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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
10973
World Ranking
3039
National Ranking
1144

Overview

Evgeni Gusev is affiliated with Qualcomm in the United States and has a research portfolio primarily focused on medical and neuroscience fields. Their work covers significant topics related to inflammation, infectious diseases, and molecular biology with a substantial emphasis on COVID-19 and its long-term effects.

Their notable recent papers include:

  • SARS-CoV-2-Specific Immune Response and the Pathogenesis of COVID-19, 2022, International Journal of Molecular Sciences
  • Atherosclerosis and Inflammation: Insights from the Theory of General Pathological Processes, 2023, International Journal of Molecular Sciences
  • Inflammation: A New Look at an Old Problem, 2022, International Journal of Molecular Sciences
  • The Pathogenesis of End-Stage Renal Disease from the Standpoint of the Theory of General Pathological Processes of Inflammation, 2021, International Journal of Molecular Sciences

The main fields of study for Evgeni Gusev include:

  • Medicine
  • Neuroscience

Their subfields of study cover:

  • Neurology
  • Infectious Diseases
  • Immunology
  • Epidemiology
  • Molecular Biology

The primary topics that feature in their research are:

  • Long-Term Effects of COVID-19
  • Inflammasome and immune disorders
  • Stress Responses and Cortisol
  • COVID-19 Clinical Research Studies
  • Neuroinflammation and Neurodegeneration Mechanisms
  • SARS-CoV-2 and COVID-19 Research
  • Adipokines, Inflammation, and Metabolic Diseases

Evgeni Gusev frequently publishes in journals such as:

  • International Journal of Molecular Sciences
  • Medical Immunology (Russia)
  • Pathophysiology
  • Biology
  • Russian Journal of Immunology

The scientist collaborates regularly with several coauthors including:

  • Alexey Sarapultsev
  • Maria Komelkova
  • В. А. Черешнев
  • Desheng Hu
  • Yulia A. Zhuravleva

Evgeni Gusev's work includes contributions to understanding the mechanisms of inflammation and immune response, especially in relation to COVID-19 and chronic disease processes. Their research approach integrates pathological theories on inflammation, metabolic diseases, and neurological disorders to advance knowledge in medicine and molecular biology.

Best Publications

  • Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

    M. L. Green;E. P. Gusev;R. Degraeve;Eric Garfunkel

  • Structure and stability of ultrathin zirconium oxide layers on Si(001)

    M. Copel;M. Gribelyuk;E. Gusev

  • High-resolution depth profiling in ultrathin Al2O3 films on Si

    E. P. Gusev;M. Copel;E. Cartier;I. J. R. Baumvol

  • Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

    E.P Gusev;E Cartier;D.A Buchanan;M Gribelyuk

  • Intermixing at the tantalum oxide/silicon interface in gate dielectric structures

    G. B. Alers;D. J. Werder;Y. Chabal;H. C. Lu

  • Ultrathin high-K gate stacks for advanced CMOS devices

    E.P. Gusev;D.A. Buchanan;E. Cartier;A. Kumar

  • Ultrathin HfO 2 films grown on Silicon by atomic layer deposition for advanced gate dielectrics applications

    E. P. Gusev;C. Cabral;M. Copel;C. D'Emic

  • Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks

    Sufi Zafar;Alessandro Callegari;Evgeni Gusev;Massimo V. Fischetti

  • Advanced high-κ dielectric stacks with polySi and metal gates: recent progress and current challenges

    E. P. Gusev;V. Narayanan;M. M. Frank

  • Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks

    S. Zafar;A. Kumar;E. Gusev;E. Cartier

  • High performance CMOS fabricated on hybrid substrate with different crystal orientations

    M. Yang;M. Ieong;L. Shi;K. Chan

  • Growth and characterization of ultrathin nitrided silicon oxide films

    E. P. Gusev;H.-C. Lu;E. L. Garfunkel;T. Gustafsson

  • Germanium channel MOSFETs: opportunities and challenges

    H. Shang;M. M. Frank;E. P. Gusev;J. O. Chu

  • Hybrid-orientation technology (HOT): opportunities and challenges

    Min Yang;V.W.C. Chan;K.K. Chan;L. Shi

  • Field effect devices and capacitors with improved thin film dielectrics and method for making same

    Daniel Brasen;Eric L. Garfunkel;Martin L. Green;Evgeni Petrovich Gusev

  • 80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/ gate dielectric for ULSI applications

    D.A. Buchanan;E.P. Gusev;E. Cartier;H. Okorn-Schmidt

  • Robustness of ultrathin aluminum oxide dielectrics on Si(001)

    M. Copel;E. Cartier;E. P. Gusev;S. Guha

  • Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO 2 gate dielectrics

    Min Yang;E.P. Gusev;Meikei Ieong;O. Gluschenkov

  • Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100)

    E. P. Gusev;H. Shang;M. Copel;M. Gribelyuk

  • Effects of radiation and charge trapping on the reliability of high-κ gate dielectrics

    J. A. Felix;J. R. Schwank;Daniel M. Fleetwood;M. R. Shaneyfelt

  • Threshold Voltage Instabilities in High- Gate Dielectric Stacks

    Sufi Zafar;Arvind Kumar;Evgeni Gusev;E. Cartier

Frequent Co-Authors

Matthew Copel
Matthew Copel IBM (United States)
Sufi Zafar
Sufi Zafar IBM (United States)
Eduard A. Cartier
Eduard A. Cartier IBM (United States)
Martin L. Green
Martin L. Green National Institute of Standards and Technology
Vijay Narayanan
Vijay Narayanan IBM (United States)
Cyril Cabral
Cyril Cabral IBM (United States)
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Supratik Guha
Supratik Guha Argonne National Laboratory
Douglas A. Buchanan
Douglas A. Buchanan University of Manitoba
Meikei Ieong
Meikei Ieong Simbury Limited

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