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David A. Drabold

David A. Drabold

D-Index & Metrics

Materials Science

D-Index
58
Citations
10141
World Ranking
7802
National Ranking
1935

Overview

David A. Drabold is affiliated with Ohio University in the United States. Their research focuses primarily on materials science and engineering, with specific emphasis on materials chemistry and electrical and electronic engineering. They have also contributed to mechanical engineering, ceramics and composites, and atomic and molecular physics and optics.

Their main areas of study cover topics including graphene research and applications, machine learning in materials science, glass properties and applications, carbon nanotubes in composites, thermal properties of materials, nuclear materials and radiation effects, and thin-film transistor technologies.

Drabold's frequent co-authors include Chinonso Ugwumadu with 38 collaborations, K. Nepal with 20, Jason Trembly with 15, Rajendra Thapa with 13, and Yahya Al-Majali with 11.

Their publications have appeared most often in:

  • arXiv (Cornell University)
  • physica status solidi (b)
  • SSRN Electronic Journal
  • Physical review. B./Physical review. B
  • Carbon

Recent publications demonstrate a range of research interests and include:

  • Origins of structural and electronic transitions in disordered silicon, 2021, Nature
  • Radiation shielding properties of bismuth borate glasses doped with different concentrations of cadmium oxides, 2020, Ceramics International
  • Physical, structural, and shielding properties of cadmium bismuth borate-based glasses, 2020, Journal of Applied Physics
  • Ab Initio Simulation of Amorphous Graphite, 2022, Physical Review Letters
  • Electronic transport in copper-graphene composites, 2023, Applied Physics Letters

Best Publications

  • Origins of structural and electronic transitions in disordered silicon

    Volker L. Deringer;Noam Bernstein;Gábor Csányi;Chiheb Ben Mahmoud

  • Advances and applications in the FIREBALL ab initio tight-binding molecular-dynamics formalism

    James P. Lewis;Pavel Jelínek;José Ortega;Alexander A. Demkov

  • Properties of amorphous and crystalline titanium dioxide from first principles

    Binay Prasai;Bin Cai;M. Kylee Underwood;James P. Lewis

  • Energetics of Large Fullerenes: Balls, Tubes, and Capsules

    Gary B. Adams;Otto F. Sankey;John B. Page;Michael O'Keeffe

  • Theory of diamondlike amorphous carbon.

    D. A. Drabold;P. A. Fedders;Petra Stumm

  • Molecular-dynamics determination of electronic and vibrational spectra, and equilibrium structures of small Si clusters.

    Otto F. Sankey;David J. Niklewski;D. A. Drabold;John D. Dow

  • Maximum entropy approach for linear scaling in the electronic structure problem.

    David A. Drabold;Otto F. Sankey

  • ATOMISTIC STRUCTURE OF BAND-TAIL STATES IN AMORPHOUS SILICON

    Jianjun Dong;D. A. Drabold

  • Atomistic origin of urbach tails in amorphous silicon.

    Y. Pan;F. Inam;M. Zhang;D. A. Drabold

  • Topics in the theory of amorphous materials

    D. A. Drabold;D. A. Drabold;D. A. Drabold

  • Radiation shielding properties of bismuth borate glasses doped with different concentrations of cadmium oxides

    Y.S. Alajerami;Y.S. Alajerami;D. Drabold;M.H.A. Mhareb;Katherine Leslee A. Cimatu

  • Ab initio study of diamond C(100) surfaces.

    Sang H. Yang;David A. Drabold;James B. Adams

  • Theory of defects in semiconductors

    David A. Drabold;Stefan K. Estreicher

  • Density functional studies of small platinum clusters

    Sang H Yang;David A Drabold;James B Adams;Pablo Ordejón

  • AB INITIO MOLECULAR-DYNAMICS STUDY OF THE STRUCTURAL, VIBRATIONAL, AND ELECTRONIC PROPERTIES OF GLASSY GESE2

    Mark Cobb;D. A. Drabold;R. L. Cappelletti

  • Reverse Monte Carlo modeling of amorphous silicon

    Parthapratim Biswas;Raymond Atta-Fynn;D. A. Drabold

  • CAN AMORPHOUS GAN SERVE AS A USEFUL ELECTRONIC MATERIAL

    P. Stumm;D. A. Drabold

  • Structure determination of disordered materials from diffraction data.

    Matthew J. Cliffe;Martin T. Dove;D. A. Drabold;Andrew L. Goodwin;Andrew L. Goodwin

  • Order-N projection method for first-principles computations of electronic quantities and Wannier functions

    Uwe Stephan;David A. Drabold

  • Finite-temperature properties of amorphous silicon.

    David A. Drabold;P. A. Fedders;Stefan Klemm;Otto F. Sankey

  • Structure and physical properties of paracrystalline atomistic models of amorphous silicon

    P. M. Voyles;P. M. Voyles;N. Zotov;S. M. Nakhmanson;S. M. Nakhmanson;D. A. Drabold

Frequent Co-Authors

Stephen R. Elliott
Stephen R. Elliott University of Oxford
Otto F. Sankey
Otto F. Sankey Arizona State University
Pablo Ordejón
Pablo Ordejón Institut Català de Nanociència i Nanotecnologia
Paul M. Voyles
Paul M. Voyles University of Wisconsin–Madison
Himanshu Jain
Himanshu Jain Lehigh University
Richard M. Martin
Richard M. Martin University of Illinois at Urbana-Champaign
Alexander A. Demkov
Alexander A. Demkov The University of Texas at Austin
Gábor Csányi
Gábor Csányi University of Cambridge
Andrew L. Goodwin
Andrew L. Goodwin University of Oxford
Mark Wilson
Mark Wilson University of Oxford

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