World's Best Scientists 2026 revealed!
Herman Maes

Herman Maes

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
58
Citations
14921
World Ranking
1838
National Ranking
42

Materials Science

D-Index
60
Citations
15329
World Ranking
6962
National Ranking
72

Herman Maes publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Herman Maes sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 426 publications — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Herman Maes D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Herman Maes sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 58 D-Index — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 1998 - IEEE Fellow For contributions in the field on non-volatile silicon memory devices and MOS reliability physics.

Overview

Herman Maes is affiliated with Imec in Belgium, a research institution specializing in nanoelectronics and digital technologies. Their work encompasses contributions in the area of semiconductor devices and related materials science, particularly focusing on silicon memory technology and metal-oxide-semiconductor (MOS) device reliability physics.

A notable recognition in their career is the IEEE Fellow award received in 1998. This award was granted for contributions in non-volatile silicon memory devices and MOS reliability physics, highlighting specialized expertise in these technical domains.

No specific recent papers, frequent co-authors, or publication venues have been documented for this researcher. Similarly, data on book publications, main fields of study, subfields, and main topics covered in their research are not available for detailed listing.

The scientific profile presents Herman Maes primarily as a researcher with a long-standing relationship with Imec, working in advanced semiconductor device research. The focus on non-volatile memory devices and MOS reliability indicates involvement in understanding and improving the performance and durability of silicon-based memory technologies, which are essential components in modern electronics.

Best Publications

  • A reliable approach to charge-pumping measurements in MOS transistors

    G. Groeseneken;H.E. Maes;N. Beltran;R.F. De Keersmaecker

  • New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

    R. Degraeve;G. Groeseneken;R. Bellens;J.L. Ogier

  • Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation

    P. Heremans;J. Witters;G. Groeseneken;H.E. Maes

  • Silicon-on-insulator 'gate-all-around device'

    J.P. Colinge;M.H. Gao;A. Romano-Rodriguez;H. Maes

  • Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

    P. Heremans;R. Bellens;G. Groeseneken;H.E. Maes

  • A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

    R. Degraeve;G. Groeseneken;R. Bellens;M. Depas

  • On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

    K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger

  • Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics

    A. Kerber;E. Cartier;L. Pantisano;R. Degraeve

  • Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment

    Ingrid De Wolf;H. E. Maes;Stephen K. Jones

  • Transient enhanced diffusion of Boron in Si

    Suresh Jain;Wim Schoenmaker;Richard Lindsay;Peter Stolk

  • Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors

    Suresh Jain;M Willander;Herman Maes

  • Temperature dependence of threshold voltage in thin-film SOI MOSFETs

    G. Groeseneken;J.-P. Colinge;H.E. Maes;J.C. Alderman

  • Nonvolatile multilevel memories for digital applications

    B. Ricco;G. Torelli;M. Lanzoni;A. Manstretta

  • Analysis and modeling of on-chip high-voltage generator circuits for use in EEPROM circuits

    J.S. Witters;G. Groeseneken;H.E. Maes

  • Micro-Raman study of stress distribution in local isolation structures and correlation with transmission electron microscopy

    I. De Wolf;J. Vanhellemont;A. Romano‐Rodríguez;H. Norström

  • Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics

    A. Kerber;E. Cartier;L. Pantisano;M. Rosmeulen

  • An easy-to-use mismatch model for the MOS transistor

    J.A. Croon;M. Rosmeulen;S. Decoutere;W. Sansen

  • Subthreshold slope in thin-film SOI MOSFETs

    D.J. Wouters;J.-P. Colinge;H.E. Maes

  • Characterization of front and back Si-SiO/sub 2/ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping technique

    D.J. Wouters;M.R. Tack;G.V. Groeseneken;H.E. Maes

  • Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors

    G. Van den bosch;G.V. Groeseneken;P. Heremans;H.E. Maes

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