D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 41 Citations 5,550 208 World Ranking 1761 National Ranking 47
Materials Science D-index 48 Citations 6,682 240 World Ranking 6327 National Ranking 270

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • MOSFET

His scientific interests lie mostly in Optoelectronics, Dielectric, Gate dielectric, High-κ dielectric and Annealing. His research in Optoelectronics intersects with topics in Transistor, MOSFET, Electrical engineering and Thin-film transistor. His Dielectric research incorporates themes from Threshold voltage, Electronic engineering and Analytical chemistry.

His studies deal with areas such as Capacitance, Equivalent oxide thickness and Thermal stability as well as Gate dielectric. His High-κ dielectric research includes elements of Electron mobility and Current. His Annealing research is multidisciplinary, incorporating perspectives in Tantalum nitride, Tin and NMOS logic.

His most cited work include:

  • The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors (252 citations)
  • Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors (212 citations)
  • Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics (151 citations)

What are the main themes of his work throughout his whole career to date?

Rino Choi mainly investigates Optoelectronics, Dielectric, MOSFET, High-κ dielectric and Gate dielectric. Rino Choi has researched Optoelectronics in several fields, including Metal gate, Threshold voltage, Transistor, Electronic engineering and Electrical engineering. Rino Choi interconnects Tin, Electron mobility, Equivalent oxide thickness and Analytical chemistry in the investigation of issues within Dielectric.

His work carried out in the field of MOSFET brings together such families of science as Field-effect transistor, Annealing, NMOS logic and PMOS logic. His High-κ dielectric research is multidisciplinary, relying on both Relaxation, Transient and Dielectric strength, Voltage. His study in Gate dielectric is interdisciplinary in nature, drawing from both Capacitance, Permittivity, Gate oxide and Leakage.

He most often published in these fields:

  • Optoelectronics (68.04%)
  • Dielectric (44.33%)
  • MOSFET (36.77%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (68.04%)
  • Thin-film transistor (13.40%)
  • Annealing (18.56%)

In recent papers he was focusing on the following fields of study:

Rino Choi mainly focuses on Optoelectronics, Thin-film transistor, Annealing, Analytical chemistry and Thin film. Rino Choi has included themes like Layer, OLED, Passivation and Transistor in his Optoelectronics study. His Thin-film transistor research includes themes of Threshold voltage, Solution process, Doping and Dielectric.

His Dielectric research is multidisciplinary, incorporating elements of Gate dielectric and MOSFET. The Annealing study combines topics in areas such as Oxide, Silicon, Tin, Copper and Chemical engineering. The concepts of his Analytical chemistry study are interwoven with issues in Field-effect transistor, Forming gas and Polysilicon depletion effect.

Between 2015 and 2021, his most popular works were:

  • Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor. (22 citations)
  • High Performance Metal Oxide Field-Effect Transistors with a Reverse Offset Printed Cu Source/Drain Electrode (18 citations)
  • Performance Improvement of p-Channel Tin Monoxide Transistors With a Solution-Processed Zirconium Oxide Gate Dielectric (15 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Electrical engineering

Rino Choi focuses on Thin-film transistor, Thin film, Analytical chemistry, Optoelectronics and Annealing. The various areas that Rino Choi examines in his Thin-film transistor study include Threshold voltage, Pulse and Dielectric. Rino Choi works mostly in the field of Threshold voltage, limiting it down to topics relating to Field effect and, in certain cases, Semiconductor, as a part of the same area of interest.

The study incorporates disciplines such as Solution process and Indium in addition to Analytical chemistry. His Optoelectronics study integrates concerns from other disciplines, such as Transistor and Material properties. His Annealing study combines topics from a wide range of disciplines, such as Oxide, Tin and Nanotechnology.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors

Kwang Hee Lee;Ji Sim Jung;Kyoung Seok Son;Joon Seok Park.
Applied Physics Letters (2009)

329 Citations

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

Kwang Hwan Ji;Ji In Kim;Hong Yoon Jung;Se Yeob Park.
Applied Physics Letters (2011)

255 Citations

Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics

Chang Seok Kang;Hag Ju Cho;Katsunori Onishi;Renee Nieh.
Applied Physics Letters (2002)

229 Citations

The effect of interfacial layer properties on the performance of Hf-based gate stack devices

G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght.
Journal of Applied Physics (2006)

188 Citations

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

P. D. Kirsch;P. Sivasubramani;J. Huang;C. D. Young.
Applied Physics Letters (2008)

182 Citations

Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs

K. Onishi;Rino Choi;Chang Seok Kang;Hag-Ju Cho.
IEEE Transactions on Electron Devices (2003)

163 Citations

Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

Young Gon Lee;Chang Goo Kang;Uk Jin Jung;Jin Ju Kim.
Applied Physics Letters (2011)

156 Citations

MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics

L. Kang;K. Onishi;Y. Jeon;Byoung Hun Lee.
international electron devices meeting (2000)

152 Citations

A capacitance-based methodology for work function extraction of metals on high-/spl kappa/

R. Jha;J. Gurganos;Y.H. Kim;R. Choi.
IEEE Electron Device Letters (2004)

139 Citations

The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor

Jang Yeon Kwon;Ji Sim Jung;Kyoung Seok Son;Kwang Hee Lee.
Applied Physics Letters (2010)

130 Citations

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