His main research concerns Resistive random-access memory, Optoelectronics, Electronic engineering, Neuromorphic engineering and Nanotechnology. His research on Resistive random-access memory concerns the broader Electrical engineering. Bin Gao has researched Optoelectronics in several fields, including Layer and Electrical conductor.
His work on Integrated circuit design as part of general Electronic engineering research is frequently linked to Physics based, bridging the gap between disciplines. His work carried out in the field of Neuromorphic engineering brings together such families of science as Computation and Modulation. In his research, Oxygen vacancy, Reliability and Thin film is intimately related to Resistive switching memory, which falls under the overarching field of Nanotechnology.
His scientific interests lie mostly in Resistive random-access memory, Electronic engineering, Optoelectronics, Neuromorphic engineering and Electrical engineering. His Resistive random-access memory study results in a more complete grasp of Voltage. His Electronic engineering research includes themes of Energy consumption, Non-volatile memory, Hafnium compounds and Computer data storage.
His Optoelectronics research incorporates themes from Layer, Resistive touchscreen and Oxygen ions. As part of his studies on Neuromorphic engineering, Bin Gao often connects relevant areas like Memristor. Bin Gao specializes in Resistive switching, namely Resistive switching memory.
Bin Gao focuses on Resistive random-access memory, Electronic engineering, Artificial neural network, Memristor and Neuromorphic engineering. Bin Gao undertakes multidisciplinary studies into Resistive random-access memory and Hardware security module in his work. His Electronic engineering research includes elements of Multiplication, Efficient energy use, Chip and Reliability.
His Artificial neural network study combines topics in areas such as Electronic circuit, Computer hardware and Linearity. His biological study spans a wide range of topics, including Optoelectronics, Density functional theory and Crossbar switch. His Optoelectronics research includes themes of Layer, Transistor, Conductance and Resistive touchscreen.
His primary areas of study are Electronic engineering, Artificial neural network, Memristor, Neuromorphic engineering and Resistive random-access memory. Bin Gao has researched Electronic engineering in several fields, including Reliability, Efficient energy use, Computer data storage and Analog computer. Bin Gao works mostly in the field of Memristor, limiting it down to topics relating to Signal processing and, in certain cases, Electrical efficiency, as a part of the same area of interest.
His Neuromorphic engineering research focuses on subjects like Crossbar switch, which are linked to Optoelectronics, Nanodot, Thin film and Lithography. The Silicon research Bin Gao does as part of his general Optoelectronics study is frequently linked to other disciplines of science, such as Bit error rate, therefore creating a link between diverse domains of science. Bin Gao integrates Resistive random-access memory and Acceleration in his studies.
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Fully hardware-implemented memristor convolutional neural network
Peng Yao;Huaqiang Wu;Bin Gao;Jianshi Tang.
Face classification using electronic synapses
Peng Yao;Huaqiang Wu;Bin Gao;Sukru Burc Eryilmaz.
Nature Communications (2017)
A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation
Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu.
Advanced Materials (2013)
Determination of the entropy changes in the compounds with a first-order magnetic transition
G. J. Liu;J. R. Sun;J. Shen;B. Gao.
Applied Physics Letters (2007)
HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.
Shimeng Yu;Hong Yu Chen;Bin Gao;Jinfeng Kang.
ACS Nano (2013)
HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector
Hong-Yu Chen;Shimeng Yu;Bin Gao;Peng Huang.
international electron devices meeting (2012)
Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges.
Jianshi Tang;Fang Yuan;Xinke Shen;Zhongrui Wang.
Advanced Materials (2019)
Ionic doping effect in ZrO2 resistive switching memory
Haowei Zhang;Bin Gao;Bing Sun;Guopeng Chen.
Applied Physics Letters (2010)
Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory
Bin Gao;Bing Sun;Haowei Zhang;Lifeng Liu.
IEEE Electron Device Letters (2009)
Understanding memristive switching via in situ characterization and device modeling.
Wen Sun;Wen Sun;Wen Sun;Bin Gao;Miaofang Chi;Qiangfei Xia.
Nature Communications (2019)
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