World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
49
Citations
9081
World Ranking
2955
National Ranking
86

Materials Science

D-Index
48
Citations
9042
World Ranking
10806
National Ranking
603

Dirk Wouters publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Dirk Wouters sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 266 publications — 49th percentile

49% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Dirk Wouters D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Dirk Wouters sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 49 D-Index — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Dirk Wouters is affiliated with RWTH Aachen University in Germany and has a research portfolio spanning across several intersecting fields of study, including Engineering, Materials Science, and Neuroscience. Their work primarily focuses on Electrical and Electronic Engineering within these disciplines.

Their research addresses topics such as Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Transition Metal Oxide Nanomaterials, Neural dynamics and brain function, Semiconductor materials and devices, Neuroscience and Neural Engineering, and Photoreceptor and optogenetics research.

Wouters has contributed multiple publications to a range of scientific venues. Frequent publication outlets include arXiv (Cornell University), Neuromorphic Computing and Engineering, Advanced Intelligent Systems, Review of Scientific Instruments, and PLoS Computational Biology.

Several recent papers exemplify the scope and focus of their work:

  • Tutorial on memristor-based computing for smart edge applications (2023, Memories - Materials Devices Circuits and Systems)
  • Reliability aspects of binary vector-matrix-multiplications using ReRAM devices (2022, Neuromorphic Computing and Engineering)
  • Current-limiting amplifier for high speed measurement of resistive switching data (2021, Review of Scientific Instruments)
  • A Voltage-Controlled, Oscillation-Based ADC Design for Computation-in-Memory Architectures Using Emerging ReRAMs (2022, ACM Journal on Emerging Technologies in Computing Systems)
  • Sequence learning, prediction, and replay in networks of spiking neurons (2022, PLoS Computational Biology)

Throughout their career, Wouters has frequently collaborated with a group of co-authors, including Rainer Waser, Stephan Menzel, Daniel Bedau, and Tyler Hennen. These collaborations suggest an ongoing engagement with teams active in materials engineering and neuromorphic computing research fields.

Best Publications

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

    Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu

  • Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

    Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano

  • Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

    Sergiu Clima;Dirk Wouters;Christoph Adelmann;Tony Schenk

  • Intrinsic switching variability in HfO 2 RRAM

    A. Fantini;L. Goux;R. Degraeve;D. J. Wouters

  • Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

    L. Goux;J. G. Lisoni;M. Jurczak;D. J. Wouters

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Phase-Change and Redox-Based Resistive Switching Memories

    Dirk J. Wouters;Rainer Waser;Matthias Wuttig

  • Subthreshold slope in thin-film SOI MOSFETs

    D.J. Wouters;J.-P. Colinge;H.E. Maes

  • Memristor based computation-in-memory architecture for data-intensive applications

    Said Hamdioui;Lei Xie;Hoang Anh Du Nguyen;Mottaqiallah Taouil

  • Characterization of front and back Si-SiO/sub 2/ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping technique

    D.J. Wouters;M.R. Tack;G.V. Groeseneken;H.E. Maes

  • Phase‐Change Memories

    Andrea L. Lacaita;Dirk J. Wouters

  • Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories

    F. Nardi;D. Ielmini;C. Cagli;S. Spiga

  • Preisach model for the simulation of ferroelectric capacitors

    Andrei T. Bartic;Dirk J. Wouters;Herman E. Maes;Jürgen T. Rickes

  • On the Gradual Unipolar and Bipolar Resistive Switching of TiN\ HfO2\Pt Memory Systems

    Ludovic Goux;Yang Yin Chen;Luigi Pantisano;Xin Peng Wang

  • Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices

    Wonjoo Kim;Stephan Menzel;Dirk J. Wouters;Yuzheng Guo

  • Improvement of data retention in HfO 2 /Hf 1T1R RRAM cell under low operating current

    Yang Yin Chen;Masanori Komura;Robin Degraeve;Bogdan Govoreanu

  • Dynamic ‘hour glass’ model for SET and RESET in HfO 2 RRAM

    R. Degraeve;A. Fantini;S. Clima;B. Govoreanu

  • Voltage shift and deformation in the hysteresis loop of Pb(Zr,Ti)O3 thin film by defects

    Eun Gu Lee;Dirk J. Wouters;Geert Willems;Herman E. Maes

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