1998 - Fellow of American Physical Society (APS) Citation For insightful contributions and creative use of electron microscopy in determining mechanisms of strain relaxation in heteroepitaxial growth of semiconductor thin films
The scientist’s investigation covers issues in Condensed matter physics, Thin film, Dislocation, Epitaxy and Transmission electron microscopy. When carried out as part of a general Condensed matter physics research project, his work on Superlattice is frequently linked to work in Inverse, therefore connecting diverse disciplines of study. The Thin film study combines topics in areas such as Crystal growth, Mineralogy, Optics and Analytical chemistry.
His Dislocation study frequently links to other fields, such as Substrate. His studies deal with areas such as Relaxation, Chemical vapor deposition and Nucleation as well as Epitaxy. His Transmission electron microscopy research includes themes of Crystallography and Strain.
His scientific interests lie mostly in Condensed matter physics, Epitaxy, Thin film, Transmission electron microscopy and Silicon. His work carried out in the field of Condensed matter physics brings together such families of science as Crystallography and Nucleation. His Epitaxy study combines topics in areas such as Silicide, Solid solution, Optoelectronics, Germanium and Microstructure.
Francoise K. LeGoues combines subjects such as Crystal growth, Optics, Inorganic compound, Mineralogy and Alloy with his study of Thin film. His Transmission electron microscopy study incorporates themes from Scattering, Molecular beam epitaxy, Metastability, Analytical chemistry and Substrate. His Silicon research is multidisciplinary, incorporating perspectives in Secondary ion mass spectrometry, Impurity and Chemical vapor deposition.
Francoise K. LeGoues mainly investigates Condensed matter physics, Dislocation, Crystallography, Epitaxy and Nucleation. The study incorporates disciplines such as Thin film and Silicon in addition to Condensed matter physics. In his research on the topic of Dislocation, Strain is strongly related with Transmission electron microscopy.
The various areas that he examines in his Crystallography study include Electron mobility, Stress relaxation, Chemical vapor deposition and Germanium. His Epitaxy research incorporates elements of Optoelectronics and Optics. Francoise K. LeGoues has included themes like Chemical physics, Monolayer, Activation energy and Diffraction in his Nucleation study.
His primary scientific interests are in Condensed matter physics, Epitaxy, Transmission electron microscopy, Crystallography and Dislocation. His work deals with themes such as Lattice constant and Single crystal substrate, which intersect with Condensed matter physics. His Transmission electron microscopy study combines topics from a wide range of disciplines, such as Stress relaxation and Strain.
Francoise K. LeGoues usually deals with Dislocation and limits it to topics linked to Substrate and Nucleation. His Nucleation research is multidisciplinary, relying on both Monolayer and Core. His research in Relaxation intersects with topics in Surface roughening and Tilt.
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Orientation dependence of grain-boundary critical currents in YBa2Cu3O7- delta bicrystals
D. Dimos;P. Chaudhari;J. Mannhart;F. K. LeGoues.
Physical Review Letters (1988)
Competing relaxation mechanisms in strained layers.
J. Tersoff;F. K. LeGoues.
Physical Review Letters (1994)
Cooperative growth phenomena in silicon/germanium low-temperature epitaxy
Bernard S. Meyerson;Kevin J. Uram;Francoise K. LeGoues.
Applied Physics Letters (1988)
Anomalous strain relaxation in SiGe thin films and superlattices.
F. K. LeGoues;B. S. Meyerson;J. F. Morar.
Physical Review Letters (1991)
High-temperature SiO2 decomposition at the SiO2/Si interface.
R. Tromp;G. W. Rubloff;P. Balk;F. K. LeGoues.
Physical Review Letters (1985)
Growth and strain compensation effects in the ternary Si1-x-yGexCy alloy system
K. Eberl;S. S. Iyer;S. Zollner;J. C. Tsang.
Applied Physics Letters (1992)
Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices
F. K. LeGoues;B. S. Meyerson;J. F. Morar;P. D. Kirchner.
Journal of Applied Physics (1992)
Defect self-annihilation in surfactant-mediated epitaxial growth.
M. Horn-Von Hoegen;F. K. Legoues;M. Copel;M. C. Reuter.
Physical Review Letters (1991)
A liquid solution synthesis of single crystal germanium quantum wires
James R. Heath;Francoise K. LeGoues.
Chemical Physics Letters (1993)
Chemical bonding and reaction at metal/polymer interfaces
Paul S Ho;P. O. Hahn;J. W. Bartha;G. W. Rubloff.
Journal of Vacuum Science and Technology (1985)
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