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Clement Merckling

Clement Merckling

Imec
Belgium

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 33 6117 5873 129 125 239 4190

Clement Merckling publications per year

The chart shows the history of publications by Clement Merckling between 2004 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Clement Merckling published across 22 years, from 2004 to 2025, averaging 13.5 papers a year. Output peaked at 34 publications in 2011. 32 of the 298 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 2004 to 2025. Vertical axis: number of publications, 0 to 34. Peak 34 publications in 2011. 2004: 4 publications 2005: 1 publication 2006: 4 publications 2007: 9 publications 2008: 9 publications 2009: 20 publications 2010: 12 publications 2011: 34 publications 2012: 25 publications 2013: 18 publications 2014: 31 publications 2015: 21 publications 2016: 27 publications 2017: 8 publications 2018: 10 publications 2019: 9 publications 2020: 9 publications 2021: 4 publications 2022: 7 publications 2023: 4 publications 2024: 8 publications 2025: 24 publications
2004 2025

298 publications in total across all disciplines

View publications per year as a table
Clement Merckling: publications per year, 2004 to 2025
Year Publications
2004 4
2005 1
2006 4
2007 9
2008 9
2009 20
2010 12
2011 34
2012 25
2013 18
2014 31
2015 21
2016 27
2017 8
2018 10
2019 9
2020 9
2021 4
2022 7
2023 4
2024 8
2025 24
Total 298
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Clement Merckling publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Clement Merckling sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 234–253 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 239 publications — 41st percentile

41% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399 239
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Clement Merckling D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Clement Merckling sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 33 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262 33
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Clement Merckling is affiliated with Imec in Belgium and has contributed extensively to the field of materials science, with significant overlap into physics and engineering. Their research focuses primarily on materials chemistry and electrical and electronic engineering, with work also touching on atomic and molecular physics, optics, and condensed matter physics.

The scientist's recent publications showcase a strong emphasis on two-dimensional materials and epitaxial growth techniques. Notable papers include:

  • Observation of the radiative decay of the 229Th nuclear clock isomer, 2023, Nature
  • Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling, 2021, Applied Materials Today
  • On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides, 2020, ACS Applied Materials & Interfaces
  • Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy, 2020, Applied Physics Letters
  • Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2, 2020, 2D Materials

Their work addresses key topics such as electronic and structural properties of oxides, 2D materials and their applications, ferroelectric and piezoelectric materials, semiconductor materials and devices, MXene and MAX phase materials, topological materials and phenomena, and semiconductor quantum structures and devices.

Frequent coauthors in their research include Stefan De Gendt, Marc Heyns, Wouter Mortelmans, Stefanie Sergeant, and I. Ahmed, illustrating a collaborative research network.

Merckling's research findings have been disseminated in a range of publication venues, reflecting a multidisciplinary approach. These venues include:

  • arXiv (Cornell University)
  • Applied Physics Letters
  • Journal of Applied Physics
  • ACS Applied Materials & Interfaces
  • ECS Journal of Solid State Science and Technology

The scientist's expertise spans various fields and subfields, particularly focusing on materials chemistry, electrical and electronic engineering, and atomic and molecular physics, connected through applied research in electronic, optical, and magnetic materials. Their body of work contributes to the understanding of material properties at the nanoscale and device-level integration challenges.

Best Publications

  • Room-temperature InP distributed feedback laser array directly grown on silicon

    Zhechao Wang;Bin Tian;Marianna Pantouvaki;Weiming Guo

  • Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    Benjamin Vincent;Federica Gencarelli;Hugo Bender;Clement Merckling

  • METHOD FOR MANUFACTURING LOW DEFECT INTERFACE BETWEEN DIELECTRIC, AND GROUP III/V COMPOUND

    Merckling Clement

  • Novel Light Source Integration Approaches for Silicon Photonics

    Zhechao Wang;Amin Abbasi;Utsav Deepak Dave;Andreas De Groote

  • Site Selective Integration of III–V Materials on Si for Nanoscale Logic and Photonic Devices

    Mohanchand Paladugu;Clement Merckling;Roger Loo;Olivier Richard

  • Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering

    Clement Merckling;Niamh Waldron;Sijia Jiang;W Guo

  • InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

    Niamh Waldron;Clement Merckling;Lieve Teugels;Patrick Ong

  • Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing

    Y. C. Chang;C. Merckling;J. Penaud;C. Y. Lu

  • An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

    N. Waldron;C. Merckling;W. Guo;P. Ong

  • Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001)

    G. Delhaye;C. Merckling;M. El-Kazzi;G. Saint-Girons

  • Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects

    Eddy Simoen;Dennis Han-Chung Lin;A. Alian;G. Brammertz

  • Capacitance–Voltage Characterization of GaAs–Oxide Interfaces

    G Brammertz;H. C Lin;K Martens;D Mercier

  • Electrical properties of III-V/oxide interfaces

    Guy Brammertz;H.C Lin;Koen Martens;Ali Reza Alian

  • Polytypic InP Nanolaser Monolithically Integrated on (001) Silicon

    Zhechao Wang;Bin Tian;Mohanchand Paladugu;Marianna Pantouvaki

  • Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

    V. V. Afanas'ev;M. Houssa;A. Stesmans;C. Merckling

  • Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

    L. Chu;C. Merckling;A. Alian;J. Dekoster

  • Germanium for advanced CMOS anno 2009: a SWOT analysis

    M. Caymax;G. Eneman;F. Bellenger;C. Merckling

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    M. Heyns;A. Alian;G. Brammertz;M. Caymax

  • Room Temperature O-band DFB Laser Array Directly Grown on (001) Silicon.

    Bin Tian;Zhechao Wang;Zhechao Wang;Marianna Pantouvaki;Philippe Absil

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    Marc Heyns;Ali Reza Alian;Guy Brammertz;Matty Caymax

  • High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology

    Florence Bellenger;Brice De Jaeger;Clement Merckling;Michel Houssa

Frequent Co-Authors

Matty Caymax
Matty Caymax Imec
Nadine Collaert
Nadine Collaert Imec
Marc Meuris
Marc Meuris Hasselt University
Wilfried Vandervorst
Wilfried Vandervorst Imec
Eddy Simoen
Eddy Simoen Ghent University
Michel Houssa
Michel Houssa KU Leuven
Geert Eneman
Geert Eneman Imec
Roger Loo
Roger Loo Imec
Hugo Bender
Hugo Bender Imec
Aaron Thean
Aaron Thean National University of Singapore

External Links

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Best Scientists Citing Clement Merckling

Nadine Collaert

Nadine Collaert

Imec

Publications: 71

Eddy Simoen

Eddy Simoen

Ghent University

Publications: 55

Aaron Thean

Aaron Thean

National University of Singapore

Publications: 45

Kei May Lau

Kei May Lau

Hong Kong University of Science and Technology

Publications: 42

Roger Loo

Roger Loo

Imec

Publications: 39

Jerome Mitard

Jerome Mitard

Imec

Publications: 36

Wilfried Vandervorst

Wilfried Vandervorst

Imec

Publications: 34

John E. Bowers

John E. Bowers

University of California, Santa Barbara

Publications: 30

Naoto Horiguchi

Naoto Horiguchi

Imec

Publications: 26

Guido Groeseneken

Guido Groeseneken

Imec

Publications: 25

Daniele Caimi

Daniele Caimi

IBM (United States)

Publications: 25

Cor Claeys

Cor Claeys

KU Leuven

Publications: 24

John Tolle

John Tolle

Arizona State University

Publications: 24

Matty Caymax

Matty Caymax

Imec

Publications: 23

Kirsten Moselund

Kirsten Moselund

Paul Scherrer Institute

Publications: 22

Yee-Chia Yeo

Yee-Chia Yeo

National University of Singapore

Publications: 22

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