World's Best Scientists 2026 revealed!
Halid Mulaosmanovic

Halid Mulaosmanovic

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
4836
World Ranking
5805
National Ranking
163

Halid Mulaosmanovic publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Halid Mulaosmanovic sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 66 publications — 1st percentile

1% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Halid Mulaosmanovic D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Halid Mulaosmanovic sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Halid Mulaosmanovic is primarily affiliated with Namlab gGmbH in Germany. Their research centers on engineering with a strong focus on electrical and electronic engineering, reflecting a considerable body of work within this subfield. Contributions also extend into materials chemistry, biomedical engineering, atomic and molecular physics and optics, as well as cellular and molecular neuroscience.

The main topics of Halid Mulaosmanovic's work include:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • MXene and MAX Phase Materials
  • Advancements in Semiconductor Devices and Circuit Design
  • Ferroelectric and Piezoelectric Materials
  • Advanced Sensor and Energy Harvesting Materials

Mulaosmanovic's frequent coauthors include:

  • Sven Beyer
  • Thomas Mikolajick
  • Stefan Dünkel
  • Stefan Slesazeck
  • Dominik Kleimaier

The scientist has published repeatedly in venues such as:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • arXiv (Cornell University)
  • ACS Applied Materials & Interfaces
  • Applied Physics Letters

Some recent papers authored by Halid Mulaosmanovic include:

  • Ferroelectric field-effect transistors based on HfO2: a review, 2021, Nanotechnology

Other notable recent papers in the broader research area, although not authored by Mulaosmanovic directly, include:

  • Next generation ferroelectric materials for semiconductor process integration and their applications, 2021, Journal of Applied Physics
  • Domains and domain dynamics in fluorite-structured ferroelectrics, 2021, Applied Physics Reviews
  • Ferroelectric-based synapses and neurons for neuromorphic computing, 2022, Neuromorphic Computing and Engineering
  • Polarization switching in thin doped HfO2 ferroelectric layers, 2020, Applied Physics Letters

Best Publications

  • A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

    S. Dunkel;M. Trentzsch;R. Richter;P. Moll

  • Next generation ferroelectric materials for semiconductor process integration and their applications

    T. Mikolajick;S. Slesazeck;H. Mulaosmanovic;M. H. Park

  • A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

    M. Trentzsch;S. Flachowsky;R. Richter;J. Paul

  • Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

    Halid Mulaosmanovic;Johannes Ocker;Stefan Müller;Uwe Schroeder

  • Ferroelectric field-effect transistors based on HfO2: a review.

    Halid Mulaosmanovic;Evelyn T Breyer;Stefan Dünkel;Sven Beyer

  • Novel ferroelectric FET based synapse for neuromorphic systems

    H. Mulaosmanovic;J. Ocker;S. Muller;M. Noack

  • Mimicking biological neurons with a nanoscale ferroelectric transistor

    Halid Mulaosmanovic;Elisabetta Chicca;Martin Bertele;Thomas Mikolajick

  • Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells

    H. Mulaosmanovic;S. Slesazeck;J. Ocker;M. Pesic

  • Ferroelectric FETs With 20-nm-Thick HfO 2 Layer for Large Memory Window and High Performance

    Halid Mulaosmanovic;Evelyn T. Breyer;Thomas Mikolajick;Stefan Slesazeck

  • Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

    Franz P. G. Fengler;Milan Pešić;Sergej Starschich;Theodor Schneller

  • Hafnia-Based Double-Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing

    Benjamin Max;Michael Hoffmann;Halid Mulaosmanovic;Stefan Slesazeck

  • FeFET: A versatile CMOS compatible device with game-changing potential

    Sven Beyer;Stefan Dunkel;Martin Trentzsch;Johannes Muller

  • Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors.

    Halid Mulaosmanovic;Thomas Mikolajick;Stefan Slesazeck

  • Domains and domain dynamics in fluorite-structured ferroelectrics

    Dong Hyun Lee;Younghwan Lee;Kun Yang;Ju Yong Park

  • High endurance strategies for hafnium oxide based ferroelectric field effect transistor

    J. Muller;P. Polakowski;S. Muller;H. Mulaosmanovic

  • Reconfigurable NAND/NOR logic gates in 28 nm HKMG and 22 nm FD-SOI FeFET technology

    E. T. Breyer;H. Mulaosmanovic;T. Mikolajick;S. Slesazeck

  • Computing with ferroelectric FETs: Devices, models, systems, and applications

    Ahmedullah Aziz;Evelyn T. Breyer;An Chen;Xiaoming Chen

  • Polarization switching in thin doped HfO2 ferroelectric layers

    Monica Materano;Patrick D. Lomenzo;Halid Mulaosmanovic;Michael Hoffmann

  • Random Number Generation Based on Ferroelectric Switching

    Halid Mulaosmanovic;Thomas Mikolajick;Stefan Slesazeck

  • Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating

    Halid Mulaosmanovic;Evelyn T. Breyer;Thomas Mikolajick;Stefan Slesazeck

  • Impact of Read Operation on the Performance of HfO 2 -Based Ferroelectric FETs

    Halid Mulaosmanovic;Stefan Dunkel;Johannes Muller;Martin Trentzsch

Frequent Co-Authors

Stefan Slesazeck
Stefan Slesazeck Namlab gGmbH
Uwe Schroeder
Uwe Schroeder Namlab gGmbH
Johannes Müller
Johannes Müller GlobalFoundries (Germany)
Michael J. Hoffmann
Michael J. Hoffmann Karlsruhe Institute of Technology
Andrea L. Lacaita
Andrea L. Lacaita Polytechnic University of Milan
Alessandro S. Spinelli
Alessandro S. Spinelli Polytechnic University of Milan
Min Hyuk Park
Min Hyuk Park Seoul National University
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Akira Toriumi
Akira Toriumi University of Tokyo

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