World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
57
Citations
12113
World Ranking
1977
National Ranking
774

Materials Science

D-Index
58
Citations
12322
World Ranking
7675
National Ranking
1907

Overview

Jack C. Lee is affiliated with The University of Texas at Austin in the United States. Their primary research contributions lie in the areas of Engineering and Materials Science, with a focused engagement in subfields such as Electrical and Electronic Engineering, Materials Chemistry, Cellular and Molecular Neuroscience, Organic Chemistry, and Infectious Diseases. The scientist's work spans interdisciplinary topics encompassing Advanced Memory and Neural Computing, 2D Materials and Applications, Ferroelectric and Negative Capacitance Devices, Neuroscience and Neural Engineering, MXene and MAX Phase Materials, Transition Metal Oxide Nanomaterials, and Semiconductor materials and devices.

Lee has published extensively, with notable frequent publication venues including The Cambridge Structural Database, Advanced Intelligent Systems, ACS Catalysis, IEEE Transactions on Electron Devices, and Science.

Among their recent papers are:

  • An oral SARS-CoV-2 M pro inhibitor clinical candidate for the treatment of COVID-19, 2021, Science
  • Complementary Metal-Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing, 2020, Advanced Intelligent Systems
  • Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems, 2020, Nature Electronics
  • A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon, 2020, Advanced Materials
  • Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices, 2022, npj 2D Materials and Applications

Frequent coauthors that have collaborated with Lee include:

  • Deji Akinwande (16 publications)
  • Ruijing Ge (12 publications)
  • Xiaohan Wu (11 publications)
  • Yifu Huang (10 publications)
  • Ying-Chen Chen (9 publications)

Best Publications

  • Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

    Byoung Hun Lee;Laegu Kang;Renee Nieh;Wen Jie Qi

  • Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides.

    Ruijing Ge;Xiaohan Wu;Myungsoo Kim;Jianping Shi

  • Modeling and characterization of gate oxide reliability

    J.C. Lee;Chen Ih-Chin;Hu Chenming

  • A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst

    Li Ji;Martin D. Mcdaniel;Shijun Wang;Agham-Bayan S Posadas

  • Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)

    P. D. Kirsch;C. S. Kang;J. Lozano;J. C. Lee

  • Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

    Hyunsang Hwang;Wenchi Ting;Bikas Maiti;Dim Lee Kwong

  • Thinnest Nonvolatile Memory Based on Monolayer h-BN.

    Xiaohan Wu;Ruijing Ge;Po An Chen;Po An Chen;Harry Chou

  • MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si

    Wen-Jie Qi;Renee Nieh;Laegu Kang;Yongjoo Jeon

  • Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

    Wen Jie Qi;Renee Nieh;Byoung Hun Lee;Laegu Kang

  • Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics

    Chang Seok Kang;Hag Ju Cho;Katsunori Onishi;Renee Nieh

  • Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties

    Yong J. Cho;Nhan V. Nguyen;Curt A. Richter;James R. Ehrstein

  • Zero-static power radio-frequency switches based on MoS 2 atomristors.

    Myungsoo Kim;Ruijing Ge;Xiaohan Wu;Xing Lan

  • Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon

    Byoung Hun Lee;Yongjoo Jeon;Keith Zawadzki;Wen Jie Qi

  • Temperature acceleration of time-dependent dielectric breakdown

    R. Moazzami;J.C. Lee;C. Hu

  • A model for electrical conduction in metal‐ferroelectric‐metal thin‐film capacitors

    C. Sudhama;A. C. Campbell;P. D. Maniar;R. E. Jones

  • Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application

    Wen Jie Qi;Renee Nieh;Easwar Dharmarajan;Byoung Hun Lee

  • MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics

    L. Kang;K. Onishi;Y. Jeon;Byoung Hun Lee

  • Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N/sub 2/O

    H. Hwang;W. Ting;D.-L. Kwong;J. Lee

  • Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism

    Anthony I. Chou;Kafai Lai;Kiran Kumar;Prasenjit Chowdhury;Prasenjit Chowdhury

  • Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing

    Mostafa Rahimi Azghadi;Ying-Chen Chen;Jason K. Eshraghian;Jia Chen

  • Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications

    Chang Seok Kang;H.-J. Cho;Y. H. Kim;R. Choi

Frequent Co-Authors

Yao-Feng Chang
Yao-Feng Chang The University of Texas at Austin
Rino Choi
Rino Choi Inha University
Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Jiyoung Kim
Jiyoung Kim The University of Texas at Dallas
Deji Akinwande
Deji Akinwande The University of Texas at Austin
Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University
Hyunsang Hwang
Hyunsang Hwang Pohang University of Science and Technology
Sungjun Kim
Sungjun Kim Dongguk University
Paul Kirsch
Paul Kirsch Samsung Austin Semiconductor

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