World's Best Scientists 2026 revealed!
Herman Maes

Herman Maes

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
58
Citations
14921
World Ranking
1838
National Ranking
42

Materials Science

D-Index
60
Citations
15329
World Ranking
6964
National Ranking
72

Research.com Recognitions

  • 1998 - IEEE Fellow For contributions in the field on non-volatile silicon memory devices and MOS reliability physics.

Overview

Herman Maes is affiliated with Imec in Belgium, a research institution specializing in nanoelectronics and digital technologies. Their work encompasses contributions in the area of semiconductor devices and related materials science, particularly focusing on silicon memory technology and metal-oxide-semiconductor (MOS) device reliability physics.

A notable recognition in their career is the IEEE Fellow award received in 1998. This award was granted for contributions in non-volatile silicon memory devices and MOS reliability physics, highlighting specialized expertise in these technical domains.

No specific recent papers, frequent co-authors, or publication venues have been documented for this researcher. Similarly, data on book publications, main fields of study, subfields, and main topics covered in their research are not available for detailed listing.

The scientific profile presents Herman Maes primarily as a researcher with a long-standing relationship with Imec, working in advanced semiconductor device research. The focus on non-volatile memory devices and MOS reliability indicates involvement in understanding and improving the performance and durability of silicon-based memory technologies, which are essential components in modern electronics.

Best Publications

  • A reliable approach to charge-pumping measurements in MOS transistors

    G. Groeseneken;H.E. Maes;N. Beltran;R.F. De Keersmaecker

  • New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

    R. Degraeve;G. Groeseneken;R. Bellens;J.L. Ogier

  • Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation

    P. Heremans;J. Witters;G. Groeseneken;H.E. Maes

  • Silicon-on-insulator 'gate-all-around device'

    J.P. Colinge;M.H. Gao;A. Romano-Rodriguez;H. Maes

  • Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

    P. Heremans;R. Bellens;G. Groeseneken;H.E. Maes

  • A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

    R. Degraeve;G. Groeseneken;R. Bellens;M. Depas

  • On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

    K. Martens;Chi On Chui;G. Brammertz;B. De Jaeger

  • Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics

    A. Kerber;E. Cartier;L. Pantisano;R. Degraeve

  • Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment

    Ingrid De Wolf;H. E. Maes;Stephen K. Jones

  • Transient enhanced diffusion of Boron in Si

    Suresh Jain;Wim Schoenmaker;Richard Lindsay;Peter Stolk

  • Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors

    Suresh Jain;M Willander;Herman Maes

  • Temperature dependence of threshold voltage in thin-film SOI MOSFETs

    G. Groeseneken;J.-P. Colinge;H.E. Maes;J.C. Alderman

  • Nonvolatile multilevel memories for digital applications

    B. Ricco;G. Torelli;M. Lanzoni;A. Manstretta

  • Analysis and modeling of on-chip high-voltage generator circuits for use in EEPROM circuits

    J.S. Witters;G. Groeseneken;H.E. Maes

  • Micro-Raman study of stress distribution in local isolation structures and correlation with transmission electron microscopy

    I. De Wolf;J. Vanhellemont;A. Romano‐Rodríguez;H. Norström

  • Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectrics

    A. Kerber;E. Cartier;L. Pantisano;M. Rosmeulen

  • An easy-to-use mismatch model for the MOS transistor

    J.A. Croon;M. Rosmeulen;S. Decoutere;W. Sansen

  • Subthreshold slope in thin-film SOI MOSFETs

    D.J. Wouters;J.-P. Colinge;H.E. Maes

  • Characterization of front and back Si-SiO/sub 2/ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping technique

    D.J. Wouters;M.R. Tack;G.V. Groeseneken;H.E. Maes

  • Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors

    G. Van den bosch;G.V. Groeseneken;P. Heremans;H.E. Maes

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For those interested in expanding their expertise beyond traditional Electronics and Electrical Engineering, exploring accelerated online degree programs can be a practical option. These programs are designed to help working professionals fast-track their education without compromising their career schedules.

Another avenue gaining popularity is pursuing an instructional design degree online. This field blends technology with education, offering unique career paths in creating effective learning tools and resources, especially valuable within tech industries.

Many students benefit from what is a competency based masters degree, which focuses on mastering skills at an individualized pace. This flexible approach can accelerate graduation times and align well with practical career goals in engineering and technology sectors.

Additionally, for military spouses seeking higher education opportunities, several military spouse online college programs provide tailored support and resources, ensuring accessibility to quality education no matter where mobile military families reside.

Best Scientists Citing Herman Maes

Trending Scientists

Recently Published Articles