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Paul S. Ho

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 77 3141 3033 877 823 580 20558

Paul S. Ho publications per year

The chart shows the history of publications by Paul S. Ho between 1966 and 2022, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Paul S. Ho published across 57 years, from 1966 to 2022, averaging 10.8 papers a year. Output peaked at 30 publications in 2006. 13 of the 616 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1966 to 2022. Vertical axis: number of publications, 0 to 30. Peak 30 publications in 2006. 1966: 2 publications 1967: 2 publications 1968: 3 publications 1969: 2 publications 1970: 2 publications 1971: 2 publications 1972: 7 publications 1973: 11 publications 1974: 3 publications 1975: 5 publications 1976: 5 publications 1977: 3 publications 1978: 8 publications 1979: 6 publications 1980: 8 publications 1981: 9 publications 1982: 17 publications 1983: 11 publications 1984: 12 publications 1985: 17 publications 1986: 18 publications 1987: 8 publications 1988: 10 publications 1989: 7 publications 1990: 9 publications 1991: 6 publications 1992: 8 publications 1993: 12 publications 1994: 9 publications 1995: 5 publications 1996: 6 publications 1997: 13 publications 1998: 18 publications 1999: 19 publications 2000: 14 publications 2001: 13 publications 2002: 17 publications 2003: 17 publications 2004: 23 publications 2005: 22 publications 2006: 30 publications 2007: 22 publications 2008: 29 publications 2009: 24 publications 2010: 23 publications 2011: 13 publications 2012: 20 publications 2013: 12 publications 2014: 14 publications 2015: 7 publications 2016: 10 publications 2017: 3 publications 2018: 2 publications 2019: 3 publications 2020: 2 publications 2021: 3 publications 2022: 10 publications
1966 2022

616 publications in total across all disciplines

View publications per year as a table
Paul S. Ho: publications per year, 1966 to 2022
Year Publications
1966 2
1967 2
1968 3
1969 2
1970 2
1971 2
1972 7
1973 11
1974 3
1975 5
1976 5
1977 3
1978 8
1979 6
1980 8
1981 9
1982 17
1983 11
1984 12
1985 17
1986 18
1987 8
1988 10
1989 7
1990 9
1991 6
1992 8
1993 12
1994 9
1995 5
1996 6
1997 13
1998 18
1999 19
2000 14
2001 13
2002 17
2003 17
2004 23
2005 22
2006 30
2007 22
2008 29
2009 24
2010 23
2011 13
2012 20
2013 12
2014 14
2015 7
2016 10
2017 3
2018 2
2019 3
2020 2
2021 3
2022 10
Total 616
Download as CSV

Paul S. Ho publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Paul S. Ho sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 570–589 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 580 publications — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111 580
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
Download as CSV

Paul S. Ho D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Paul S. Ho sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 76–77 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 77 D-Index — 76th percentile

76% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323 77
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
Download as CSV

Research.com Recognitions

  • 2007 - Semiconductor Industry Association University Researcher Award

Overview

Paul S. Ho is affiliated with The University of Texas at Austin in the United States. Their research focuses on multiple aspects of engineering and materials science, particularly in the areas of electronic packaging, semiconductor materials, and reliability of copper interconnects.

The main fields of study for Paul S. Ho include:

  • Engineering
  • Materials Science
  • Physics and Astronomy

Subfields of study further specify their expertise as:

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Statistics, Probability and Uncertainty
  • Mechanical Engineering

Key topics covered by Paul S. Ho's research are:

  • Electronic Packaging and Soldering Technologies
  • Copper Interconnects and Reliability
  • Semiconductor materials and devices
  • Molecular Junctions and Nanostructures
  • Probabilistic and Robust Engineering Design
  • Non-Destructive Testing Techniques
  • 3D IC and TSV technologies

The scientist has contributed papers such as:

  • "An Adaptive Machine Learning Method Based on Finite Element Analysis for Ultra Low-k Chip Package Design," 2021, IEEE Transactions on Components Packaging and Manufacturing Technology
  • "Effect of Wiring Density and Pillar Structure on Chip Packaging Interaction for Mixed-Signal Cu Low k Chips," 2021, IEEE Transactions on Device and Materials Reliability
  • "Index," 2022, Cambridge University Press eBooks

Paul S. Ho has also authored book publications including:

  • "Electromigration in Metals," published by Cambridge University Press in 2022

Frequent co-authors collaborating with Paul S. Ho include:

  • Chao-Kun Hu
  • Martin Gall
  • Valeriy Sukharev
  • Weishen Chu
  • Wei Li

The scientist's work has been published predominantly in the following venues:

  • IEEE Transactions on Components Packaging and Manufacturing Technology
  • IEEE Transactions on Device and Materials Reliability
  • Cambridge University Press eBooks

In 2007, Paul S. Ho received the Semiconductor Industry Association University Researcher Award.

Best Publications

  • Electromigration in metals

    Paul S Ho;Thomas Kwok

  • Low Dielectric Constant Materials for ULSI Interconnects

    Michael Morgen;E. Todd Ryan;Jie-Hua Zhao;Chuan Hu

  • Electromigration reliability issues in dual-damascene Cu interconnections

    E.T. Ogawa;Ki-Don Lee;V.A. Blaschke;P.S. Ho

  • Plasma processing of low-k dielectrics

    Mikhail R. Baklanov;Jean-Francois de Marneffe;Denis Shamiryan;Adam M. Urbanowicz

  • Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications

    Wei William Lee;Paul S. Ho

  • Diffusion Phenomena in Thin Films and Microelectronic Materials

    Davendra Gupta;Paul S. Ho

  • Chemical bonding and reaction at metal/polymer interfaces

    Paul S Ho;P. O. Hahn;J. W. Bartha;G. W. Rubloff

  • Impact of Near-Surface Thermal Stresses on Interfacial Reliability of Through-Silicon Vias for 3-D Interconnects

    Suk-Kyu Ryu;Kuan-Hsun Lu;Xuefeng Zhang;Jang-Hi Im

  • Investigation of diffusion and electromigration parameters for Cu–Sn intermetallic compounds in Pb-free solders using simulated annealing

    Brook Chao;Seung Hyun Chae;Xuefeng Zhang;Kuan Hsun Lu

  • Auger study of preferred sputtering on binary alloy surfaces

    P.S Ho;J.E Lewis;H.S Wildman;J.K Howard

  • Thermo-mechanical reliability of 3-D ICs containing through silicon vias

    Kuan H. Lu;Xuefeng Zhang;Suk-Kyu Ryu;Jay Im

  • Electromigration in Al(Cu) two-level structures: Effect of Cu and kinetics of damage formation

    C.‐K. Hu;M. B. Small;P. S. Ho

  • Complex formation and growth at the Cr– and Cu–polyimide interface

    R. Haight;R. C. White;B. D. Silverman;Paul S Ho

  • Equilibrium structures of Si(100) stepped surfaces.

    Tze Wing Poon;Sidney Yip;Paul S. Ho;Farid F. Abraham

  • Motion of Inclusion Induced by a Direct Current and a Temperature Gradient

    Paul S. Ho

  • Effects of enhanced diffusion on preferred sputtering of homogeneous alloy surfaces

    Paul S Ho

  • Stress-induced phenomena in metallization

    P.S. Ho;C.Y. Li;P. Totta

  • Measurement of elastic modulus, Poisson ratio, and coefficient of thermal expansion of on-wafer submicron films

    Jie Hua Zhao;Todd Ryan;Paul S. Ho;Andrew J. McKerrow

  • Intermetallic compounds of Al and transitions metals: Effect of electromigration in 1-2-μm-wide lines

    J. K. Howard;J. F. White;P. S. Ho

  • Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111)

    M. Liehr;P. E. Schmid;F. K. LeGoues;Paul S Ho

  • Cross-sectional transmission electron microscopy of silicon-silicide interfaces

    F. Föll;P. S. Ho;King-Ning Tu

Frequent Co-Authors

Rui Huang
Rui Huang The University of Texas at Austin
Gary W. Rubloff
Gary W. Rubloff University of Maryland, College Park
Sidney Yip
Sidney Yip MIT
Ehrenfried Zschech
Ehrenfried Zschech Fraunhofer Society
Francoise K. LeGoues
Francoise K. LeGoues IBM (United States)
Chenming Hu
Chenming Hu University of California, Berkeley
Li Shi
Li Shi The University of Texas at Austin
Nobumichi Tamura
Nobumichi Tamura Lawrence Berkeley National Laboratory
King-Ning Tu
King-Ning Tu City University of Hong Kong
Franz Faupel
Franz Faupel Kiel University

External Links

Personal website of Paul S. Ho Google Scholar page

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Best Scientists Citing Paul S. Ho

King-Ning Tu

King-Ning Tu

City University of Hong Kong

Publications: 89

Mikhail R. Baklanov

Mikhail R. Baklanov

North China University of Technology

Publications: 67

Eduard Arzt

Eduard Arzt

University of California, San Diego

Publications: 40

Ehrenfried Zschech

Ehrenfried Zschech

Fraunhofer Society

Publications: 36

Chih Chen

Chih Chen

National Yang Ming Chiao Tung University

Publications: 35

Zhigang Suo

Zhigang Suo

Harvard University

Publications: 33

Guoqi Zhang

Guoqi Zhang

Delft University of Technology

Publications: 31

Carl V. Thompson

Carl V. Thompson

MIT

Publications: 31

Young-Chang Joo

Young-Chang Joo

Seoul National University

Publications: 28

Toh-Ming Lu

Toh-Ming Lu

Rensselaer Polytechnic Institute

Publications: 27

Nobumichi Tamura

Nobumichi Tamura

Lawrence Berkeley National Laboratory

Publications: 26

Subodh G. Mhaisalkar

Subodh G. Mhaisalkar

Nanyang Technological University

Publications: 25

Siegfried Selberherr

Siegfried Selberherr

TU Wien

Publications: 24

Sung Kyu Lim

Sung Kyu Lim

Georgia Institute of Technology

Publications: 24

Eric Beyne

Eric Beyne

Imec

Publications: 24

Franz Faupel

Franz Faupel

Kiel University

Publications: 23

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