World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
44
Citations
10648
World Ranking
11923
National Ranking
366

Guy Hollinger publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Guy Hollinger sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 184 publications — 25th percentile

25% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Guy Hollinger D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Guy Hollinger sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 44 D-Index — 7th percentile

7% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Guy Hollinger is affiliated with the École Centrale de Lyon in France. Their academic work spans various aspects of engineering and science as indicated by the institutional connection, although specific details on research focus areas or disciplines are not documented here.

The current profile does not list recent papers, publications, or specific topics of research associated with Guy Hollinger. Information about frequent co-authors, publication venues, book publications, main fields, and subfields of study is also not available at this time.

There is no recorded data on awards received by Guy Hollinger, nor indications about the research topics or specialized areas covered in their academic contributions.

Given the lack of additional documented information, it is not possible to provide a detailed analysis of Guy Hollinger's scientific portfolio or impact within the scholarly community beyond their affiliation.

Best Publications

  • Microscopic structure of the SiO 2 /Si interface

    F. J. Himpsel;F. R. McFeely;A. Taleb-Ibrahimi;J. A. Yarmoff

  • Probing the transition layer at the SiO2‐Si interface using core level photoemission

    G. Hollinger;F. J. Himpsel

  • Determination of the Fermi-level pinning position at Si(111) surfaces

    F. J. Himpsel;G. Hollinger;R. A. Pollak

  • Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers.

    G. Hollinger;R. Skheyta-Kabbani;M. Gendry

  • On the nature of oxides on InP surfaces

    G. Hollinger;E. Bergignat;J. Joseph;Y. Robach

  • Oxygen chemisorption and oxide formation on Si(111) and Si(100) surfaces

    G. Hollinger;F. J. Himpsel

  • Microscopic structure of the SiO2/Si interface.

    F. J. Himpsel;F. R. McFeely;A. Taleb-Ibrahimi;J. A. Yarmoff

  • Observation of a C-1s core exciton in diamond.

    J. F. Morar;F. J. Himpsel;G. Hollinger;G. Hughes

  • C 1 s excitation studies of diamond (111). I. Surface core levels

    J. F. Morar;F. J. Himpsel;G. Hollinger;J. L. Jordan

  • Multiple-bonding configurations for oxygen on silicon surfaces

    G. Hollinger;F. J. Himpsel

  • Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)

    J. Brault;M. Gendry;G. Grenet;G. Hollinger

  • C 1s excitation studies of diamond (111). II. Unoccupied surface states

    J. F. Morar;F. J. Himpsel;G. Hollinger;J. L. Jordon

  • Structures chimique et electronique de l'interface SiO2-Si

    Unknown

  • Epitaxy of BaTiO3 thin film on Si(001) using a SrTiO3 buffer layer for non-volatile memory application

    G. Niu;S. Yin;G. Saint-Girons;B. Gautier

  • Structural and chemical properties of InAs layers grown on InP(100) surfaces by arsenic stabilization

    G. Hollinger;D. Gallet;M. Gendry;C. Santinelli

  • Core-level shifts and oxidation states of Ta and W: Electron spectroscopy for chemical analysis applied to surfaces

    F. J. Himpsel;J. F. Morar;F. R. McFeely;R. A. Pollak

  • InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 [micro sign]m

    C. Monat;C. Seassal;X. Letartre;P. Viktorovitch

  • Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)

    J. Brault;M. Gendry;G. Grenet;G. Hollinger

  • Charge Transfer in Amorphous Colored W<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Films Observed by X-Ray Photoelectron Spectroscopy

    Unknown

  • Chemisorption of H 2 O on Si(100)

    D. Schmeisser;F. J. Himpsel;G. Hollinger

  • X-ray photoelectron spectroscopy of thermally grown silicon dioxide films on silicon

    Unknown

  • Si(111) surface oxidation: O 1s core-level study using synchrotron radiation

    G. Hollinger;J.F. Morar;F.J. Himpsel;G. Hughes

  • On the chemistry of passivated oxide–InP interfaces

    G. Hollinger;J. Joseph;Y. Robach;E. Bergignat

  • From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)

    M. Gendry;C. Monat;J. Brault;P. Regreny

  • Chemical cleaning of InP surfaces: Oxide composition and electrical properties

    A. Guivarc’h;H. L’Haridon;G. Pelous;G. Hollinger

  • Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation

    Gang Niu;Guillaume Saint-Girons;Bertrand Vilquin;Gabriel Delhaye

  • Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001)

    G. Delhaye;C. Merckling;M. El-Kazzi;G. Saint-Girons

  • Heterogeneous integration of electrically driven microdisk based laser sources for optical interconnects and photonic ICs

    P. Rojo Romeo;J. Van Campenhout;P. Regreny;A. Kazmierczak

Frequent Co-Authors

Ludovic Largeau
Ludovic Largeau University of Paris-Saclay
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Christelle Monat
Christelle Monat École Centrale de Lyon
Xavier Letartre
Xavier Letartre Institut des Nanotechnologies de Lyon
Christian Seassal
Christian Seassal Institut des Nanotechnologies de Lyon
J-M. Fedeli
J-M. Fedeli CEA LETI
Nicole Jaffrezic-Renault
Nicole Jaffrezic-Renault Claude Bernard University Lyon 1
Jean-Christophe Harmand
Jean-Christophe Harmand University of Paris-Saclay
Mathieu G. Silly
Mathieu G. Silly Centre national de la recherche scientifique, CNRS

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