World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
68
Citations
19305
World Ranking
4792
National Ranking
1268

Otto F. Sankey publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Otto F. Sankey sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 287 publications — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Otto F. Sankey D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Otto F. Sankey sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 68 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2000 - Fellow of American Physical Society (APS) Citation For developing realspace firstprinciples electronic structure methods with broad applications to materials problems

Overview

Otto F. Sankey is affiliated with Arizona State University in the United States. Their academic contributions focus primarily on the development and application of electronic structure methods in materials science.

Sankey received recognition from the American Physical Society in 2000, being named a Fellow for developing real-space first-principles electronic structure methods with broad applications to materials problems.

Their research areas are centered on electronic structure theory as applied to materials, with a particular emphasis on computational methods that facilitate understanding of material properties at the atomic and molecular levels.

Best Publications

  • Reproducible Measurement of Single-Molecule Conductivity

    X. D. Cui;A. Primak;A. Primak;X. Zarate;J. Tomfohr

  • Ab initio multicenter tight-binding model for molecular-dynamics simulations and other applications in covalent systems

    Otto F. Sankey;David J. Niklewski

  • Charge Transfer on the Nanoscale: Current Status

    David M. Adams;Louis Brus;Christopher E. D. Chidsey;Stephen Creager

  • Electronic structure approach for complex silicas.

    Alexander A. Demkov;José Ortega;Otto F. Sankey;Matthew P. Grumbach

  • Making electrical contacts to molecular monolayers

    X. D. Cui;X. Zarate;J. Tomfohr;O. F. Sankey

  • Changes in the Electronic Properties of a Molecule When It Is Wired into a Circuit

    X. D. Cui;A. Primak;A. Primak;X. Zarate;J. Tomfohr

  • Low-density framework form of crystalline silicon with a wide optical band gap

    Jan Gryko;Jan Gryko;Paul F. McMillan;Robert F. Marzke;Ganesh K. Ramachandran

  • Complex band structure, decay lengths, and Fermi level alignment in simple molecular electronic systems

    John K. Tomfohr;Otto F. Sankey

  • Wide-band-gap Si in open fourfold-coordinated clathrate structures.

    Gary B. Adams;Michael Okeeffe;Alexander A Demkov;Otto F. Sankey

  • Further developments in the local-orbital density-functional-theory tight-binding method

    James P. Lewis;Kurt R. Glaesemann;Gregory A. Voth;Jürgen Fritsch

  • Multicenter approach to the exchange-correlation interactions in ab initio tight-binding methods

    Pavel Jelínek;Pavel Jelínek;Hao Wang;James P. Lewis;Otto F. Sankey

  • Theoretical study of the lattice thermal conductivity in Ge framework semiconductors.

    Jianjun Dong;Jianjun Dong;Otto F. Sankey;Charles W. Myles

  • Predicted new low energy forms of carbon.

    Michael O’Keeffe;Gary B. Adams;Otto F. Sankey

  • Theoretical analysis of electron transport through organic molecules

    John Tomfohr;Otto F. Sankey

  • Energetics of Large Fullerenes: Balls, Tubes, and Capsules

    Gary B. Adams;Otto F. Sankey;John B. Page;Michael O'Keeffe

  • Electronic Signatures of all Four DNA Nucleosides in a Tunneling Gap

    Shuai Chang;Shuo Huang;Jin He;Feng Liang

  • Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO

    Unknown

  • Electronic decay constant of carotenoid polyenes from single-molecule measurements.

    Jin He;Fan Chen;Jun Li;Otto F. Sankey

  • Switching of a photochromic molecule on gold electrodes: single-molecule measurements

    Jin He;Fan Chen;Paul A Liddell;Joakim Andréasson

  • Molecular-dynamics determination of electronic and vibrational spectra, and equilibrium structures of small Si clusters.

    Otto F. Sankey;David J. Niklewski;D. A. Drabold;John D. Dow

  • Maximum entropy approach for linear scaling in the electronic structure problem.

    David A. Drabold;Otto F. Sankey

  • Semiempirical tight-binding band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnO

    Unknown

Frequent Co-Authors

Paul F. McMillan
Paul F. McMillan University College London
Alexander A. Demkov
Alexander A. Demkov The University of Texas at Austin
Stuart Lindsay
Stuart Lindsay Arizona State University
David A. Drabold
David A. Drabold Ohio University
Michael O'Keeffe
Michael O'Keeffe Arizona State University
Wolfgang Windl
Wolfgang Windl The Ohio State University
Jose Menendez
Jose Menendez Arizona State University
David K. Ferry
David K. Ferry Arizona State University
Hadis Morkoç
Hadis Morkoç Virginia Commonwealth University
John C. H. Spence
John C. H. Spence Arizona State University

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