World's Best Scientists 2026 revealed!
Eric Beyne

Eric Beyne

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
59
Citations
14816
World Ranking
1726
National Ranking
38

Eric Beyne publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Eric Beyne sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 446 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 727 publications — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Eric Beyne D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Eric Beyne sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 263 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 59 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Eric Beyne is affiliated with Imec in Belgium and has contributed extensively to the field of engineering, with a particular focus on electrical and electronic engineering. Their research encompasses multiple subfields including biomedical engineering, mechanical engineering, atomic and molecular physics and optics, as well as electronic, optical, and magnetic materials.

The core topics of Eric Beyne's research involve advanced integration technologies and semiconductor innovations. These main topics include:

  • 3D IC and TSV technologies
  • Electronic Packaging and Soldering Technologies
  • Semiconductor materials and devices
  • Advanced Surface Polishing Techniques
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advancements in Semiconductor Devices and Circuit Design
  • Electromagnetic Compatibility and Noise Suppression

Eric Beyne has contributed to several scientific publications over recent years, with selected papers reflecting their focus on 3D integration and device technologies:

  • "Buried Power Rails and Nano-Scale TSV: Technology Boosters for Backside Power Delivery Network and 3D Heterogeneous Integration" (2022), published in 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)
  • "3D SoC integration, beyond 2.5D chiplets" (2021), published in 2021 IEEE International Electron Devices Meeting (IEDM)
  • "Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance" (2023), published in ECS Journal of Solid State Science and Technology
  • "Power, Performance, Area and Thermal Analysis of 2D and 3D ICs at A14 Node Designed with Back-side Power Delivery Network" (2022), published in 2022 International Electron Devices Meeting (IEDM)
  • "Entire Domain Basis Function Expansion of the Differential Surface Admittance for Efficient Broadband Characterization of Lossy Interconnects" (2020), published in IEEE Transactions on Microwave Theory and Techniques

Frequent co-authors collaborating with Eric Beyne include:

  • Geert Van der Plas
  • Gerald Beyer
  • Alain Phommahaxay
  • Anne Jourdain
  • Serena Iacovo

Eric Beyne's work has been published often in multiple venues, which serve as key platforms for disseminating research in electronics packaging, device technologies, and integrated circuits. These frequent publication venues include:

  • IEEE Transactions on Components Packaging and Manufacturing Technology
  • 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)
  • ECS Journal of Solid State Science and Technology
  • 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
  • Microelectronic Engineering

Best Publications

  • Design Issues and Considerations for Low-Cost 3-D TSV IC Technology

    G Van der Plas;P Limaye;I Loi;A Mercha

  • MEMS for wireless communications: 'from RF-MEMS components to RF-MEMS-SiP'

    Harrie A C Tilmans;Walter De Raedt;Eric Beyne

  • Method of fabrication of a microstructure having an internal cavity

    Hendrikus A. C. Tilmans;Eric Beyne;Myriam Van de Peer

  • 3D integration by Cu-Cu thermo-compression bonding of extremely thinned bulk-Si die containing 10 μm pitch through-Si vias

    B. Swinnen;W. Ruythooren;P. De Moor;L. Bogaerts

  • Image sensor ball grid array package and the fabrication thereof

    Eric Beyne;Steve Lerner

  • System for fabrication of integrated tunable/switchable passive microwave and millimeter wave modules

    Hendrikus Tilmans;Eric Beyne;Henri Jansen;Walter De Raedt

  • 3D System Integration Technologies

    Eric Beyne

  • Method of transferring ultra-thin substrates and application of the method to the manufacture of a multi-layer thin film device

    Eric Beyne;Augustin Coello-Vera;Olivier Vendier

  • 3-D Technology Assessment: Path-Finding the Technology/Design Sweet-Spot

    P. Marchal;B. Bougard;G. Katti;M. Stucchi

  • 3D stacked IC demonstration using a through Silicon Via First approach

    J. Van Olmen;A. Mercha;G. Katti;C. Huyghebaert

  • The 3-D Interconnect Technology Landscape

    Eric Beyne

  • Thermal cycling reliability of SnAgCu and SnPb solder joints: A comparison for several IC-packages.

    Bart Vandevelde;Mario Gonzalez;Paresh Limaye;Petar Ratchev

  • The rise of the 3rd dimension for system intergration

    E. Beyne

  • Hermal cycling reliability of snagcu and snpb solder joints: a comparison for several ic-packages

    B. Vandevelde;M. Gonzalez;P. Limaye;P. Ratchev

  • Cu pumping in TSVs: Effect of pre-CMP thermal budget

    I. De Wolf;K. Croes;O. Varela Pedreira;R. Labie

  • Bow-tie slot antenna fed by CPW

    E.A Soliman;S Brebels;Peter Delmotte;Guy Vandenbosch

  • Multilayer thin-film MCM-D for the integration of high-performance RF and microwave circuits

    G. Carchon;K. Vaesen;S. Brebels;W. De Raedt

  • Comprehensive analysis of the impact of single and arrays of through silicon vias induced stress on high-k / metal gate CMOS performance

    A. Mercha;G. Van der Plas;V. Moroz;I. De Wolf

  • Method for producing electrical through hole interconnects and devices made thereof

    Eric Beyne;Riet Labie

  • The indent reflow sealing (IRS) technique-a method for the fabrication of sealed cavities for MEMS devices

    H.A.C. Tilmans;D.J. van de Peer;E. Beyne

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