2026 Jiyoung Kim: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	64	5877	5687	1513	1415	407	15093

Overview

Jiyoung Kim is affiliated with The University of Texas at Dallas in the United States. Their research spans multiple fields primarily within engineering and materials science, reflecting a substantial interdisciplinary focus. The main fields of study include Engineering and Materials Science, with subfields concentrating on Electrical and Electronic Engineering, Materials Chemistry, Civil and Structural Engineering, Mechanical Engineering, and Atomic and Molecular Physics, and Optics.

The scientist's work covers several prominent research topics, among which are:

Semiconductor materials and devices
Ferroelectric and Negative Capacitance Devices
MXene and MAX Phase Materials
Advanced Memory and Neural Computing
Concrete and Cement Materials Research
Concrete Properties and Behavior
Innovative concrete reinforcement materials

Jiyoung Kim has contributed to a range of scientific publications, including journal articles and conference abstracts. Recent notable papers include:

"A chemically modified laser-induced porous graphene based flexible and ultrasensitive electrochemical biosensor for sweat glucose detection" (2020), published in Sensors and Actuators B Chemical
"Design guidelines for a high-performance hard carbon anode in sodium ion batteries" (2024), published in Energy & Environmental Science
"Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks" (2020), published in Small
"Charge Transport Layer-Dependent Electronic Band Bending in Perovskite Solar Cells and Its Correlation to Light-Induced Device Degradation" (2020), published in ACS Energy Letters
"A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films" (2020), published in Materials

The scientist frequently publishes in several venues, including:

ECS Meeting Abstracts
arXiv (Cornell University)
Applied Physics Letters
Construction and Building Materials
physica status solidi (RRL) - Rapid Research Letters

Jiyoung Kim collaborates regularly with a number of co-authors, including Yong Chan Jung, Si Joon Kim, Jaidah Mohan, Harrison Sejoon Kim, and Rino Choi.

Best Publications

GaAs interfacial self-cleaning by atomic layer deposition

Christopher L Hinkle;A. M. Sonnet;E. M. Vogel;Stephen J Mcdonnell

489
Citations
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

Angelica Azcatl;Xiaoye Qin;Abhijith Prakash;Chenxi Zhang

423
Citations
Template-Directed Synthesis of Oxide Nanotubes: Fabrication, Characterization, and Applications†

Changdeuck Bae;Hyunjun Yoo;Sihyeong Kim;Kyungeun Lee

379
Citations
Metal contacts on physical vapor deposited monolayer MoS2

Cheng Gong;Chunming Huang;Justin Miller;Lanxia Cheng

350
Citations
Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics

Bongki Lee;Seong-Yong Park;Hyun-Chul Kim;KyeongJae Cho

347
Citations
Formation of TiO2 and ZrO2 Nanotubes Using Atomic Layer Deposition with Ultraprecise Control of the Wall Thickness

Hyunjung Shin;Dae Kyun Jeong;Jaegab Lee;Myung Mo Sung

346
Citations
Comparative transcriptome profiling of the human and mouse dorsal root ganglia: an RNA-seq–based resource for pain and sensory neuroscience research

Pradipta Ray;Andrew Torck;Lilyana Quigley;Andi Wangzhou

337
Citations
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability

Stephen McDonnell;Barry Brennan;Angelica Azcatl;Ning Lu

334
Citations
Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films: A Review of Recent Advances

Si Joon Kim;Jaidah Mohan;Scott R. Summerfelt;Jiyoung Kim

330
Citations
Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Si Joon Kim;Dushyant Narayan;Jae-Gil Lee;Jaidah Mohan

303
Citations
Graphene flash memory.

Augustin J. Hong;Emil B. Song;Emil B. Song;Hyung Suk Yu;Matthew J. Allen

292
Citations
HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy

Ruoyu Yue;Adam T. Barton;Hui Zhu;Angelica Azcatl

260
Citations
MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

Angelica Azcatl;Stephen McDonnell;K C Santosh;Xin Peng

243
Citations
Ozone Adsorption on Graphene: Ab Initio Study and Experimental Validation

Geunsik Lee;Bongki Lee;Jiyoung Kim;Kyeongjae Cho

236
Citations
Novel Vertical-Stacked-Array-Transistor (VSAT) for ultra-high-density and cost-effective NAND Flash memory devices and SSD (Solid State Drive)

Jiyoung Kim;Augustin J. Hong;Sung Min Kim;Emil B. Song

218
Citations
Dissolution Chemistry and Biocompatibility of Single-Crystalline Silicon Nanomembranes and Associated Materials for Transient Electronics

Suk Won Hwang;Gayoung Park;Chris Edwards;Elise A. Corbin

215
Citations
Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States

Gwang Sik Kim;Seung Hwan Kim;June Park;Kyu Hyun Han

206
Citations
A stacked memory device on logic 3D technology for ultra-high-density data storage

Jiyoung Kim;Augustin J. Hong;Sung Min Kim;Kyeong Sik Shin

205
Citations
Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

M. Milojevic;F. S. Aguirre-Tostado;C. L. Hinkle;H. C. Kim

202
Citations
Remote Plasma Oxidation and Atomic Layer Etching of MoS2

Hui Zhu;Xiaoye Qin;Lanxia Cheng;Angelica Azcatl

186
Citations