Christopher L. Hinkle mostly deals with X-ray photoelectron spectroscopy, Atomic layer deposition, Analytical chemistry, Inorganic chemistry and Silicon. His X-ray photoelectron spectroscopy research includes elements of Semiconductor device, Crystal and Gallium arsenide. His Atomic layer deposition research is multidisciplinary, incorporating elements of Oxide, Nanoelectronics and Semiconductor.
His work focuses on many connections between Semiconductor and other disciplines, such as Passivation, that overlap with his field of interest in Capacitance and Deposition. His Analytical chemistry study combines topics from a wide range of disciplines, such as Diffusion barrier, Thin film, Transmission electron microscopy and Work function. His Inorganic chemistry study combines topics in areas such as Vacuum deposition and Sulfur.
The scientist’s investigation covers issues in Optoelectronics, Analytical chemistry, X-ray photoelectron spectroscopy, Dielectric and Atomic layer deposition. In his research on the topic of Optoelectronics, Electron mobility is strongly related with MOSFET. His studies in Analytical chemistry integrate themes in fields like Thin film, Annealing, Work function and Silicate.
His X-ray photoelectron spectroscopy research is multidisciplinary, incorporating perspectives in Oxide, Metal, Semiconductor and Gallium arsenide. The study incorporates disciplines such as Condensed matter physics, Quantum tunnelling and Leakage in addition to Dielectric. His Atomic layer deposition research integrates issues from Inorganic chemistry, Chemical vapor deposition and Passivation.
Christopher L. Hinkle mainly investigates Optoelectronics, Condensed matter physics, Engineering physics, X-ray photoelectron spectroscopy and Molecular beam epitaxy. His Optoelectronics research is multidisciplinary, incorporating elements of Sputtering, Topological insulator, Field-effect transistor, Passivation and Contact resistance. As part of his studies on Engineering physics, Christopher L. Hinkle frequently links adjacent subjects like Semiconductor.
His work is dedicated to discovering how Semiconductor, Semiconductor device are connected with Electron mobility and other disciplines. His X-ray photoelectron spectroscopy study focuses on Photoemission spectroscopy in particular. Doping is closely connected to Quantum tunnelling in his research, which is encompassed under the umbrella topic of Molecular beam epitaxy.
His scientific interests lie mostly in Optoelectronics, Doping, Contact resistance, Dangling bond and Thin film. His Optoelectronics research includes themes of Field-effect transistor, Passivation, Ohmic contact, X-ray photoelectron spectroscopy and Forming gas. The concepts of his Doping study are interwoven with issues in Semiconductor device, Electron mobility, Semiconductor, Bilayer graphene and Engineering physics.
He combines subjects such as Photoresist, Photolithography, O2 plasma, Schottky barrier and Transistor with his study of Contact resistance. His Dangling bond research incorporates themes from Molecular beam epitaxy, Tunnel diode, Quantum tunnelling and Dielectric.
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Defect-Dominated Doping and Contact Resistance in MoS2
Stephen McDonnell;Rafik Addou;Creighton Buie;Robert M. Wallace.
ACS Nano (2014)
GaAs interfacial self-cleaning by atomic layer deposition
Christopher L Hinkle;A. M. Sonnet;E. M. Vogel;Stephen J Mcdonnell.
Applied Physics Letters (2008)
Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
C. L. Hinkle;M. Milojevic;Barry Brennan;A. M. Sonnet.
Applied Physics Letters (2009)
Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces.
Rafik Addou;Stephen McDonnell;Diego Barrera;Zaibing Guo.
ACS Nano (2015)
Bandgap engineering of two-dimensional semiconductor materials
A. Chaves;J. G. Azadani;Hussain Alsalman;Hussain Alsalman;D. R. da Costa.
npj 2D Materials and Applications (2020)
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
Stephen McDonnell;Barry Brennan;Angelica Azcatl;Ning Lu.
ACS Nano (2013)
HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy
Ruoyu Yue;Adam T. Barton;Hui Zhu;Angelica Azcatl.
ACS Nano (2015)
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
Jaewoo Shim;Sang Hoon Bae;Wei Kong;Doyoon Lee.
A roadmap for electronic grade 2D materials
Natalie Briggs;Shruti Subramanian;Zhong Lin;Xufan Li;Xufan Li.
2D Materials (2019)
Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications
C. L. Hinkle;E. M. Vogel;Peide D. Ye;R. M. Wallace.
Current Opinion in Solid State & Materials Science (2011)
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