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Best Scientists - Electronics and Electrical Engineering
Stefan Slesazeck

Stefan Slesazeck

Namlab gGmbH
Germany

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name Citations Publications World Ranking National Ranking

Electronics and Electrical Engineering D-index 38 Citations 6,164 189 World Ranking 3119 National Ranking 102

Overview

What is he best known for?

The fields of study he is best known for:

Quantum mechanics
Semiconductor
Transistor

His main research concerns Optoelectronics, Ferroelectricity, Field-effect transistor, Electrical engineering and Transistor. Stefan Slesazeck combines subjects such as Thin film and Capacitor with his study of Ferroelectricity. His studies deal with areas such as Nanotechnology, Non-volatile memory, Coercivity, Threshold voltage and CMOS as well as Field-effect transistor.

His study in CMOS is interdisciplinary in nature, drawing from both Neuromorphic engineering, Electronic circuit and Vacancy defect. His work in the fields of Electrical engineering, such as Logic gate and Integrated injection logic, overlaps with other areas such as Tin. His Transistor study deals with Dram intersecting with Transient, Nanoelectronics, MOSFET and Capacitance.

His most cited work include:

Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors (245 citations)
Reconfigurable Silicon Nanowire Transistors (209 citations)
Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 (128 citations)

What are the main themes of his work throughout his whole career to date?

Stefan Slesazeck focuses on Optoelectronics, Ferroelectricity, Transistor, Capacitor and Field-effect transistor. His Optoelectronics research is multidisciplinary, relying on both Electrical engineering, Voltage and Electrode. He has researched Ferroelectricity in several fields, including Non-volatile memory and Negative impedance converter.

His Transistor research incorporates themes from Electronic circuit, Neuromorphic engineering, Electronic engineering, Logic gate and Hafnium oxide. His work on Ferroelectric RAM as part of general Capacitor research is often related to Polarization, thus linking different fields of science. Field-effect transistor and Threshold voltage are commonly linked in his work.

He most often published in these fields:

Optoelectronics (57.51%)
Ferroelectricity (48.19%)
Transistor (30.57%)

What were the highlights of his more recent work (between 2019-2021)?

Ferroelectricity (48.19%)
Transistor (30.57%)
Optoelectronics (57.51%)

In recent papers he was focusing on the following fields of study:

Ferroelectricity, Transistor, Optoelectronics, Engineering physics and Non-volatile memory are his primary areas of study. The concepts of his Ferroelectricity study are interwoven with issues in Threshold voltage, Negative impedance converter, Hafnium oxide and Capacitor. His research in Transistor intersects with topics in Neuromorphic engineering and Electronic engineering, CMOS, Logic gate.

His study looks at the intersection of CMOS and topics like Coercivity with Memory array. His Optoelectronics research focuses on Metal gate and how it connects with Static random-access memory. His study looks at the relationship between Non-volatile memory and topics such as Reliability, which overlap with Charge and Degradation.

Between 2019 and 2021, his most popular works were:

The Past, the Present, and the Future of Ferroelectric Memories (32 citations)
What’s next for negative capacitance electronics? (9 citations)
Impact of Read Operation on the Performance of HfO 2 -Based Ferroelectric FETs (9 citations)

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors

Milan Pešić;Franz Paul Gustav Fengler;Luca Larcher;Andrea Padovani.
Advanced Functional Materials (2016)

422 Citations

Reconfigurable Silicon Nanowire Transistors

André Heinzig;Stefan Slesazeck;Franz Kreupl;Thomas Mikolajick.
Nano Letters (2012)

346 Citations

A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

S. Dunkel;M. Trentzsch;R. Richter;P. Moll.
international electron devices meeting (2017)

254 Citations

Unveiling the double-well energy landscape in a ferroelectric layer

Michael Hoffmann;Franz P. G. Fengler;Melanie Herzig;Terence Mittmann.
Nature (2019)

253 Citations

A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

M. Trentzsch;S. Flachowsky;R. Richter;J. Paul.
international electron devices meeting (2016)

211 Citations

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

Michael Hoffmann;Milan Pešić;Korok Chatterjee;Asif I. Khan.
Advanced Functional Materials (2016)

210 Citations

Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG

J. Muller;E. Yurchuk;T. Schlosser;J. Paul.
symposium on vlsi technology (2012)

206 Citations

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

Halid Mulaosmanovic;Johannes Ocker;Stefan Müller;Uwe Schroeder.
ACS Applied Materials & Interfaces (2017)

203 Citations

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Thomas Mikolajick;Stefan Slesazeck;Min Hyuk Park;Uwe Schroeder.
Mrs Bulletin (2018)

168 Citations

Novel ferroelectric FET based synapse for neuromorphic systems

H. Mulaosmanovic;J. Ocker;S. Muller;M. Noack.
symposium on vlsi technology (2017)

156 Citations

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Frequent Co-Authors

External Links

Personal Website for Stefan Slesazeck