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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 42 12548 12137 2875 2674 153 7041

Martin M. Frank publications per year

The chart shows the history of publications by Martin M. Frank between 1983 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Martin M. Frank published across 43 years, from 1983 to 2025, averaging 4.1 papers a year. Output peaked at 16 publications in 2006. 8 of the 175 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1983 to 2025. Vertical axis: number of publications, 0 to 16. Peak 16 publications in 2006. 1983: 1 publication 1984: 0 publications 1985: 0 publications 1986: 0 publications 1987: 0 publications 1988: 0 publications 1989: 0 publications 1990: 0 publications 1991: 1 publication 1992: 0 publications 1993: 0 publications 1994: 2 publications 1995: 0 publications 1996: 2 publications 1997: 3 publications 1998: 3 publications 1999: 4 publications 2000: 5 publications 2001: 4 publications 2002: 3 publications 2003: 7 publications 2004: 7 publications 2005: 10 publications 2006: 16 publications 2007: 9 publications 2008: 7 publications 2009: 8 publications 2010: 11 publications 2011: 12 publications 2012: 4 publications 2013: 3 publications 2014: 11 publications 2015: 3 publications 2016: 7 publications 2017: 4 publications 2018: 5 publications 2019: 1 publication 2020: 1 publication 2021: 5 publications 2022: 4 publications 2023: 4 publications 2024: 4 publications 2025: 4 publications
1983 2025

175 publications in total across all disciplines

View publications per year as a table
Martin M. Frank: publications per year, 1983 to 2025
Year Publications
1983 1
1984 0
1985 0
1986 0
1987 0
1988 0
1989 0
1990 0
1991 1
1992 0
1993 0
1994 2
1995 0
1996 2
1997 3
1998 3
1999 4
2000 5
2001 4
2002 3
2003 7
2004 7
2005 10
2006 16
2007 9
2008 7
2009 8
2010 11
2011 12
2012 4
2013 3
2014 11
2015 3
2016 7
2017 4
2018 5
2019 1
2020 1
2021 5
2022 4
2023 4
2024 4
2025 4
Total 175
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Martin M. Frank publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Martin M. Frank sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 150–169 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 153 publications — 15th percentile

15% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835 153
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Martin M. Frank D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Martin M. Frank sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 42–43 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 42 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450 42
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Martin M. Frank is affiliated with IBM in the United States and has contributed extensively to the field of engineering, with a primary focus on electrical and electronic engineering. Their research spans several interconnected subfields including materials chemistry, computer networks and communications, cellular and molecular neuroscience, and hardware architecture.

The researcher's work centers around topics such as:

  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advanced Data Storage Technologies
  • Distributed and Parallel Computing Systems
  • Electronic and Structural Properties of Oxides

Martin M. Frank has published multiple research papers, including:

  • "A Heterogeneous and Programmable Compute-In-Memory Accelerator Architecture for Analog-AI Using Dense 2-D Mesh," 2022, IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • "Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization," 2022, 2022 International Electron Devices Meeting (IEDM)
  • "Identification of structural phases in ferroelectric hafnium zirconium oxide by density-functional-theory-assisted EXAFS analysis," 2021, Applied Physics Letters
  • "Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy," 2021, IEEE Electron Device Letters
  • "Crystallization of hafnium-oxide-based ferroelectrics for BEOL integration," 2022, 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Their frequent coauthors include:

  • Takashi Ando
  • Vijay Narayanan
  • Franco Stellari
  • Ernest Y. Wu
  • Peilin Song

Significant publication venues where Martin M. Frank has appeared are:

  • arXiv (Cornell University)
  • Applied Physics Letters
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • 2022 International Electron Devices Meeting (IEDM)
  • IEEE Electron Device Letters

The scope of Martin M. Frank's research includes both experimental and theoretical aspects of semiconductor devices. Their work on ferroelectric hafnium zirconium oxide phases, resistive random access memory technology, and analog-AI accelerator architectures highlights an interdisciplinary approach bridging advanced materials and integrated circuit design.

Best Publications

  • High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

    S. Bangsaruntip;G. M. Cohen;A. Majumdar;Y. Zhang

  • HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

    Martin M. Frank;Glen D. Wilk;Dmitri Starodub;Torgny Gustafsson

  • Advanced high-κ dielectric stacks with polySi and metal gates: recent progress and current challenges

    E. P. Gusev;V. Narayanan;M. M. Frank

  • Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode

    Catherine Dubourdieu;John Bruley;Thomas M. Arruda;Agham Posadas

  • Absence of magnetism in hafnium oxide films

    David W. Abraham;Martin M. Frank;Supratik Guha

  • Germanium channel MOSFETs: opportunities and challenges

    H. Shang;M. M. Frank;E. P. Gusev;J. O. Chu

  • Metallic Contact Formation for Molecular Electronics : Interactions between Vapor-Deposited Metals and Self-Assembled Monolayers of Conjugated Mono- and Dithiols

    Bert de Boer;Bert de Boer;Martin M. Frank;Martin M. Frank;Yves J. Chabal;Weirong Jiang

  • From atoms to crystallites: adsorption on oxide-supported metal particles

    Martin Frank;Marcus Bäumer

  • Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides

    Martin M. Frank;Yves J. Chabal;Glen D. Wilk

  • Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon

    N. V. Nguyen;Albert V. Davydov;Deane Chandler-Horowitz;Martin M. Frank

  • Hafnium oxide gate dielectrics on sulfur-passivated germanium

    Martin M. Frank;Steven J. Koester;Matthew Copel;John A. Ott

  • Synthesis and Characterization of Conjugated Mono- and Dithiol Oligomers and Characterization of Their Self-Assembled Monolayers

    Bert de Boer;Hong Meng;Dmitrii F. Perepichka;Jie Zheng

  • High- $\kappa$ /Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

    M.H. Khater;Zhen Zhang;Jin Cai;C. Lavoie

  • Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

    Martin M. Frank;Yves Jean Chabal;Martin L. Green;Annelies Delabie

  • Interaction of rhodium with hydroxylated alumina model substrates

    J. Libuda;M. Frank;A. Sandell;S. Andersson

  • Surface reactivity of Pd nanoparticles supported on polycrystalline substrates as compared to thin film model catalysts: Infrared study of CO adsorption

    Serena Bertarione;Domenica Scarano;Adriano Zecchina;Viktor Johánek

  • SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOLTAGE CONTROL IN CMOS DEVICE FABRICATION WITH HIGH-k DIELECTRICS

    Nestor A. Bojarczuk;Cyril Cabral;Eduard A. Cartier;Matthew W. Copel

  • A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

    S. Krishnan;U. Kwon;N. Moumen;M.W. Stoker

  • Fundamental aspects of HfO 2 -based high-k metal gate stack reliability and implications on t inv -scaling

    E. Cartier;A. Kerber;T. Ando;M. M. Frank

  • Understanding mobility mechanisms in extremely scaled HfO 2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t -tuning dipoles with gate-first process

    T. Ando;M. M. Frank;K. Choi;C. Choi

  • High-k / metal gate innovations enabling continued CMOS scaling

    Martin M. Frank

Frequent Co-Authors

Vijay Narayanan
Vijay Narayanan IBM (United States)
Eduard A. Cartier
Eduard A. Cartier IBM (United States)
Vamsi K. Paruchuri
Vamsi K. Paruchuri IBM (United States)
Hans-Joachim Freund
Hans-Joachim Freund Fritz Haber Institute of the Max Planck Society
Marcus Bäumer
Marcus Bäumer University of Bremen
Matthew Copel
Matthew Copel IBM (United States)
Sufi Zafar
Sufi Zafar IBM (United States)
Cyril Cabral
Cyril Cabral IBM (United States)
Yves J. Chabal
Yves J. Chabal The University of Texas at Dallas
Jörg Libuda
Jörg Libuda University of Erlangen-Nuremberg

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