World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
55
Citations
12809
World Ranking
2154
National Ranking
368

Mansun Chan publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Mansun Chan sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 752 publications — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Mansun Chan D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Mansun Chan sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 55 D-Index — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Mansun Chan is affiliated with the Hong Kong University of Science and Technology in China. Their research spans several areas within engineering and materials science, focusing particularly on semiconductor materials and devices, advanced memory and neural computing, and thin-film transistor technologies.

Their work engages deeply with the following main and subfields of study:

  • Engineering
  • Materials Science
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Biomedical Engineering
  • Electronic, Optical and Magnetic Materials
  • Cognitive Neuroscience

Key research topics explored by Mansun Chan include:

  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • Thin-Film Transistor Technologies
  • Ferroelectric and Negative Capacitance Devices
  • 2D Materials and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Sensor and Energy Harvesting Materials

Frequent co-authors in their publications reveal collaboration with several researchers, including:

  • Zichao Ma
  • Shengdong Zhang
  • Changjian Zhou
  • Lining Zhang
  • Jiye Li

The venues where Mansun Chan's research is often published include:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • Advanced Electronic Materials
  • Science Advances

Representative recent papers by Mansun Chan are:

  • Computational event-driven vision sensors for in-sensor spiking neural networks, 2023, Nature Electronics
  • Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces, 2020, npj 2D Materials and Applications
  • Hybrid memristor-CMOS neurons for in-situ learning in fully hardware memristive spiking neural networks, 2021, Science Bulletin
  • Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope, 2021, Science Advances
  • Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator, 2023, ACS Applied Materials & Interfaces

Best Publications

  • Highly aligned graphene/polymer nanocomposites with excellent dielectric properties for high-performance electromagnetic interference shielding.

    Nariman Yousefi;Xinying Sun;Xiuyi Lin;Xi Shen

  • Modeling of Mutual Coupling Between Planar Inductors in Wireless Power Applications

    Salahuddin Raju;Rongxiang Wu;Mansun Chan;C. Patrick Yue

  • Development of Single-Transistor-Control LDO Based on Flipped Voltage Follower for SoC

    Tsz Yin Man;Ka Nang Leung;Chi Yat Leung;P.K.T. Mok

  • A system-on-chip EPC Gen-2 passive UHF RFID tag with embedded temperature sensor

    Jun Yin;Jun Yi;Man Kay Law;Yunxiao Ling

  • A High Slew-Rate Push–Pull Output Amplifier for Low-Quiescent Current Low-Dropout Regulators With Transient-Response Improvement

    Tsz Yin Man;P.K.T. Mok;Mansun Chan

  • A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation

    Yuhua Cheng;Min-Chie Jeng;Zhihong Liu;Jianhui Huang

  • Self-Driven Metal–Semiconductor–Metal WSe2 Photodetector with Asymmetric Contact Geometries

    Changjian Zhou;Salahuddin Raju;Bin Li;Man Sun Chan

  • Carrier type control of WSe2 field-effect transistors by thickness modulation and MoO3 layer doping

    Changjian Zhou;Yuda Zhao;Salahuddin Raju;Yi Wang

  • A Junctionless Nanowire Transistor With a Dual-Material Gate

    Haijun Lou;Lining Zhang;Yunxi Zhu;Xinnan Lin

  • An integrated CMOS current-sensing circuit for low-Voltage current-mode buck regulator

    Chi Yat Leung;P.K.T. Mok;Ka Nang Leung;M. Chan

  • Super thin-film transistor with SOI CMOS performance formed by a novel grain enhancement method

    H. Wang;M. Chan;S. Jagar;V.M.C. Poon

  • Analysis of Geometry-Dependent Parasitics in Multifin Double-Gate FinFETs

    Wen Wu;Mansun Chan

  • A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation

    Mansun Chan;K.Y. Hui;Chenming Hu;P.K. Ko

  • Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

    Changjian Zhou;Changjian Zhou;Xinsheng Wang;Salahuddin Raju;Ziyuan Lin

  • Threshold voltage model for deep-submicrometer fully depleted SOI MOSFET's

    S.R. Banna;P.C.H. Chan;P.K. Ko;C.T. Nguyen

  • Area-efficient CMOS charge pumps for LCD drivers

    TianRui Ying;Wing-Hung Ki;Mansun Chan

  • 3-Dimensional Integration for Interconnect Reduction in for Nano-CMOS Technologies

    Mansun Chan;Shengdong Zhang;Xinnan Lin;Xusheng Wu

  • Vertically Stacked Silicon Nanowire Transistors Fabricated by Inductive Plasma Etching and Stress-Limited Oxidation

    R.M.Y. Ng;Tao Wang;Feng Liu;Xuan Zuo

  • Single grain thin-film-transistor (TFT) with SOI CMOS performance formed by metal-induced-lateral-crystallization

    S. Jagar;M. Chan;M.C. Poon;Ming Qin

  • Hot-carrier effects in thin-film fully depleted SOI MOSFET's

    Z.J. Ma;H.J. Wann;M. Chan;J.C. King

Frequent Co-Authors

Chenming Hu
Chenming Hu University of California, Berkeley
Shengdong Zhang
Shengdong Zhang Peking University
Yangyuan Wang
Yangyuan Wang Peking University
Ali M. Niknejad
Ali M. Niknejad University of California, Berkeley
Philip K. T. Mok
Philip K. T. Mok Hong Kong University of Science and Technology
Ru Huang
Ru Huang Peking University
Wing-Hung Ki
Wing-Hung Ki Hong Kong University of Science and Technology
Hei Wong
Hei Wong City University of Hong Kong
Cary Y. Yang
Cary Y. Yang Santa Clara University
Sven Ingebrandt
Sven Ingebrandt RWTH Aachen University

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