World's Best Scientists 2026 revealed!
Frederick T. Chen

Frederick T. Chen

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 37 5021 4819 1744 1629 152 9652

Frederick T. Chen publications per year

The chart shows the history of publications by Frederick T. Chen between 1998 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Frederick T. Chen published across 28 years, from 1998 to 2025, averaging 6.1 papers a year. Output peaked at 36 publications in 2012. 5 of the 170 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1998 to 2025. Vertical axis: number of publications, 0 to 36. Peak 36 publications in 2012. 1998: 2 publications 1999: 0 publications 2000: 1 publication 2001: 0 publications 2002: 1 publication 2003: 1 publication 2004: 1 publication 2005: 0 publications 2006: 2 publications 2007: 4 publications 2008: 8 publications 2009: 16 publications 2010: 19 publications 2011: 23 publications 2012: 36 publications 2013: 19 publications 2014: 13 publications 2015: 6 publications 2016: 1 publication 2017: 1 publication 2018: 1 publication 2019: 0 publications 2020: 0 publications 2021: 0 publications 2022: 4 publications 2023: 6 publications 2024: 0 publications 2025: 5 publications
1998 2025

170 publications in total across all disciplines

View publications per year as a table
Frederick T. Chen: publications per year, 1998 to 2025
Year Publications
1998 2
1999 0
2000 1
2001 0
2002 1
2003 1
2004 1
2005 0
2006 2
2007 4
2008 8
2009 16
2010 19
2011 23
2012 36
2013 19
2014 13
2015 6
2016 1
2017 1
2018 1
2019 0
2020 0
2021 0
2022 4
2023 6
2024 0
2025 5
Total 170
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Frederick T. Chen publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Frederick T. Chen sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 134–153 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 152 publications — 15th percentile

15% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355 152
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Frederick T. Chen D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Frederick T. Chen sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 37 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220 37
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Frederick T. Chen is affiliated with ITRI International in the United States and has contributed extensively to the field of Medicine, with a focus on subfields including Hematology, Genetics, Pulmonary and Respiratory Medicine, Immunology, and Emergency Medical Services. Their research covers a range of topics primarily related to blood and its disorders, myeloproliferative neoplasms, and issues in global health and medical careers.

The main topics addressed in Chen's work include:

  • Blood groups and transfusion
  • Blood disorders and treatments
  • Myeloproliferative Neoplasms: Diagnosis and Treatment
  • Hemoglobinopathies and Related Disorders
  • Platelet Disorders and Treatments
  • Global Health Workforce Issues
  • Diversity and Career in Medicine

Frederick T. Chen has collaborated frequently with several coauthors, including Bruno Fattizzo, María Eva Mingot-Castellano, Tomás José González-López, Wilma Barcellini, and Marc Michel, each having coauthored six or five papers alongside Chen.

Chen's recent publications illustrate the breadth of their research interests and include:

  • Ruxolitinib Versus Best Available Therapy for Polycythemia Vera Intolerant or Resistant to Hydroxycarbamide in a Randomized Trial, 2023, Journal of Clinical Oncology
  • Evans syndrome in adults: an observational multicenter study, 2021, Blood Advances
  • Reducing demand for overexploited wildlife products: Lessons from systematic reviews from outside conservation science, 2022, Conservation Science and Practice
  • Rural Residency Training as a Strategy to Address Rural Health Disparities: Barriers to Expansion and Possible Solutions, 2021, Journal of Graduate Medical Education
  • Homeostatic Cytokines Drive Epigenetic Reprogramming of Activated T Cells into a "Naive-Memory" Phenotype, 2020, iScience

The venues in which Chen has published frequently include Blood, PubMed, Journal of Graduate Medical Education, JAMA, and Journal of Hepatology. Blood is notably the most common publication venue, with four papers published there.

Best Publications

  • Metal–Oxide RRAM

    H-S P. Wong;Heng-Yuan Lee;Shimeng Yu;Yu-Sheng Chen

  • Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

    H.Y. Lee;P.S. Chen;T.Y. Wu;Y.S. Chen

  • Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

    Wen-Yuan Chang;Yen-Chao Lai;Tai-Bor Wu;Sea-Fue Wang

  • A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

    Shyh-Shyuan Sheu;Meng-Fan Chang;Ku-Feng Lin;Che-Wei Wu

  • Evidence and solution of over-RESET problem for HfO X based resistive memory with sub-ns switching speed and high endurance

    H. Y. Lee;Y. S. Chen;P. S. Chen;P. Y. Gu

  • Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity

    Y. S. Chen;H. Y. Lee;P. S. Chen;P. Y. Gu

  • RRAM Defect Modeling and Failure Analysis Based on March Test and a Novel Squeeze-Search Scheme

    Ching Yi Chen;Hsiu Chuan Shih;Cheng Wen Wu;Chih He Lin

  • Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells

    Chang-Po Hsiung;Hsin-Wei Liao;Jon-Yiew Gan;Tai-Bo Wu

  • Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

    Wen-Yuan Chang;Kai-Jung Cheng;Jui-Ming Tsai;Hung-Jen Chen

  • A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme

    Shyh-Shyuan Sheu;Pei-Chia Chiang;Wen-Pin Lin;Heng-Yuan Lee

  • An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance

    Yu-Sheng Chen;Heng-Yuan Lee;Pang-Shiu Chen;Tai-Yuan Wu

  • Low Programming Current Phase Change Memory Cell with Double GST Thermally Confined Structure

    Der-Sheng Chao;Hong-Hui Hsu;Ming-Jung Chen;Yi-Chan Chen

  • Fast-Write Resistive RAM (RRAM) for Embedded Applications

    Shyh-Shyuan Sheu;Kuo-Hsing Cheng;Meng-Fan Chang;Pei-Chia Chiang

  • A low store energy, low VDDmin, nonvolatile 8T2R SRAM with 3D stacked RRAM devices for low power mobile applications

    Pi-Feng Chiu;Meng-Fan Chang;Shyh-Shyuan Sheu;Ku-Feng Lin

  • A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes

    Meng-Fan Chang;Shyh-Shyuan Sheu;Ku-Feng Lin;Che-Wei Wu

  • Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

    Heng Yuan Lee;Pang Shiu Chen;Tai Yuan Wu;Ching Chiun Wang

  • Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface.

    Sheikh Ziaur Rahaman;Siddheswar Maikap;Ta-Chang Tien;Heng-Yuan Lee

  • Resistive memory array and cell

    Chen Frederick T

  • $\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

    Heng Yuan Lee;Pang-Shiu Chen;Tai-Yuan Wu;Yu Sheng Chen

  • Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot

    Yu-Sheng Chen;Heng-Yuan Lee;Pang-Shiu Chen;Wen-Hsing Liu

  • Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition

    Ching-Shiang Peng;Wen-Yuan Chang;Yi-Hsuan Lee;Ming-Ho Lin

Frequent Co-Authors

Ming-Jinn Tsai
Ming-Jinn Tsai Industrial Technology Research Institute
Meng-Fan Chang
Meng-Fan Chang National Tsing Hua University
Chao-Sung Lai
Chao-Sung Lai National Yang Ming Chiao Tung University
Ya-Chin King
Ya-Chin King National Tsing Hua University
Ru Huang
Ru Huang Peking University
Shimeng Yu
Shimeng Yu Georgia Institute of Technology
Writam Banerjee
Writam Banerjee GlobalFoundries (United States)
Samit K. Ray
Samit K. Ray Indian Institute of Technology Kharagpur
Hyoyoung Lee
Hyoyoung Lee Sungkyunkwan University
Sea-Fue Wang
Sea-Fue Wang National Taipei University of Technology

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