World's Best Scientists 2026 revealed!
J. Van Houdt

J. Van Houdt

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
4699
World Ranking
6058
National Ranking
127

J. Van Houdt publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where J. Van Houdt sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 245 publications — 43rd percentile

43% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

J. Van Houdt D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where J. Van Houdt sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

J. Van Houdt is a researcher affiliated with Imec in Belgium specializing in Engineering and Materials Science, with a focus on Electrical and Electronic Engineering and Materials Chemistry. Their scholarly work spans numerous topics related to semiconductor technologies and advanced memory devices.

Their research portfolio covers specific themes, including:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • MXene and MAX Phase Materials
  • Ferroelectric and Piezoelectric Materials
  • Phase-change materials and chalcogenides
  • Thin-Film Transistor Technologies

Recent notable publications from J. Van Houdt include:

  • Investigation of Imprint in FE-HfO₂ and Its Recovery, 2020, IEEE Transactions on Electron Devices
  • Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal-Ferroelectric-Metal Capacitors, 2022, IEEE Transactions on Electron Devices
  • High performance La-doped HZO based ferroelectric capacitors by interfacial engineering, 2022, 2022 International Electron Devices Meeting (IEDM)
  • High-Endurance Ferroelectric (La, Y) and (La, Gd) Co-Doped Hafnium Zirconate Grown by Atomic Layer Deposition, 2022, ACS Applied Electronic Materials
  • Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors, 2023, IEEE Electron Device Letters

J. Van Houdt frequently publishes in the following venues:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Applied Physics Letters
  • physica status solidi (RRL) - Rapid Research Letters
  • Solid-State Electronics

Their collaborative network includes frequent coauthors such as:

  • Gouri Sankar Kar
  • M. Popovici
  • N. Ronchi
  • Sergiu Clima
  • Kaustuv Banerjee

J. Van Houdt's expertise typically encompasses advanced device engineering and materials chemistry within the scope of ferroelectric materials and semiconductor device technologies. Their work addresses challenges in memory technologies, including fatigue-free capacitor materials and novel ferroelectric thin films, contributing to the development of electronic devices with improved endurance and performance.

Best Publications

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices

    B. Govoreanu;P. Blomme;M. Rosmeulen;J. Van Houdt

  • Vertical Ferroelectric HfO 2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory

    K. Florent;M. Pesic;A. Subirats;K. Banerjee

  • Analysis of the enhanced hot-electron injection in split-gate transistors useful for EEPROM applications

    J. Van Houdt;P. Heremans;L. Deferm;G. Groeseneken

  • Trap Spectroscopy by Charge Injection and Sensing (TSCIS): A quantitative electrical technique for studying defects in dielectric stacks

    R. Degraeve;M. Cho;B. Govoreanu;B. Kaczer

  • Analytical percolation model for predicting anomalous charge loss in flash memories

    R. Degraeve;F. Schuler;B. Kaczer;M. Lorenzini

  • HIM0S-a high efficiency flash E/sup 2/PROM cell for embedded memory applications

    J. Van Houdt;L. Haspeslagh;D. Wellekens;L. Deferm

  • Write/erase cycling endurance of memory cells with SiO/sub 2//HfO/sub 2/ tunnel dielectric

    P. Blomme;J. Van Houdt;Kristin De Meyer

  • Scaling down the interpoly dielectric for next generation Flash memory: Challenges and opportunities

    B. Govoreanu;D.P. Brunco;J. Van Houdt

  • Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications

    K. Florent;S. Lavizzari;M. Popovici;L. Di Piazza

  • Two-Pulse $C$ – $V$ : A New Method for Characterizing Electron Traps in the Bulk of $ \hbox{SiO}_{2}/\hbox{high-}\kappa$ Dielectric Stacks

    W.D. Zhang;B. Govoreanu;X.F. Zheng;D. Ruiz Aguado

  • Multilayer tunneling barriers for nonvolatile memory applications

    P. Blomme;B. Govoreanu;M. Rosmeulen;J. Van Houdt

  • An analytical model for the optimization of source-side injection flash EEPROM devices

    J.F. Van Houdt;G. Groeseneken;H.E. Maes

  • An investigation of the electron tunneling leakage current through ultrathin oxides/high-k gate stacks at inversion conditions

    B. Govoreanu;P. Blomme;K. Henson;J. Van Houdt

  • Simulation of nanofloating gate memory with high-k stacked dielectrics

    B. Govoreanu;P. Blomme;J. Van Houdt;K. De Meyer

  • Analytical model for failure rate prediction due to anomalous charge loss of flash memories

    R. Degraeve;F. Schuler;M. Lorenzini;D. Wellekens

  • A model for tunneling current in multi-layer tunnel dielectrics

    Bogdan Govoreanu;Pieter Blomme;Maarten Rosmeulen;Jan Van Houdt

  • Optimizing the Readout Bias for the Capacitorless 1T Bulk FinFET RAM Cell

    N. Collaert;M. Aoulaiche;M. Rakowski;A. Redolfi

  • A new scalable self-aligned dual-bit split-gate charge-trapping memory device

    L. Breuil;L. Haspeslagh;P. Blomme;D. Wellekens

  • Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices

    A. Maconi;A. Arreghini;C. Monzio Compagnoni;G. Van den bosch

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