World's Best Scientists 2026 revealed!
Darrell G. Schlom

Darrell G. Schlom

D-Index & Metrics

Materials Science

D-Index
124
Citations
73195
World Ranking
419
National Ranking
153

Darrell G. Schlom publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Darrell G. Schlom sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 1,028 publications — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Darrell G. Schlom D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Darrell G. Schlom sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 124 D-Index — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2017 - Member of the National Academy of Engineering For molecular-beam epitaxy "Materials-by-Design" of complex oxides impacting the integration of high dielectric oxides in semiconductor devices
  • 2010 - Fellow of the Materials Research Society
  • 2008 - MRS Medal, Materials Research Society For his fundamental contributions to the materials science of oxides underlying current and future electronic devices.

Overview

Darrell G. Schlom is affiliated with Cornell University in the United States and has an extensive publication record in materials science and physics. Their work predominantly focuses on the materials chemistry and electronic, optical, and magnetic properties of oxides, alongside condensed matter physics and electrical and electronic engineering.

The scientist's research covers significant topics such as:

  • Electronic and structural properties of oxides
  • Magnetic and transport properties of perovskites and related materials
  • Advanced condensed matter physics
  • Ferroelectric and piezoelectric materials
  • Multiferroics and related materials
  • Physics of superconductivity and magnetism
  • ZnO doping and properties

Their frequent co-authors include Kyle Shen, David A. Muller, Hanjong Paik, Hari P. Nair, and Lena F. Kourkoutis.

Their research contributions are published across various scientific journals, with a significant number of works appearing in:

  • arXiv (Cornell University)
  • APL Materials
  • Advanced Materials
  • Applied Physics Letters
  • Microscopy and Microanalysis

Several recent papers exemplify their research activity, including:

  • "Electron ptychography achieves atomic-resolution limits set by lattice vibrations," 2021, Science
  • "Heterogeneous integration of single-crystalline complex-oxide membranes," 2020, Nature
  • "Tilted spin current generated by the collinear antiferromagnet ruthenium dioxide," 2022, Nature Electronics
  • "Amorphization mechanism of SrIrO 3 electrocatalyst: How oxygen redox initiates ionic diffusion and structural reorganization," 2021, Science Advances
  • "Single-defect phonons imaged by electron microscopy," 2021, Nature

Darrell G. Schlom's work in the field has been recognized with several awards, including:

  • Member of the National Academy of Engineering (2017) for molecular-beam epitaxy "Materials-by-Design" of complex oxides impacting the integration of high dielectric oxides in semiconductor devices
  • Fellow of the Materials Research Society (2010)
  • MRS Medal from the Materials Research Society (2008) for fundamental contributions to the materials science of oxides underlying current and future electronic devices

Best Publications

  • Epitaxial BiFeO3 multiferroic thin film heterostructures.

    J. Wang;J. B. Neaton;H. Zheng;V. Nagarajan

  • Multiferroic BaTiO3-CoFe2O4 Nanostructures.

    H. Zheng;J. Wang;S. E. Lofland;Z. Ma

  • Room-temperature ferroelectricity in strained SrTiO3.

    J. H. Haeni;P. Irvin;W. Chang;R. Uecker

  • Enhancement of ferroelectricity in strained BaTiO3 thin films.

    K. J. Choi;M. Biegalski;Y. L. Li;A. Sharan

  • Thermodynamic stability of binary oxides in contact With silicon

    K. J. Hubbard;D. G. Schlom

  • Oxide Interfaces—An Opportunity for Electronics

    J. Mannhart;D. G. Schlom

  • A Strain-Driven Morphotropic Phase Boundary in BiFeO3

    R. J. Zeches;M. D. Rossell;J. X. Zhang;A. J. Hatt

  • Strain Tuning of Ferroelectric Thin Films

    Darrell G. Schlom;Long Qing Chen;Chang Beom Eom;Karin M. Rabe

  • Pentacene organic thin-film transistors-molecular ordering and mobility

    D.J. Gundlach;Y.Y. Lin;T.N. Jackson;S.F. Nelson

  • A strong ferroelectric ferromagnet created by means of spin–lattice coupling

    June Hyuk Lee;June Hyuk Lee;Lei Fang;Eftihia Vlahos;Xianglin Ke

  • Deterministic switching of ferromagnetism at room temperature using an electric field

    J.T. Heron;J.L. Bosse;Q. He;Y. Gao

  • Response to Comment on "Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures"

    J. Wang;A. Scholl;H. Zheng;S. B. Ogale

  • Observation of room-temperature polar skyrmions

    S. Das;Y. L. Tang;Y. L. Tang;Z. Hong;M. A. P. Gonçalves

  • A Thin Film Approach to Engineering Functionality into Oxides

    Darrell G. Schlom;Long Qing Chen;Xiaoqing Pan;Andreas Schmehl;Andreas Schmehl

  • Spontaneous Vortex Nanodomain Arrays at Ferroelectric Heterointerfaces

    Christopher T. Nelson;Benjamin Winchester;Yi Zhang;Yi Zhang;Sung Joo Kim

  • Crossover from incoherent to coherent phonon scattering in epitaxial oxide superlattices

    Jayakanth Ravichandran;Ajay K. Yadav;Ramez Cheaito;Pim B. Rossen

  • Electric field-induced magnetization switching in epitaxial columnar nanostructures

    F. Zavaliche;H. Zheng;L. Mohaddes-Ardabili;S. Y. Yang

  • Elastic strain engineering of ferroic oxides

    Darrell G. Schlom;Long Qing Chen;Craig J. Fennie;Venkatraman Gopalan

  • Photovoltaic effects in BiFeO3

    S. Y. Yang;L. W. Martin;S. J. Byrnes;S. J. Byrnes;T. E. Conry;T. E. Conry

  • In situ epitaxial MgB2 thin films for superconducting electronics.

    Xianghui Zeng;Alexej V. Pogrebnyakov;Armen Kotcharov;James E. Jones

Frequent Co-Authors

Xiaoqing Pan
Xiaoqing Pan University of California, Irvine
David A. Muller
David A. Muller Cornell University
Long Qing Chen
Long Qing Chen Pennsylvania State University
Ramamoorthy Ramesh
Ramamoorthy Ramesh Rice University
Chang-Beom Eom
Chang-Beom Eom University of Wisconsin–Madison
Venkatraman Gopalan
Venkatraman Gopalan Pennsylvania State University
Jürgen Schubert
Jürgen Schubert Forschungszentrum Jülich
Xiaoxing Xi
Xiaoxing Xi Temple University
Reinhard Uecker
Reinhard Uecker Leibniz Institute for Crystal Growth
Daniel C. Ralph
Daniel C. Ralph Cornell University

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