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Materials Science

D-Index
44
Citations
10648
World Ranking
11925
National Ranking
366

Overview

Guy Hollinger is affiliated with the École Centrale de Lyon in France. Their academic work spans various aspects of engineering and science as indicated by the institutional connection, although specific details on research focus areas or disciplines are not documented here.

The current profile does not list recent papers, publications, or specific topics of research associated with Guy Hollinger. Information about frequent co-authors, publication venues, book publications, main fields, and subfields of study is also not available at this time.

There is no recorded data on awards received by Guy Hollinger, nor indications about the research topics or specialized areas covered in their academic contributions.

Given the lack of additional documented information, it is not possible to provide a detailed analysis of Guy Hollinger's scientific portfolio or impact within the scholarly community beyond their affiliation.

Best Publications

  • Microscopic structure of the SiO 2 /Si interface

    F. J. Himpsel;F. R. McFeely;A. Taleb-Ibrahimi;J. A. Yarmoff

  • Probing the transition layer at the SiO2‐Si interface using core level photoemission

    G. Hollinger;F. J. Himpsel

  • Determination of the Fermi-level pinning position at Si(111) surfaces

    F. J. Himpsel;G. Hollinger;R. A. Pollak

  • Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers.

    G. Hollinger;R. Skheyta-Kabbani;M. Gendry

  • On the nature of oxides on InP surfaces

    G. Hollinger;E. Bergignat;J. Joseph;Y. Robach

  • Oxygen chemisorption and oxide formation on Si(111) and Si(100) surfaces

    G. Hollinger;F. J. Himpsel

  • Microscopic structure of the SiO2/Si interface.

    F. J. Himpsel;F. R. McFeely;A. Taleb-Ibrahimi;J. A. Yarmoff

  • Observation of a C-1s core exciton in diamond.

    J. F. Morar;F. J. Himpsel;G. Hollinger;G. Hughes

  • C 1 s excitation studies of diamond (111). I. Surface core levels

    J. F. Morar;F. J. Himpsel;G. Hollinger;J. L. Jordan

  • Multiple-bonding configurations for oxygen on silicon surfaces

    G. Hollinger;F. J. Himpsel

  • Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)

    J. Brault;M. Gendry;G. Grenet;G. Hollinger

  • C 1s excitation studies of diamond (111). II. Unoccupied surface states

    J. F. Morar;F. J. Himpsel;G. Hollinger;J. L. Jordon

  • Structures chimique et electronique de l'interface SiO2-Si

    Unknown

  • Epitaxy of BaTiO3 thin film on Si(001) using a SrTiO3 buffer layer for non-volatile memory application

    G. Niu;S. Yin;G. Saint-Girons;B. Gautier

  • Structural and chemical properties of InAs layers grown on InP(100) surfaces by arsenic stabilization

    G. Hollinger;D. Gallet;M. Gendry;C. Santinelli

  • Core-level shifts and oxidation states of Ta and W: Electron spectroscopy for chemical analysis applied to surfaces

    F. J. Himpsel;J. F. Morar;F. R. McFeely;R. A. Pollak

  • InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 [micro sign]m

    C. Monat;C. Seassal;X. Letartre;P. Viktorovitch

  • Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)

    J. Brault;M. Gendry;G. Grenet;G. Hollinger

  • Charge Transfer in Amorphous Colored W<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Films Observed by X-Ray Photoelectron Spectroscopy

    Unknown

  • Chemisorption of H 2 O on Si(100)

    D. Schmeisser;F. J. Himpsel;G. Hollinger

  • X-ray photoelectron spectroscopy of thermally grown silicon dioxide films on silicon

    Unknown

  • Si(111) surface oxidation: O 1s core-level study using synchrotron radiation

    G. Hollinger;J.F. Morar;F.J. Himpsel;G. Hughes

  • On the chemistry of passivated oxide–InP interfaces

    G. Hollinger;J. Joseph;Y. Robach;E. Bergignat

  • From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)

    M. Gendry;C. Monat;J. Brault;P. Regreny

  • Chemical cleaning of InP surfaces: Oxide composition and electrical properties

    A. Guivarc’h;H. L’Haridon;G. Pelous;G. Hollinger

  • Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation

    Gang Niu;Guillaume Saint-Girons;Bertrand Vilquin;Gabriel Delhaye

  • Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001)

    G. Delhaye;C. Merckling;M. El-Kazzi;G. Saint-Girons

  • Heterogeneous integration of electrically driven microdisk based laser sources for optical interconnects and photonic ICs

    P. Rojo Romeo;J. Van Campenhout;P. Regreny;A. Kazmierczak

Frequent Co-Authors

Ludovic Largeau
Ludovic Largeau University of Paris-Saclay
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Christelle Monat
Christelle Monat École Centrale de Lyon
Xavier Letartre
Xavier Letartre Institut des Nanotechnologies de Lyon
Christian Seassal
Christian Seassal Institut des Nanotechnologies de Lyon
J-M. Fedeli
J-M. Fedeli CEA LETI
Nicole Jaffrezic-Renault
Nicole Jaffrezic-Renault Claude Bernard University Lyon 1
Jean-Christophe Harmand
Jean-Christophe Harmand University of Paris-Saclay
Mathieu G. Silly
Mathieu G. Silly Centre national de la recherche scientifique, CNRS

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