World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
6726
World Ranking
4494
National Ranking
1593

Overview

Roy H. Olsson is affiliated with the University of Pennsylvania in the United States. Their research primarily spans the fields of engineering and materials science, with a particular focus on electrical and electronic engineering, biomedical engineering, materials chemistry, condensed matter physics, and atomic and molecular physics, and optics.

The scientist's work covers multiple key topics, including acoustic wave resonator technologies, GaN-based semiconductor devices and materials, ferroelectric and negative capacitance devices, ferroelectric and piezoelectric materials, semiconductor materials and devices, metal and thin film mechanics, and advanced memory and neural computing.

Olsson has published extensively, with frequent contributions to venues such as arXiv (Cornell University), Applied Physics Letters, Journal of Microelectromechanical Systems, ACS Nano, and Nano Letters.

Notable recent papers include:

  • Wurtzite and fluorite ferroelectric materials for electronic memory, 2023, Nature Nanotechnology
  • Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors, 2023, Nature Nanotechnology
  • Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory, 2021, Nano Letters
  • Aluminum scandium nitride-based metal-ferroelectric-metal diode memory devices with high on/off ratios, 2021, Applied Physics Letters
  • Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films, 2020, IEEE Electron Device Letters

Frequent collaborators include Deep Jariwala, Eric A. Stach, Pariasadat Musavigharavi, Kwan-Ho Kim, and Zichen Tang. These coauthors have contributed to a significant portion of the scientific output alongside Olsson.

Best Publications

  • Reduction in the Thermal Conductivity of Single Crystalline Silicon by Phononic Crystal Patterning

    Patrick E. Hopkins;Charles M. Reinke;Mehmet F. Su;Roy H. Olsson

  • Microfabricated phononic crystal devices and applications

    R H Olsson;I El-Kady

  • Tailorable stimulated Brillouin scattering in nanoscale silicon waveguides

    Heedeuk Shin;Wenjun Qiu;Robert Jarecki;Jonathan A. Cox

  • A three-dimensional neural recording microsystem with implantable data compression circuitry

    R.H. Olsson;K.D. Wise

  • Piezoelectric aluminum nitride thin films for microelectromechanical systems

    Gianluca Piazza;Valeriy Felmetsger;Paul Muralt;Roy H. Olsson

  • Wurtzite and fluorite ferroelectric materials for electronic memory

    Unknown

  • Band-tunable and multiplexed integrated circuits for simultaneous recording and stimulation with microelectrode arrays

    R.H. Olsson;D.L. Buhl;A.M. Sirota;G. Buzsaki

  • In-plane MEMS-based nano-g accelerometer with sub-wavelength optical resonant sensor

    U. Krishnamoorthy;R.H. Olsson;G.R. Bogart;M.S. Baker

  • Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

    Unknown

  • A high electromechanical coupling coefficient SH0 Lamb wave lithium niobate micromechanical resonator and a method for fabrication

    Roy H. Olsson;Khalid Hattar;Sara J. Homeijer;Michael Wiwi

  • Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

    Xiwen Liu;Dixiong Wang;Kwan-Ho Kim;Keshava Katti

  • Microfabricated VHF acoustic crystals and waveguides

    Roy H. Olsson;Ihab F. El-Kady;Ihab F. El-Kady;Mehmet F. Su;Melanie R. Tuck

  • Phononic band-gap crystals for radio frequency communications

    I. El-Kady;R. H. Olsson;J. G. Fleming

  • Post-CMOS-Compatible Aluminum Nitride Resonant MEMS Accelerometers

    R.H. Olsson;K.E. Wojciechowski;M.S. Baker;M.R. Tuck

  • Aluminum scandium nitride-based metal-ferroelectric-metal diode memory devices with high on/off ratios

    Xiwen Liu;Jeffrey Zheng;Dixiong Wang;Pariasadat Musavigharavi

  • Silicon neural recording arrays with on-chip electronics for in-vivo data acquisition

    R.H. Olsson;M.N. Gulari;K.D. Wise

  • Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films

    Dixiong Wang;Jeffrey Zheng;Pariasadat Musavigharavi;Wanlin Zhu

  • Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and beyond

    Yiwen Song;Carlos Perez;Giovanni Esteves;James Spencer Lundh

  • Realization of a phononic crystal operating at gigahertz frequencies

    M. F. Su;R. H. Olsson;Z. C. Leseman;I. El-Kady

  • Event driven persistent sensing: Overcoming the energy and lifetime limitations in unattended wireless sensors

    Roy H. Olsson;Radoslav B. Bogoslovov;Christal Gordon

  • Post-CMOS Compatible Aluminum Nitride MEMS Filters and Resonant Sensors

    R.H. Olsson;J.G. Fleming;K.E. Wojciechowski;M.S. Baker

  • Phononic crystals operating in the gigahertz range with extremely wide band gaps

    Y. M. Soliman;M. F. Su;Z. C. Leseman;C. M. Reinke

  • A fully-integrated bandpass amplifier for extracellular neural recording

    R.H.I.I.I. Olsson;A.N. Gulari;K.D. Wise

Frequent Co-Authors

Patrick E. Hopkins
Patrick E. Hopkins University of Virginia
Eric A. Stach
Eric A. Stach University of Pennsylvania
Kensall D. Wise
Kensall D. Wise University of Michigan–Ann Arbor
Deep Jariwala
Deep Jariwala University of Pennsylvania
Susan Trolier-McKinstry
Susan Trolier-McKinstry Pennsylvania State University
Cherie R. Kagan
Cherie R. Kagan University of Pennsylvania
Joel R. Wendt
Joel R. Wendt Sandia National Laboratories
Gianluca Piazza
Gianluca Piazza Carnegie Mellon University
Paul Muralt
Paul Muralt École Polytechnique Fédérale de Lausanne

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