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D-Index & Metrics

Materials Science

D-Index
91
Citations
36333
World Ranking
1584
National Ranking
494

Gerald Lucovsky publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Gerald Lucovsky sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 1,060 publications — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Gerald Lucovsky D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Gerald Lucovsky sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 91 D-Index — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 1976 - Fellow of American Physical Society (APS)

Overview

Gerald Lucovsky is affiliated with North Carolina State University in the United States. Their professional profile includes a focus on academic research within the scientific community.

Lucovsky was recognized as a Fellow of the American Physical Society (APS) in 1976, an acknowledgment that indicates their involvement and contributions within the physics community.

The available information does not list specific research papers, frequent co-authors, or notable publication venues linked to Lucovsky, nor does it specify particular fields, subfields, or main topics of study. There is also no record of book publications associated with this scientist.

The lack of detailed publication data or extensive research topics suggests that publicly available records or databases may not comprehensively cover their research output. Nonetheless, their affiliation with a major research institution and recognition by APS situate them within the academic scientific field.

Best Publications

  • Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition

    P. G. Pai;S. S. Chao;Y. Takagi;G. Lucovsky

  • Structural interpretation of the vibrational spectra of a-Si: H alloys

    G. Lucovsky;R. J. Nemanich;J. C. Knights

  • Raman scattering characterization of carbon bonding in diamond and diamondlike thin films

    R. J. Nemanich;J. T. Glass;G. Lucovsky;R. E. Shroder

  • The Physics of Hydrogenated Amorphous Silicon I

    John D. Joannopoulos;Gerald Lucovsky

  • Low‐temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopy

    G. Lucovsky;M. J. Mantini;J. K. Srivastava;E. A. Irene

  • Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping

    Wolter Siemons;Wolter Siemons;Gertjan Koster;Hideki Yamamoto;Hideki Yamamoto;Walter A. Harrison

  • Effects of the nearest neighbors and the alloy matrix on SiH stretching vibrations in the amorphous SiO r :H (0<r<2) alloy system

    D. V. Tsu;G. Lucovsky;B. N. Davidson

  • Chemical effects on the frequencies of Si-H vibrations in amorphous solids

    Unknown

  • Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

    Seung Gu Lim;Stas Kriventsov;Thomas N. Jackson;J. H. Haeni

  • Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition

    D. V. Tsu;G. Lucovsky;M. J. Mantini

  • Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition

    G. Lucovsky;P. D. Richard;D. V. Tsu;S. Y. Lin

  • Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films

    Unknown

  • Infrared active optical vibrations of graphite

    R.J. Nemanich;G. Lucovsky;S.A. Solin

  • Hydrogen localization near boron in silicon

    J. I. Pankove;P. J. Zanzucchi;C. W. Magee;G. Lucovsky

  • Photoeffects in Nonuniformly Irradiated p‐n Junctions

    Gerald Lucovsky

  • On the photoionization of deep impurity centers in semiconductors

    Unknown

  • Defects in plasma-deposited a-Si: H

    J.C. Knights;G. Lucovsky;R.J. Nemanich

  • Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys

    G. Lucovsky;G. B. Rayner

  • Plasma enhanced chemical vapor deposition: Differences between direct and remote plasma excitation

    G. Lucovsky;D. V. Tsu

  • Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition

    Robert S. Johnson;Gerald Lucovsky;Isreal Baumvol

  • Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

    G. Lucovsky;Y. Wu;H. Niimi;V. Misra

  • Modeled tunnel currents for high dielectric constant dielectrics

    E.M. Vogel;K.Z. Ahmed;B. Hornung;W.K. Henson

  • Local bonding environments of Si–OH groups in SiO2 deposited by remote plasma‐enhanced chemical vapor deposition and incorporated by postdeposition exposure to water vapor

    J. A. Theil;D. V. Tsu;M. W. Watkins;S. S. Kim

  • Hydrogen bonding in silicon-hydrogen alloys

    J. C. Knights;G. Lucovsky;R. J. Nemanich

Frequent Co-Authors

Robert Nemanich
Robert Nemanich Arizona State University
Hyungtak Seo
Hyungtak Seo Ajou University
Gregory N. Parsons
Gregory N. Parsons North Carolina State University
Christopher L. Hinkle
Christopher L. Hinkle University of Notre Dame
Darrell G. Schlom
Darrell G. Schlom Cornell University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Jay Hauser
Jay Hauser University of California, Los Angeles
Harald Ade
Harald Ade North Carolina State University
Leonard J. Brillson
Leonard J. Brillson The Ohio State University

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