World's Best Scientists 2026 revealed!

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 64 5875 5684 1511 1412 407 15093

Jiyoung Kim publications per year

The chart shows the history of publications by Jiyoung Kim between 1991 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Jiyoung Kim published across 35 years, from 1991 to 2025, averaging 15.9 papers a year. Output peaked at 33 publications in 2023. 48 of the 558 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1991 to 2025. Vertical axis: number of publications, 0 to 33. Peak 33 publications in 2023. 1991: 4 publications 1992: 4 publications 1993: 6 publications 1994: 12 publications 1995: 2 publications 1996: 0 publications 1997: 3 publications 1998: 3 publications 1999: 1 publication 2000: 9 publications 2001: 7 publications 2002: 7 publications 2003: 12 publications 2004: 16 publications 2005: 7 publications 2006: 18 publications 2007: 21 publications 2008: 29 publications 2009: 26 publications 2010: 24 publications 2011: 20 publications 2012: 26 publications 2013: 23 publications 2014: 23 publications 2015: 18 publications 2016: 24 publications 2017: 19 publications 2018: 22 publications 2019: 28 publications 2020: 18 publications 2021: 18 publications 2022: 27 publications 2023: 33 publications 2024: 24 publications 2025: 24 publications
1991 2025

558 publications in total across all disciplines

View publications per year as a table
Jiyoung Kim: publications per year, 1991 to 2025
Year Publications
1991 4
1992 4
1993 6
1994 12
1995 2
1996 0
1997 3
1998 3
1999 1
2000 9
2001 7
2002 7
2003 12
2004 16
2005 7
2006 18
2007 21
2008 29
2009 26
2010 24
2011 20
2012 26
2013 23
2014 23
2015 18
2016 24
2017 19
2018 22
2019 28
2020 18
2021 18
2022 27
2023 33
2024 24
2025 24
Total 558
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Jiyoung Kim publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jiyoung Kim sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 390–409 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 407 publications — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321 407
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Jiyoung Kim D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jiyoung Kim sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 64–65 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 64 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533 64
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Jiyoung Kim is affiliated with The University of Texas at Dallas in the United States. Their research spans multiple fields primarily within engineering and materials science, reflecting a substantial interdisciplinary focus. The main fields of study include Engineering and Materials Science, with subfields concentrating on Electrical and Electronic Engineering, Materials Chemistry, Civil and Structural Engineering, Mechanical Engineering, and Atomic and Molecular Physics, and Optics.

The scientist's work covers several prominent research topics, among which are:

  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • MXene and MAX Phase Materials
  • Advanced Memory and Neural Computing
  • Concrete and Cement Materials Research
  • Concrete Properties and Behavior
  • Innovative concrete reinforcement materials

Jiyoung Kim has contributed to a range of scientific publications, including journal articles and conference abstracts. Recent notable papers include:

  • "A chemically modified laser-induced porous graphene based flexible and ultrasensitive electrochemical biosensor for sweat glucose detection" (2020), published in Sensors and Actuators B Chemical
  • "Design guidelines for a high-performance hard carbon anode in sodium ion batteries" (2024), published in Energy & Environmental Science
  • "Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks" (2020), published in Small
  • "Charge Transport Layer-Dependent Electronic Band Bending in Perovskite Solar Cells and Its Correlation to Light-Induced Device Degradation" (2020), published in ACS Energy Letters
  • "A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films" (2020), published in Materials

The scientist frequently publishes in several venues, including:

  • ECS Meeting Abstracts
  • arXiv (Cornell University)
  • Applied Physics Letters
  • Construction and Building Materials
  • physica status solidi (RRL) - Rapid Research Letters

Jiyoung Kim collaborates regularly with a number of co-authors, including Yong Chan Jung, Si Joon Kim, Jaidah Mohan, Harrison Sejoon Kim, and Rino Choi.

Best Publications

  • GaAs interfacial self-cleaning by atomic layer deposition

    Christopher L Hinkle;A. M. Sonnet;E. M. Vogel;Stephen J Mcdonnell

  • Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

    Angelica Azcatl;Xiaoye Qin;Abhijith Prakash;Chenxi Zhang

  • Template-Directed Synthesis of Oxide Nanotubes: Fabrication, Characterization, and Applications†

    Changdeuck Bae;Hyunjun Yoo;Sihyeong Kim;Kyungeun Lee

  • Metal contacts on physical vapor deposited monolayer MoS2

    Cheng Gong;Chunming Huang;Justin Miller;Lanxia Cheng

  • Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics

    Bongki Lee;Seong-Yong Park;Hyun-Chul Kim;KyeongJae Cho

  • Formation of TiO2 and ZrO2 Nanotubes Using Atomic Layer Deposition with Ultraprecise Control of the Wall Thickness

    Hyunjung Shin;Dae Kyun Jeong;Jaegab Lee;Myung Mo Sung

  • Comparative transcriptome profiling of the human and mouse dorsal root ganglia: an RNA-seq–based resource for pain and sensory neuroscience research

    Pradipta Ray;Andrew Torck;Lilyana Quigley;Andi Wangzhou

  • HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

    Stephen McDonnell;Barry Brennan;Angelica Azcatl;Ning Lu

  • Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films: A Review of Recent Advances

    Si Joon Kim;Jaidah Mohan;Scott R. Summerfelt;Jiyoung Kim

  • Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

    Si Joon Kim;Dushyant Narayan;Jae-Gil Lee;Jaidah Mohan

  • Graphene flash memory.

    Augustin J. Hong;Emil B. Song;Emil B. Song;Hyung Suk Yu;Matthew J. Allen

  • HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

    Ruoyu Yue;Adam T. Barton;Hui Zhu;Angelica Azcatl

  • MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

    Angelica Azcatl;Stephen McDonnell;K C Santosh;Xin Peng

  • Ozone Adsorption on Graphene: Ab Initio Study and Experimental Validation

    Geunsik Lee;Bongki Lee;Jiyoung Kim;Kyeongjae Cho

  • Novel Vertical-Stacked-Array-Transistor (VSAT) for ultra-high-density and cost-effective NAND Flash memory devices and SSD (Solid State Drive)

    Jiyoung Kim;Augustin J. Hong;Sung Min Kim;Emil B. Song

  • Dissolution Chemistry and Biocompatibility of Single-Crystalline Silicon Nanomembranes and Associated Materials for Transient Electronics

    Suk Won Hwang;Gayoung Park;Chris Edwards;Elise A. Corbin

  • Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States

    Gwang Sik Kim;Seung Hwan Kim;June Park;Kyu Hyun Han

  • A stacked memory device on logic 3D technology for ultra-high-density data storage

    Jiyoung Kim;Augustin J. Hong;Sung Min Kim;Kyeong Sik Shin

  • Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

    M. Milojevic;F. S. Aguirre-Tostado;C. L. Hinkle;H. C. Kim

  • Remote Plasma Oxidation and Atomic Layer Etching of MoS2

    Hui Zhu;Xiaoye Qin;Lanxia Cheng;Angelica Azcatl

Frequent Co-Authors

Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Christopher L. Hinkle
Christopher L. Hinkle University of Notre Dame
Hyunjung Shin
Hyunjung Shin Sungkyunkwan University
Kyeongjae Cho
Kyeongjae Cho The University of Texas at Dallas
Stephen McDonnell
Stephen McDonnell University of Virginia
Jack C. Lee
Jack C. Lee The University of Texas at Austin
Luigi Colombo
Luigi Colombo The University of Texas at Dallas
Rafik Addou
Rafik Addou The University of Texas at Dallas
Eric M. Vogel
Eric M. Vogel Georgia Institute of Technology
Dongkyu Cha
Dongkyu Cha King Abdullah University of Science and Technology

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