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Electronics and Electrical Engineering

D-Index
39
Citations
7386
World Ranking
4640
National Ranking
84

Research.com Recognitions

  • 2020 - IEEE Fellow For contributions to physics-based compact models of semiconductor devices

Overview

Benjamin Iniguez is affiliated with Rovira i Virgili University in Spain. Their research primarily focuses on engineering, with a particular emphasis on electrical and electronic engineering. They have contributed extensively to several subfields, including biomedical engineering, materials chemistry, polymers and plastics, and atomic and molecular physics and optics.

Their work covers various main topics, which include:

  • Advancements in Semiconductor Devices and Circuit Design
  • Thin-Film Transistor Technologies
  • Semiconductor Materials and Devices
  • Organic Electronics and Photovoltaics
  • Advanced Memory and Neural Computing
  • Silicon Carbide Semiconductor Technologies
  • Nanowire Synthesis and Applications

Benjamin Iniguez has published notable recent papers such as:

  • The 2021 flexible and printed electronics roadmap, 2021, Flexible and Printed Electronics
  • The Schottky barrier transistor in emerging electronic devices, 2023, Nanotechnology
  • Advances in Compact Modeling of Organic Field-Effect Transistors, 2020, IEEE Journal of the Electron Devices Society
  • Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel, 2022, Applied Physics Letters
  • Effect of Humidity on Properties of Aqueous-Processed Tb-Doped Indium Oxide Thin-Film Transistors, 2022, IEEE Electron Device Letters

Their frequent co-authors include:

  • Paul R. Berger
  • Patrick Fay
  • K. Ishimaru
  • R Todi
  • John M. Dallesasse

Benjamin Iniguez regularly publishes in venues such as:

  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • Solid-State Electronics
  • ECS Meeting Abstracts
  • IEEE Electron Device Letters

Among professional recognitions, Benjamin Iniguez was named an IEEE Fellow in 2020 for contributions to physics-based compact models of semiconductor devices.

Best Publications

  • Continuous analytic I-V model for surrounding-gate MOSFETs

    D. Jimenez;B. Iniguez;J. Sune;L.F. Marsal

  • Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

    Jean-Michel Sallese;N. Chevillon;C. Lallement;B. Iniguez

  • Explicit continuous model for long-channel undoped surrounding gate MOSFETs

    B. Iniguez;D. Jimenez;J. Roig;H.A. Hamid

  • Accurate modeling and parameter extraction method for organic TFTs

    M. Estrada;A. Cerdeira;J. Puigdollers;L. Reséndiz

  • The 2021 flexible and printed electronics roadmap

    Yvan Bonnassieux;Christoph J. Brabec;Yong Cao;Tricia Breen Carmichael

  • Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs

    H.A.E. Hamid;B. Iniguez;J.R. Guitart

  • A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects

    M.D. Jacunski;M.S. Shur;A.A. Owusu;T. Ytterdal

  • Modeling of nanoscale gate-all-around MOSFETs

    D. Jimenez;J.J. Saenz;B. Iniguez;J. Sune

  • Charge transport in organic and polymer thin-film transistors: recent issues

    O. Marinov;M.J. Deen;B. Iniguez

  • A Compact Model for Organic Field-Effect Transistors With Improved Output Asymptotic Behaviors

    Chang Hyun Kim;Alejandra Castro-Carranza;Magali Estrada;Antonio Cerdeira

  • Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs

    H.A. El Hamid;J.R. Guitart;B. Iniguez

  • Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs

    B. Iniguez;T.A. Fjeldly;A. Lazaro;F. Danneville

  • Mobility model for compact device modeling of OTFTs made with different materials

    M. Estrada;I. Mejía;A. Cerdeira;J. Pallares

  • Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems

    D Flandre;S Adriaensen;A Akheyar;A Crahay

  • Explicit Analytical Charge and Capacitance Models of Undoped Double-Gate MOSFETs

    O. Moldovan;D. Jimenez;J.R. Guitart;F.A. Chaves

  • Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs

    Fetene Mulugeta Yigletu;Sourabh Khandelwal;Tor A. Fjeldly;Benjamin Iniguez

  • Compact model for short channel symmetric doped double-gate MOSFETs

    Antonio Cerdeira;Benjamín Iñiguez;Magali Estrada

  • Universal compact model for long- and short-channel Thin-Film Transistors

    Benjamin Iñiguez;Rodrigo Picos;Dmitry Veksler;A. Koudymov

  • A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects

    F. Lime;B. Iniguez;O. Moldovan

  • Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs

    A. Cerdeira;O. Moldovan;B. Iñiguez;M. Estrada

Frequent Co-Authors

Denis Flandre
Denis Flandre Université Catholique de Louvain
Josep Pallarès
Josep Pallarès Rovira i Virgili University
Antonio Manuel Lazaro
Antonio Manuel Lazaro Rovira i Virgili University
Lluis F. Marsal
Lluis F. Marsal Rovira i Virgili University
Jean-Pierre Raskin
Jean-Pierre Raskin Université Catholique de Louvain
Tor A. Fjeldly
Tor A. Fjeldly Norwegian University of Science and Technology
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
M. Jamal Deen
M. Jamal Deen McMaster University
Giuseppe Iannaccone
Giuseppe Iannaccone University of Pisa
Hagen Klauk
Hagen Klauk Max Planck Institute for Solid State Research

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