World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
8484
World Ranking
2567
National Ranking
72

Materials Science

D-Index
52
Citations
8485
World Ranking
9662
National Ranking
426

Overview

Rino Choi is affiliated with Inha University in South Korea and specializes in research primarily within the fields of engineering and materials science. Their work spans several focused subfields, including electrical and electronic engineering, materials chemistry, biomedical engineering, atomic and molecular physics and optics, and electronic, optical, and magnetic materials.

Choi's research topics concentrate on semiconductor materials and devices, with a significant emphasis on ferroelectric and negative capacitance devices. Other key topics include thin-film transistor technologies, advanced memory and neural computing, MXene and MAX phase materials, ferroelectric and piezoelectric materials, as well as integrated circuits and semiconductor failure analysis.

Their publication record features numerous papers in notable venues such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Materials Science in Semiconductor Processing, SSRN Electronic Journal, and Nano Convergence, reflecting a consistent engagement with scholarly communication in these areas.

Highlighted recent papers by Choi include:

  • The role of NF-κB in breast cancer initiation, growth, metastasis, and resistance to chemotherapy, 2023, Biomedicine & Pharmacotherapy
  • Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing, 2021, IEEE Electron Device Letters
  • A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films, 2020, Materials
  • Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices, 2021, IEEE Electron Device Letters
  • Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source, 2020, Materials

Collaborations feature prominently in Choi's work, with frequent co-authors including Manh-Cuong Nguyen, Jiyoung Kim, Changhyeon Han, An Hoang-Thuy Nguyen, and Jiyong Yim.

Best Publications

  • The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors

    Kwang Hee Lee;Ji Sim Jung;Kyoung Seok Son;Joon Seok Park

  • Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

    Kwang Hwan Ji;Ji In Kim;Hong Yoon Jung;Se Yeob Park

  • Gate stack technology for nanoscale devices

    Byoung Hun Lee;Jungwoo Oh;Hsing Huang Tseng;Rajarao Jammy

  • Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics

    Chang Seok Kang;Hag Ju Cho;Katsunori Onishi;Renee Nieh

  • Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

    P. D. Kirsch;P. Sivasubramani;J. Huang;C. D. Young

  • The effect of interfacial layer properties on the performance of Hf-based gate stack devices

    G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght

  • Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

    Young Gon Lee;Chang Goo Kang;Uk Jin Jung;Jin Ju Kim

  • Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs

    K. Onishi;Rino Choi;Chang Seok Kang;Hag-Ju Cho

  • MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics

    L. Kang;K. Onishi;Y. Jeon;Byoung Hun Lee

  • A capacitance-based methodology for work function extraction of metals on high-/spl kappa/

    R. Jha;J. Gurganos;Y.H. Kim;R. Choi

  • The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor

    Jang Yeon Kwon;Ji Sim Jung;Kyoung Seok Son;Kwang Hee Lee

  • Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks

    G. Bersuker;J. Sim;Chang Seo Park;C. Young

  • The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode

    Chang Seok Kang;Hag-Ju Cho;Rino Choi;Young-Hee Kim

  • Improvement of surface carrier mobility of HfO/sub 2/ MOSFETs by high-temperature forming gas annealing

    K. Onishi;Chang Seok Kang;Rino Choi;Hag-Ju Cho

  • Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications

    Chang Seok Kang;H.-J. Cho;Y. H. Kim;R. Choi

  • Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 /spl Aring/-12 /spl Aring/)

    Byoung Hun Lee;R. Choi;L. Kang;S. Gopalan

  • High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH3 post-deposition anneal

    Mohammad Shahariar Akbar;S. Gopalan;H.-J. Cho;K. Onishi

  • Radiation Induced Charge Trapping in Ultrathin ${ m HfO}_{2}$ -Based MOSFETs

    S.K. Dixit;X.J. Zhou;R.D. Schrimpf;D.M. Fleetwood

  • High-quality ultra-thin HfO/sub 2/ gate dielectric MOSFETs with TaN electrode and nitridation surface preparation

    Rino Choi;Chang Seok Kang;Byoung Hun Lee;K. Onishi

  • Metal Electrode/High- $k$ Dielectric Gate-Stack Technology for Power Management

    Byoung Hun Lee;Seung Chul Song;Seung Chul Song;Rino Choi;Rino Choi;P. Kirsch

  • Electron trap generation in high-/spl kappa/ gate stacks by constant voltage stress

    C.D. Young;D. Heh;S.V. Nadkarni;Rino Choi

Frequent Co-Authors

Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Paul Kirsch
Paul Kirsch Samsung Austin Semiconductor
Jae Kyeong Jeong
Jae Kyeong Jeong Hanyang University
Prashant Majhi
Prashant Majhi Intel (United States)
Jack C. Lee
Jack C. Lee The University of Texas at Austin
Hyunsang Hwang
Hyunsang Hwang Pohang University of Science and Technology
Muhammad Mustafa Hussain
Muhammad Mustafa Hussain Purdue University West Lafayette
Manuel Quevedo-Lopez
Manuel Quevedo-Lopez The University of Texas at Dallas
Hoichang Yang
Hoichang Yang Inha University

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