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Materials Science

D-Index
47
Citations
11645
World Ranking
11000
National Ranking
2581

Overview

Stephen McDonnell is affiliated with the University of Virginia in the United States. Their research primarily spans the fields of Engineering and Materials Science, with significant contributions to subfields including Electrical and Electronic Engineering, Materials Chemistry, Renewable Energy, Sustainability and the Environment, Atomic and Molecular Physics, and Optics, as well as Infectious Diseases.

The scientist has published extensively on topics such as:

  • 2D Materials and Applications
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Ferroelectric and Negative Capacitance Devices
  • Chalcogenide Semiconductor Thin Films
  • Perovskite Materials and Applications
  • Electrocatalysts for Energy Conversion

Stephen McDonnell has contributed to notable papers across multiple scientific journals. Selected recent publications include:

  • Rehabilitation versus surgical reconstruction for non-acute anterior cruciate ligament injury (ACL SNNAP): a pragmatic randomised controlled trial, 2022, The Lancet
  • Aqueous passivation of multi-principal element alloy Ni38Fe20Cr22Mn10Co10: Unexpected high Cr enrichment within the passive film, 2020, Acta Materialia
  • Thermally Induced Defects on WSe2, 2020, The Journal of Physical Chemistry C
  • Impact of oxygen content on phase constitution and ferroelectric behavior of hafnium oxide thin films deposited by reactive high-power impulse magnetron sputtering, 2022, Acta Materialia
  • The role of chromium content in aqueous passivation of a non-equiatomic Ni38Fe20CrxMn21-0.5xCo21-0.5x multi-principal element alloy (x = 22, 14, 10, 6 at%) in acidic chloride solution, 2022, Acta Materialia

Frequent publication venues where Stephen McDonnell's work appears include:

  • Acta Materialia
  • Advanced Materials Interfaces
  • 2D Materials
  • Applied Physics Letters
  • Applied Surface Science

Collaborations have been established with other researchers including:

  • Maria Gabriela Sales
  • Peter M. Litwin
  • Jon F. Ihlefeld
  • Samantha T. Jaszewski
  • Shelby S. Fields

Best Publications

  • The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

    A. Pirkle;J. Chan;A. Venugopal;D. Hinojos

  • Defect-Dominated Doping and Contact Resistance in MoS2

    Stephen McDonnell;Rafik Addou;Creighton Buie;Robert M. Wallace

  • MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

    Steven Chuang;Corsin Battaglia;Angelica Azcatl;Stephen McDonnell

  • Hole Selective MoOx Contact for Silicon Solar Cells

    Corsin Battaglia;Xingtian Yin;Xingtian Yin;Xingtian Yin;Maxwell Zheng;Maxwell Zheng;Ian D. Sharp

  • 2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications

    Zhong Lin;Amber McCreary;Natalie Briggs;Shruti Subramanian

  • GaAs interfacial self-cleaning by atomic layer deposition

    Christopher L Hinkle;A. M. Sonnet;E. M. Vogel;Stephen J Mcdonnell

  • Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition

    Sarah M. Eichfeld;Lorraine Hossain;Yu Chuan Lin;Aleksander F. Piasecki

  • Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon

    Li Li Zhang;Xin Zhao;Xin Zhao;Hengxing Ji;Meryl D. Stoller

  • Toward the Controlled Synthesis of Hexagonal Boron Nitride Films

    Ariel Ismach;Harry Chou;Domingo A. Ferrer;Yaping Wu

  • HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

    Stephen McDonnell;Barry Brennan;Angelica Azcatl;Ning Lu

  • Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces.

    Rafik Addou;Stephen McDonnell;Diego Barrera;Zaibing Guo

  • Hole Selective MoO x Contact for Silicon Solar Cells

    Corsin Battaglia;Xingtian Yin;Maxwell Zheng;Ian D. Sharp

  • Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition.

    Jack Chan;Archana Venugopal;Adam Pirkle;Stephen McDonnell

  • Air stable p-doping of WSe2 by covalent functionalization.

    Peida Zhao;Peida Zhao;Daisuke Kiriya;Daisuke Kiriya;Angelica Azcatl;Chenxi Zhang

  • HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

    Ruoyu Yue;Adam T. Barton;Hui Zhu;Angelica Azcatl

  • MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

    Angelica Azcatl;Stephen McDonnell;K C Santosh;Xin Peng

  • Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments.

    Stephen McDonnell;Angelica Azcatl;Rafik Addou;Cheng Gong

  • Passivation of a corrosion resistant high entropy alloy in non-oxidizing sulfate solutions

    Kathleen F. Quiambao;Stephen J. McDonnell;Daniel K. Schreiber;Angela Y. Gerard

  • Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance

    Christopher M. Smyth;Rafik Addou;Stephen McDonnell;Christopher L. Hinkle

  • MoS2–Titanium Contact Interface Reactions

    Stephen McDonnell;Stephen McDonnell;Christopher Smyth;Christopher L. Hinkle;Robert M. Wallace

  • Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and graphene

    Suresh Vishwanath;Suresh Vishwanath;Xinyu Liu;Sergei Rouvimov;Patrick C. Mende

Frequent Co-Authors

Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Christopher L. Hinkle
Christopher L. Hinkle University of Notre Dame
Jiyoung Kim
Jiyoung Kim The University of Texas at Dallas
Yves J. Chabal
Yves J. Chabal The University of Texas at Dallas
Kyeongjae Cho
Kyeongjae Cho The University of Texas at Dallas
Luigi Colombo
Luigi Colombo The University of Texas at Dallas
Rafik Addou
Rafik Addou The University of Texas at Dallas
Ali Javey
Ali Javey University of California, Berkeley
Moon J. Kim
Moon J. Kim The University of Texas at Dallas
Rodney S. Ruoff
Rodney S. Ruoff Ulsan National Institute of Science and Technology

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