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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 31 6644 6381 99 93 172 3374

Kirsten Moselund publications per year

The chart shows the history of publications by Kirsten Moselund between 2004 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Kirsten Moselund published across 22 years, from 2004 to 2025, averaging 8.6 papers a year. Output peaked at 25 publications in 2021. 16 of the 190 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 2004 to 2025. Vertical axis: number of publications, 0 to 25. Peak 25 publications in 2021. 2004: 2 publications 2005: 4 publications 2006: 7 publications 2007: 6 publications 2008: 12 publications 2009: 4 publications 2010: 4 publications 2011: 4 publications 2012: 3 publications 2013: 2 publications 2014: 3 publications 2015: 8 publications 2016: 12 publications 2017: 13 publications 2018: 12 publications 2019: 19 publications 2020: 15 publications 2021: 25 publications 2022: 10 publications 2023: 9 publications 2024: 14 publications 2025: 2 publications
2004 2025

190 publications in total across all disciplines

View publications per year as a table
Kirsten Moselund: publications per year, 2004 to 2025
Year Publications
2004 2
2005 4
2006 7
2007 6
2008 12
2009 4
2010 4
2011 4
2012 3
2013 2
2014 3
2015 8
2016 12
2017 13
2018 12
2019 19
2020 15
2021 25
2022 10
2023 9
2024 14
2025 2
Total 190
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Kirsten Moselund publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Kirsten Moselund sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 154–173 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 172 publications — 20th percentile

20% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403 172
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Kirsten Moselund D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Kirsten Moselund sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 31 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 31 D-Index — 6th percentile

6% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257 31
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Kirsten Moselund is affiliated with the Paul Scherrer Institute in Switzerland. Their research spans several fields within engineering and physics, focusing on electrical and electronic engineering as well as atomic and molecular physics and optics.

The main topics covered in their work include photonic and optical devices, semiconductor quantum structures and devices, nanowire synthesis and applications, semiconductor lasers and optical devices, neural networks and reservoir computing, advanced fiber laser technologies, and advancements in semiconductor devices and circuit design.

Recent publications by Kirsten Moselund demonstrate involvement in cutting-edge research related to nanowire photodetectors, tunnel field-effect transistors, and photodiodes integrated on silicon platforms. Significant papers include:

  • High-speed III-V nanowire photodetector monolithically integrated on Si, 2020, Nature Communications
  • A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon, 2021, Nature Electronics
  • Waveguide coupled III-V photodiodes monolithically integrated on Si, 2022, Nature Communications
  • Heterogeneous Integration of III-V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics, 2021, IEEE Transactions on Electron Devices
  • Coupled VO2 Oscillators Circuit as Analog First Layer Filter in Convolutional Neural Networks, 2021, PubMed

Frequent co-authors collaborating with Moselund include Heinz Schmid, Markus Scherrer, Preksha Tiwari, Bernd Gotsmann, and Marilyne Sousa.

Kirsten Moselund's work is often published in recognized venues such as Zenodo (CERN European Organization for Nuclear Research), arXiv (Cornell University), ACS Photonics, IEEE Transactions on Electron Devices, and Nature Communications.

Best Publications

  • Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

    H. Schmid;Mattias Borg;K. Moselund;L. Gignac

  • High-speed III-V nanowire photodetector monolithically integrated on Si.

    Svenja Mauthe;Yannick Baumgartner;Marilyne Sousa;Qian Ding

  • Vertical III-V nanowire device integration on Si(100).

    Mattias Borg;Heinz Schmid;Kirsten E. Moselund;Giorgio Signorello

  • InAs–Si Nanowire Heterojunction Tunnel FETs

    K. E. Moselund;H. Schmid;C. Bessire;M. T. Bjork

  • Si-InAs heterojunction Esaki tunnel diodes with high current densities

    M. T. Björk;H. Schmid;C. D. Bessire;K. E. Moselund

  • A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon

    Clarissa Convertino;Cezar B. Zota;Heinz Schmid;Daniele Caimi

  • Lateral InAs/Si p-Type Tunnel FETs Integrated on Si—Part 2: Simulation Study of the Impact of Interface Traps

    Saurabh Sant;Kirsten Moselund;Davide Cutaia;Heinz Schmid

  • Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

    V. Pott;K.E. Moselund;D. Bouvet;L. De Michielis

  • Room temperature lasing from monolithically integrated gaas microdisks on Si

    Stephan Wirths;Benedikt Mayer;Heinz Schmid;Emanuel Lortscher

  • Waveguide coupled III-V photodiodes monolithically integrated on Si

    Pengyan Wen;Preksha Tiwari;Svenja Mauthe;Heinz Schmid

  • Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- $k$ Gate Dielectric

    K. E. Moselund;M. T. Bjork;H. Schmid;H. Ghoneim

  • High-Mobility GaSb Nanostructures Cointegrated with InAs on Si

    Mattias Borg;Heinz Schmid;Johannes Gooth;Marta D. Rossell;Marta D. Rossell

  • InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs

    H. Riel;K. E. Moselund;C. Bessire;M. T. Bjork

  • Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si

    Mattias Borg;Heinz Schmid;Kirsten E. Moselund;Davide Cutaia

  • III-V heterostructure tunnel field-effect transistor.

    C Convertino;C B Zota;H Schmid;A M Ionescu

  • Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

    K.E. Moselund;P. Dobrosz;S. Olsen;V. Pott

  • Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects

    Johannes Gooth;Mattias Borg;Heinz Schmid;Vanessa Schaller

  • Scaled resistively-coupled VO2 oscillators for neuromorphic computing

    Elisabetta Corti;Elisabetta Corti;Bernd Gotsmann;Kirsten Moselund;Adrian M. Ionescu

  • The High-Mobility Bended n-Channel Silicon Nanowire Transistor

    K.E. Moselund;M. Najmzadeh;P. Dobrosz;S.H. Olsen

  • Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics

    Daniele Caimi;Preksha Tiwari;Marilyne Sousa;Kirsten E. Moselund

  • Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

    L. De Michielis;L. Lattanzio;K. E. Moselund;H. Riel

Frequent Co-Authors

Heike Riel
Heike Riel IBM (United States)
Heinz Schmid
Heinz Schmid IBM (United States)
Adrian M. Ionescu
Adrian M. Ionescu École Polytechnique Fédérale de Lausanne
Siegfried Karg
Siegfried Karg IBM (United States)
Daniele Caimi
Daniele Caimi IBM (United States)
Bernd Gotsmann
Bernd Gotsmann IBM Research - Zurich
Mikael Björk
Mikael Björk Sol Voltaics (Sweden)
John Robertson
John Robertson University of Cambridge
Yusuf Leblebici
Yusuf Leblebici École Polytechnique Fédérale de Lausanne
Walter Riess
Walter Riess IBM Research - Zurich

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