2026 Paul S. Ho: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	77	3143	3036	879	826	580	20558

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

3143

3036

879

826

580

20558

Research.com Recognitions

2007 - Semiconductor Industry Association University Researcher Award

Overview

Paul S. Ho is affiliated with The University of Texas at Austin in the United States. Their research focuses on multiple aspects of engineering and materials science, particularly in the areas of electronic packaging, semiconductor materials, and reliability of copper interconnects.

The main fields of study for Paul S. Ho include:

Engineering
Materials Science
Physics and Astronomy

Subfields of study further specify their expertise as:

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Statistics, Probability and Uncertainty
Mechanical Engineering

Key topics covered by Paul S. Ho's research are:

Electronic Packaging and Soldering Technologies
Copper Interconnects and Reliability
Semiconductor materials and devices
Molecular Junctions and Nanostructures
Probabilistic and Robust Engineering Design
Non-Destructive Testing Techniques
3D IC and TSV technologies

The scientist has contributed papers such as:

"An Adaptive Machine Learning Method Based on Finite Element Analysis for Ultra Low-k Chip Package Design," 2021, IEEE Transactions on Components Packaging and Manufacturing Technology
"Effect of Wiring Density and Pillar Structure on Chip Packaging Interaction for Mixed-Signal Cu Low k Chips," 2021, IEEE Transactions on Device and Materials Reliability
"Index," 2022, Cambridge University Press eBooks

Paul S. Ho has also authored book publications including:

"Electromigration in Metals," published by Cambridge University Press in 2022

Frequent co-authors collaborating with Paul S. Ho include:

Chao-Kun Hu
Martin Gall
Valeriy Sukharev
Weishen Chu
Wei Li

The scientist's work has been published predominantly in the following venues:

IEEE Transactions on Components Packaging and Manufacturing Technology
IEEE Transactions on Device and Materials Reliability
Cambridge University Press eBooks

In 2007, Paul S. Ho received the Semiconductor Industry Association University Researcher Award.

Best Publications

Electromigration in metals

Paul S Ho;Thomas Kwok

1050
Citations
Low Dielectric Constant Materials for ULSI Interconnects

Michael Morgen;E. Todd Ryan;Jie-Hua Zhao;Chuan Hu

531
Citations
Electromigration reliability issues in dual-damascene Cu interconnections

E.T. Ogawa;Ki-Don Lee;V.A. Blaschke;P.S. Ho

364
Citations
Plasma processing of low-k dielectrics

Mikhail R. Baklanov;Jean-Francois de Marneffe;Denis Shamiryan;Adam M. Urbanowicz

358
Citations
Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications

Wei William Lee;Paul S. Ho

342
Citations
Diffusion Phenomena in Thin Films and Microelectronic Materials

Davendra Gupta;Paul S. Ho

332
Citations
Chemical bonding and reaction at metal/polymer interfaces

Paul S Ho;P. O. Hahn;J. W. Bartha;G. W. Rubloff

298
Citations
Impact of Near-Surface Thermal Stresses on Interfacial Reliability of Through-Silicon Vias for 3-D Interconnects

Suk-Kyu Ryu;Kuan-Hsun Lu;Xuefeng Zhang;Jang-Hi Im

289
Citations
Investigation of diffusion and electromigration parameters for Cu–Sn intermetallic compounds in Pb-free solders using simulated annealing

Brook Chao;Seung Hyun Chae;Xuefeng Zhang;Kuan Hsun Lu

273
Citations
Auger study of preferred sputtering on binary alloy surfaces

P.S Ho;J.E Lewis;H.S Wildman;J.K Howard

268
Citations
Thermo-mechanical reliability of 3-D ICs containing through silicon vias

Kuan H. Lu;Xuefeng Zhang;Suk-Kyu Ryu;Jay Im

261
Citations
Electromigration in Al(Cu) two-level structures: Effect of Cu and kinetics of damage formation

C.‐K. Hu;M. B. Small;P. S. Ho

250
Citations
Complex formation and growth at the Cr– and Cu–polyimide interface

R. Haight;R. C. White;B. D. Silverman;Paul S Ho

239
Citations
Equilibrium structures of Si(100) stepped surfaces.

Tze Wing Poon;Sidney Yip;Paul S. Ho;Farid F. Abraham

231
Citations
Motion of Inclusion Induced by a Direct Current and a Temperature Gradient

Paul S. Ho

204
Citations
Effects of enhanced diffusion on preferred sputtering of homogeneous alloy surfaces

Paul S Ho

195
Citations
Stress-induced phenomena in metallization

P.S. Ho;C.Y. Li;P. Totta

194
Citations
Measurement of elastic modulus, Poisson ratio, and coefficient of thermal expansion of on-wafer submicron films

Jie Hua Zhao;Todd Ryan;Paul S. Ho;Andrew J. McKerrow

191
Citations
Intermetallic compounds of Al and transitions metals: Effect of electromigration in 1-2-μm-wide lines

J. K. Howard;J. F. White;P. S. Ho

190
Citations
Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111)

M. Liehr;P. E. Schmid;F. K. LeGoues;Paul S Ho

184
Citations
Cross-sectional transmission electron microscopy of silicon-silicide interfaces

F. Föll;P. S. Ho;King-Ning Tu

181
Citations