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Alessandro S. Spinelli

Alessandro S. Spinelli

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
6407
World Ranking
4319
National Ranking
147

Overview

Alessandro S. Spinelli is affiliated with the Polytechnic University of Milan in Italy and has contributed extensively to the field of engineering, specifically electrical and electronic engineering. Their research mainly focuses on semiconductor materials and devices, with additional work touching on advancements in semiconductor devices and circuit design, as well as advanced data storage technologies.

The scientist has produced numerous publications exploring key aspects of variability and noise in semiconductor devices, often using experimental and modeling approaches to characterize underlying phenomena affecting device performance. Notable papers include:

  • "Variability Effects in Nanowire and Macaroni MOSFETs-Part I: Random Dopant Fluctuations," 2020, IEEE Transactions on Electron Devices
  • "Random Telegraph Noise in 3D NAND Flash Memories," 2021, Micromachines
  • "Variability Effects in Nanowire and Macaroni MOSFETs-Part II: Random Telegraph Noise," 2020, IEEE Transactions on Electron Devices

Spinelli's work often intersects with topics such as ferroelectric and negative capacitance devices, integrated circuits and semiconductor failure analysis, electrostatic discharge in electronics, and ferroelectric and piezoelectric materials.

Frequent co-authors include Christian Monzio Compagnoni, Gerardo Malavena, Mattia Giulianini, Luca Chiavarone, and David G. Refaldi, reflecting a collaborative research environment.

Publications primarily appear in the following venues:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • IEEE Journal of the Electron Devices Society
  • Micromachines
  • IEEE Transactions on Dielectrics and Electrical Insulation

The scientist's primary fields of study can be summarized as:

  • Engineering
  • Electrical and Electronic Engineering
  • Computer Networks and Communications
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics
  • Ocean Engineering

Best Publications

  • Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca–Nanometer Flash Memories

    A. Ghetti;C.M. Compagnoni;A.S. Spinelli;A. Visconti

  • Reviewing the Evolution of the NAND Flash Technology

    Christian Monzio Compagnoni;Akira Goda;Alessandro S. Spinelli;Peter Feeley

  • Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses.

    Wei Wang;Giacomo Pedretti;Valerio Milo;Roberto Carboni

  • Physics and numerical simulation of single photon avalanche diodes

    A. Spinelli;A.L. Lacaita

  • Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity

    G. Pedretti;V. Milo;S. Ambrogio;R. Carboni

  • Statistical Model for Random Telegraph Noise in Flash Memories

    C. Monzio Compagnoni;R. Gusmeroli;A.S. Spinelli;A.L. Lacaita

  • Modeling of SILC based on electron and hole tunneling. II. Steady-state

    D. Ielmini;A.S. Spinelli;M.A. Rigamonti;A.L. Lacaita

  • Modeling of SILC based on electron and hole tunneling. I. Transient effects

    D. Ielmini;A.S. Spinelli;M.A. Rigamonti;A.L. Lacaita

  • Random Telegraph Noise Effect on the Programmed Threshold-Voltage Distribution of Flash Memories

    C.M. Compagnoni;M. Ghidotti;A.L. Lacaita;A.S. Spinelli

  • How far will silicon nanocrystals push the scaling limits of NVMs technologies

    B. De Salvo;C. Gerardi;S. Lombardo;T. Baron

  • Scaling trends for random telegraph noise in deca-nanometer Flash memories

    A. Ghetti;C.M. Compagnoni;F. Biancardi;A.L. Lacaita

  • Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

    Alessandro Sottocornola Spinelli;Christian Monzio Compagnoni;Andrea Leonardo Lacaita

  • Theory of direct tunneling current in metal–oxide–semiconductor structures

    R. Clerc;A. Spinelli;G. Ghibaudo;G. Pananakakis

  • Self-consistent 2-D model for quantum effects in n-MOS transistors

    A.S. Spinelli;A. Benvenuti;A. Pacelli

  • A statistical model for SILC in flash memories

    D. Ielmini;A.S. Spinelli;A.L. Lacaita;A. Modelli

  • Mean gain of avalanche photodiodes in a dead space model

    A. Spinelli;A.L. Lacaita

  • Analytical Model for the Electron-Injection Statistics During Programming of Nanoscale nand Flash Memories

    C.M. Compagnoni;R. Gusmeroli;A.S. Spinelli;A. Visconti

  • First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming

    C.M. Compagnoni;A.S. Spinelli;R. Gusmeroli;A.L. Lacaita

  • Counting photoelectrons in the response of a photomultiplier tube to single picosecond light pulses

    Guido Zambra;Maria Bondani;Alessandro S. Spinelli;Fabio Paleari

  • Avalanche detector with ultraclean response for time-resolved photon counting

    A. Spinelli;M.A. Ghioni;S.D. Cova;L.M. Davis

  • Reliability of NAND Flash Arrays: A Review of What the 2-D–to–3-D Transition Meant

    Christian Monzio Compagnoni;Alessandro S. Spinelli

Frequent Co-Authors

Andrea L. Lacaita
Andrea L. Lacaita Polytechnic University of Milan
Daniele Ielmini
Daniele Ielmini Polytechnic University of Milan
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Sergio Cova
Sergio Cova Polytechnic University of Milan
Marco Fanciulli
Marco Fanciulli University of Milano-Bicocca
Stefano Ambrogio
Stefano Ambrogio Meta for Business
John S. Suehle
John S. Suehle National Institute of Standards and Technology
Asen Asenov
Asen Asenov University of Glasgow

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