World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
7386
World Ranking
4640
National Ranking
84

Benjamin Iniguez publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Benjamin Iniguez sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 420 publications — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Benjamin Iniguez D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Benjamin Iniguez sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2020 - IEEE Fellow For contributions to physics-based compact models of semiconductor devices

Overview

Benjamin Iniguez is affiliated with Rovira i Virgili University in Spain. Their research primarily focuses on engineering, with a particular emphasis on electrical and electronic engineering. They have contributed extensively to several subfields, including biomedical engineering, materials chemistry, polymers and plastics, and atomic and molecular physics and optics.

Their work covers various main topics, which include:

  • Advancements in Semiconductor Devices and Circuit Design
  • Thin-Film Transistor Technologies
  • Semiconductor Materials and Devices
  • Organic Electronics and Photovoltaics
  • Advanced Memory and Neural Computing
  • Silicon Carbide Semiconductor Technologies
  • Nanowire Synthesis and Applications

Benjamin Iniguez has published notable recent papers such as:

  • The 2021 flexible and printed electronics roadmap, 2021, Flexible and Printed Electronics
  • The Schottky barrier transistor in emerging electronic devices, 2023, Nanotechnology
  • Advances in Compact Modeling of Organic Field-Effect Transistors, 2020, IEEE Journal of the Electron Devices Society
  • Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel, 2022, Applied Physics Letters
  • Effect of Humidity on Properties of Aqueous-Processed Tb-Doped Indium Oxide Thin-Film Transistors, 2022, IEEE Electron Device Letters

Their frequent co-authors include:

  • Paul R. Berger
  • Patrick Fay
  • K. Ishimaru
  • R Todi
  • John M. Dallesasse

Benjamin Iniguez regularly publishes in venues such as:

  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • Solid-State Electronics
  • ECS Meeting Abstracts
  • IEEE Electron Device Letters

Among professional recognitions, Benjamin Iniguez was named an IEEE Fellow in 2020 for contributions to physics-based compact models of semiconductor devices.

Best Publications

  • Continuous analytic I-V model for surrounding-gate MOSFETs

    D. Jimenez;B. Iniguez;J. Sune;L.F. Marsal

  • Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

    Jean-Michel Sallese;N. Chevillon;C. Lallement;B. Iniguez

  • Explicit continuous model for long-channel undoped surrounding gate MOSFETs

    B. Iniguez;D. Jimenez;J. Roig;H.A. Hamid

  • Accurate modeling and parameter extraction method for organic TFTs

    M. Estrada;A. Cerdeira;J. Puigdollers;L. Reséndiz

  • The 2021 flexible and printed electronics roadmap

    Yvan Bonnassieux;Christoph J. Brabec;Yong Cao;Tricia Breen Carmichael

  • Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs

    H.A.E. Hamid;B. Iniguez;J.R. Guitart

  • A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects

    M.D. Jacunski;M.S. Shur;A.A. Owusu;T. Ytterdal

  • Modeling of nanoscale gate-all-around MOSFETs

    D. Jimenez;J.J. Saenz;B. Iniguez;J. Sune

  • Charge transport in organic and polymer thin-film transistors: recent issues

    O. Marinov;M.J. Deen;B. Iniguez

  • A Compact Model for Organic Field-Effect Transistors With Improved Output Asymptotic Behaviors

    Chang Hyun Kim;Alejandra Castro-Carranza;Magali Estrada;Antonio Cerdeira

  • Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs

    H.A. El Hamid;J.R. Guitart;B. Iniguez

  • Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs

    B. Iniguez;T.A. Fjeldly;A. Lazaro;F. Danneville

  • Mobility model for compact device modeling of OTFTs made with different materials

    M. Estrada;I. Mejía;A. Cerdeira;J. Pallares

  • Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems

    D Flandre;S Adriaensen;A Akheyar;A Crahay

  • Explicit Analytical Charge and Capacitance Models of Undoped Double-Gate MOSFETs

    O. Moldovan;D. Jimenez;J.R. Guitart;F.A. Chaves

  • Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs

    Fetene Mulugeta Yigletu;Sourabh Khandelwal;Tor A. Fjeldly;Benjamin Iniguez

  • Compact model for short channel symmetric doped double-gate MOSFETs

    Antonio Cerdeira;Benjamín Iñiguez;Magali Estrada

  • Universal compact model for long- and short-channel Thin-Film Transistors

    Benjamin Iñiguez;Rodrigo Picos;Dmitry Veksler;A. Koudymov

  • A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects

    F. Lime;B. Iniguez;O. Moldovan

  • Modeling of potentials and threshold voltage for symmetric doped double-gate MOSFETs

    A. Cerdeira;O. Moldovan;B. Iñiguez;M. Estrada

Frequent Co-Authors

Denis Flandre
Denis Flandre Université Catholique de Louvain
Josep Pallarès
Josep Pallarès Rovira i Virgili University
Antonio Manuel Lazaro
Antonio Manuel Lazaro Rovira i Virgili University
Lluis F. Marsal
Lluis F. Marsal Rovira i Virgili University
Jean-Pierre Raskin
Jean-Pierre Raskin Université Catholique de Louvain
Tor A. Fjeldly
Tor A. Fjeldly Norwegian University of Science and Technology
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Sourabh Khandelwal
Sourabh Khandelwal Macquarie University
M. Jamal Deen
M. Jamal Deen McMaster University
Hagen Klauk
Hagen Klauk Max Planck Institute for Solid State Research

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