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Clement Merckling

Clement Merckling

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
4190
World Ranking
6118
National Ranking
130

Overview

Clement Merckling is affiliated with Imec in Belgium and has contributed extensively to the field of materials science, with significant overlap into physics and engineering. Their research focuses primarily on materials chemistry and electrical and electronic engineering, with work also touching on atomic and molecular physics, optics, and condensed matter physics.

The scientist's recent publications showcase a strong emphasis on two-dimensional materials and epitaxial growth techniques. Notable papers include:

  • Observation of the radiative decay of the 229Th nuclear clock isomer, 2023, Nature
  • Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling, 2021, Applied Materials Today
  • On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides, 2020, ACS Applied Materials & Interfaces
  • Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy, 2020, Applied Physics Letters
  • Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2, 2020, 2D Materials

Their work addresses key topics such as electronic and structural properties of oxides, 2D materials and their applications, ferroelectric and piezoelectric materials, semiconductor materials and devices, MXene and MAX phase materials, topological materials and phenomena, and semiconductor quantum structures and devices.

Frequent coauthors in their research include Stefan De Gendt, Marc Heyns, Wouter Mortelmans, Stefanie Sergeant, and I. Ahmed, illustrating a collaborative research network.

Merckling's research findings have been disseminated in a range of publication venues, reflecting a multidisciplinary approach. These venues include:

  • arXiv (Cornell University)
  • Applied Physics Letters
  • Journal of Applied Physics
  • ACS Applied Materials & Interfaces
  • ECS Journal of Solid State Science and Technology

The scientist's expertise spans various fields and subfields, particularly focusing on materials chemistry, electrical and electronic engineering, and atomic and molecular physics, connected through applied research in electronic, optical, and magnetic materials. Their body of work contributes to the understanding of material properties at the nanoscale and device-level integration challenges.

Best Publications

  • Room-temperature InP distributed feedback laser array directly grown on silicon

    Zhechao Wang;Bin Tian;Marianna Pantouvaki;Weiming Guo

  • Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    Benjamin Vincent;Federica Gencarelli;Hugo Bender;Clement Merckling

  • METHOD FOR MANUFACTURING LOW DEFECT INTERFACE BETWEEN DIELECTRIC, AND GROUP III/V COMPOUND

    Merckling Clement

  • Novel Light Source Integration Approaches for Silicon Photonics

    Zhechao Wang;Amin Abbasi;Utsav Deepak Dave;Andreas De Groote

  • Site Selective Integration of III–V Materials on Si for Nanoscale Logic and Photonic Devices

    Mohanchand Paladugu;Clement Merckling;Roger Loo;Olivier Richard

  • Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering

    Clement Merckling;Niamh Waldron;Sijia Jiang;W Guo

  • InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

    Niamh Waldron;Clement Merckling;Lieve Teugels;Patrick Ong

  • Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing

    Y. C. Chang;C. Merckling;J. Penaud;C. Y. Lu

  • An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

    N. Waldron;C. Merckling;W. Guo;P. Ong

  • Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001)

    G. Delhaye;C. Merckling;M. El-Kazzi;G. Saint-Girons

  • Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects

    Eddy Simoen;Dennis Han-Chung Lin;A. Alian;G. Brammertz

  • Capacitance–Voltage Characterization of GaAs–Oxide Interfaces

    G Brammertz;H. C Lin;K Martens;D Mercier

  • Electrical properties of III-V/oxide interfaces

    Guy Brammertz;H.C Lin;Koen Martens;Ali Reza Alian

  • Polytypic InP Nanolaser Monolithically Integrated on (001) Silicon

    Zhechao Wang;Bin Tian;Mohanchand Paladugu;Marianna Pantouvaki

  • Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

    V. V. Afanas'ev;M. Houssa;A. Stesmans;C. Merckling

  • Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

    L. Chu;C. Merckling;A. Alian;J. Dekoster

  • Germanium for advanced CMOS anno 2009: a SWOT analysis

    M. Caymax;G. Eneman;F. Bellenger;C. Merckling

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    M. Heyns;A. Alian;G. Brammertz;M. Caymax

  • Room Temperature O-band DFB Laser Array Directly Grown on (001) Silicon.

    Bin Tian;Zhechao Wang;Zhechao Wang;Marianna Pantouvaki;Philippe Absil

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    Marc Heyns;Ali Reza Alian;Guy Brammertz;Matty Caymax

  • High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology

    Florence Bellenger;Brice De Jaeger;Clement Merckling;Michel Houssa

Frequent Co-Authors

Marc Meuris
Marc Meuris Hasselt University
Eddy Simoen
Eddy Simoen Ghent University
Michel Houssa
Michel Houssa KU Leuven
Aaron Thean
Aaron Thean National University of Singapore

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