D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 71 Citations 16,833 418 World Ranking 1703 National Ranking 573

Research.com Recognitions

Awards & Achievements

2007 - Semiconductor Industry Association University Researcher Award

Overview

What is he best known for?

The fields of study he is best known for:

  • Composite material
  • Semiconductor
  • Organic chemistry

His scientific interests lie mostly in Composite material, Electromigration, Analytical chemistry, Silicon and Dielectric. His studies deal with areas such as Structural engineering and Temperature cycling as well as Composite material. His Electromigration research includes elements of Grain boundary, Intermetallic, Thin film, Metallurgy and Reliability.

His research integrates issues of Sputtering, Layer, Polyimide, Copper and Ion in his study of Analytical chemistry. His Silicon research integrates issues from Condensed matter physics, Finite element method and Plasticity. His Dielectric research is multidisciplinary, incorporating elements of Porosity, Porous medium and Thermal conductivity.

His most cited work include:

  • Electromigration in metals (614 citations)
  • Low Dielectric Constant Materials for ULSI Interconnects (323 citations)
  • Electromigration reliability issues in dual-damascene Cu interconnections (220 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Composite material, Electromigration, Dielectric, Analytical chemistry and Silicon. His Composite material study incorporates themes from Thin film, Electronic engineering, Finite element method and Reliability. His studies examine the connections between Electromigration and genetics, as well as such issues in Soldering, with regards to Flip chip.

His work in Dielectric addresses issues such as Oxide, which are connected to fields such as Activation energy. His research on Analytical chemistry also deals with topics like

  • Annealing and related Microstructure,
  • Grain boundary which connect with Condensed matter physics. Paul S. Ho has included themes like Substrate and Schottky barrier in his Silicon study.

He most often published in these fields:

  • Composite material (36.81%)
  • Electromigration (23.62%)
  • Dielectric (19.29%)

What were the highlights of his more recent work (between 2006-2021)?

  • Composite material (36.81%)
  • Electromigration (23.62%)
  • Silicon (14.37%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Composite material, Electromigration, Silicon, Dielectric and Stress. His Composite material research incorporates themes from Structural engineering, Finite element method, Electronic engineering and Reliability. The study incorporates disciplines such as Microstructure, Grain boundary, Intermetallic, Soldering and Void in addition to Electromigration.

Paul S. Ho interconnects Thermal, Buckling, Critical load, Integrated circuit and Substrate in the investigation of issues within Silicon. His Dielectric study combines topics from a wide range of disciplines, such as Analytical chemistry, Chemical engineering and X-ray photoelectron spectroscopy. His research in Stress intersects with topics in Through-silicon via, Material properties, Raman spectroscopy and Microelectronics.

Between 2006 and 2021, his most popular works were:

  • Plasma processing of low-k dielectrics (208 citations)
  • Impact of Near-Surface Thermal Stresses on Interfacial Reliability of Through-Silicon Vias for 3-D Interconnects (202 citations)
  • Thermo-mechanical reliability of 3-D ICs containing through silicon vias (174 citations)

In his most recent research, the most cited papers focused on:

  • Composite material
  • Semiconductor
  • Organic chemistry

Paul S. Ho mainly focuses on Composite material, Stress, Finite element method, Silicon and Structural engineering. His study connects Temperature cycling and Composite material. Paul S. Ho has researched Stress in several fields, including Through-silicon via, Material properties, Microelectronics and Reliability.

His research investigates the link between Silicon and topics such as Plasticity that cross with problems in Electron mobility and Deformation. The various areas that Paul S. Ho examines in his Electromigration study include Cathode, Metallurgy and Analytical chemistry. Paul S. Ho usually deals with Analytical chemistry and limits it to topics linked to Inductively coupled plasma and Dielectric.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Electromigration in metals

Paul S Ho;Thomas Kwok.
Reports on Progress in Physics (1989)

881 Citations

Low Dielectric Constant Materials for ULSI Interconnects

Michael Morgen;E. Todd Ryan;Jie-Hua Zhao;Chuan Hu.
Annual Review of Materials Science (2000)

495 Citations

Electromigration reliability issues in dual-damascene Cu interconnections

E.T. Ogawa;Ki-Don Lee;V.A. Blaschke;P.S. Ho.
IEEE Transactions on Reliability (2002)

333 Citations

Diffusion Phenomena in Thin Films and Microelectronic Materials

Devendra Gupta;P. S. Ho.
(1989)

332 Citations

Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications

Wei William Lee;Paul S. Ho.
Mrs Bulletin (1997)

327 Citations

Plasma processing of low-k dielectrics

Mikhail R. Baklanov;Jean-Francois de Marneffe;Denis Shamiryan;Adam M. Urbanowicz.
Journal of Applied Physics (2013)

292 Citations

Chemical bonding and reaction at metal/polymer interfaces

Paul S Ho;P. O. Hahn;J. W. Bartha;G. W. Rubloff.
Journal of Vacuum Science and Technology (1985)

287 Citations

Auger study of preferred sputtering on binary alloy surfaces

P.S Ho;J.E Lewis;H.S Wildman;J.K Howard.
Surface Science (1976)

258 Citations

Impact of Near-Surface Thermal Stresses on Interfacial Reliability of Through-Silicon Vias for 3-D Interconnects

Suk-Kyu Ryu;Kuan-Hsun Lu;Xuefeng Zhang;Jang-Hi Im.
IEEE Transactions on Device and Materials Reliability (2011)

244 Citations

Thermo-mechanical reliability of 3-D ICs containing through silicon vias

Kuan H. Lu;Xuefeng Zhang;Suk-Kyu Ryu;Jay Im.
electronic components and technology conference (2009)

236 Citations

If you think any of the details on this page are incorrect, let us know.

Contact us

Best Scientists Citing Paul S. Ho

King-Ning Tu

King-Ning Tu

University of California, Los Angeles

Publications: 89

Mikhail R. Baklanov

Mikhail R. Baklanov

North China University of Technology

Publications: 67

Eduard Arzt

Eduard Arzt

Saarland University

Publications: 40

Chih Chen

Chih Chen

National Yang Ming Chiao Tung University

Publications: 35

Zhigang Suo

Zhigang Suo

Harvard University

Publications: 33

Guoqi Zhang

Guoqi Zhang

Georgia State University

Publications: 31

Carl V. Thompson

Carl V. Thompson

MIT

Publications: 31

Toh-Ming Lu

Toh-Ming Lu

Rensselaer Polytechnic Institute

Publications: 27

Nobumichi Tamura

Nobumichi Tamura

Lawrence Berkeley National Laboratory

Publications: 26

Subodh G. Mhaisalkar

Subodh G. Mhaisalkar

Nanyang Technological University

Publications: 25

Sung Kyu Lim

Sung Kyu Lim

Georgia Institute of Technology

Publications: 24

Eric Beyne

Eric Beyne

Interuniversity Microelectronics Centre

Publications: 24

Siegfried Selberherr

Siegfried Selberherr

TU Wien

Publications: 24

Franz Faupel

Franz Faupel

Kiel University

Publications: 23

Chenming Hu

Chenming Hu

University of California, Berkeley

Publications: 19

Raymond T. Tung

Raymond T. Tung

Brooklyn College

Publications: 19

Something went wrong. Please try again later.