Gerald Lucovsky

Research.com Recognitions

• 1976 - Fellow of American Physical Society (APS)

Overview

Best Publications

• Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition

  P. G. Pai;S. S. Chao;Y. Takagi;G. Lucovsky

  1109
  Citations

• Structural interpretation of the vibrational spectra of a-Si: H alloys

  G. Lucovsky;R. J. Nemanich;J. C. Knights

  1037
  Citations

• Raman scattering characterization of carbon bonding in diamond and diamondlike thin films

  R. J. Nemanich;J. T. Glass;G. Lucovsky;R. E. Shroder

  932
  Citations

• The Physics of Hydrogenated Amorphous Silicon I

  John D. Joannopoulos;Gerald Lucovsky

  651
  Citations

• Low‐temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopy

  G. Lucovsky;M. J. Mantini;J. K. Srivastava;E. A. Irene

  545
  Citations

• Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping

  Wolter Siemons;Wolter Siemons;Gertjan Koster;Hideki Yamamoto;Hideki Yamamoto;Walter A. Harrison

  543
  Citations

• Effects of the nearest neighbors and the alloy matrix on SiH stretching vibrations in the amorphous SiO r :H (0<r<2) alloy system

  D. V. Tsu;G. Lucovsky;B. N. Davidson

  532
  Citations

• Chemical effects on the frequencies of Si-H vibrations in amorphous solids

  Unknown

  507
  Citations

• Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

  Seung Gu Lim;Stas Kriventsov;Thomas N. Jackson;J. H. Haeni

  476
  Citations

• Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition

  D. V. Tsu;G. Lucovsky;M. J. Mantini

  428
  Citations

• Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition

  G. Lucovsky;P. D. Richard;D. V. Tsu;S. Y. Lin

  405
  Citations

• Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films

  Unknown

  389
  Citations

• Infrared active optical vibrations of graphite

  R.J. Nemanich;G. Lucovsky;S.A. Solin

  351
  Citations

• Hydrogen localization near boron in silicon

  J. I. Pankove;P. J. Zanzucchi;C. W. Magee;G. Lucovsky

  314
  Citations

• Photoeffects in Nonuniformly Irradiated p‐n Junctions

  Gerald Lucovsky

  306
  Citations

• On the photoionization of deep impurity centers in semiconductors

  Unknown

  302
  Citations

• Defects in plasma-deposited a-Si: H

  J.C. Knights;G. Lucovsky;R.J. Nemanich

  298
  Citations

• Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys

  G. Lucovsky;G. B. Rayner

  298
  Citations

• Plasma enhanced chemical vapor deposition: Differences between direct and remote plasma excitation

  G. Lucovsky;D. V. Tsu

  260
  Citations

• Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition

  Robert S. Johnson;Gerald Lucovsky;Isreal Baumvol

  255
  Citations

• Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

  G. Lucovsky;Y. Wu;H. Niimi;V. Misra

  244
  Citations

• Modeled tunnel currents for high dielectric constant dielectrics

  E.M. Vogel;K.Z. Ahmed;B. Hornung;W.K. Henson

  228
  Citations

• Local bonding environments of Si–OH groups in SiO2 deposited by remote plasma‐enhanced chemical vapor deposition and incorporated by postdeposition exposure to water vapor

  J. A. Theil;D. V. Tsu;M. W. Watkins;S. S. Kim

  227
  Citations

• Hydrogen bonding in silicon-hydrogen alloys

  J. C. Knights;G. Lucovsky;R. J. Nemanich

  219
  Citations