2026 Matthew Copel: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	68	4869	4713	1290	1211	206	16204

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

4869

4713

1290

1211

206

16204

Overview

Matthew Copel is affiliated with IBM in the United States and has published research primarily in materials science and related fields. They have contributed to multiple areas including semiconductor materials and devices, transition metal oxide nanomaterials, and the electronic and structural properties of oxides.

Their recent publications span various scientific journals, showcasing a focus on materials chemistry and engineering. Selected papers include:

Atomic Layer Deposition of Tungsten Oxide Using Nitrogen Dioxide: A Comparative Study with Other Oxygen Sources (2021, Chemistry of Materials)
The future of MRS Governance (2020, MRS Bulletin)
Hot topics provide value to MRS membership and the materials community (2020, MRS Bulletin)
Navigating unprecedented times (2020, MRS Bulletin)
Pioneering a new publishing model (2020, MRS Bulletin)

Frequent publication venues for their work include:

Journal of materials research/Pratt's guide to venture capital sources
MRS Bulletin
MRS Communications
Chemistry of Materials

They have collaborated extensively with several co-authors, with frequent partnerships including:

Todd Osman
M. R. Fitzsimmons
Cherie R. Kagan
Griselda Bonilla
L. J. Brillson

Their research covers the following specific topics:

Semiconductor materials and devices
Transition Metal Oxide Nanomaterials
Electronic and Structural Properties of Oxides

Subfields of study associated with their publications include:

Electrical and Electronic Engineering
Polymers and Plastics
Materials Chemistry

Best Publications

Surfactants in epitaxial growth.

M. Copel;M. C. Reuter;Efthimios Kaxiras;R. M. Tromp

1445
Citations
Structure and stability of ultrathin zirconium oxide layers on Si(001)

M. Copel;M. Gribelyuk;E. Gusev

964
Citations
High-mobility ultrathin semiconducting films prepared by spin coating

David B. Mitzi;Laura L. Kosbar;Conal E. Murray;Matthew Copel

647
Citations
High-resolution depth profiling in ultrathin Al2O3 films on Si

E. P. Gusev;M. Copel;E. Cartier;I. J. R. Baumvol

596
Citations
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

E.P Gusev;E Cartier;D.A Buchanan;M Gribelyuk

520
Citations
Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics

S. Guha;E. Cartier;M. A. Gribelyuk;N. A. Bojarczuk

431
Citations
Influence of surfactants in Ge and Si epitaxy on Si(001).

M. Copel;M. C. Reuter;M. Horn von Hoegen;R. M. Tromp

407
Citations
Ultrathin high-K gate stacks for advanced CMOS devices

E.P. Gusev;D.A. Buchanan;E. Cartier;A. Kumar

395
Citations
Ultrathin HfO 2 films grown on Silicon by atomic layer deposition for advanced gate dielectrics applications

E. P. Gusev;C. Cabral;M. Copel;C. D'Emic

393
Citations
Band alignment at the Cu2ZnSn(SxSe1−x)4/CdS interface

Richard Haight;Aaron Barkhouse;Oki Gunawan;Byungha Shin

363
Citations
Defect self-annihilation in surfactant-mediated epitaxial growth.

M. Horn-Von Hoegen;F. K. Legoues;M. Copel;M. C. Reuter

322
Citations
Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)

M. Copel;E. Cartier;F. M. Ross

308
Citations
Microstructure and strain relief of Ge films grown layer by layer on Si(001).

F. K. LeGoues;M. Copel;R. M. Tromp

279
Citations
Structure of Au(110) determined with medium-energy-ion scattering.

M. Copel;T. Gustafsson

202
Citations
Defects in Cu(In,Ga)Se2 Chalcopyrite Semiconductors: A Comparative Study of Material Properties, Defect States, and Photovoltaic Performance

Qing Cao;Oki Gunawan;Matthew Copel;Kathleen B. Reuter

197
Citations
Highly Efficient Fluorescence Quenching with Graphene

Amal Kasry;Amal Kasry;Ali A. Ardakani;George S. Tulevski;Bernhard Menges

185
Citations
Ultrathin Al/sub 2/O/sub 3/ and HfO/sub 2/ gate dielectrics on surface-nitrided Ge

James Jer-Hueih Chen;N.A. Bojarezuk;Huiling Shang;M. Copel

184
Citations
80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/ gate dielectric for ULSI applications

D.A. Buchanan;E.P. Gusev;E. Cartier;H. Okorn-Schmidt

181
Citations
Novel strain-induced defect in thin molecular-beam epitaxy layers.

F. K. LeGoues;M. Copel;R. Tromp

181
Citations
Robustness of ultrathin aluminum oxide dielectrics on Si(001)

M. Copel;E. Cartier;E. P. Gusev;S. Guha

180
Citations
H coverage dependence of Si(001) homoepitaxy.

Copel M;Tromp Rm

179
Citations