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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
16868
World Ranking
3008
National Ranking
89

Overview

Johannes Müller is affiliated with GlobalFoundries in Germany and has an extensive publication record primarily in the fields of Materials Science and Engineering. Their research activity prominently includes Electrical and Electronic Engineering as well as Materials Chemistry, with additional contributions to Radiation, Atomic and Molecular Physics, and Optics, and Surfaces, Coatings and Films.

The scientist's work covers multiple specialized topics, including:

  • Ferroelectric and Negative Capacitance Devices
  • MXene and MAX Phase Materials
  • Semiconductor materials and devices
  • Advanced X-ray Imaging Techniques
  • Electron and X-Ray Spectroscopy Techniques
  • Advanced Electron Microscopy Techniques and Applications
  • 2D Materials and Applications

Frequent publication venues for their research include:

  • IEEE Transactions on Electron Devices
  • Microscopy and Microanalysis
  • IEEE Electron Device Letters
  • arXiv (Cornell University)
  • Zenodo (CERN European Organization for Nuclear Research)

Among the recent papers authored or co-authored by Johannes Müller are:

  • "Ultrathin Ga2O3 Glass: A Large-Scale Passivation and Protection Material for Monolayer WS2" (2020) published in Advanced Materials
  • "Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction" (2020) published in Nanomaterials
  • "Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs" (2020) published in IEEE Electron Device Letters
  • "Multi-resolution convolutional neural networks for inverse problems" (2020) published in Scientific Reports
  • "Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs" (2020) published in IEEE Transactions on Electron Devices

Johannes Müller frequently collaborates with colleagues including Christoph T. Koch, Zdravko Kochovski, Michael J. Bojdys, Benedikt Haas, and Konrad Seidel. Their joint publications contribute significantly to the refinement and understanding of materials characterization and semiconductor device technology.

Best Publications

  • Ferroelectricity in hafnium oxide thin films

    T. S. Böscke;J. Müller;D. Bräuhaus;U. Schröder

  • Ferroelectricity in Simple Binary ZrO2 and HfO2

    Johannes Müller;Tim S. Böscke;Uwe Schröder;Stefan Mueller

  • Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

    Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Yu Jin Kim

  • Ferroelectricity in yttrium-doped hafnium oxide

    J. Müller;U. Schröder;T. S. Böscke;I. Müller

  • Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

    J. Müller;T. S. Böscke;D. Bräuhaus;U. Schröder

  • Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

    J. Muller;T. S. Boscke;S. Muller;E. Yurchuk

  • A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

    S. Dunkel;M. Trentzsch;R. Richter;P. Moll

  • Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

    J. Müller;P. Polakowski;S. Mueller;T. Mikolajick

  • Ferroelectricity in undoped hafnium oxide

    Patrick Polakowski;Johannes Müller

  • Impact of different dopants on the switching properties of ferroelectric hafniumoxide

    Uwe Schroeder;Ekaterina Yurchuk;Johannes Müller;Dominik Martin

  • Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

    Dayu Zhou;Jin Xu;Qing Li;Yan Guan

  • Phase transitions in ferroelectric silicon doped hafnium oxide

    T. S. Böscke;St. Teichert;D. Bräuhaus;J. Müller

  • A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

    M. Trentzsch;S. Flachowsky;R. Richter;J. Paul

  • Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

    T. S. Boscke;J. Muller;D. Brauhaus;U. Schroder

  • Ferroelectric ternary content-addressable memory for one-shot learning

    Kai Ni;Xunzhao Yin;Ann Franchesca Laguna;Siddharth Joshi

  • Charge-Trapping Phenomena in HfO 2 -Based FeFET-Type Nonvolatile Memories

    Ekaterina Yurchuk;Johannes Muller;Stefan Muller;Jan Paul

  • Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

    Halid Mulaosmanovic;Johannes Ocker;Stefan Müller;Uwe Schroeder

  • Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG

    J. Muller;E. Yurchuk;T. Schlosser;J. Paul

  • High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

    T. Ali;P. Polakowski;S. Riedel;T. Buttner

  • Novel ferroelectric FET based synapse for neuromorphic systems

    H. Mulaosmanovic;J. Ocker;S. Muller;M. Noack

Frequent Co-Authors

Stefan Slesazeck
Stefan Slesazeck Namlab gGmbH
Uwe Schroeder
Uwe Schroeder Namlab gGmbH
Ulrich Böttger
Ulrich Böttger RWTH Aachen University
Xianlin Dong
Xianlin Dong Chinese Academy of Sciences
Stefan Siebert
Stefan Siebert University of Göttingen
Suman Datta
Suman Datta Georgia Institute of Technology
Sergei V. Kalinin
Sergei V. Kalinin University of Tennessee at Knoxville

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