World's Best Scientists 2026 revealed!

Overview

Reinhard Uecker is affiliated with the Leibniz Institute for Crystal Growth in Germany. Their research primarily spans the field of engineering, with specific focus on electrical and electronic engineering, atomic and molecular physics and optics, materials chemistry, and renewable energy, sustainability, and the environment.

Their recent publications include two papers highlighting their areas of study and collaboration. One is titled Lithium Metal Penetration Induced by Electrodeposition through Solid Electrolytes: Example in Single-Crystal Li₆La₃ZrTaO₁₂ Garnet, published in 2023 through Technischen Universität Darmstadt. The other paper, Sensitization of SnO2 Single Crystals with Multidentate-Ligand-Capped PbS Colloid Quantum Dots to Enhance the Photocurrent Stability, was published in 2020 in ChemNanoMat.

Their research covers several main topics, including:

  • Advancements in Battery Materials
  • Advanced Battery Materials and Technologies
  • Semiconductor materials and interfaces
  • Quantum Dots Synthesis And Properties
  • Chalcogenide Semiconductor Thin Films
  • Advanced Photocatalysis Techniques

Frequent coauthors collaborating with Reinhard Uecker include:

  • Tushar Swamy
  • Richard Park
  • Brian W. Sheldon
  • Daniel Rettenwander
  • Lukas Porz

The scientist's work has been published in the following venues:

  • Technischen Universität Darmstadt
  • ChemNanoMat

This research profile reflects an interdisciplinary approach bridging materials science, engineering, and applied physics, with significant contributions to battery materials and semiconductor interfaces.

Best Publications

  • Room-temperature ferroelectricity in strained SrTiO3.

    J. H. Haeni;P. Irvin;W. Chang;R. Uecker

  • Enhancement of ferroelectricity in strained BaTiO3 thin films.

    K. J. Choi;M. Biegalski;Y. L. Li;A. Sharan

  • Mechanism of Lithium Metal Penetration through Inorganic Solid Electrolytes

    Lukas Porz;Lukas Porz;Tushar Swamy;Brian W. Sheldon;Daniel Rettenwander

  • A strong ferroelectric ferromagnet created by means of spin–lattice coupling

    June Hyuk Lee;June Hyuk Lee;Lei Fang;Eftihia Vlahos;Xianglin Ke

  • On the bulk β-Ga2O3 single crystals grown by the Czochralski method

    Zbigniew Galazka;Klaus Irmscher;Reinhard Uecker;Rainer Bertram

  • Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

    K. Irmscher;Z. Galazka;M. Pietsch;R. Uecker

  • Elastic strain engineering of ferroic oxides

    Darrell G. Schlom;Long Qing Chen;Craig J. Fennie;Venkatraman Gopalan

  • Czochralski growth and characterization of β-Ga2O3 single crystals

    Z. Galazka;R. Uecker;K. Irmscher;M. Albrecht

  • Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

    Seung Gu Lim;Stas Kriventsov;Thomas N. Jackson;J. H. Haeni

  • Experimental electronic structure of In 2 O 3 and Ga 2 O 3

    Christoph Janowitz;Valentina Scherer;Mansour Mohamed;Alica Krapf

  • Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method

    Zbigniew Galazka;Reinhard Uecker;Detlef Klimm;Klaus Irmscher

  • Exploiting dimensionality and defect mitigation to create tunable microwave dielectrics

    Che Hui Lee;Che Hui Lee;Nathan D. Orloff;Nathan D. Orloff;Turan Birol;Ye Zhu

  • Lithium Metal Penetration Induced by Electrodeposition through Solid Electrolytes: Example in Single-Crystal Li6La3ZrTaO12 Garnet

    Tushar Swamy;Richard Park;Brian W. Sheldon;Daniel Rettenwander

  • The electronic structure of β-Ga2O3

    M. Mohamed;C. Janowitz;I. Unger;R. Manzke

  • Growth of M-plane GaN(1 1̄ 0 0) on γ-LiAlO2(1 0 0)

    P Waltereit;O Brandt;M Ramsteiner;R Uecker

  • Properties of rare-earth scandate single crystals (Re = Nd-Dy)

    R. Uecker;B. Velickov;D. Klimm;R. Bertram

  • Slow components in the photoluminescence and scintillation decays of PbWO4 single crystals

    M. Nikl;K. Nitsch;K. Polak;E. Mihokova

  • Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

    Hanjong Paik;Zhen Chen;Edward Lochocki;H. Ariel Seidner

  • Orthorhombic BiFeO 3

    J. C. Yang;Q. He;Q. He;S. J. Suresha;C. Y. Kuo

  • On the Crystallization of Terbium Aluminium Garnet

    S. Ganschow;D. Klimm;P. Reiche;R. Uecker

Frequent Co-Authors

Darrell G. Schlom
Darrell G. Schlom Cornell University
Paul Heitjans
Paul Heitjans University of Hannover
Venkatraman Gopalan
Venkatraman Gopalan Pennsylvania State University
Michael D. Biegalski
Michael D. Biegalski Oak Ridge National Laboratory
David A. Muller
David A. Muller Cornell University
Long Qing Chen
Long Qing Chen Pennsylvania State University
Craig J. Fennie
Craig J. Fennie Cornell University
Susan Trolier-McKinstry
Susan Trolier-McKinstry Pennsylvania State University
Xiaoqing Pan
Xiaoqing Pan University of California, Irvine
Jürgen Popp
Jürgen Popp Friedrich Schiller University Jena

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