World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
6726
World Ranking
4494
National Ranking
1594

Roy H. Olsson publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Roy H. Olsson sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 235 publications — 40th percentile

40% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Roy H. Olsson D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Roy H. Olsson sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Roy H. Olsson is affiliated with the University of Pennsylvania in the United States. Their research primarily spans the fields of engineering and materials science, with a particular focus on electrical and electronic engineering, biomedical engineering, materials chemistry, condensed matter physics, and atomic and molecular physics, and optics.

The scientist's work covers multiple key topics, including acoustic wave resonator technologies, GaN-based semiconductor devices and materials, ferroelectric and negative capacitance devices, ferroelectric and piezoelectric materials, semiconductor materials and devices, metal and thin film mechanics, and advanced memory and neural computing.

Olsson has published extensively, with frequent contributions to venues such as arXiv (Cornell University), Applied Physics Letters, Journal of Microelectromechanical Systems, ACS Nano, and Nano Letters.

Notable recent papers include:

  • Wurtzite and fluorite ferroelectric materials for electronic memory, 2023, Nature Nanotechnology
  • Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors, 2023, Nature Nanotechnology
  • Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory, 2021, Nano Letters
  • Aluminum scandium nitride-based metal-ferroelectric-metal diode memory devices with high on/off ratios, 2021, Applied Physics Letters
  • Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films, 2020, IEEE Electron Device Letters

Frequent collaborators include Deep Jariwala, Eric A. Stach, Pariasadat Musavigharavi, Kwan-Ho Kim, and Zichen Tang. These coauthors have contributed to a significant portion of the scientific output alongside Olsson.

Best Publications

  • Reduction in the Thermal Conductivity of Single Crystalline Silicon by Phononic Crystal Patterning

    Patrick E. Hopkins;Charles M. Reinke;Mehmet F. Su;Roy H. Olsson

  • Microfabricated phononic crystal devices and applications

    R H Olsson;I El-Kady

  • Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides

    Heedeuk Shin;Wenjun Qiu;Robert Jarecki;Jonathan A. Cox

  • A three-dimensional neural recording microsystem with implantable data compression circuitry

    R.H. Olsson;K.D. Wise

  • Piezoelectric aluminum nitride thin films for microelectromechanical systems

    Gianluca Piazza;Valeriy Felmetsger;Paul Muralt;Roy H. Olsson

  • Wurtzite and fluorite ferroelectric materials for electronic memory

    Unknown

  • Band-tunable and multiplexed integrated circuits for simultaneous recording and stimulation with microelectrode arrays

    R.H. Olsson;D.L. Buhl;A.M. Sirota;G. Buzsaki

  • In-plane MEMS-based nano-g accelerometer with sub-wavelength optical resonant sensor

    U. Krishnamoorthy;R.H. Olsson;G.R. Bogart;M.S. Baker

  • Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

    Unknown

  • A high electromechanical coupling coefficient SH0 Lamb wave lithium niobate micromechanical resonator and a method for fabrication

    Roy H. Olsson;Khalid Hattar;Sara J. Homeijer;Michael Wiwi

  • Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

    Xiwen Liu;Dixiong Wang;Kwan-Ho Kim;Keshava Katti

  • Microfabricated VHF acoustic crystals and waveguides

    Roy H. Olsson;Ihab F. El-Kady;Ihab F. El-Kady;Mehmet F. Su;Melanie R. Tuck

  • Phononic band-gap crystals for radio frequency communications

    I. El-Kady;R. H. Olsson;J. G. Fleming

  • Post-CMOS-Compatible Aluminum Nitride Resonant MEMS Accelerometers

    R.H. Olsson;K.E. Wojciechowski;M.S. Baker;M.R. Tuck

  • Aluminum scandium nitride-based metal-ferroelectric-metal diode memory devices with high on/off ratios

    Xiwen Liu;Jeffrey Zheng;Dixiong Wang;Pariasadat Musavigharavi

  • Silicon neural recording arrays with on-chip electronics for in-vivo data acquisition

    R.H. Olsson;M.N. Gulari;K.D. Wise

  • Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films

    Dixiong Wang;Jeffrey Zheng;Pariasadat Musavigharavi;Wanlin Zhu

  • Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and beyond

    Yiwen Song;Carlos Perez;Giovanni Esteves;James Spencer Lundh

  • Realization of a phononic crystal operating at gigahertz frequencies

    M. F. Su;R. H. Olsson;Z. C. Leseman;I. El-Kady

  • Event driven persistent sensing: Overcoming the energy and lifetime limitations in unattended wireless sensors

    Roy H. Olsson;Radoslav B. Bogoslovov;Christal Gordon

  • Post-CMOS Compatible Aluminum Nitride MEMS Filters and Resonant Sensors

    R.H. Olsson;J.G. Fleming;K.E. Wojciechowski;M.S. Baker

  • Phononic crystals operating in the gigahertz range with extremely wide band gaps

    Y. M. Soliman;M. F. Su;Z. C. Leseman;C. M. Reinke

  • A fully-integrated bandpass amplifier for extracellular neural recording

    R.H.I.I.I. Olsson;A.N. Gulari;K.D. Wise

Frequent Co-Authors

Patrick E. Hopkins
Patrick E. Hopkins University of Virginia
Eric A. Stach
Eric A. Stach University of Pennsylvania
Kensall D. Wise
Kensall D. Wise University of Michigan–Ann Arbor
Deep Jariwala
Deep Jariwala University of Pennsylvania
Susan Trolier-McKinstry
Susan Trolier-McKinstry Pennsylvania State University
György Buzsáki
György Buzsáki New York University
Richard B. Brown
Richard B. Brown University of Utah
David A. Czaplewski
David A. Czaplewski Argonne National Laboratory
Cherie R. Kagan
Cherie R. Kagan University of Pennsylvania

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