2026 Francoise K. LeGoues: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	National Ranking	Publications	Citations
Materials Science	64	5887	1515	157	14838

Discipline name

D-Index

World Ranking

National Ranking

Publications

Citations

Materials Science

5887

1515

157

14838

Research.com Recognitions

1998 - Fellow of American Physical Society (APS) Citation For insightful contributions and creative use of electron microscopy in determining mechanisms of strain relaxation in heteroepitaxial growth of semiconductor thin films

Overview

Francoise K. LeGoues is affiliated with IBM in the United States, contributing to research within this institution. Their work has been recognized with the Fellow of the American Physical Society (APS) award in 1998. The award citation highlights contributions to electron microscopy techniques used to understand mechanisms of strain relaxation in heteroepitaxial growth of semiconductor thin films.

LeGoues's scientific activities predominantly involve the application of microscopy methods to materials science problems, specifically in semiconductor thin films. This indicates a specialization in characterizing and analyzing the physical properties and growth processes at the microscale level in heteroepitaxial systems.

No published papers, frequent co-authors, publication venues, or book publications are listed for LeGoues, which limits detailed insight into the breadth of their publication record or collaboration network.

Their recognized work contributes to the fields of physics and materials science as evidenced by APS fellowship, which typically honors researchers in physical sciences. The specific focus on heteroepitaxial growth and strain relaxation processes suggests expertise in condensed matter physics and semiconductor technology.

Best Publications

Orientation dependence of grain-boundary critical currents in YBa2Cu3O7- delta bicrystals

D. Dimos;P. Chaudhari;J. Mannhart;F. K. LeGoues

2016
Citations
Competing relaxation mechanisms in strained layers.

J. Tersoff;F. K. LeGoues

1081
Citations
Cooperative growth phenomena in silicon/germanium low-temperature epitaxy

Bernard S. Meyerson;Kevin J. Uram;Francoise K. LeGoues

515
Citations
Anomalous strain relaxation in SiGe thin films and superlattices.

F. K. LeGoues;B. S. Meyerson;J. F. Morar

485
Citations
High-temperature SiO2 decomposition at the SiO2/Si interface.

R. Tromp;G. W. Rubloff;P. Balk;F. K. LeGoues

465
Citations
Oxidation studies of SiGe

F. K. LeGoues;R. Rosenberg;T. Nguyen;F. Himpsel

453
Citations
Growth and strain compensation effects in the ternary Si1-x-yGexCy alloy system

K. Eberl;S. S. Iyer;S. Zollner;J. C. Tsang

392
Citations
Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices

F. K. LeGoues;B. S. Meyerson;J. F. Morar;P. D. Kirchner

384
Citations
Defect self-annihilation in surfactant-mediated epitaxial growth.

M. Horn-Von Hoegen;F. K. Legoues;M. Copel;M. C. Reuter

322
Citations
A liquid solution synthesis of single crystal germanium quantum wires

James R. Heath;Francoise K. LeGoues

318
Citations
Chemical bonding and reaction at metal/polymer interfaces

Paul S Ho;P. O. Hahn;J. W. Bartha;G. W. Rubloff

298
Citations
Cyclic growth of strain-relaxed islands.

F. K. LeGoues;M. C. Reuter;J. Tersoff;M. Hammar

294
Citations
Microstructure and strain relief of Ge films grown layer by layer on Si(001).

F. K. LeGoues;M. Copel;R. M. Tromp

279
Citations
New approach to the growth of low dislocation relaxed SiGe material

A. R. Powell;S. S. Iyer;F. K. LeGoues

279
Citations
Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation

F. K. LeGoues;R. Rosenberg;B. S. Meyerson

253
Citations
Influence of misfit dislocations on the surface morphology of Si1−xGex films

M. A. Lutz;R. M. Feenstra;F. K. LeGoues;P. M. Mooney

246
Citations
Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films

B. S. Meyerson;F. K. LeGoues;T. N. Nguyen;D. L. Harame

223
Citations
In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I. {Si(001) }/{Ge}

M. Hammar;F.K. LeGoues;J. Tersoff;M.C. Reuter

207
Citations
Surface-stress-induced order in SiGe alloy films.

F. K. LeGoues;V. P. Kesan;S. S. Iyer;J. Tersoff

191
Citations
Low defect density/arbitrary lattice constant heteroepitaxial layers

Francoise Kolmer Legoues;Bernard Steele Meyerson

189
Citations