The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where John G. Ekerdt sits on this spectrum.
This scientist: 385 publications — 75th percentile
75% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where John G. Ekerdt sits on this spectrum.
This scientist: 62 D-Index — 51st percentile
51% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
John G. Ekerdt is affiliated with The University of Texas at Austin in the United States. Their research spans across the fields of Engineering and Materials Science, with significant contributions to Electrical and Electronic Engineering and Materials Chemistry as subfields. Their work is focused on topics such as semiconductor materials and devices, electronic and structural properties of oxides, and ferroelectric and piezoelectric materials.
Their research topics also include catalytic processes in materials science, advanced memory and neural computing, ferroelectric and negative capacitance devices, and ZnO doping and properties.
Some of the recent papers authored or coauthored by John G. Ekerdt include:
Frequent coauthors in their publications include Himamshu C. Nallan, Brennan M. Coffey, Alexander A. Demkov, Agham Posadas, and Chon Hei Lam.
Their work has been published in a range of venues, notably the Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Physical Review Materials, ACS Nano, Energy Storage Materials, and the Journal of Applied Physics.
John G. Ekerdt has also contributed to book publications, including the 2024 release of the Handbook of Molecular Beam Epitaxy of Oxide Materials, published by World Scientific.
Their work has been recognized with the Fellow of the American Association for the Advancement of Science (AAAS) award received in 2012.
Matthew Colburn;Stephen C. Johnson;Michael D. Stewart;S. Damle
T. Bailey;B. J. Choi;M. Colburn;M. Meissl
Li Ji;Martin D. Mcdaniel;Shijun Wang;Agham-Bayan S Posadas
Joerg Schwitzgebel;John G. Ekerdt;Heinz Gerischer;Adam Heller
Deborah A. Neumayer;John G. Ekerdt
P. D. Kirsch;C. S. Kang;J. Lozano;J. C. Lee
Hyunwoo Kim;Chia Yun Chou;John G Ekerdt;Gyeong S Hwang
John G. Ekerdt;Alexis T. Bell
Songyan Jia;Blair J. Cox;Xinwen Guo;Z. Conrad Zhang
Clark C. Williams;Clark C. Williams;John G. Ekerdt;Jih Mirn Jehng;Franklin D. Hardcastle;Franklin D. Hardcastle
P. Ruchhoeft;M. Colburn;B. Choi;H. Nounu
Ming-Yuan He;John G. Ekerdt
N. B. Jackson;N. B. Jackson;C. M. Wang;C. M. Wang;Z. Luo;J. Schwitzgebel
Songyan Jia;Songyan Jia;Blair J. Cox;Xinwen Guo;Z. Conrad Zhang
D. J. Resnick;W. J. Dauksher;D. Mancini;K. J. Nordquist
Blair J. Cox;Songyan Jia;Songyan Jia;Z. Conrad Zhang;John G. Ekerdt
Matthew Colburn;Annette Grot;Marie N. Amistoso;Byung Jin Choi
P. D. Kirsch;M. A. Quevedo-Lopez;H. J. Li;Y. Senzaki
John G Ekerdt;K. J. Klabunde;J. R. Shapley;J. M. White
Chengqing Hu;Martin D. McDaniel;Agham-Bayan S Posadas;Alexander A Demkov
Blair J. Cox;John G. Ekerdt
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