World's Best Scientists 2026 revealed!
Bogdan Govoreanu

Bogdan Govoreanu

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
7272
World Ranking
3592
National Ranking
79

Bogdan Govoreanu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Bogdan Govoreanu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 218 publications — 35th percentile

35% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Bogdan Govoreanu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Bogdan Govoreanu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 45 D-Index — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Bogdan Govoreanu is affiliated with Imec in Belgium and specializes in engineering and physics with a focus on quantum and semiconductor technologies. Their research spans multiple interconnected fields, primarily electrical and electronic engineering, atomic and molecular physics and optics, artificial intelligence, materials chemistry, and condensed matter physics.

The main topics covered in Bogdan Govoreanu's work include:

  • Quantum and electron transport phenomena
  • Advancements in semiconductor devices and circuit design
  • Semiconductor materials and devices
  • Quantum information and cryptography
  • Quantum computing algorithms and architecture
  • Photonic and optical devices
  • Physics of superconductivity and magnetism

Their publication record reflects a significant contribution to the understanding of quantum device behavior and semiconductor technologies. Notable recent papers include:

  • Ovonic Threshold-Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles (2020), published in physica status solidi (RRL) - Rapid Research Letters
  • Multiplexed superconducting qubit control at millikelvin temperatures with a low-power cryo-CMOS multiplexer (2023), published in Nature Electronics
  • Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms (2022), published in npj Quantum Information
  • Low charge noise quantum dots with industrial CMOS manufacturing (2024), published in npj Quantum Information
  • Modeling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation (2023), published in Physical Review B

Frequent co-authors collaborating with Bogdan Govoreanu are:

  • Iuliana Radu
  • Massimo Mongillo
  • Danny Wan
  • Julien Jussot
  • Fahd A. Mohiyaddin

Publication venues where Bogdan Govoreanu features prominently include arXiv (Cornell University), IEEE Transactions on Electron Devices, the IEEE International Electron Devices Meeting (IEDM), IEEE Electron Device Letters, and npj Quantum Information. The blend of venues reflects a multidisciplinary approach encompassing both theoretical and applied research outputs.

Best Publications

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

    Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu

  • Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

    Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano

  • VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices

    B. Govoreanu;P. Blomme;M. Rosmeulen;J. Van Houdt

  • Intrinsic switching variability in HfO 2 RRAM

    A. Fantini;L. Goux;R. Degraeve;D. J. Wouters

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Te-based chalcogenide materials for selector applications.

    A Velea;K Opsomer;Wouter Devulder;Jan Dumortier

  • Causes and consequences of the stochastic aspect of filamentary RRAM

    R. Degraeve;A. Fantini;N. Raghavan;L. Goux

  • Improvement of data retention in HfO 2 /Hf 1T1R RRAM cell under low operating current

    Yang Yin Chen;Masanori Komura;Robin Degraeve;Bogdan Govoreanu

  • Trap Spectroscopy by Charge Injection and Sensing (TSCIS): A quantitative electrical technique for studying defects in dielectric stacks

    R. Degraeve;M. Cho;B. Govoreanu;B. Kaczer

  • Dynamic ‘hour glass’ model for SET and RESET in HfO 2 RRAM

    R. Degraeve;A. Fantini;S. Clima;B. Govoreanu

  • Understanding of the endurance failure in scaled HfO 2 -based 1T1R RRAM through vacancy mobility degradation

    Yang Yin Chen;Robin Degraeve;Sergiu Clima;Bogdan Govoreanu

  • Scaling down the interpoly dielectric for next generation Flash memory: Challenges and opportunities

    B. Govoreanu;D.P. Brunco;J. Van Houdt

  • Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell

    B. Govoreanu;A. Redolfi;L. Zhang;C. Adelmann

  • Investigation of microwave loss induced by oxide regrowth in high-Q Nb resonators

    J. Verjauw;A. Potočnik;M. Mongillo;R. Acharya

  • Ultralow sub-500nA operating current high-performance TiN\Al 2 O 3 \HfO 2 \Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering

    L. Goux;A. Fantini;G. Kar;Y.-Y. Chen

  • Two-Pulse $C$ – $V$ : A New Method for Characterizing Electron Traps in the Bulk of $ \hbox{SiO}_{2}/\hbox{high-}\kappa$ Dielectric Stacks

    W.D. Zhang;B. Govoreanu;X.F. Zheng;D. Ruiz Aguado

  • Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures

    A. Fantini;D. J. Wouters;R. Degraeve;L. Goux

  • Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability

    N. Raghavan;R. Degraeve;A. Fantini;L. Goux

  • Multilayer tunneling barriers for nonvolatile memory applications

    P. Blomme;B. Govoreanu;M. Rosmeulen;J. Van Houdt

  • Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current

    Yang Yin Chen;Masanori Komura;Robin Degraeve;Bogdan Govoreanu

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