D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 35 Citations 5,360 91 World Ranking 3723 National Ranking 1436

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Silicon
  • Atom

Christopher L. Hinkle mostly deals with X-ray photoelectron spectroscopy, Atomic layer deposition, Analytical chemistry, Inorganic chemistry and Silicon. His X-ray photoelectron spectroscopy research includes elements of Semiconductor device, Crystal and Gallium arsenide. His Atomic layer deposition research is multidisciplinary, incorporating elements of Oxide, Nanoelectronics and Semiconductor.

His work focuses on many connections between Semiconductor and other disciplines, such as Passivation, that overlap with his field of interest in Capacitance and Deposition. His Analytical chemistry study combines topics from a wide range of disciplines, such as Diffusion barrier, Thin film, Transmission electron microscopy and Work function. His Inorganic chemistry study combines topics in areas such as Vacuum deposition and Sulfur.

His most cited work include:

  • Defect-Dominated Doping and Contact Resistance in MoS2 (470 citations)
  • GaAs interfacial self-cleaning by atomic layer deposition (334 citations)
  • Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning (232 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Analytical chemistry, X-ray photoelectron spectroscopy, Dielectric and Atomic layer deposition. In his research on the topic of Optoelectronics, Electron mobility is strongly related with MOSFET. His studies in Analytical chemistry integrate themes in fields like Thin film, Annealing, Work function and Silicate.

His X-ray photoelectron spectroscopy research is multidisciplinary, incorporating perspectives in Oxide, Metal, Semiconductor and Gallium arsenide. The study incorporates disciplines such as Condensed matter physics, Quantum tunnelling and Leakage in addition to Dielectric. His Atomic layer deposition research integrates issues from Inorganic chemistry, Chemical vapor deposition and Passivation.

He most often published in these fields:

  • Optoelectronics (42.45%)
  • Analytical chemistry (28.06%)
  • X-ray photoelectron spectroscopy (29.50%)

What were the highlights of his more recent work (between 2018-2021)?

  • Optoelectronics (42.45%)
  • Condensed matter physics (16.55%)
  • Engineering physics (10.07%)

In recent papers he was focusing on the following fields of study:

Christopher L. Hinkle mainly investigates Optoelectronics, Condensed matter physics, Engineering physics, X-ray photoelectron spectroscopy and Molecular beam epitaxy. His Optoelectronics research is multidisciplinary, incorporating elements of Sputtering, Topological insulator, Field-effect transistor, Passivation and Contact resistance. As part of his studies on Engineering physics, Christopher L. Hinkle frequently links adjacent subjects like Semiconductor.

His work is dedicated to discovering how Semiconductor, Semiconductor device are connected with Electron mobility and other disciplines. His X-ray photoelectron spectroscopy study focuses on Photoemission spectroscopy in particular. Doping is closely connected to Quantum tunnelling in his research, which is encompassed under the umbrella topic of Molecular beam epitaxy.

Between 2018 and 2021, his most popular works were:

  • A roadmap for electronic grade 2D materials (78 citations)
  • Bandgap engineering of two-dimensional semiconductor materials (39 citations)
  • Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts (13 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Silicon
  • Atom

His scientific interests lie mostly in Optoelectronics, Doping, Contact resistance, Dangling bond and Thin film. His Optoelectronics research includes themes of Field-effect transistor, Passivation, Ohmic contact, X-ray photoelectron spectroscopy and Forming gas. The concepts of his Doping study are interwoven with issues in Semiconductor device, Electron mobility, Semiconductor, Bilayer graphene and Engineering physics.

He combines subjects such as Photoresist, Photolithography, O2 plasma, Schottky barrier and Transistor with his study of Contact resistance. His Dangling bond research incorporates themes from Molecular beam epitaxy, Tunnel diode, Quantum tunnelling and Dielectric.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Defect-Dominated Doping and Contact Resistance in MoS2

Stephen McDonnell;Rafik Addou;Creighton Buie;Robert M. Wallace.
ACS Nano (2014)

725 Citations

GaAs interfacial self-cleaning by atomic layer deposition

Christopher L Hinkle;A. M. Sonnet;E. M. Vogel;Stephen J Mcdonnell.
Applied Physics Letters (2008)

469 Citations

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

C. L. Hinkle;M. Milojevic;Barry Brennan;A. M. Sonnet.
Applied Physics Letters (2009)

304 Citations

Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces.

Rafik Addou;Stephen McDonnell;Diego Barrera;Zaibing Guo.
ACS Nano (2015)

262 Citations

Bandgap engineering of two-dimensional semiconductor materials

A. Chaves;J. G. Azadani;Hussain Alsalman;Hussain Alsalman;D. R. da Costa.
npj 2D Materials and Applications (2020)

260 Citations

HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

Stephen McDonnell;Barry Brennan;Angelica Azcatl;Ning Lu.
ACS Nano (2013)

256 Citations

HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

Ruoyu Yue;Adam T. Barton;Hui Zhu;Angelica Azcatl.
ACS Nano (2015)

196 Citations

Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

Jaewoo Shim;Sang Hoon Bae;Wei Kong;Doyoon Lee.
Science (2018)

162 Citations

A roadmap for electronic grade 2D materials

Natalie Briggs;Shruti Subramanian;Zhong Lin;Xufan Li;Xufan Li.
2D Materials (2019)

156 Citations

Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications

C. L. Hinkle;E. M. Vogel;Peide D. Ye;R. M. Wallace.
Current Opinion in Solid State & Materials Science (2011)

153 Citations

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