World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
49
Citations
9081
World Ranking
2955
National Ranking
87

Materials Science

D-Index
48
Citations
9042
World Ranking
10808
National Ranking
604

Overview

Dirk Wouters is affiliated with RWTH Aachen University in Germany and has a research portfolio spanning across several intersecting fields of study, including Engineering, Materials Science, and Neuroscience. Their work primarily focuses on Electrical and Electronic Engineering within these disciplines.

Their research addresses topics such as Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Transition Metal Oxide Nanomaterials, Neural dynamics and brain function, Semiconductor materials and devices, Neuroscience and Neural Engineering, and Photoreceptor and optogenetics research.

Wouters has contributed multiple publications to a range of scientific venues. Frequent publication outlets include arXiv (Cornell University), Neuromorphic Computing and Engineering, Advanced Intelligent Systems, Review of Scientific Instruments, and PLoS Computational Biology.

Several recent papers exemplify the scope and focus of their work:

  • Tutorial on memristor-based computing for smart edge applications (2023, Memories - Materials Devices Circuits and Systems)
  • Reliability aspects of binary vector-matrix-multiplications using ReRAM devices (2022, Neuromorphic Computing and Engineering)
  • Current-limiting amplifier for high speed measurement of resistive switching data (2021, Review of Scientific Instruments)
  • A Voltage-Controlled, Oscillation-Based ADC Design for Computation-in-Memory Architectures Using Emerging ReRAMs (2022, ACM Journal on Emerging Technologies in Computing Systems)
  • Sequence learning, prediction, and replay in networks of spiking neurons (2022, PLoS Computational Biology)

Throughout their career, Wouters has frequently collaborated with a group of co-authors, including Rainer Waser, Stephan Menzel, Daniel Bedau, and Tyler Hennen. These collaborations suggest an ongoing engagement with teams active in materials engineering and neuromorphic computing research fields.

Best Publications

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

    Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu

  • Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

    Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano

  • Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

    Sergiu Clima;Dirk Wouters;Christoph Adelmann;Tony Schenk

  • Intrinsic switching variability in HfO 2 RRAM

    A. Fantini;L. Goux;R. Degraeve;D. J. Wouters

  • Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

    L. Goux;J. G. Lisoni;M. Jurczak;D. J. Wouters

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Phase-Change and Redox-Based Resistive Switching Memories

    Dirk J. Wouters;Rainer Waser;Matthias Wuttig

  • Subthreshold slope in thin-film SOI MOSFETs

    D.J. Wouters;J.-P. Colinge;H.E. Maes

  • Memristor based computation-in-memory architecture for data-intensive applications

    Said Hamdioui;Lei Xie;Hoang Anh Du Nguyen;Mottaqiallah Taouil

  • Characterization of front and back Si-SiO/sub 2/ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping technique

    D.J. Wouters;M.R. Tack;G.V. Groeseneken;H.E. Maes

  • Phase‐Change Memories

    Andrea L. Lacaita;Dirk J. Wouters

  • Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories

    F. Nardi;D. Ielmini;C. Cagli;S. Spiga

  • Preisach model for the simulation of ferroelectric capacitors

    Andrei T. Bartic;Dirk J. Wouters;Herman E. Maes;Jürgen T. Rickes

  • On the Gradual Unipolar and Bipolar Resistive Switching of TiN\ HfO2\Pt Memory Systems

    Ludovic Goux;Yang Yin Chen;Luigi Pantisano;Xin Peng Wang

  • Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices

    Wonjoo Kim;Stephan Menzel;Dirk J. Wouters;Yuzheng Guo

  • Improvement of data retention in HfO 2 /Hf 1T1R RRAM cell under low operating current

    Yang Yin Chen;Masanori Komura;Robin Degraeve;Bogdan Govoreanu

  • Dynamic ‘hour glass’ model for SET and RESET in HfO 2 RRAM

    R. Degraeve;A. Fantini;S. Clima;B. Govoreanu

  • Voltage shift and deformation in the hysteresis loop of Pb(Zr,Ti)O3 thin film by defects

    Eun Gu Lee;Dirk J. Wouters;Geert Willems;Herman E. Maes

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