge, Semiconductor device modeling, Numerical stability and Quantum tunnelling as well as Transistor. His work in Optoelectronics tackles topics such as Capacitance which are related to areas like Logic gate and Derivative.

His Electronic engineering study combines topics from a wide range of disciplines, such as Semiconductor device and Double gate. The various areas that he examines in his Thin-film transistor study include Threshold voltage, Mechanics, Device parameters and Voltage. His MOSFET research includes elements of Drain current and Circuit design.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Continuous analytic I-V model for surrounding-gate MOSFETs

D. Jimenez;B. Iniguez;J. Sune;L.F. Marsal.
IEEE Electron Device Letters (2004)

376 Citations

Explicit continuous model for long-channel undoped surrounding gate MOSFETs

B. Iniguez;D. Jimenez;J. Roig;H.A. Hamid.
IEEE Transactions on Electron Devices (2005)

261 Citations

Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

Jean-Michel Sallese;N. Chevillon;C. Lallement;B. Iniguez.
IEEE Transactions on Electron Devices (2011)

253 Citations

Accurate modeling and parameter extraction method for organic TFTs

M. Estrada;A. Cerdeira;J. Puigdollers;L. Reséndiz.
Solid-state Electronics (2005)

195 Citations

Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs

H.A.E. Hamid;B. Iniguez;J.R. Guitart.
IEEE Transactions on Electron Devices (2007)

176 Citations

A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects

M.D. Jacunski;M.S. Shur;A.A. Owusu;T. Ytterdal.
IEEE Transactions on Electron Devices (1999)

168 Citations

Modeling of nanoscale gate-all-around MOSFETs

D. Jimenez;J.J. Saenz;B. Iniguez;J. Sune.
IEEE Electron Device Letters (2004)

149 Citations

Charge transport in organic and polymer thin-film transistors: recent issues

O. Marinov;M.J. Deen;B. Iniguez.
IEE Proceedings - Circuits, Devices and Systems (2005)

146 Citations

Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs

H.A. El Hamid;J.R. Guitart;B. Iniguez.
IEEE Transactions on Electron Devices (2007)

128 Citations

Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs

B. Iniguez;T.A. Fjeldly;A. Lazaro;F. Danneville.
IEEE Transactions on Electron Devices (2006)

126 Citations

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