World's Best Scientists 2026 revealed!
Christopher L. Hinkle

Christopher L. Hinkle

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
46
Citations
9197
World Ranking
3363
National Ranking
1242

Christopher L. Hinkle publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Christopher L. Hinkle sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 122 publications — 7th percentile

7% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Christopher L. Hinkle D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Christopher L. Hinkle sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 46 D-Index — 52nd percentile

52% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Christopher L. Hinkle is affiliated with the University of Notre Dame in the United States. Their research encompasses multiple areas within materials science and engineering, with a particular focus on two-dimensional (2D) materials and semiconductor devices.

The main fields of study for this researcher include:

  • Materials Science
  • Engineering

Within these, the subfields of study most frequently explored are:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering

The primary research topics covered span the following areas:

  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Semiconductor materials and devices
  • Chalcogenide Semiconductor Thin Films
  • Graphene research and applications
  • Machine Learning in Materials Science
  • Copper Interconnects and Reliability

Their publication record includes papers in notable venues such as:

  • ECS Meeting Abstracts
  • npj 2D Materials and Applications
  • ACS Nano
  • arXiv (Cornell University)
  • Nature Materials

Recent publications authored or coauthored by Christopher L. Hinkle highlight their focus on semiconductor materials and device integration:

  • Bandgap engineering of two-dimensional semiconductor materials, 2020, npj 2D Materials and Applications
  • Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications, 2023, ACS Nano
  • Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions, 2023, Nature Materials
  • Materials for interconnects, 2021, MRS Bulletin
  • Tellurium as a successor of silicon for extremely scaled nanowires: a first-principles study, 2020, npj 2D Materials and Applications

Frequent coauthors working alongside Christopher L. Hinkle include:

  • Guanyu Zhou
  • Rehan Younas
  • William G. Vandenberghe
  • Yansong Li
  • Sabyasachi Tiwari

Best Publications

  • Bandgap engineering of two-dimensional semiconductor materials

    A. Chaves;J. G. Azadani;Hussain Alsalman;Hussain Alsalman;D. R. da Costa

  • Defect-Dominated Doping and Contact Resistance in MoS2

    Stephen McDonnell;Rafik Addou;Creighton Buie;Robert M. Wallace

  • GaAs interfacial self-cleaning by atomic layer deposition

    Christopher L Hinkle;A. M. Sonnet;E. M. Vogel;Stephen J Mcdonnell

  • HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

    Stephen McDonnell;Barry Brennan;Angelica Azcatl;Ning Lu

  • Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

    C. L. Hinkle;M. Milojevic;Barry Brennan;A. M. Sonnet

  • Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

    Jaewoo Shim;Sang Hoon Bae;Wei Kong;Doyoon Lee

  • Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces.

    Rafik Addou;Stephen McDonnell;Diego Barrera;Zaibing Guo

  • A roadmap for electronic grade 2D materials

    Natalie Briggs;Shruti Subramanian;Zhong Lin;Xufan Li;Xufan Li

  • HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

    Ruoyu Yue;Adam T. Barton;Hui Zhu;Angelica Azcatl

  • van der Waals epitaxy: 2D materials and topological insulators

    Lee A. Walsh;Christopher L. Hinkle

  • Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance

    Christopher M. Smyth;Rafik Addou;Stephen McDonnell;Christopher L. Hinkle

  • Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications

    C. L. Hinkle;E. M. Vogel;Peide D. Ye;R. M. Wallace

  • MoS2–Titanium Contact Interface Reactions

    Stephen McDonnell;Stephen McDonnell;Christopher Smyth;Christopher L. Hinkle;Robert M. Wallace

  • Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition

    B. J. Hinds;F. Wang;D. M. Wolfe;C. L. Hinkle

  • High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.

    Guanyu Zhou;Rafik Addou;Qingxiao Wang;Shahin Honari

  • Suppression of Subcutaneous Oxidation during the Deposition of Amorphous Lanthanum Aluminate on Silicon

    Lisa F. Edge;Darrell G. Schlom;R T. Brewer;Y J. Chabal

  • Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

    C. L. Hinkle;A. M. Sonnet;E. M. Vogel;Stephen McDonnell

  • Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance - voltage analysis

    Peng Zhao;Ava Khosravi;Angelica Azcatl;Pavel Bolshakov

  • Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    R. V. Galatage;Dmitry M. Zhernokletov;Hong Dong;Barry Brennan

  • Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

    A. M. Sonnet;C. L. Hinkle;M. N. Jivani;R. A. Chapman

  • Is interfacial chemistry correlated to gap states for high-k/III-V interfaces?

    W. Wang;C. L. Hinkle;E. M. Vogel;K. Cho

Frequent Co-Authors

Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Eric M. Vogel
Eric M. Vogel Georgia Institute of Technology
Jiyoung Kim
Jiyoung Kim The University of Texas at Dallas
Stephen McDonnell
Stephen McDonnell University of Virginia
Rafik Addou
Rafik Addou The University of Texas at Dallas
Paul K. Hurley
Paul K. Hurley Tyndall National Institute
Gerald Lucovsky
Gerald Lucovsky North Carolina State University
Moon J. Kim
Moon J. Kim The University of Texas at Dallas
Yves J. Chabal
Yves J. Chabal The University of Texas at Dallas
Luigi Colombo
Luigi Colombo The University of Texas at Dallas

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