World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
32
Citations
4597
World Ranking
6282
National Ranking
2075

Daniele Caimi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Daniele Caimi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 154 publications — 15th percentile

15% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Daniele Caimi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Daniele Caimi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 32 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Daniele Caimi is affiliated with IBM in the United States and conducts research predominantly in the fields of engineering and physics and astronomy. Their work mainly focuses on electrical and electronic engineering as well as atomic and molecular physics, and optics, reflecting a multidisciplinary approach to advanced photonic and optical technologies.

The research topics covered by Daniele Caimi include:

  • Photonic and Optical Devices
  • Advanced Fiber Laser Technologies
  • Photorefractive and Nonlinear Optics
  • Semiconductor materials and devices
  • Nanowire Synthesis and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Photonic Crystals and Applications

They have authored several recent papers published in notable scientific journals. Some of the significant publications include:

  • "Ultrafast tunable lasers using lithium niobate integrated photonics," 2023, Nature
  • "An integrated optical modulator operating at cryogenic temperatures," 2020, Nature Materials
  • "A ferroelectric multilevel non-volatile photonic phase shifter," 2022, Nature Photonics
  • "A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform," 2023, Nature Communications
  • "A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon," 2021, Nature Electronics

Daniele Caimi frequently collaborates with other researchers. Some of the most frequent co-authors include:

  • Paul Seidler
  • Youri Popoff
  • Simon Hönl
  • Marilyne Sousa
  • Annina Riedhauser

Their research has been published across multiple scientific venues, with recurring publications in the following:

  • Zenodo (CERN European Organization for Nuclear Research)
  • arXiv (Cornell University)
  • Conference on Lasers and Electro-Optics
  • Nature Photonics
  • Nature Communications

Best Publications

  • Large Pockels effect in micro- and nanostructured barium titanate integrated on silicon

    Stefan Abel;Felix Eltes;J. Elliott Ortmann;Andreas Messner

  • A strong electro-optically active lead-free ferroelectric integrated on silicon

    Stefan Abel;Thilo Stöferle;Chiara Marchiori;Christophe Rossel

  • A BaTiO 3 -Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform

    Felix Eltes;Christian Mai;Daniele Caimi;Marcel Kroh

  • An integrated optical modulator operating at cryogenic temperatures.

    Felix Eltes;Gerardo E Villarreal-Garcia;Daniele Caimi;Heinz Siegwart

  • A Hybrid Barium Titanate–Silicon Photonics Platform for Ultraefficient Electro-Optic Tuning

    Stefan Abel;Thilo Stoferle;Chiara Marchiori;Daniele Caimi

  • Low-Loss BaTiO3–Si Waveguides for Nonlinear Integrated Photonics

    Felix Eltes;Daniele Caimi;Florian Fallegger;Marilyne Sousa

  • Field-effect transistors with SrHfO3 as gate oxide

    C Rossel;B Mereu;C Marchiori;D Caimi

  • A ferroelectric multilevel non-volatile photonic phase shifter

    Unknown

  • Microstructure and ferroelectricity of BaTiO3 thin films on Si for integrated photonics

    Kristy J Kormondy;Youri Popoff;Marilyne Sousa;Felix Eltes

  • A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon

    Clarissa Convertino;Cezar B. Zota;Heinz Schmid;Daniele Caimi

  • Optical properties of epitaxial SrHfO3 thin films grown on Si

    M Sousa;C Rossel;C Marchiori;H Siegwart

  • Transition-metal-oxide-based resistance-change memories

    S. F. Karg;G. I. Meijer;J. G. Bednorz;C. T. Rettner

  • Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

    N. Daix;E. Uccelli;L. Czornomaz;D. Caimi

  • SrHfO3 as gate dielectric for future CMOS technology

    C. Rossel;M. Sousa;C. Marchiori;J. Fompeyrine

  • Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates

    L. Czornomaz;E. Uccelli;M. Sousa;V. Deshpande

  • Plasmonic Ferroelectric Modulators

    Andreas Messner;Felix Eltes;Ping Ma;Stefan Abel

  • Ultra-Low-Power Tuning in Hybrid Barium Titanate-Silicon Nitride Electro-Optic Devices on Silicon

    J. Elliott Ortmann;J. Elliott Ortmann;Felix Eltes;Daniele Caimi;Norbert Meier

  • CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs

    L. Czornomaz;M. El Kazzi;M. Hopstaken;D. Caimi

  • Microwave-to-optical conversion with a gallium phosphide photonic crystal cavity

    Simon Hönl;Youri Popoff;Daniele Caimi;Alberto Beccari

  • Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates

    L. Czornomaz;N. Daix;K. Cheng;D. Caimi

  • A BaTiO3-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform

    Felix Eltes;Christian Mai;Daniele Caimi;Marcel Kroh

  • Controlling tetragonality and crystalline orientation in BaTiO 3 nano-layers grown on Si

    S Abel;M Sousa;C Rossel;D Caimi

  • An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling

    L. Czornomaz;N. Daix;D. Caimi;M Sousa

Frequent Co-Authors

Kirsten Moselund
Kirsten Moselund Paul Scherrer Institute
Bert Jan Offrein
Bert Jan Offrein IBM Research - Zurich
David J. Webb
David J. Webb Aston University
Marta D. Rossell
Marta D. Rossell Swiss Federal Laboratories for Materials Science and Technology
Alexander A. Demkov
Alexander A. Demkov The University of Texas at Austin
Heinz Schmid
Heinz Schmid IBM (United States)
Rolf Erni
Rolf Erni Swiss Federal Laboratories for Materials Science and Technology
Juerg Leuthold
Juerg Leuthold ETH Zurich

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