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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
31
Citations
3374
World Ranking
6645
National Ranking
99

Overview

Kirsten Moselund is affiliated with the Paul Scherrer Institute in Switzerland. Their research spans several fields within engineering and physics, focusing on electrical and electronic engineering as well as atomic and molecular physics and optics.

The main topics covered in their work include photonic and optical devices, semiconductor quantum structures and devices, nanowire synthesis and applications, semiconductor lasers and optical devices, neural networks and reservoir computing, advanced fiber laser technologies, and advancements in semiconductor devices and circuit design.

Recent publications by Kirsten Moselund demonstrate involvement in cutting-edge research related to nanowire photodetectors, tunnel field-effect transistors, and photodiodes integrated on silicon platforms. Significant papers include:

  • High-speed III-V nanowire photodetector monolithically integrated on Si, 2020, Nature Communications
  • A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon, 2021, Nature Electronics
  • Waveguide coupled III-V photodiodes monolithically integrated on Si, 2022, Nature Communications
  • Heterogeneous Integration of III-V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics, 2021, IEEE Transactions on Electron Devices
  • Coupled VO2 Oscillators Circuit as Analog First Layer Filter in Convolutional Neural Networks, 2021, PubMed

Frequent co-authors collaborating with Moselund include Heinz Schmid, Markus Scherrer, Preksha Tiwari, Bernd Gotsmann, and Marilyne Sousa.

Kirsten Moselund's work is often published in recognized venues such as Zenodo (CERN European Organization for Nuclear Research), arXiv (Cornell University), ACS Photonics, IEEE Transactions on Electron Devices, and Nature Communications.

Best Publications

  • Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

    H. Schmid;Mattias Borg;K. Moselund;L. Gignac

  • High-speed III-V nanowire photodetector monolithically integrated on Si.

    Svenja Mauthe;Yannick Baumgartner;Marilyne Sousa;Qian Ding

  • Vertical III-V nanowire device integration on Si(100).

    Mattias Borg;Heinz Schmid;Kirsten E. Moselund;Giorgio Signorello

  • InAs–Si Nanowire Heterojunction Tunnel FETs

    K. E. Moselund;H. Schmid;C. Bessire;M. T. Bjork

  • Si-InAs heterojunction Esaki tunnel diodes with high current densities

    M. T. Björk;H. Schmid;C. D. Bessire;K. E. Moselund

  • A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon

    Clarissa Convertino;Cezar B. Zota;Heinz Schmid;Daniele Caimi

  • Lateral InAs/Si p-Type Tunnel FETs Integrated on Si—Part 2: Simulation Study of the Impact of Interface Traps

    Saurabh Sant;Kirsten Moselund;Davide Cutaia;Heinz Schmid

  • Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

    V. Pott;K.E. Moselund;D. Bouvet;L. De Michielis

  • Room temperature lasing from monolithically integrated gaas microdisks on Si

    Stephan Wirths;Benedikt Mayer;Heinz Schmid;Emanuel Lortscher

  • Waveguide coupled III-V photodiodes monolithically integrated on Si

    Pengyan Wen;Preksha Tiwari;Svenja Mauthe;Heinz Schmid

  • Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- $k$ Gate Dielectric

    K. E. Moselund;M. T. Bjork;H. Schmid;H. Ghoneim

  • High-Mobility GaSb Nanostructures Cointegrated with InAs on Si

    Mattias Borg;Heinz Schmid;Johannes Gooth;Marta D. Rossell;Marta D. Rossell

  • InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs

    H. Riel;K. E. Moselund;C. Bessire;M. T. Bjork

  • Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si

    Mattias Borg;Heinz Schmid;Kirsten E. Moselund;Davide Cutaia

  • III-V heterostructure tunnel field-effect transistor.

    C Convertino;C B Zota;H Schmid;A M Ionescu

  • Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

    K.E. Moselund;P. Dobrosz;S. Olsen;V. Pott

  • Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects

    Johannes Gooth;Mattias Borg;Heinz Schmid;Vanessa Schaller

  • Scaled resistively-coupled VO2 oscillators for neuromorphic computing

    Elisabetta Corti;Elisabetta Corti;Bernd Gotsmann;Kirsten Moselund;Adrian M. Ionescu

  • The High-Mobility Bended n-Channel Silicon Nanowire Transistor

    K.E. Moselund;M. Najmzadeh;P. Dobrosz;S.H. Olsen

  • Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics

    Daniele Caimi;Preksha Tiwari;Marilyne Sousa;Kirsten E. Moselund

  • Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

    L. De Michielis;L. Lattanzio;K. E. Moselund;H. Riel

Frequent Co-Authors

Heike Riel
Heike Riel IBM (United States)
Heinz Schmid
Heinz Schmid IBM (United States)
Adrian M. Ionescu
Adrian M. Ionescu École Polytechnique Fédérale de Lausanne
Siegfried Karg
Siegfried Karg IBM (United States)
Daniele Caimi
Daniele Caimi IBM (United States)
Bernd Gotsmann
Bernd Gotsmann IBM Research - Zurich
Mikael Björk
Mikael Björk Sol Voltaics (Sweden)
John Robertson
John Robertson University of Cambridge
Yusuf Leblebici
Yusuf Leblebici École Polytechnique Fédérale de Lausanne
Walter Riess
Walter Riess IBM Research - Zurich

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