D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 31 Citations 4,292 300 World Ranking 4618 National Ranking 88

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Integrated circuit
  • Quantum mechanics

Ya-Chin King mainly investigates Electrical engineering, Resistive random-access memory, Optoelectronics, Non-volatile memory and CMOS. His work on Electrical engineering is being expanded to include thematically relevant topics such as Programmable logic device. His Resistive random-access memory research includes themes of Memory management, Noise, Electronic engineering, Data retention and Efficient energy use.

His Optoelectronics research is multidisciplinary, incorporating perspectives in Layer and Transistor, Gate oxide, MOSFET. His Non-volatile memory research is multidisciplinary, relying on both Artificial neural network, Sense amplifier, Enhanced Data Rates for GSM Evolution and Low-power electronics. His CMOS study combines topics in areas such as Low voltage, Voltage, Electronic circuit, Access time and Resistive touchscreen.

His most cited work include:

  • Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/ (216 citations)
  • A Contact-Resistive Random-Access-Memory-Based True Random Number Generator (92 citations)
  • Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric (86 citations)

What are the main themes of his work throughout his whole career to date?

Ya-Chin King mainly focuses on Optoelectronics, CMOS, Electronic engineering, Electrical engineering and Non-volatile memory. His research integrates issues of Low voltage, Voltage, MOSFET, Transistor and Gate dielectric in his study of Optoelectronics. Ya-Chin King has researched Transistor in several fields, including Thin-film transistor and Static random-access memory.

His CMOS research includes themes of Metal gate, Image sensor, Dynamic range, Resistive random-access memory and Logic gate. The Electronic engineering study combines topics in areas such as Electronic circuit, Flash memory and Reliability. His work deals with themes such as Sense amplifier and Non-volatile random-access memory, which intersect with Non-volatile memory.

He most often published in these fields:

  • Optoelectronics (50.35%)
  • CMOS (36.11%)
  • Electronic engineering (30.90%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (50.35%)
  • Resistive random-access memory (20.83%)
  • CMOS (36.11%)

In recent papers he was focusing on the following fields of study:

His main research concerns Optoelectronics, Resistive random-access memory, CMOS, Electronic engineering and Non-volatile memory. His Optoelectronics research includes elements of Plasma, Gate dielectric, Logic gate and Reliability. Resistive random-access memory is a subfield of Voltage that Ya-Chin King tackles.

Electrical engineering covers Ya-Chin King research in CMOS. His studies deal with areas such as Embedded system and Integrated circuit as well as Electronic engineering. Ya-Chin King has included themes like Random access memory, Data retention, Flip-flop and Capacitor in his Non-volatile memory study.

Between 2015 and 2021, his most popular works were:

  • 24.1 A 1Mb Multibit ReRAM Computing-In-Memory Macro with 14.6ns Parallel MAC Computing Time for CNN Based AI Edge Processors (83 citations)
  • A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors (74 citations)
  • 4.7 A 65nm ReRAM-enabled nonvolatile processor with 6× reduction in restore time and 4× higher clock frequency using adaptive data retention and self-write-termination nonvolatile logic (53 citations)

In his most recent research, the most cited papers focused on:

  • Integrated circuit
  • Electrical engineering
  • Transistor

His primary areas of investigation include Resistive random-access memory, Non-volatile memory, Electronic engineering, CMOS and Transistor. His Resistive random-access memory study incorporates themes from Sense amplifier, Computer hardware, Access time, Efficient energy use and Vacancy defect. His Electronic engineering research integrates issues from Network model and Embedded system.

His CMOS study combines topics from a wide range of disciplines, such as Electronic circuit, Plasma and Reliability. Ya-Chin King interconnects Optoelectronics and Wafer in the investigation of issues within Plasma. Within one scientific family, Ya-Chin King focuses on topics pertaining to Static random-access memory under Transistor, and may sometimes address concerns connected to Resistive switching.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/

Ya-Chin King;Tsu-Jae King;Chenming Hu.
IEEE Transactions on Electron Devices (2001)

321 Citations

Electromagnetic Energy Harvesting Circuit With Feedforward and Feedback DC–DC PWM Boost Converter for Vibration Power Generator System

Xinping Cao;Wen-Jen Chiang;Ya-Chin King;Yi-Kuen Lee.
IEEE Transactions on Power Electronics (2007)

256 Citations

24.1 A 1Mb Multibit ReRAM Computing-In-Memory Macro with 14.6ns Parallel MAC Computing Time for CNN Based AI Edge Processors

Cheng-Xin Xue;Wei-Hao Chen;Je-Syu Liu;Jia-Fang Li.
international solid-state circuits conference (2019)

185 Citations

A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors

Wei-Hao Chen;Kai-Xiang Li;Wei-Yu Lin;Kuo-Hsiang Hsu.
international solid-state circuits conference (2018)

182 Citations

High-K metal gate contact RRAM (CRRAM) in pure 28nm CMOS logic process

Wen Chao Shen;Chin Yu Mei;Y.-D. Chih;Shyh-Shyuan Sheu.
international electron devices meeting (2012)

135 Citations

Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric

Donggun Park;Ya-chin King;Qiang Lu;Tsu-Jae King.
IEEE Electron Device Letters (1998)

133 Citations

A Contact-Resistive Random-Access-Memory-Based True Random Number Generator

Chien-Yuan Huang;Wen Chao Shen;Yuan-Heng Tseng;Ya-Chin King.
IEEE Electron Device Letters (2012)

125 Citations

19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme

Meng-Fan Chang;Jui-Jen Wu;Tun-Fei Chien;Yen-Chen Liu.
international solid-state circuits conference (2014)

117 Citations

A New High-Density and Ultrasmall-Cell-Size Contact RRAM (CR-RAM) With Fully CMOS-Logic-Compatible Technology and Circuits

Yuan Heng Tseng;Chia-En Huang;C Kuo;Y Chih.
IEEE Transactions on Electron Devices (2011)

116 Citations

A New CMOS Logic Anti-Fuse Cell with Programmable Contact

Chia-En Huang;Hsin-Ming Chen;May-Be Chen;Ya-Chin King.
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop (2007)

106 Citations

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