World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
8484
World Ranking
2567
National Ranking
72

Materials Science

D-Index
52
Citations
8485
World Ranking
9660
National Ranking
426

Rino Choi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Rino Choi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 309 publications — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Rino Choi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Rino Choi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 52 D-Index — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Rino Choi is affiliated with Inha University in South Korea and specializes in research primarily within the fields of engineering and materials science. Their work spans several focused subfields, including electrical and electronic engineering, materials chemistry, biomedical engineering, atomic and molecular physics and optics, and electronic, optical, and magnetic materials.

Choi's research topics concentrate on semiconductor materials and devices, with a significant emphasis on ferroelectric and negative capacitance devices. Other key topics include thin-film transistor technologies, advanced memory and neural computing, MXene and MAX phase materials, ferroelectric and piezoelectric materials, as well as integrated circuits and semiconductor failure analysis.

Their publication record features numerous papers in notable venues such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Materials Science in Semiconductor Processing, SSRN Electronic Journal, and Nano Convergence, reflecting a consistent engagement with scholarly communication in these areas.

Highlighted recent papers by Choi include:

  • The role of NF-κB in breast cancer initiation, growth, metastasis, and resistance to chemotherapy, 2023, Biomedicine & Pharmacotherapy
  • Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing, 2021, IEEE Electron Device Letters
  • A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films, 2020, Materials
  • Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices, 2021, IEEE Electron Device Letters
  • Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source, 2020, Materials

Collaborations feature prominently in Choi's work, with frequent co-authors including Manh-Cuong Nguyen, Jiyoung Kim, Changhyeon Han, An Hoang-Thuy Nguyen, and Jiyong Yim.

Best Publications

  • The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors

    Kwang Hee Lee;Ji Sim Jung;Kyoung Seok Son;Joon Seok Park

  • Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

    Kwang Hwan Ji;Ji In Kim;Hong Yoon Jung;Se Yeob Park

  • Gate stack technology for nanoscale devices

    Byoung Hun Lee;Jungwoo Oh;Hsing Huang Tseng;Rajarao Jammy

  • Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics

    Chang Seok Kang;Hag Ju Cho;Katsunori Onishi;Renee Nieh

  • Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

    P. D. Kirsch;P. Sivasubramani;J. Huang;C. D. Young

  • The effect of interfacial layer properties on the performance of Hf-based gate stack devices

    G. Bersuker;C. S. Park;J. Barnett;P. S. Lysaght

  • Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

    Young Gon Lee;Chang Goo Kang;Uk Jin Jung;Jin Ju Kim

  • Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs

    K. Onishi;Rino Choi;Chang Seok Kang;Hag-Ju Cho

  • MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics

    L. Kang;K. Onishi;Y. Jeon;Byoung Hun Lee

  • A capacitance-based methodology for work function extraction of metals on high-/spl kappa/

    R. Jha;J. Gurganos;Y.H. Kim;R. Choi

  • The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor

    Jang Yeon Kwon;Ji Sim Jung;Kyoung Seok Son;Kwang Hee Lee

  • Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks

    G. Bersuker;J. Sim;Chang Seo Park;C. Young

  • The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode

    Chang Seok Kang;Hag-Ju Cho;Rino Choi;Young-Hee Kim

  • Improvement of surface carrier mobility of HfO/sub 2/ MOSFETs by high-temperature forming gas annealing

    K. Onishi;Chang Seok Kang;Rino Choi;Hag-Ju Cho

  • Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications

    Chang Seok Kang;H.-J. Cho;Y. H. Kim;R. Choi

  • Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 /spl Aring/-12 /spl Aring/)

    Byoung Hun Lee;R. Choi;L. Kang;S. Gopalan

  • High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH3 post-deposition anneal

    Mohammad Shahariar Akbar;S. Gopalan;H.-J. Cho;K. Onishi

  • Radiation Induced Charge Trapping in Ultrathin ${ m HfO}_{2}$ -Based MOSFETs

    S.K. Dixit;X.J. Zhou;R.D. Schrimpf;D.M. Fleetwood

  • High-quality ultra-thin HfO/sub 2/ gate dielectric MOSFETs with TaN electrode and nitridation surface preparation

    Rino Choi;Chang Seok Kang;Byoung Hun Lee;K. Onishi

  • Metal Electrode/High- $k$ Dielectric Gate-Stack Technology for Power Management

    Byoung Hun Lee;Seung Chul Song;Seung Chul Song;Rino Choi;Rino Choi;P. Kirsch

  • Electron trap generation in high-/spl kappa/ gate stacks by constant voltage stress

    C.D. Young;D. Heh;S.V. Nadkarni;Rino Choi

Frequent Co-Authors

Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Paul Kirsch
Paul Kirsch Samsung Austin Semiconductor
Jae Kyeong Jeong
Jae Kyeong Jeong Hanyang University
Prashant Majhi
Prashant Majhi Intel (United States)
Jack C. Lee
Jack C. Lee The University of Texas at Austin
Hyunsang Hwang
Hyunsang Hwang Pohang University of Science and Technology
Muhammad Mustafa Hussain
Muhammad Mustafa Hussain Purdue University West Lafayette
Manuel Quevedo-Lopez
Manuel Quevedo-Lopez The University of Texas at Dallas
Hoichang Yang
Hoichang Yang Inha University

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Related Online Degrees & Career Pathways

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Beyond engineering and project management, exploring programs like instructional design can open pathways into corporate training or educational technology roles, complementing technical expertise with skills in curriculum development and e-learning systems.

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