D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 55 Citations 13,126 120 World Ranking 5578 National Ranking 1566

Research.com Recognitions

Awards & Achievements

1998 - Fellow of American Physical Society (APS) Citation For insightful contributions and creative use of electron microscopy in determining mechanisms of strain relaxation in heteroepitaxial growth of semiconductor thin films

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Organic chemistry
  • Oxygen

The scientist’s investigation covers issues in Condensed matter physics, Thin film, Dislocation, Epitaxy and Transmission electron microscopy. When carried out as part of a general Condensed matter physics research project, his work on Superlattice is frequently linked to work in Inverse, therefore connecting diverse disciplines of study. The Thin film study combines topics in areas such as Crystal growth, Mineralogy, Optics and Analytical chemistry.

His Dislocation study frequently links to other fields, such as Substrate. His studies deal with areas such as Relaxation, Chemical vapor deposition and Nucleation as well as Epitaxy. His Transmission electron microscopy research includes themes of Crystallography and Strain.

His most cited work include:

  • Orientation dependence of grain-boundary critical currents in YBa2Cu3O7- delta bicrystals (1227 citations)
  • Competing relaxation mechanisms in strained layers. (613 citations)
  • Cooperative growth phenomena in silicon/germanium low-temperature epitaxy (342 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Condensed matter physics, Epitaxy, Thin film, Transmission electron microscopy and Silicon. His work carried out in the field of Condensed matter physics brings together such families of science as Crystallography and Nucleation. His Epitaxy study combines topics in areas such as Silicide, Solid solution, Optoelectronics, Germanium and Microstructure.

Francoise K. LeGoues combines subjects such as Crystal growth, Optics, Inorganic compound, Mineralogy and Alloy with his study of Thin film. His Transmission electron microscopy study incorporates themes from Scattering, Molecular beam epitaxy, Metastability, Analytical chemistry and Substrate. His Silicon research is multidisciplinary, incorporating perspectives in Secondary ion mass spectrometry, Impurity and Chemical vapor deposition.

He most often published in these fields:

  • Condensed matter physics (33.93%)
  • Epitaxy (31.25%)
  • Thin film (26.79%)

What were the highlights of his more recent work (between 1992-1998)?

  • Condensed matter physics (33.93%)
  • Dislocation (17.86%)
  • Crystallography (20.54%)

In recent papers he was focusing on the following fields of study:

Francoise K. LeGoues mainly investigates Condensed matter physics, Dislocation, Crystallography, Epitaxy and Nucleation. The study incorporates disciplines such as Thin film and Silicon in addition to Condensed matter physics. In his research on the topic of Dislocation, Strain is strongly related with Transmission electron microscopy.

The various areas that he examines in his Crystallography study include Electron mobility, Stress relaxation, Chemical vapor deposition and Germanium. His Epitaxy research incorporates elements of Optoelectronics and Optics. Francoise K. LeGoues has included themes like Chemical physics, Monolayer, Activation energy and Diffraction in his Nucleation study.

Between 1992 and 1998, his most popular works were:

  • Competing relaxation mechanisms in strained layers. (613 citations)
  • New approach to the growth of low dislocation relaxed SiGe material (188 citations)
  • Cyclic growth of strain-relaxed islands. (185 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Organic chemistry
  • Oxygen

His primary scientific interests are in Condensed matter physics, Epitaxy, Transmission electron microscopy, Crystallography and Dislocation. His work deals with themes such as Lattice constant and Single crystal substrate, which intersect with Condensed matter physics. His Transmission electron microscopy study combines topics from a wide range of disciplines, such as Stress relaxation and Strain.

Francoise K. LeGoues usually deals with Dislocation and limits it to topics linked to Substrate and Nucleation. His Nucleation research is multidisciplinary, relying on both Monolayer and Core. His research in Relaxation intersects with topics in Surface roughening and Tilt.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Orientation dependence of grain-boundary critical currents in YBa2Cu3O7- delta bicrystals

D. Dimos;P. Chaudhari;J. Mannhart;F. K. LeGoues.
Physical Review Letters (1988)

1974 Citations

Competing relaxation mechanisms in strained layers.

J. Tersoff;F. K. LeGoues.
Physical Review Letters (1994)

1057 Citations

Cooperative growth phenomena in silicon/germanium low-temperature epitaxy

Bernard S. Meyerson;Kevin J. Uram;Francoise K. LeGoues.
Applied Physics Letters (1988)

513 Citations

Anomalous strain relaxation in SiGe thin films and superlattices.

F. K. LeGoues;B. S. Meyerson;J. F. Morar.
Physical Review Letters (1991)

484 Citations

High-temperature SiO2 decomposition at the SiO2/Si interface.

R. Tromp;G. W. Rubloff;P. Balk;F. K. LeGoues.
Physical Review Letters (1985)

455 Citations

Growth and strain compensation effects in the ternary Si1-x-yGexCy alloy system

K. Eberl;S. S. Iyer;S. Zollner;J. C. Tsang.
Applied Physics Letters (1992)

389 Citations

Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices

F. K. LeGoues;B. S. Meyerson;J. F. Morar;P. D. Kirchner.
Journal of Applied Physics (1992)

381 Citations

Defect self-annihilation in surfactant-mediated epitaxial growth.

M. Horn-Von Hoegen;F. K. Legoues;M. Copel;M. C. Reuter.
Physical Review Letters (1991)

318 Citations

A liquid solution synthesis of single crystal germanium quantum wires

James R. Heath;Francoise K. LeGoues.
Chemical Physics Letters (1993)

313 Citations

Chemical bonding and reaction at metal/polymer interfaces

Paul S Ho;P. O. Hahn;J. W. Bartha;G. W. Rubloff.
Journal of Vacuum Science and Technology (1985)

293 Citations

If you think any of the details on this page are incorrect, let us know.

Contact us

Best Scientists Citing Francoise K. LeGoues

Eugene A. Fitzgerald

Eugene A. Fitzgerald

MIT

Publications: 54

Amit Goyal

Amit Goyal

University at Buffalo, State University of New York

Publications: 45

Frances M. Ross

Frances M. Ross

MIT

Publications: 34

Matthew T. Currie

Matthew T. Currie

Morgan, Lewis & Bockius LLP

Publications: 32

anthony j lochtefeld

anthony j lochtefeld

Taiwan Semiconductor Manufacturing Company (United States)

Publications: 31

David K. Christen

David K. Christen

Oak Ridge National Laboratory

Publications: 30

H. von Känel

H. von Känel

ETH Zurich

Publications: 29

Sanjay K. Banerjee

Sanjay K. Banerjee

The University of Texas at Austin

Publications: 28

Friedrich Schäffler

Friedrich Schäffler

Johannes Kepler University of Linz

Publications: 27

Mariappan Parans Paranthaman

Mariappan Parans Paranthaman

Oak Ridge National Laboratory

Publications: 27

Jochen Mannhart

Jochen Mannhart

Max Planck Society

Publications: 25

Yasuhiro Shiraki

Yasuhiro Shiraki

University of Tokyo

Publications: 24

H.J. Osten

H.J. Osten

University of Hannover

Publications: 23

Eliot D. Specht

Eliot D. Specht

Oak Ridge National Laboratory

Publications: 23

Max G. Lagally

Max G. Lagally

University of Wisconsin–Madison

Publications: 23

James C. Sturm

James C. Sturm

Princeton University

Publications: 22

Trending Scientists

Rémi Gribonval

Rémi Gribonval

École Normale Supérieure de Lyon

Nor Ashidi Mat Isa

Nor Ashidi Mat Isa

Universiti Sains Malaysia

Jinyu Wen

Jinyu Wen

Huazhong University of Science and Technology

Barbara M. Terhal

Barbara M. Terhal

Delft University of Technology

Douglas C. Montgomery

Douglas C. Montgomery

Arizona State University

Ime B. Obot

Ime B. Obot

King Fahd University of Petroleum and Minerals

Maria Rita Passos-Bueno

Maria Rita Passos-Bueno

Universidade de São Paulo

Heinz-Ulrich Reyer

Heinz-Ulrich Reyer

University of Zurich

Michael M. Douglas

Michael M. Douglas

University of Western Australia

Anya M. Waite

Anya M. Waite

Dalhousie University

Claudio Tripodo

Claudio Tripodo

University of Palermo

Reshma Jagsi

Reshma Jagsi

University of Michigan–Ann Arbor

David G. Huntsman

David G. Huntsman

University of British Columbia

Harry R. Büller

Harry R. Büller

University of Amsterdam

Jean-Pascal Gond

Jean-Pascal Gond

City, University of London

Michael A. Peters

Michael A. Peters

Beijing Normal University

Something went wrong. Please try again later.