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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
9346
World Ranking
2695
National Ranking
146

Overview

John P. R. David is affiliated with the University of Sheffield in the United Kingdom. Their academic profile reflects a focus within the university framework, contributing to its research community.

There are no recent papers, frequent co-authors, publication venues, book publications, main fields of study, subfields, or main topics of work listed for John P. R. David.

Similarly, there are no awards recorded as part of their academic background.

Given the lack of detailed publication and research data, the available information centers on the association with the University of Sheffield, indicating their professional environment and academic context.

Best Publications

  • Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

    P W Fry;I E Itskevich;I E Itskevich;D J Mowbray;M S Skolnick

  • Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

    H. Y. Liu;I. R. Sellers;T. J. Badcock;D. J. Mowbray

  • Avalanche multiplication noise characteristics in thin GaAs p/sup +/-i-n/sup +/ diodes

    K.F. Li;D.S. Ong;J.P.R. David;G.J. Rees

  • Design and performance of an InGaAs-InP single-photon avalanche diode detector

    S. Pellegrini;R.E. Warburton;L.J.J. Tan;Jo Shien Ng

  • An Enhanced Color Shift Keying Modulation Scheme for High-Speed Wireless Visible Light Communications

    Ravinder Singh;Timothy O’Farrell;John P. R. David

  • A Monte Carlo investigation of multiplication noise in thin p/sup +/-i-n/sup +/ GaAs avalanche photodiodes

    D.S. Ong;K.F. Li;G.J. Rees;G.M. Dunn

  • Temperature Dependence of Impact Ionization in Submicrometer Silicon Devices

    D.J. Massey;J.P.R. David;G.J. Rees

  • Room-temperature 1.6-μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer

    H. Y. Liu;M. J. Steer;T. J. Badcock;D. J. Mowbray

  • A simple model to determine multiplication and noise in avalanche photodiodes

    D. S. Ong;K. F. Li;G. J. Rees;J. P. R. David

  • Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures

    H. Y. Liu;I. R. Sellers;M. Gutiérrez;K. M. Groom

  • Excess Avalanche Noise in $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$

    Y.L. Goh;A.R.J. Marshall;D.J. Massey;J.S. Ng

  • Impact Ionization Coefficients in 4H-SiC

    W.S. Loh;B.K. Ng;J.S. Ng;S.I. Soloviev

  • Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P

    M. C. DeLong;D. J. Mowbray;R. A. Hogg;M. S. Skolnick

  • Localization effects and band gap of GaAsBi alloys

    Abdul Rahman Mohmad;Abdul Rahman Mohmad;F. Bastiman;C. J. Hunter;R. D. Richards

  • Temperature Dependence of Avalanche Breakdown in InP and InAlAs

    Lionel Juen Jin Tan;Daniel Swee Guan Ong;Jo Shien Ng;Chee Hing Tan

  • Nonlocal effects in thin 4H-SiC UV avalanche photodiodes

    B.K. Ng;J.P.R. David;R.C. Tozer;G.J. Rees

  • Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes

    Xin Yi;Shiyu Xie;Baolai Liang;Leh W. Lim

  • The effect of Bi composition to the optical quality of GaAs1−xBix

    Abdul Rahman Mohmad;F. Bastiman;C. J. Hunter;J. S. Ng

  • Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111)B GaAs

    A. S. Pabla;J. L. Sanchez‐Rojas;J. Woodhead;R. Grey

  • Investigation of impact ionization in thin GaAs diodes

    S.A. Plimmer;J.P.R. David;D.C. Herbert;T.-W. Lee

  • Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

    A. R. J. Marshall;C. H. Tan;M. J. Steer;J. P. R. David

Frequent Co-Authors

Mark Hopkinson
Mark Hopkinson University of Sheffield
Sanjay Krishna
Sanjay Krishna The Ohio State University
Huiyun Liu
Huiyun Liu University College London
Diana L. Huffaker
Diana L. Huffaker The University of Texas at Arlington
Sergio Cova
Sergio Cova Polytechnic University of Milan
Elena Plis
Elena Plis Georgia Institute of Technology
Ana M. Sanchez
Ana M. Sanchez University of Warwick
A. G. Cullis
A. G. Cullis University of Sheffield
Burhanuddin Yeop Majlis
Burhanuddin Yeop Majlis National University of Malaysia
Jonathan J. Finley
Jonathan J. Finley Technical University of Munich

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