Jean-Pierre Locquet

Overview

Best Publications

• Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain

  Jean-Pierre Locquet;J Perret;J Perret;J Fompeyrine;J Fompeyrine;E Machler

  801
  Citations

• Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins

  F. Nolting;A. Scholl;J. Stöhr;J. W. Seo

  600
  Citations

• Observation of antiferromagnetic domains in epitaxial thin films

  A. Scholl;J. Stöhr;J. Lüning;J. W. Seo

  431
  Citations

• Structural phase transition in YBa2Cu3O7−δ: the role of dimensionality for high temperature superconductivity☆

  Ik Schuller;Dg Hinks;Ma Beno;Dw Capone

  242
  Citations

• Direct growth of carbon nanotubes on carbon fibers: Effect of the CVD parameters on the degradation of mechanical properties of carbon fibers

  Niels De Greef;Luman Zhang;Arnaud Magrez;László Forró

  197
  Citations

• High-K dielectrics for the gate stack

  Jean-Pierre Locquet;Chiara Marchiori;Maryline Sousa;Jean Fompeyrine

  169
  Citations

• Antiferromagnetic LaFeO3 thin films and their effect on exchange bias

  Jin Won Seo;E.E. Fullerton;F. Nolting;A. Scholl

  150
  Citations

• Determination of the antiferromagnetic spin axis in epitaxial LaFeO-3 films by x-ray magnetic linear dichroism spectroscopy

  J. Luning;F. Nolting;F. Nolting;A. Scholl;H. Ohldag;H. Ohldag

  140
  Citations

• Field-effect transistors with SrHfO3 as gate oxide

  C Rossel;B Mereu;C Marchiori;D Caimi

  127
  Citations

• Block‐by‐block deposition: A new growth method for complex oxide thin films

  Jean‐Pierre Locquet;André Catana;Erich Mächler;Christoph Gerber

  117
  Citations

• Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

  V. Narayanan;V.K. Paruchuri;N.A. Bojarczuk;B.P. Linder

  112
  Citations

• Optical properties of epitaxial SrHfO3 thin films grown on Si

  M Sousa;C Rossel;C Marchiori;H Siegwart

  109
  Citations

• Carbon nanotube-grafted carbon fiber polymer composites: Damage characterization on the micro-scale

  Luman Zhang;Niels De Greef;Gerhard Kalinka;Bart Van Bilzen

  102
  Citations

• Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111) Si

  Jin Won Seo;J Fompeyrine;A Guiller;G Norga

  100
  Citations

• Enhancement-Mode Buried-Channel $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ MOSFETs With High- $\kappa$ Gate Dielectrics

  Y. Sun;E.W. Kiewra;S.J. Koester;N. Ruiz

  95
  Citations

• SrHfO3 as gate dielectric for future CMOS technology

  C. Rossel;M. Sousa;C. Marchiori;J. Fompeyrine

  91
  Citations

• Tensile strained GeSn on Si by solid phase epitaxy

  Ruben Lieten;Jin Won Seo;Stefan S. Decoster;André Vantomme

  85
  Citations

• Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers

  S J Koester;E W Kiewra;Yanning Sun;D A Neumayer

  84
  Citations

• Beam energy considerations for gold nano-particle enhanced radiation treatment.

  F Van den Heuvel;Jean-Pierre Locquet;S Nuyts

  84
  Citations

• Induced magnetic moments at a ferromagnet-antiferromagnet interface

  A. Hoffmann;A. Hoffmann;J. W. Seo;J. W. Seo;M. R. Fitzsimmons;H. Siegwart

  76
  Citations