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Stefan Slesazeck

Stefan Slesazeck

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
58
Citations
12644
World Ranking
1871
National Ranking
54

Overview

Stefan Slesazeck is primarily affiliated with Namlab gGmbH in Germany and works extensively within the field of Engineering, focusing especially on Electrical and Electronic Engineering. Their research spans multiple subfields including Materials Chemistry, Cellular and Molecular Neuroscience, Artificial Intelligence, and Cognitive Neuroscience.

The main topics of their work include:

  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Ferroelectric and Piezoelectric Materials
  • Advancements in Semiconductor Devices and Circuit Design
  • Neural dynamics and brain function

Stefan Slesazeck has published significant research articles such as:

  • "Embedded Devices for Neuromorphic Time-Series Assessment", 2022, Maryland Shared Open Access Repository (USMAI Consortium)
  • "The Past, the Present, and the Future of Ferroelectric Memories", 2020, IEEE Transactions on Electron Devices
  • "Next generation ferroelectric materials for semiconductor process integration and their applications", 2021, Journal of Applied Physics
  • "Ferroelectric field-effect transistors based on HfO2: a review", 2021, Nanotechnology
  • "From Ferroelectric Material Optimization to Neuromorphic Devices", 2022, Advanced Materials

Their research outputs have appeared frequently in several publication venues, including:

  • arXiv (Cornell University)
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • Advanced Electronic Materials
  • ACS Applied Materials & Interfaces

Stefan collaborates regularly with a number of co-authors. Frequent collaborators include:

  • Thomas Mikolajick
  • Suzanne Lancaster
  • Halid Mulaosmanovic
  • Uwe Schroeder
  • Evelyn T. Breyer

Best Publications

  • Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors

    Milan Pešić;Franz Paul Gustav Fengler;Luca Larcher;Andrea Padovani

  • A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

    S. Dunkel;M. Trentzsch;R. Richter;P. Moll

  • Reconfigurable Silicon Nanowire Transistors

    André Heinzig;Stefan Slesazeck;Franz Kreupl;Thomas Mikolajick

  • The Past, the Present, and the Future of Ferroelectric Memories

    T. Mikolajick;U. Schroeder;S. Slesazeck

  • Unveiling the double-well energy landscape in a ferroelectric layer

    Michael Hoffmann;Franz P. G. Fengler;Melanie Herzig;Terence Mittmann

  • Next generation ferroelectric materials for semiconductor process integration and their applications

    T. Mikolajick;S. Slesazeck;H. Mulaosmanovic;M. H. Park

  • A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

    M. Trentzsch;S. Flachowsky;R. Richter;J. Paul

  • Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

    Halid Mulaosmanovic;Johannes Ocker;Stefan Müller;Uwe Schroeder

  • Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

    Thomas Mikolajick;Stefan Slesazeck;Min Hyuk Park;Uwe Schroeder

  • Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG

    J. Muller;E. Yurchuk;T. Schlosser;J. Paul

  • Ferroelectric field-effect transistors based on HfO2: a review.

    Halid Mulaosmanovic;Evelyn T Breyer;Stefan Dünkel;Sven Beyer

  • Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

    Michael Hoffmann;Milan Pešić;Korok Chatterjee;Asif I. Khan

  • Novel ferroelectric FET based synapse for neuromorphic systems

    H. Mulaosmanovic;J. Ocker;S. Muller;M. Noack

  • Mimicking biological neurons with a nanoscale ferroelectric transistor

    Halid Mulaosmanovic;Elisabetta Chicca;Martin Bertele;Thomas Mikolajick

  • Nanoscale resistive switching memory devices: a review.

    Stefan Slesazeck;Thomas Mikolajick

  • Nonlinear Dynamics of a Locally-Active Memristor

    Alon Ascoli;Stefan Slesazeck;Hannes Mahne;Ronald Tetzlaff

  • Physical model of threshold switching in NbO2 based memristors

    S. Slesazeck;H. Mähne;H. Wylezich;A. Wachowiak

  • Impact of Scaling on the Performance of HfO 2 -Based Ferroelectric Field Effect Transistors

    Ekaterina Yurchuk;Johannes Muller;Jan Paul;Till Schlosser

  • Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells

    H. Mulaosmanovic;S. Slesazeck;J. Ocker;M. Pesic

  • Ferroelectric FETs With 20-nm-Thick HfO 2 Layer for Large Memory Window and High Performance

    Halid Mulaosmanovic;Evelyn T. Breyer;Thomas Mikolajick;Stefan Slesazeck

Frequent Co-Authors

Uwe Schroeder
Uwe Schroeder Namlab gGmbH
Michael J. Hoffmann
Michael J. Hoffmann Karlsruhe Institute of Technology
Johannes Müller
Johannes Müller GlobalFoundries (Germany)
Heidemarie Schmidt
Heidemarie Schmidt Leibniz Institute of Photonic Technology
Shengqiang Zhou
Shengqiang Zhou Helmholtz-Zentrum Dresden-Rossendorf
Manfred Helm
Manfred Helm Helmholtz-Zentrum Dresden-Rossendorf
Sayeef Salahuddin
Sayeef Salahuddin University of California, Berkeley
Wanli Zhang
Wanli Zhang University of Electronic Science and Technology of China

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