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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
31
Citations
3294
World Ranking
6651
National Ranking
2167

Overview

Anup Bhalla is a researcher affiliated with Rensselaer Polytechnic Institute in the United States with a focus on engineering disciplines. Their research primarily covers electrical and electronic engineering, with contributions also in mechanical engineering, computational mechanics, and automotive engineering.

Their work extensively explores silicon carbide semiconductor technologies, semiconductor materials and devices, and advanced DC-DC converters. Other notable research topics include advancements in semiconductor devices and circuit design, induction heating and inverter technology, physics and engineering research articles, and electric and hybrid vehicle technologies.

Frequent publication venues for their research include:

  • IEEE Power Electronics Magazine
  • ATZelectronics worldwide
  • Materials science forum
  • ATZelektronik

Recent papers authored or co-authored by Anup Bhalla include:

  • "Enabling 99.3% Efficiency in 3.6 kW Totem-Pole PFC Using New 750 V Gen 4 SiC FETs" (2021) published in IEEE Power Electronics Magazine
  • "Silicon Carbide Semiconductors with Wide Bandgap for Electric Vehicles" (2021) published in ATZelectronics worldwide
  • "High-Performance SIP Half-Bridge IPM Based on 35mΩ/1200V SiC Stack-Cascode" (2020) published in Materials science forum
  • "Siliziumkarbidhalbleiter mit breitem Bandabstand für Elektrofahrzeuge" (2021) published in ATZelektronik

Anup Bhalla collaborates regularly with several researchers, including:

  • Ke Zhu
  • Jonathan Dodge
  • Peter Alexandrov
  • Xueqing Li
  • Jens Eltze

Their contributions focus on semiconductor technologies relevant to electric vehicles and power electronics, reflecting interdisciplinary engagement between electrical engineering and automotive applications. The range of topics studied also indicates an involvement in improving energy efficiency and semiconductor device design.

Best Publications

  • Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact

    Anup Bhalla;Sik K. Lui

  • Nanotube semiconductor devices

    Hamza Yilmaz;Xiaobin Wang;Anup Bhalla;John Chen

  • Shielded gate trench (SGT) MOSFET devices and manufacturing processes

    Anup Bhalla;Sik K. Lui

  • Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode

    Madhur Bobde;Lingpeng Guan;Anup Bhalla;Hamza Yilmaz

  • MOSFET using gate work function engineering for switching applications

    Anup Bhalla;Sik K. Lui

  • Self aligned trench mosfet with integrated diode and manufacturing method thereof

    Lui Sik;Bhalla Anup

  • Tvs with low capacitance & forward voltage drop with depleted scr as steering diode

    Madhur Bobde;Lingpeng Guan;Anup Bhalla;Limin Weng

  • Integrated circuit package for semiconductor devices with improved electric resistance and inductance

    Leeshawn Luo;Anup Bhalla;Yueh-Se Ho;Sik K. Lui

  • Stacked dual chip package having leveling projections

    Hamza Yilmaz;Xiaotian Zhang;Yan Xun Xue;Anup Bhalla

  • Power mosfet device structure for high frequency applications and its manufacturing method and application of the same

    Anup Bhalla;Daniel S Ng;Tiesheng Li;Sik K Lui

  • Nano mosfet with trench bottom oxide shielded and third dimensional p-body contact

    Hamza Yilmaz;Daniel Ng;Daniel Calafut;Madhur Bobde

  • Planar split-gate high-performance MOSFET structure and manufacturing method

    Anup Bhalla;Francois Hebert;Daniel S. Ng

  • Nano-tube MOSFET technology and devices

    Hamza Yilmaz;Daniel Ng;Lingpeng Guan;Anup Bhalla

  • Shielded gate trench MOSFET device and fabrication

    John Chen;Il Kwan Lee;Hong Chang;Wenjun Li

  • Multiple power semiconductor package

    Leeshawn Luo;Anup Bhalla;Sik Lui;Xiaotian Zhang

  • Method for forming nanotube semiconductor devices

    Hamza Yilmaz;Xiaobin Wang;Anup Bhalla;John Chen

  • Approach to integrate Schottky in MOSFET

    Sik Lui;Yi Su;Daniel Ng;Anup Bhalla

  • Oxide terminated trench mosfet with three or four masks

    Sik Lui;Anup Bhalla

  • Self-aligned slotted accumulation-mode field effect transistor (AccuFET) structure and method

    François Hébert;Madhur Bobde;Anup Bhalla

  • Cascode scheme for improved device switching behavior

    Anup Bhalla;Sik Lui;Jun Hu;Fei Wang

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