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Halid Mulaosmanovic

Halid Mulaosmanovic

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
4836
World Ranking
5805
National Ranking
164

Overview

Halid Mulaosmanovic is primarily affiliated with Namlab gGmbH in Germany. Their research centers on engineering with a strong focus on electrical and electronic engineering, reflecting a considerable body of work within this subfield. Contributions also extend into materials chemistry, biomedical engineering, atomic and molecular physics and optics, as well as cellular and molecular neuroscience.

The main topics of Halid Mulaosmanovic's work include:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • MXene and MAX Phase Materials
  • Advancements in Semiconductor Devices and Circuit Design
  • Ferroelectric and Piezoelectric Materials
  • Advanced Sensor and Energy Harvesting Materials

Mulaosmanovic's frequent coauthors include:

  • Sven Beyer
  • Thomas Mikolajick
  • Stefan Dünkel
  • Stefan Slesazeck
  • Dominik Kleimaier

The scientist has published repeatedly in venues such as:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • arXiv (Cornell University)
  • ACS Applied Materials & Interfaces
  • Applied Physics Letters

Some recent papers authored by Halid Mulaosmanovic include:

  • Ferroelectric field-effect transistors based on HfO2: a review, 2021, Nanotechnology

Other notable recent papers in the broader research area, although not authored by Mulaosmanovic directly, include:

  • Next generation ferroelectric materials for semiconductor process integration and their applications, 2021, Journal of Applied Physics
  • Domains and domain dynamics in fluorite-structured ferroelectrics, 2021, Applied Physics Reviews
  • Ferroelectric-based synapses and neurons for neuromorphic computing, 2022, Neuromorphic Computing and Engineering
  • Polarization switching in thin doped HfO2 ferroelectric layers, 2020, Applied Physics Letters

Best Publications

  • A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

    S. Dunkel;M. Trentzsch;R. Richter;P. Moll

  • Next generation ferroelectric materials for semiconductor process integration and their applications

    T. Mikolajick;S. Slesazeck;H. Mulaosmanovic;M. H. Park

  • A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

    M. Trentzsch;S. Flachowsky;R. Richter;J. Paul

  • Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

    Halid Mulaosmanovic;Johannes Ocker;Stefan Müller;Uwe Schroeder

  • Ferroelectric field-effect transistors based on HfO2: a review.

    Halid Mulaosmanovic;Evelyn T Breyer;Stefan Dünkel;Sven Beyer

  • Novel ferroelectric FET based synapse for neuromorphic systems

    H. Mulaosmanovic;J. Ocker;S. Muller;M. Noack

  • Mimicking biological neurons with a nanoscale ferroelectric transistor

    Halid Mulaosmanovic;Elisabetta Chicca;Martin Bertele;Thomas Mikolajick

  • Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells

    H. Mulaosmanovic;S. Slesazeck;J. Ocker;M. Pesic

  • Ferroelectric FETs With 20-nm-Thick HfO 2 Layer for Large Memory Window and High Performance

    Halid Mulaosmanovic;Evelyn T. Breyer;Thomas Mikolajick;Stefan Slesazeck

  • Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

    Franz P. G. Fengler;Milan Pešić;Sergej Starschich;Theodor Schneller

  • Hafnia-Based Double-Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing

    Benjamin Max;Michael Hoffmann;Halid Mulaosmanovic;Stefan Slesazeck

  • FeFET: A versatile CMOS compatible device with game-changing potential

    Sven Beyer;Stefan Dunkel;Martin Trentzsch;Johannes Muller

  • Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors.

    Halid Mulaosmanovic;Thomas Mikolajick;Stefan Slesazeck

  • Domains and domain dynamics in fluorite-structured ferroelectrics

    Dong Hyun Lee;Younghwan Lee;Kun Yang;Ju Yong Park

  • High endurance strategies for hafnium oxide based ferroelectric field effect transistor

    J. Muller;P. Polakowski;S. Muller;H. Mulaosmanovic

  • Reconfigurable NAND/NOR logic gates in 28 nm HKMG and 22 nm FD-SOI FeFET technology

    E. T. Breyer;H. Mulaosmanovic;T. Mikolajick;S. Slesazeck

  • Computing with ferroelectric FETs: Devices, models, systems, and applications

    Ahmedullah Aziz;Evelyn T. Breyer;An Chen;Xiaoming Chen

  • Polarization switching in thin doped HfO2 ferroelectric layers

    Monica Materano;Patrick D. Lomenzo;Halid Mulaosmanovic;Michael Hoffmann

  • Random Number Generation Based on Ferroelectric Switching

    Halid Mulaosmanovic;Thomas Mikolajick;Stefan Slesazeck

  • Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating

    Halid Mulaosmanovic;Evelyn T. Breyer;Thomas Mikolajick;Stefan Slesazeck

  • Impact of Read Operation on the Performance of HfO 2 -Based Ferroelectric FETs

    Halid Mulaosmanovic;Stefan Dunkel;Johannes Muller;Martin Trentzsch

Frequent Co-Authors

Stefan Slesazeck
Stefan Slesazeck Namlab gGmbH
Uwe Schroeder
Uwe Schroeder Namlab gGmbH
Johannes Müller
Johannes Müller GlobalFoundries (Germany)
Michael J. Hoffmann
Michael J. Hoffmann Karlsruhe Institute of Technology
Andrea L. Lacaita
Andrea L. Lacaita Polytechnic University of Milan
Alessandro S. Spinelli
Alessandro S. Spinelli Polytechnic University of Milan
Min Hyuk Park
Min Hyuk Park Seoul National University
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Akira Toriumi
Akira Toriumi University of Tokyo

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