Francoise K. LeGoues

Francoise K. LeGoues publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Francoise K. LeGoues sits on this spectrum.

Francoise K. LeGoues D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Francoise K. LeGoues sits on this spectrum.

Research.com Recognitions

• 1998 - Fellow of American Physical Society (APS) Citation For insightful contributions and creative use of electron microscopy in determining mechanisms of strain relaxation in heteroepitaxial growth of semiconductor thin films

Overview

Best Publications

• Orientation dependence of grain-boundary critical currents in YBa2Cu3O7- delta bicrystals

  D. Dimos;P. Chaudhari;J. Mannhart;F. K. LeGoues

  2016
  Citations

• Competing relaxation mechanisms in strained layers.

  J. Tersoff;F. K. LeGoues

  1081
  Citations

• Cooperative growth phenomena in silicon/germanium low-temperature epitaxy

  Bernard S. Meyerson;Kevin J. Uram;Francoise K. LeGoues

  515
  Citations

• Anomalous strain relaxation in SiGe thin films and superlattices.

  F. K. LeGoues;B. S. Meyerson;J. F. Morar

  485
  Citations

• High-temperature SiO2 decomposition at the SiO2/Si interface.

  R. Tromp;G. W. Rubloff;P. Balk;F. K. LeGoues

  465
  Citations

• Oxidation studies of SiGe

  F. K. LeGoues;R. Rosenberg;T. Nguyen;F. Himpsel

  453
  Citations

• Growth and strain compensation effects in the ternary Si1-x-yGexCy alloy system

  K. Eberl;S. S. Iyer;S. Zollner;J. C. Tsang

  392
  Citations

• Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices

  F. K. LeGoues;B. S. Meyerson;J. F. Morar;P. D. Kirchner

  384
  Citations

• Defect self-annihilation in surfactant-mediated epitaxial growth.

  M. Horn-Von Hoegen;F. K. Legoues;M. Copel;M. C. Reuter

  322
  Citations

• A liquid solution synthesis of single crystal germanium quantum wires

  James R. Heath;Francoise K. LeGoues

  318
  Citations

• Chemical bonding and reaction at metal/polymer interfaces

  Paul S Ho;P. O. Hahn;J. W. Bartha;G. W. Rubloff

  298
  Citations

• Cyclic growth of strain-relaxed islands.

  F. K. LeGoues;M. C. Reuter;J. Tersoff;M. Hammar

  294
  Citations

• Microstructure and strain relief of Ge films grown layer by layer on Si(001).

  F. K. LeGoues;M. Copel;R. M. Tromp

  279
  Citations

• New approach to the growth of low dislocation relaxed SiGe material

  A. R. Powell;S. S. Iyer;F. K. LeGoues

  279
  Citations

• Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation

  F. K. LeGoues;R. Rosenberg;B. S. Meyerson

  253
  Citations

• Influence of misfit dislocations on the surface morphology of Si1−xGex films

  M. A. Lutz;R. M. Feenstra;F. K. LeGoues;P. M. Mooney

  246
  Citations

• Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films

  B. S. Meyerson;F. K. LeGoues;T. N. Nguyen;D. L. Harame

  223
  Citations

• In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I. {Si(001) }/{Ge}

  M. Hammar;F.K. LeGoues;J. Tersoff;M.C. Reuter

  207
  Citations

• Surface-stress-induced order in SiGe alloy films.

  F. K. LeGoues;V. P. Kesan;S. S. Iyer;J. Tersoff

  191
  Citations

• Low defect density/arbitrary lattice constant heteroepitaxial layers

  Francoise Kolmer Legoues;Bernard Steele Meyerson

  189
  Citations