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Christopher L. Hinkle

Christopher L. Hinkle

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
46
Citations
9197
World Ranking
3363
National Ranking
1241

Overview

Christopher L. Hinkle is affiliated with the University of Notre Dame in the United States. Their research encompasses multiple areas within materials science and engineering, with a particular focus on two-dimensional (2D) materials and semiconductor devices.

The main fields of study for this researcher include:

  • Materials Science
  • Engineering

Within these, the subfields of study most frequently explored are:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering

The primary research topics covered span the following areas:

  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Semiconductor materials and devices
  • Chalcogenide Semiconductor Thin Films
  • Graphene research and applications
  • Machine Learning in Materials Science
  • Copper Interconnects and Reliability

Their publication record includes papers in notable venues such as:

  • ECS Meeting Abstracts
  • npj 2D Materials and Applications
  • ACS Nano
  • arXiv (Cornell University)
  • Nature Materials

Recent publications authored or coauthored by Christopher L. Hinkle highlight their focus on semiconductor materials and device integration:

  • Bandgap engineering of two-dimensional semiconductor materials, 2020, npj 2D Materials and Applications
  • Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications, 2023, ACS Nano
  • Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions, 2023, Nature Materials
  • Materials for interconnects, 2021, MRS Bulletin
  • Tellurium as a successor of silicon for extremely scaled nanowires: a first-principles study, 2020, npj 2D Materials and Applications

Frequent coauthors working alongside Christopher L. Hinkle include:

  • Guanyu Zhou
  • Rehan Younas
  • William G. Vandenberghe
  • Yansong Li
  • Sabyasachi Tiwari

Best Publications

  • Bandgap engineering of two-dimensional semiconductor materials

    A. Chaves;J. G. Azadani;Hussain Alsalman;Hussain Alsalman;D. R. da Costa

  • Defect-Dominated Doping and Contact Resistance in MoS2

    Stephen McDonnell;Rafik Addou;Creighton Buie;Robert M. Wallace

  • GaAs interfacial self-cleaning by atomic layer deposition

    Christopher L Hinkle;A. M. Sonnet;E. M. Vogel;Stephen J Mcdonnell

  • HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

    Stephen McDonnell;Barry Brennan;Angelica Azcatl;Ning Lu

  • Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

    C. L. Hinkle;M. Milojevic;Barry Brennan;A. M. Sonnet

  • Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

    Jaewoo Shim;Sang Hoon Bae;Wei Kong;Doyoon Lee

  • Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces.

    Rafik Addou;Stephen McDonnell;Diego Barrera;Zaibing Guo

  • A roadmap for electronic grade 2D materials

    Natalie Briggs;Shruti Subramanian;Zhong Lin;Xufan Li;Xufan Li

  • HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

    Ruoyu Yue;Adam T. Barton;Hui Zhu;Angelica Azcatl

  • van der Waals epitaxy: 2D materials and topological insulators

    Lee A. Walsh;Christopher L. Hinkle

  • Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance

    Christopher M. Smyth;Rafik Addou;Stephen McDonnell;Christopher L. Hinkle

  • Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications

    C. L. Hinkle;E. M. Vogel;Peide D. Ye;R. M. Wallace

  • MoS2–Titanium Contact Interface Reactions

    Stephen McDonnell;Stephen McDonnell;Christopher Smyth;Christopher L. Hinkle;Robert M. Wallace

  • Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition

    B. J. Hinds;F. Wang;D. M. Wolfe;C. L. Hinkle

  • High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.

    Guanyu Zhou;Rafik Addou;Qingxiao Wang;Shahin Honari

  • Suppression of Subcutaneous Oxidation during the Deposition of Amorphous Lanthanum Aluminate on Silicon

    Lisa F. Edge;Darrell G. Schlom;R T. Brewer;Y J. Chabal

  • Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

    C. L. Hinkle;A. M. Sonnet;E. M. Vogel;Stephen McDonnell

  • Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance - voltage analysis

    Peng Zhao;Ava Khosravi;Angelica Azcatl;Pavel Bolshakov

  • Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    R. V. Galatage;Dmitry M. Zhernokletov;Hong Dong;Barry Brennan

  • Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

    A. M. Sonnet;C. L. Hinkle;M. N. Jivani;R. A. Chapman

  • Is interfacial chemistry correlated to gap states for high-k/III-V interfaces?

    W. Wang;C. L. Hinkle;E. M. Vogel;K. Cho

Frequent Co-Authors

Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Eric M. Vogel
Eric M. Vogel Georgia Institute of Technology
Jiyoung Kim
Jiyoung Kim The University of Texas at Dallas
Stephen McDonnell
Stephen McDonnell University of Virginia
Rafik Addou
Rafik Addou The University of Texas at Dallas
Paul K. Hurley
Paul K. Hurley Tyndall National Institute
Gerald Lucovsky
Gerald Lucovsky North Carolina State University
Moon J. Kim
Moon J. Kim The University of Texas at Dallas
Yves J. Chabal
Yves J. Chabal The University of Texas at Dallas
Luigi Colombo
Luigi Colombo The University of Texas at Dallas

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