Martin M. Frank

Overview

Best Publications

• High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

  S. Bangsaruntip;G. M. Cohen;A. Majumdar;Y. Zhang

  526
  Citations

• HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

  Martin M. Frank;Glen D. Wilk;Dmitri Starodub;Torgny Gustafsson

  458
  Citations

• Advanced high-κ dielectric stacks with polySi and metal gates: recent progress and current challenges

  E. P. Gusev;V. Narayanan;M. M. Frank

  382
  Citations

• Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode

  Catherine Dubourdieu;John Bruley;Thomas M. Arruda;Agham Posadas

  310
  Citations

• Absence of magnetism in hafnium oxide films

  David W. Abraham;Martin M. Frank;Supratik Guha

  273
  Citations

• Germanium channel MOSFETs: opportunities and challenges

  H. Shang;M. M. Frank;E. P. Gusev;J. O. Chu

  248
  Citations

• Metallic Contact Formation for Molecular Electronics : Interactions between Vapor-Deposited Metals and Self-Assembled Monolayers of Conjugated Mono- and Dithiols

  Bert de Boer;Bert de Boer;Martin M. Frank;Martin M. Frank;Yves J. Chabal;Weirong Jiang

  245
  Citations

• From atoms to crystallites: adsorption on oxide-supported metal particles

  Martin Frank;Marcus Bäumer

  227
  Citations

• Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides

  Martin M. Frank;Yves J. Chabal;Glen D. Wilk

  203
  Citations

• Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon

  N. V. Nguyen;Albert V. Davydov;Deane Chandler-Horowitz;Martin M. Frank

  190
  Citations

• Hafnium oxide gate dielectrics on sulfur-passivated germanium

  Martin M. Frank;Steven J. Koester;Matthew Copel;John A. Ott

  175
  Citations

• Synthesis and Characterization of Conjugated Mono- and Dithiol Oligomers and Characterization of Their Self-Assembled Monolayers

  Bert de Boer;Hong Meng;Dmitrii F. Perepichka;Jie Zheng

  174
  Citations

• High- $\kappa$ /Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

  M.H. Khater;Zhen Zhang;Jin Cai;C. Lavoie

  167
  Citations

• Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

  Martin M. Frank;Yves Jean Chabal;Martin L. Green;Annelies Delabie

  158
  Citations

• Interaction of rhodium with hydroxylated alumina model substrates

  J. Libuda;M. Frank;A. Sandell;S. Andersson

  142
  Citations

• Surface reactivity of Pd nanoparticles supported on polycrystalline substrates as compared to thin film model catalysts: Infrared study of CO adsorption

  Serena Bertarione;Domenica Scarano;Adriano Zecchina;Viktor Johánek

  141
  Citations

• SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOLTAGE CONTROL IN CMOS DEVICE FABRICATION WITH HIGH-k DIELECTRICS

  Nestor A. Bojarczuk;Cyril Cabral;Eduard A. Cartier;Matthew W. Copel

  128
  Citations

• A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

  S. Krishnan;U. Kwon;N. Moumen;M.W. Stoker

  125
  Citations

• Fundamental aspects of HfO 2 -based high-k metal gate stack reliability and implications on t inv -scaling

  E. Cartier;A. Kerber;T. Ando;M. M. Frank

  121
  Citations

• Understanding mobility mechanisms in extremely scaled HfO 2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t -tuning dipoles with gate-first process

  T. Ando;M. M. Frank;K. Choi;C. Choi

  112
  Citations

• High-k / metal gate innovations enabling continued CMOS scaling

  Martin M. Frank

  111
  Citations