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Bogdan Govoreanu

Bogdan Govoreanu

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
7272
World Ranking
3592
National Ranking
79

Overview

Bogdan Govoreanu is affiliated with Imec in Belgium and specializes in engineering and physics with a focus on quantum and semiconductor technologies. Their research spans multiple interconnected fields, primarily electrical and electronic engineering, atomic and molecular physics and optics, artificial intelligence, materials chemistry, and condensed matter physics.

The main topics covered in Bogdan Govoreanu's work include:

  • Quantum and electron transport phenomena
  • Advancements in semiconductor devices and circuit design
  • Semiconductor materials and devices
  • Quantum information and cryptography
  • Quantum computing algorithms and architecture
  • Photonic and optical devices
  • Physics of superconductivity and magnetism

Their publication record reflects a significant contribution to the understanding of quantum device behavior and semiconductor technologies. Notable recent papers include:

  • Ovonic Threshold-Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles (2020), published in physica status solidi (RRL) - Rapid Research Letters
  • Multiplexed superconducting qubit control at millikelvin temperatures with a low-power cryo-CMOS multiplexer (2023), published in Nature Electronics
  • Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms (2022), published in npj Quantum Information
  • Low charge noise quantum dots with industrial CMOS manufacturing (2024), published in npj Quantum Information
  • Modeling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation (2023), published in Physical Review B

Frequent co-authors collaborating with Bogdan Govoreanu are:

  • Iuliana Radu
  • Massimo Mongillo
  • Danny Wan
  • Julien Jussot
  • Fahd A. Mohiyaddin

Publication venues where Bogdan Govoreanu features prominently include arXiv (Cornell University), IEEE Transactions on Electron Devices, the IEEE International Electron Devices Meeting (IEDM), IEEE Electron Device Letters, and npj Quantum Information. The blend of venues reflects a multidisciplinary approach encompassing both theoretical and applied research outputs.

Best Publications

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

    Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu

  • Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

    Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano

  • VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices

    B. Govoreanu;P. Blomme;M. Rosmeulen;J. Van Houdt

  • Intrinsic switching variability in HfO 2 RRAM

    A. Fantini;L. Goux;R. Degraeve;D. J. Wouters

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Te-based chalcogenide materials for selector applications.

    A Velea;K Opsomer;Wouter Devulder;Jan Dumortier

  • Causes and consequences of the stochastic aspect of filamentary RRAM

    R. Degraeve;A. Fantini;N. Raghavan;L. Goux

  • Improvement of data retention in HfO 2 /Hf 1T1R RRAM cell under low operating current

    Yang Yin Chen;Masanori Komura;Robin Degraeve;Bogdan Govoreanu

  • Trap Spectroscopy by Charge Injection and Sensing (TSCIS): A quantitative electrical technique for studying defects in dielectric stacks

    R. Degraeve;M. Cho;B. Govoreanu;B. Kaczer

  • Dynamic ‘hour glass’ model for SET and RESET in HfO 2 RRAM

    R. Degraeve;A. Fantini;S. Clima;B. Govoreanu

  • Understanding of the endurance failure in scaled HfO 2 -based 1T1R RRAM through vacancy mobility degradation

    Yang Yin Chen;Robin Degraeve;Sergiu Clima;Bogdan Govoreanu

  • Scaling down the interpoly dielectric for next generation Flash memory: Challenges and opportunities

    B. Govoreanu;D.P. Brunco;J. Van Houdt

  • Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell

    B. Govoreanu;A. Redolfi;L. Zhang;C. Adelmann

  • Investigation of microwave loss induced by oxide regrowth in high-Q Nb resonators

    J. Verjauw;A. Potočnik;M. Mongillo;R. Acharya

  • Ultralow sub-500nA operating current high-performance TiN\Al 2 O 3 \HfO 2 \Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering

    L. Goux;A. Fantini;G. Kar;Y.-Y. Chen

  • Two-Pulse $C$ – $V$ : A New Method for Characterizing Electron Traps in the Bulk of $ \hbox{SiO}_{2}/\hbox{high-}\kappa$ Dielectric Stacks

    W.D. Zhang;B. Govoreanu;X.F. Zheng;D. Ruiz Aguado

  • Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures

    A. Fantini;D. J. Wouters;R. Degraeve;L. Goux

  • Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability

    N. Raghavan;R. Degraeve;A. Fantini;L. Goux

  • Multilayer tunneling barriers for nonvolatile memory applications

    P. Blomme;B. Govoreanu;M. Rosmeulen;J. Van Houdt

  • Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current

    Yang Yin Chen;Masanori Komura;Robin Degraeve;Bogdan Govoreanu

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