World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
60
Citations
12434
World Ranking
7086
National Ranking
1770

Alexander A. Demkov publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Alexander A. Demkov sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 506 publications — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Alexander A. Demkov D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Alexander A. Demkov sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 60 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2006 - Fellow of American Physical Society (APS) Citation For contributions to the development of the materials theory of oxides and their interfaces, as applied to CMOS technology development

Overview

Alexander A. Demkov is affiliated with The University of Texas at Austin in the United States. Their research primarily spans the fields of Materials Science, Engineering, and Physics and Astronomy.

The scientist's work focuses on several key subfields including Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, and Biomedical Engineering. Within these areas, their main topics of study cover Photonic and Optical Devices, Photorefractive and Nonlinear Optics, Semiconductor materials and devices, Ferroelectric and Piezoelectric Materials, Electronic and Structural Properties of Oxides, ZnO doping and properties, and Magnetic and transport properties of perovskites and related materials.

Alexander A. Demkov has contributed to multiple high-impact publication venues. Notably, they have published extensively in:

  • Journal of Applied Physics (14 publications)
  • Physical Review Materials (9 publications)
  • Physical Review B (5 publications)
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (4 publications)
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2 publications)

Their recent papers include:

  • "Design rules for strong electro-optic materials" (2020) published in npj Computational Materials
  • "Thick BaTiO3 Epitaxial Films Integrated on Si by RF Sputtering for Electro-Optic Modulators in Si Photonics" (2021) in ACS Applied Materials & Interfaces
  • "Epitaxial integration of BaTiO3 on Si for electro-optic applications" (2021) in Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "Materials for emergent silicon-integrated optical computing" (2021) in Journal of Applied Physics
  • "β-Ga2O3 on Si (001) grown by plasma-assisted MBE with γ-Al2O3 (111) buffer layer: Structural characterization" (2021) in AIP Advances

The researcher frequently collaborates with other scientists including Agham Posadas, Marc Reynaud, Wente Li, John G. Ekerdt, and Sunah Kwon.

Alexander A. Demkov has also been involved in authoring books published by World Scientific. Among these is the repeated publication titled "Handbook of Molecular Beam Epitaxy of Oxide Materials" from the year 2024.

The scientist was awarded the status of Fellow of the American Physical Society (APS) in 2006, with a citation for contributions to the development of the materials theory of oxides and their interfaces, particularly in relation to CMOS technology development.

Best Publications

  • Large Pockels effect in micro- and nanostructured barium titanate integrated on silicon

    Stefan Abel;Felix Eltes;J. Elliott Ortmann;Andreas Messner

  • Electronic structure approach for complex silicas.

    Alexander A. Demkov;José Ortega;Otto F. Sankey;Matthew P. Grumbach

  • A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst

    Li Ji;Martin D. Mcdaniel;Shijun Wang;Agham-Bayan S Posadas

  • Wide-band-gap Si in open fourfold-coordinated clathrate structures.

    Gary B. Adams;Michael Okeeffe;Alexander A Demkov;Otto F. Sankey

  • Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode

    Catherine Dubourdieu;John Bruley;Thomas M. Arruda;Agham Posadas

  • Further developments in the local-orbital density-functional-theory tight-binding method

    James P. Lewis;Kurt R. Glaesemann;Gregory A. Voth;Jürgen Fritsch

  • Charge origin and localization at the n -type SrTiO 3 / LaAlO 3 interface

    Jaekwang Lee;Alexander A. Demkov

  • Advances and applications in the FIREBALL ab initio tight-binding molecular-dynamics formalism

    James P. Lewis;Pavel Jelínek;José Ortega;Alexander A. Demkov

  • Fermi level pinning by defects in HfO2-metal gate stacks

    J. Robertson;O. Sharia;Alexander A Demkov

  • Crystallization in hafnia- and zirconia-based systems

    S. V. Ushakov;A. Navrotsky;Y. Yang;S. Stemmer

  • Electronic structure of oxygen vacancies in SrTiO 3 and LaAlO 3

    C. Mitra;C. Lin;J. Robertson;Alexander A. Demkov

  • Theoretical investigation of random Si-C alloys.

    Alexander A. Demkov;Otto F. Sankey

  • Two-dimensional growth of high-quality strontium titanate thin films on Si

    H. Li;X. Hu;Y. Wei;Z. Yu

  • Atomic and electronic structure of the Si/SrTiO3 interface

    X. Zhang;Alexander A Demkov;Hao Li;X. Hu

  • Highly controllable and stable quantized conductance and resistive switching mechanism in single-crystal TiO2 resistive memory on silicon.

    Chengqing Hu;Martin D. McDaniel;Agham-Bayan S Posadas;Alexander A Demkov

  • Investigating Alternative Gate Dielectrics: A Theoretical Approach

    Alexander A Demkov

  • Optical properties of bulk and thin-film SrTiO3 on Si and Pt

    Stefan Zollner;Alexander A Demkov;R. Liu;P. L. Fejes

  • Mechanism of cleaning Si(100) surface using Sr or SrO for the growth of crystalline SrTiO3 films

    Yi Wei;Xiaoming Hu;Yong Liang;D. C. Jordan

  • Materials Fundamentals of Gate Dielectrics

    Alexander A. Demkov;Alexandra Navrotsky

  • Monoclinic to tetragonal transformations in hafnia and zirconia: A combined calorimetric and density functional study

    Xuhui Luo;Wei Zhou;Sergey V. Ushakov;Alexandra Navrotsky

  • Growth Study and Theoretical Investigation of the Ultrathin Oxide SiO 2 − Si Heterojunction

    Alexander A. Demkov;Otto F. Sankey

Frequent Co-Authors

John G. Ekerdt
John G. Ekerdt The University of Texas at Austin
Otto F. Sankey
Otto F. Sankey Arizona State University
Martha R. McCartney
Martha R. McCartney Arizona State University
Moon J. Kim
Moon J. Kim The University of Texas at Dallas
Edward T. Yu
Edward T. Yu The University of Texas at Austin
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Daniele Caimi
Daniele Caimi IBM (United States)
Qian He
Qian He National University of Singapore
Albina Y. Borisevich
Albina Y. Borisevich Oak Ridge National Laboratory
Bich-Yen Nguyen
Bich-Yen Nguyen Soitec (France)

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