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Benjamin Iniguez

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 39 4640 4454 84 83 420 7386

Benjamin Iniguez publications per year

The chart shows the history of publications by Benjamin Iniguez between 1993 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Benjamin Iniguez published across 33 years, from 1993 to 2025, averaging 13.9 papers a year. Output peaked at 33 publications in 2011. 33 of the 458 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1993 to 2025. Vertical axis: number of publications, 0 to 33. Peak 33 publications in 2011. 1993: 1 publication 1994: 1 publication 1995: 5 publications 1996: 1 publication 1997: 7 publications 1998: 5 publications 1999: 9 publications 2000: 5 publications 2001: 10 publications 2002: 8 publications 2003: 7 publications 2004: 18 publications 2005: 15 publications 2006: 18 publications 2007: 22 publications 2008: 20 publications 2009: 19 publications 2010: 18 publications 2011: 33 publications 2012: 26 publications 2013: 31 publications 2014: 17 publications 2015: 15 publications 2016: 10 publications 2017: 13 publications 2018: 13 publications 2019: 20 publications 2020: 17 publications 2021: 16 publications 2022: 13 publications 2023: 12 publications 2024: 16 publications 2025: 17 publications
1993 2025

458 publications in total across all disciplines

View publications per year as a table
Benjamin Iniguez: publications per year, 1993 to 2025
Year Publications
1993 1
1994 1
1995 5
1996 1
1997 7
1998 5
1999 9
2000 5
2001 10
2002 8
2003 7
2004 18
2005 15
2006 18
2007 22
2008 20
2009 19
2010 18
2011 33
2012 26
2013 31
2014 17
2015 15
2016 10
2017 13
2018 13
2019 20
2020 17
2021 16
2022 13
2023 12
2024 16
2025 17
Total 458
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Benjamin Iniguez publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Benjamin Iniguez sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 414–433 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 420 publications — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169 420
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Benjamin Iniguez D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Benjamin Iniguez sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 39 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214 39
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 2020 - IEEE Fellow For contributions to physics-based compact models of semiconductor devices

Overview

Benjamin Iniguez is affiliated with Rovira i Virgili University in Spain. Their research primarily focuses on engineering, with a particular emphasis on electrical and electronic engineering. They have contributed extensively to several subfields, including biomedical engineering, materials chemistry, polymers and plastics, and atomic and molecular physics and optics.

Their work covers various main topics, which include:

  • Advancements in Semiconductor Devices and Circuit Design
  • Thin-Film Transistor Technologies
  • Semiconductor Materials and Devices
  • Organic Electronics and Photovoltaics
  • Advanced Memory and Neural Computing
  • Silicon Carbide Semiconductor Technologies
  • Nanowire Synthesis and Applications

Benjamin Iniguez has published notable recent papers such as:

  • The 2021 flexible and printed electronics roadmap, 2021, Flexible and Printed Electronics
  • The Schottky barrier transistor in emerging electronic devices, 2023, Nanotechnology
  • Advances in Compact Modeling of Organic Field-Effect Transistors, 2020, IEEE Journal of the Electron Devices Society
  • Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel, 2022, Applied Physics Letters
  • Effect of Humidity on Properties of Aqueous-Processed Tb-Doped Indium Oxide Thin-Film Transistors, 2022, IEEE Electron Device Letters

Their frequent co-authors include:

  • Paul R. Berger
  • Patrick Fay
  • K. Ishimaru
  • R Todi
  • John M. Dallesasse

Benjamin Iniguez regularly publishes in venues such as:

  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • Solid-State Electronics
  • ECS Meeting Abstracts
  • IEEE Electron Device Letters

Among professional recognitions, Benjamin Iniguez was named an IEEE Fellow in 2020 for contributions to physics-based compact models of semiconductor devices.

Best Publications

  • Continuous analytic I-V model for surrounding-gate MOSFETs

    D. Jimenez;B. Iniguez;J. Sune;L.F. Marsal

  • Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

    Jean-Michel Sallese;N. Chevillon;C. Lallement;B. Iniguez

  • Explicit continuous model for long-channel undoped surrounding gate MOSFETs

    B. Iniguez;D. Jimenez;J. Roig;H.A. Hamid

  • Accurate modeling and parameter extraction method for organic TFTs

    M. Estrada;A. Cerdeira;J. Puigdollers;L. Reséndiz

  • The 2021 flexible and printed electronics roadmap

    Yvan Bonnassieux;Christoph J. Brabec;Yong Cao;Tricia Breen Carmichael

  • Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs

    H.A.E. Hamid;B. Iniguez;J.R. Guitart

  • A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects

    M.D. Jacunski;M.S. Shur;A.A. Owusu;T. Ytterdal

  • Modeling of nanoscale gate-all-around MOSFETs

    D. Jimenez;J.J. Saenz;B. Iniguez;J. Sune

  • Charge transport in organic and polymer thin-film transistors: recent issues

    O. Marinov;M.J. Deen;B. Iniguez

  • A Compact Model for Organic Field-Effect Transistors With Improved Output Asymptotic Behaviors

    Chang Hyun Kim;Alejandra Castro-Carranza;Magali Estrada;Antonio Cerdeira

  • Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs

    H.A. El Hamid;J.R. Guitart;B. Iniguez

  • Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs

    B. Iniguez;T.A. Fjeldly;A. Lazaro;F. Danneville

  • Mobility model for compact device modeling of OTFTs made with different materials

    M. Estrada;I. Mejía;A. Cerdeira;J. Pallares

  • Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems

    D Flandre;S Adriaensen;A Akheyar;A Crahay

  • Explicit Analytical Charge and Capacitance Models of Undoped Double-Gate MOSFETs

    O. Moldovan;D. Jimenez;J.R. Guitart;F.A. Chaves

  • Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs

    Fetene Mulugeta Yigletu;Sourabh Khandelwal;Tor A. Fjeldly;Benjamin Iniguez

  • Compact model for short channel symmetric doped double-gate MOSFETs

    Antonio Cerdeira;Benjamín Iñiguez;Magali Estrada

  • Universal compact model for long- and short-channel Thin-Film Transistors

    Benjamin Iñiguez;Rodrigo Picos;Dmitry Veksler;A. Koudymov

  • A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects

    F. Lime;B. Iniguez;O. Moldovan

  • Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs

    A. Cerdeira;O. Moldovan;B. Iñiguez;M. Estrada

Frequent Co-Authors

Denis Flandre
Denis Flandre Université Catholique de Louvain
Josep Pallarès
Josep Pallarès Rovira i Virgili University
Antonio Manuel Lazaro
Antonio Manuel Lazaro Rovira i Virgili University
Lluis F. Marsal
Lluis F. Marsal Rovira i Virgili University
Jean-Pierre Raskin
Jean-Pierre Raskin Université Catholique de Louvain
Tor A. Fjeldly
Tor A. Fjeldly Norwegian University of Science and Technology
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Sourabh Khandelwal
Sourabh Khandelwal Macquarie University
M. Jamal Deen
M. Jamal Deen McMaster University
Hagen Klauk
Hagen Klauk Max Planck Institute for Solid State Research

External Links

Personal website of Benjamin Iniguez Google Scholar page

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Best Scientists Citing Benjamin Iniguez

Denis Flandre

Denis Flandre

Université Catholique de Louvain

Publications: 86

Jean-Pierre Raskin

Jean-Pierre Raskin

Université Catholique de Louvain

Publications: 46

Gerard Ghibaudo

Gerard Ghibaudo

Grenoble Alpes University

Publications: 36

Mridula Gupta

Mridula Gupta

University of Delhi

Publications: 34

Mansun Chan

Mansun Chan

Hong Kong University of Science and Technology

Publications: 31

Tor A. Fjeldly

Tor A. Fjeldly

Norwegian University of Science and Technology

Publications: 26

Satyabrata Jit

Satyabrata Jit

Indian Institute of Technology BHU

Publications: 23

Yuvraj Singh Negi

Yuvraj Singh Negi

Indian Institute of Technology Roorkee

Publications: 21

Brajesh Kumar Kaushik

Brajesh Kumar Kaushik

Indian Institute of Technology Roorkee

Publications: 21

Francisco Gamiz

Francisco Gamiz

University of Granada

Publications: 18

M. Jamal Deen

M. Jamal Deen

McMaster University

Publications: 16

Jean-Pierre Colinge

Jean-Pierre Colinge

University of California, Davis

Publications: 15

Jong-Ho Lee

Jong-Ho Lee

Soongsil University

Publications: 15

Yuan Taur

Yuan Taur

University of California, San Diego

Publications: 15

Juin J. Liou

Juin J. Liou

Shenzhen University

Publications: 15

Daniela Munteanu

Daniela Munteanu

Aix-Marseille University

Publications: 13

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