World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
5292
World Ranking
6232
National Ranking
111

Ya-Chin King publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ya-Chin King sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 307 publications — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ya-Chin King D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ya-Chin King sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 32 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Ya-Chin King is affiliated with National Tsing Hua University in Taiwan. Their research primarily falls within the field of Engineering, with a focus on Electrical and Electronic Engineering as the main subfield alongside contributions to Surfaces, Coatings and Films, Bioengineering, Materials Chemistry, and Polymers and Plastics.

Their work covers several core topics including semiconductor materials and devices, advanced memory and neural computing, ferroelectric and negative capacitance devices, advancements in photolithography techniques, advancements in semiconductor devices and circuit design, CCD and CMOS imaging sensors, and integrated circuits and semiconductor failure analysis.

Ya-Chin King's research has been published frequently in venues such as:

  • IEEE Transactions on Electron Devices
  • Nanoscale Research Letters
  • Japanese Journal of Applied Physics
  • Discover Nano
  • IEEE Journal of the Electron Devices Society

They have collaborated extensively with several coauthors throughout their career, notably:

  • Chrong Jung Lin
  • Jiaw-Ren Shih
  • Yue-Der Chih
  • Jonathan Chang
  • Burn J. Lin

Among Ya-Chin King's recent publications are the following papers:

  • Complementary Metal-Oxide-Semiconductor Compatible 2D Layered Film-Based Gas Sensors by Floating-Gate Coupling Effect, 2021, Advanced Functional Materials
  • On-Wafer FinFET-Based EUV/eBeam Detector Arrays for Advanced Lithography Processes, 2020, IEEE Transactions on Electron Devices
  • Promising Engineering Approaches for Improving the Reliability of HfZrOx 2-D and 3-D Ferroelectric Random Access Memories, 2020, IEEE Transactions on Electron Devices
  • Embedded Micro-detectors for EUV Exposure Control in FinFET CMOS Technology, 2022, Nanoscale Research Letters
  • Multifunctional Ion-Sensitive Floating Gate Fin Field-Effect Transistor with Three-Dimensional Nanoseaweed Structure by Glancing Angle Deposition Technology, 2021, Small

Best Publications

  • Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/

    Ya-Chin King;Tsu-Jae King;Chenming Hu

  • A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors

    Wei-Hao Chen;Kai-Xiang Li;Wei-Yu Lin;Kuo-Hsiang Hsu

  • 24.1 A 1Mb Multibit ReRAM Computing-In-Memory Macro with 14.6ns Parallel MAC Computing Time for CNN Based AI Edge Processors

    Cheng-Xin Xue;Wei-Hao Chen;Je-Syu Liu;Jia-Fang Li

  • Electromagnetic Energy Harvesting Circuit With Feedforward and Feedback DC–DC PWM Boost Converter for Vibration Power Generator System

    Xinping Cao;Wen-Jen Chiang;Ya-Chin King;Yi-Kuen Lee

  • CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors

    Wei-Hao Chen;Chunmeng Dou;Kai-Xiang Li;Wei-Yu Lin

  • A Contact-Resistive Random-Access-Memory-Based True Random Number Generator

    Chien-Yuan Huang;Wen Chao Shen;Yuan-Heng Tseng;Ya-Chin King

  • 19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme

    Meng-Fan Chang;Jui-Jen Wu;Tun-Fei Chien;Yen-Chen Liu

  • High-K metal gate contact RRAM (CRRAM) in pure 28nm CMOS logic process

    Wen Chao Shen;Chin Yu Mei;Y.-D. Chih;Shyh-Shyuan Sheu

  • Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric

    Donggun Park;Ya-chin King;Qiang Lu;Tsu-Jae King

  • A New High-Density and Ultrasmall-Cell-Size Contact RRAM (CR-RAM) With Fully CMOS-Logic-Compatible Technology and Circuits

    Yuan Heng Tseng;Chia-En Huang;C Kuo;Y Chih

  • An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Amplifier for Small-Cell-Current Nonvolatile Memory

    Meng-Fan Chang;Shin-Jang Shen;Chia-Chi Liu;Che-Wei Wu

  • A New CMOS Logic Anti-Fuse Cell with Programmable Contact

    Chia-En Huang;Hsin-Ming Chen;May-Be Chen;Ya-Chin King

  • Embedded 1-Mb ReRAM-Based Computing-in- Memory Macro With Multibit Input and Weight for CNN-Based AI Edge Processors

    Cheng-Xin Xue;Ting-Wei Chang;Tung-Cheng Chang;Hui-Yao Kao

  • Quantum effect in oxide thickness determination from capacitance measurement

    K. Yang;Ya-Chin King;Chenming Hu

  • Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors

    Shou-En Liu;Ming-Jiue Yu;Chang-Yu Lin;Geng-Tai Ho

  • A novel logarithmic response CMOS image sensor with high output voltage swing and in-pixel fixed pattern noise reduction

    Liang-Wei Lai;Cheng-Hsiao Lai;Ya-Chin King

  • A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time

    Meng-Fan Chang;Che-Wei Wu;Chia-Cheng Kuo;Shin-Jang Shen

  • 4.7 A 65nm ReRAM-enabled nonvolatile processor with 6× reduction in restore time and 4× higher clock frequency using adaptive data retention and self-write-termination nonvolatile logic

    Yongpan Liu;Zhibo Wang;Albert Lee;Fang Su

  • A High-Speed BE-SONOS NAND Flash Utilizing the Field-Enhancement Effect of FinFET

    Tzu-Hsuan Hsu;Hang-Ting Lue;Erh-Kun Lai;Jung-Yu Hsieh

  • Ultra high density 3D via RRAM in pure 28nm CMOS process

    Min-Che Hsieh;Yu-Cheng Liao;Yung-Wen Chin;Chen-Hsin Lien

  • 7.4 A 256b-wordlength ReRAM-based TCAM with 1ns search-time and 14× improvement in wordlength-energyefficiency-density product using 2.5T1R cell

    Chien-Chen Lin;Jui-Yu Hung;Wen-Zhang Lin;Chieh-Pu Lo

  • Charge-Trap Memory Device Fabricated by Oxidation of

    Ya-Chin King;Tsu-Jae King;Chenming Hu

Frequent Co-Authors

Meng-Fan Chang
Meng-Fan Chang National Tsing Hua University
Chenming Hu
Chenming Hu University of California, Berkeley
Ming-Jinn Tsai
Ming-Jinn Tsai Industrial Technology Research Institute
Chih-Yuan Lu
Chih-Yuan Lu Macronix International (Taiwan)
Tsu-Jae King
Tsu-Jae King University of California, Berkeley
Hang-Ting Lue
Hang-Ting Lue Macronix International (Taiwan)
Yao-Wen Chang
Yao-Wen Chang National Taiwan University
Frederick T. Chen
Frederick T. Chen ITRI International
Yu-Lun Chueh
Yu-Lun Chueh National Tsing Hua University
Shu-Fen Hu
Shu-Fen Hu National Taiwan Normal University

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